Patents by Inventor Nancy M. Lomeli

Nancy M. Lomeli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200013792
    Abstract: Some embodiments include an assembly having channel material structures extending upwardly from a conductive structure. Anchor structures are laterally offset from the channel material structures and penetrate into the conductive structure to a depth sufficient to provide mechanical stability to at least a portion of the assembly. The conductive structure may include a first conductive material over a second conductive material, and may be a source line of a three-dimensional NAND configuration. Some embodiments include methods of forming assemblies to have channel material structures and anchor structures.
    Type: Application
    Filed: September 20, 2019
    Publication date: January 9, 2020
    Applicant: Micron Technology, Inc.
    Inventors: Kunal R. Parekh, Justin B. Dorhout, Nancy M. Lomeli
  • Patent number: 10446566
    Abstract: Some embodiments include an assembly having channel material structures extending upwardly from a conductive structure. Anchor structures are laterally offset from the channel material structures and penetrate into the conductive structure to a depth sufficient to provide mechanical stability to at least a portion of the assembly. The conductive structure may include a first conductive material over a second conductive material, and may be a source line of a three-dimensional NAND configuration. Some embodiments include methods of forming assemblies to have channel material structures and anchor structures.
    Type: Grant
    Filed: December 15, 2017
    Date of Patent: October 15, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Kunal R. Parekh, Justin B. Dorhout, Nancy M. Lomeli
  • Patent number: 10446578
    Abstract: A method used in forming an array of elevationally-extending strings of memory cells comprises forming a lower stack comprising vertically-alternating insulative tiers and wordline tiers. Lower channel openings are in the lower stack. A bridge is epitaxially grown that covers individual of the lower channel openings. A lower void space is beneath individual of the bridges in the individual lower channel openings. An upper stack is formed above the lower stack. The upper stack comprises vertically-alternating insulative tiers and wordline tiers. Upper channel openings are formed into the upper stack to the individual bridges to form interconnected channel openings individually comprising one of the individual lower channel openings and individual of the upper channel openings. The interconnected channel openings individually have one of the individual bridges there-across. The individual bridges are penetrated through to uncover individual of the lower void spaces.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: October 15, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Collin Howder, Justin B. Dorhout, Anish A. Khandekar, Mark W. Kiehlbauch, Nancy M. Lomeli
  • Patent number: 10424596
    Abstract: Some embodiments include a conductive structure of an integrated circuit. The conductive structure includes an upper primary portion, with the upper primary portion having a first conductive constituent configured as a container. The container has a bottom, and a pair of sidewalls extending upwardly from the bottom. An interior region of the container is over the bottom and between the sidewalls. The upper primary portion includes a second conductive constituent configured as a mass filling the interior region of the container. The second conductive constituent is a different composition than the first conductive constituent. One or more conductive projections join to the upper primary portion and extend downwardly from the upper primary portion. Some embodiments include assemblies comprising memory cells over conductive structures. Some embodiments include methods of forming conductive structures.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: September 24, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Nancy M. Lomeli, Tom George, Jordan D. Greenlee, Scott M. Pook, John Mark Meldrim
  • Publication number: 20190198518
    Abstract: Some embodiments include a conductive structure of an integrated circuit. The conductive structure includes an upper primary portion, with the upper primary portion having a first conductive constituent configured as a container. The container has a bottom, and a pair of sidewalls extending upwardly from the bottom. An interior region of the container is over the bottom and between the sidewalls. The upper primary portion includes a second conductive constituent configured as a mass filling the interior region of the container. The second conductive constituent is a different composition than the first conductive constituent. One or more conductive projections join to the upper primary portion and extend downwardly from the upper primary portion. Some embodiments include assemblies comprising memory cells over conductive structures. Some embodiments include methods of forming conductive structures.
    Type: Application
    Filed: December 22, 2017
    Publication date: June 27, 2019
    Inventors: Nancy M. Lomeli, Tom George, Jordan D. Greenlee, Scott M. Pook, John Mark Meldrim
  • Publication number: 20190189629
    Abstract: Some embodiments include an assembly having channel material structures extending upwardly from a conductive structure. Anchor structures are laterally offset from the channel material structures and penetrate into the conductive structure to a depth sufficient to provide mechanical stability to at least a portion of the assembly. The conductive structure may include a first conductive material over a second conductive material, and may be a source line of a three-dimensional NAND configuration. Some embodiments include methods of forming assemblies to have channel material structures and anchor structures.
    Type: Application
    Filed: December 15, 2017
    Publication date: June 20, 2019
    Inventors: Kunal R. Parekh, Justin B. Dorhout, Nancy M. Lomeli