Abstract: According to one embodiment, an analysis package including a board including an electrical terminal, an analysis chip provided at the board, the chip including a detector for detecting a particle, a flow channel of a sample liquid for particle detection to the detector, and a liquid receiver for introducing the sample liquid into the flow channel, a mold provided to cover the board on which the analysis chip is provided, the mold comprising an opening above the liquid receiver, a first shield layer provided on a back surface of the board, and a second shield layer provided to be attachable and detachable on an opposite side to the analysis chip of the mold, the second shield layer being electrically connected to a part of the electrical terminal.

Abstract: A formed material is manufactured by performing forming including at least one drawing-out process and at least one drawing process performed after the drawing-out process. A punch 31 used in the drawing-out process is formed to be wider on a rear end side than on a tip end side. By pushing a raw material metal plate into a pushing hole 30a together with the punch 31, ironing is performed on a region of the raw material metal plate corresponding to a flange portion.

Abstract: According to one embodiment, a microanalysis chip includes a substrate, a flow channel in which a sample liquid is allowed to flow, the flow channel being provided on a main surface side of the substrate, a reservoir in which the sample liquid is allowed to be stored, the reservoir being provided on a main surface of the substrate, including a bank having a go-around shape and further including a liquid introduction inlet for connection to an end of the flow channel, the liquid introduction inlet being provided on the main surface of the substrate in the bank, and a filter which is provided between the liquid introduction inlet and the end of the flow channel and includes a first micropore for allowing passage of a fine particle in the sample liquid.

Abstract: A formed material having a tubular body and a flange formed at an end of the body is manufactured by multistage drawing of a blank metal sheet. The multistage drawing includes preliminary drawing in which a preliminary body having a body preform is formed from the blank metal sheet, and at least one compression drawing which is performed after the preliminary drawing and in which the body is formed by drawing the body preform while applying a compressive force to the body preform. The at least one compression drawing is performed so as to be completed before the pad portion of pressurization means reaches bottom dead center, and a support force supporting the pad portion acts as the compressive force upon the body preform when the body preform is drawn.

Abstract: According to one embodiment, a MEMS element is disclosed. The element includes a substrate, a first electrode provided on the substrate, a second electrode disposed above the first electrode, a film including a connection hole defined by an inner wall communicating with the second electrode, the film and the substrate constituting a cavity in which the first electrode and the second electrode are contained. The element further includes an interconnect connected to the second electrode. The interconnect includes a portion arranged in the connection hole.

Abstract: According to one embodiment, a MEMS device is disclosed. The device includes a substrate, a first and second MEMS elements on the substrate. Each of the first and second MEMS elements includes a fixed electrode on the substrate, a movable electrode above the fixed electrode, a first insulating film, the first insulating film and the substrate defining a cavity in which the fixed and movable electrodes are contained, and a first anchor on a surface of the first insulating film inside the cavity and configured to connect the movable electrode to the first insulating film. The cavity of the first MEMS element is closed. The cavity of the second MEMS element is opened by a through hole.

Abstract: An ironing mold according to the present invention includes a punch that is inserted into a formed portion, and a die having a pushing hole into which the formed portion is pushed together with the punch. An inner peripheral surface extends non-parallel to an outer peripheral surface of the punch, and the inner peripheral surface is provided with a clearance that corresponds to an uneven plate thickness distribution, in the pushing direction, of the formed portion prior to the ironing relative to the outer peripheral surface to ensure that an amount of ironing applied to the formed portion remains constant in the pushing direction.

Abstract: According to one embodiment, a pressure sensor includes a fixed electrode fixed on a substrate, a movable electrode provided above the fixed electrode, so as to be movable in vertical directions, a thin-film structure of a dome shape, forming, together with the substrate, a cavity to accommodate the fixed electrode and the movable electrode, the thin-film structure includes a communicating hole to communicate the cavity with an outside of the thin-film structure. A voltage is applied between the fixed electrode and the movable electrode to measure mechanical displacement of the movable electrode.

Abstract: A method of manufacturing a rectangular tube having a stepped portion includes: forming V-shaped grooves on a rectangular tube at surfaces of an end thereof in a direction parallel to a longitudinal direction thereof; and pressing each of the surfaces having the V-shaped grooves formed thereon from outside to inside, whereby the end of the rectangular tube is radially reduced.

Abstract: A method of manufacturing a rectangular tube having a stepped portion includes: forming V-shaped grooves on a rectangular tube at surfaces of an end thereof in a direction parallel to a longitudinal direction thereof; and pressing each of the surfaces having the V-shaped grooves formed thereon with a rotating roll from outside to inside, whereby the end of the rectangular tube is radially reduced.

Abstract: According to one embodiment, a MEMS device is disclosed. The device includes a substrate, a MEMS element provided on the substrate, a first film having a plurality of through holes. The first film and the substrate form a cavity containing the MEMS element. The device further includes a second film provided on the first film, a third film provided on the substrate, and including a first region and a second region outside the first region, the first region and the second region being different from each other in height from the substrate. The height from the substrate of the first region of the third film is lower than the height from the substrate of the second region of the third film.

Abstract: According to one embodiment, a MEMS device is disclosed. The device includes a substrate, a MEMS element provided on the substrate, a first film having a plurality of first through holes. The first film and the substrate form a cavity containing the MEMS element. The device further includes a second film provided on the first film, and including a second through hole communicating with a first through hole of the plurality of first through holes, and a third film provided on the second film, and closing the first through hole communicating with the second through hole.

Abstract: A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof.

Abstract: According to one embodiment, an electronic device includes a substrate, a first electrode provided stationary above the substrate and used for a variable capacitor, a second electrode provided movable above or below the first electrode and used for the variable capacitor, a first protective insulation film provided on a first surface of the first electrode, the first surface facing the second electrode, and a second protective insulation film provided on a second surface of the second electrode, the second surface facing the first electrode.

Abstract: According to one embodiment, a MEMS device is disclosed. The device includes a substrate, a first and second MEMS elements on the substrate. Each of the first and second MEMS elements includes a fixed electrode on the substrate, a movable electrode above the fixed electrode, a first insulating film, the first insulating film and the substrate defining a cavity in which the fixed and movable electrodes are contained, and a first anchor on a surface of the first insulating film inside the cavity and configured to connect the movable electrode to the first insulating film. The cavity of the first MEMS element is closed. The cavity of the second MEMS element is opened by a through hole.

Abstract: A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof.

Abstract: A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof.

Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

Abstract: A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.

Abstract: A nonvolatile semiconductor memory device comprises a memory string, and a wiring. The memory string comprises a semiconductor layer, a charge storage layer, and a plurality of first conductive layers. The plurality of first conductive layers comprises a stepped portion formed in a stepped shape such that positions of ends of the plurality of first conductive layers differ from one another. The wiring comprises a plurality of second conductive layers extending upwardly from an upper surface of the first conductive layers comprising the stepped portion. The plurality of second conductive layers are formed such that upper ends thereof are aligned with a surface parallel to the substrate, and such that a diameter thereof decreases from the upper end thereof to a lower end thereof. The plurality of second conductive layers are formed such that the greater a length thereof in the perpendicular direction, the larger a diameter of the upper end thereof.