Patents by Inventor Naohide Takamoto

Naohide Takamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10211083
    Abstract: The present invention relates to a film for flip chip type semiconductor back surface, which is to be disposed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface including an adhesive layer and a protective layer laminated on the adhesive layer, in which the protective layer is constituted of a heat-resistant resin having a glass transition temperature of 200° C. or more or a metal.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: February 19, 2019
    Assignee: NITTO DENKO CORPORATION
    Inventors: Naohide Takamoto, Goji Shiga, Fumiteru Asai
  • Publication number: 20180346640
    Abstract: The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface having a ratio of A/B falling within a range of 1 to 8×103 (%/GPa), in which A is an elongation ratio (%) of the film for flip chip type semiconductor back surface at 23° C. before thermal curing and B is a tensile storage modulus (GPa) of the film for flip chip type semiconductor back surface at 23° C. before thermal curing.
    Type: Application
    Filed: August 9, 2018
    Publication date: December 6, 2018
    Applicant: NITTO DENKO CORPORATION
    Inventors: Goji SHIGA, Naohide TAKAMOTO, Fumiteru ASAI
  • Patent number: 10141217
    Abstract: The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the increase of the peel strength between the dicing tape and the film for the backside of a flip-chip semiconductor due to heating. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, in which the difference (?2??1) of the surface free energy ?2 and the surface free energy ?1 is 10 mJ/m2 or more, where ?1 represents the surface free energy of the pressure-sensitive adhesive layer and ?2 represents the surface free energy of the film for the backside of a flip-chip semiconductor.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: November 27, 2018
    Assignee: NITTO DENKO CORPORATION
    Inventors: Naohide Takamoto, Hiroyuki Hanazono, Akihiro Fukui
  • Patent number: 10014235
    Abstract: An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150° C. before heating treatment of 50 Pa·s or more and 3,000 Pa·s or less, a viscosity change rate of 500% or less, at 150° C. as a result of the heating treatment, and a reaction rate represented by {(Qt?Qh)/Qt}×100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from ?50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from ?50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: July 3, 2018
    Assignee: NITTO DENKO CORPORATION
    Inventors: Naohide Takamoto, Hiroyuki Hanazono, Akihiro Fukui
  • Patent number: 9911683
    Abstract: The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23° C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23° C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.
    Type: Grant
    Filed: April 18, 2011
    Date of Patent: March 6, 2018
    Assignee: NITTO DENKO CORPORATION
    Inventors: Naohide Takamoto, Goji Shiga
  • Publication number: 20170330785
    Abstract: [PROBLEM] In accordance with one aspect of the present invention, to provide a tape and a sheet that make it possible to reduce cracking that would otherwise occur at the chip side face during dicing. [SOLUTION MEANS] One aspect of the present invention relates to a sheet. The sheet comprises dicing film. The dicing film comprises a base layer and an adhesive layer disposed on the base layer. The sheet further comprises a semiconductor backside protective film disposed on the adhesive layer. Shear adhesive strength at 25° C. of the semiconductor backside protective film with respect to a silicon chip is not less than 1.7 kgf/mm2.
    Type: Application
    Filed: May 8, 2017
    Publication date: November 16, 2017
    Inventors: Ryuichi KIMURA, Naohide TAKAMOTO
  • Patent number: 9768050
    Abstract: It is an object of the present invention to provide a film for semiconductor back surface having reworkability, and an application of the film. A film for semiconductor back surface has: an adhering strength at 70° C. of 7 N/10 mm or less to a wafer before the film is thermally cured; and a rupture elongation at 25° C. of 700% or less. The film for semiconductor back surface preferably has a degree of swelling due to ethanol of 1% by weight or more. The film for semiconductor back surface preferably contains an acrylic resin.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: September 19, 2017
    Assignee: NITTO DENKO CORPORATION
    Inventors: Naohide Takamoto, Ryuichi Kimura
  • Patent number: 9761475
    Abstract: The present invention relates to a film for semiconductor device production, which includes: a separator; and a plurality of adhesive layer-attached dicing tapes each including a dicing tape and an adhesive layer laminated on the dicing tape, which are laminated on the separator at a predetermined interval in such a manner that the adhesive layer attaches to the separator, in which the separator has a cut formed along the outer periphery of the dicing tape, and the depth of the cut is at most ? of the thickness of the separator.
    Type: Grant
    Filed: February 18, 2015
    Date of Patent: September 12, 2017
    Assignee: NITTO DENKO CORPORATION
    Inventors: Naohide Takamoto, Goji Shiga, Fumiteru Asai
  • Patent number: 9679797
    Abstract: The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the transfer of the coloring agent contained in a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape onto the dicing tape. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, the film for the backside of a flip-chip semiconductor contains a coloring agent, and the solubility of the coloring agent to toluene at 23° C. is 2 g/100 ml or less.
    Type: Grant
    Filed: May 12, 2015
    Date of Patent: June 13, 2017
    Assignee: NITTO DENKO CORPORATION
    Inventors: Naohide Takamoto, Hiroyuki Hanazono, Akihiro Fukui
  • Publication number: 20170140972
    Abstract: A laminated body comprising a dicing sheet and a semiconductor backside protective film, in which the dicing sheet comprises a base layer and an adhesive layer arranged over the base layer, the semiconductor backside protective film is arranged over the adhesive layer, the dicing sheet is provided with a property such that application of heat thereto causes contraction thereof, and with a property such that heat treatment thereof for one minute at 100° C. causes a second length in an MD direction following heat treatment to be not greater than 95% when expressed as a percentage such that a first length in the MD direction prior to heat treatment is taken to be 100%.
    Type: Application
    Filed: November 11, 2016
    Publication date: May 18, 2017
    Applicant: NITTO DENKO CORPORATION
    Inventors: Ryuichi KIMURA, Yuichiro SHISHIDO, Naohide TAKAMOTO
  • Publication number: 20170140973
    Abstract: [PROBLEM] To provide a laminated body and so forth that makes it possible to reduce cracking that would otherwise occur at the chip side face during dicing. [SOLUTION MEANS] This relates to a laminated body comprising a dicing sheet and a semiconductor backside protective film. The dicing sheet comprises a base layer and an adhesive layer arranged over the base layer. The semiconductor backside protective film is arranged over the adhesive layer. Tensile storage modulus of the semiconductor backside protective film following curing is not less than 1 GPa over the entire range 23° C. to 80° C.
    Type: Application
    Filed: November 11, 2016
    Publication date: May 18, 2017
    Applicant: NITTO DENKO CORPORATION
    Inventors: Ryuichi KIMURA, Naohide TAKAMOTO
  • Publication number: 20170140974
    Abstract: [PROBLEM] To provide a laminated body and so forth that makes it possible to prevent pieces of post-dicing semiconductor backside protective film from sticking to one another. [SOLUTION MEANS] This relates to a laminated body comprising a two-sided adhesive sheet and a semiconductor backside protective film arranged over the two-sided adhesive sheet. The two-sided adhesive sheet comprises a first adhesive layer, a second adhesive layer, and a base layer. The base layer is disposed between the first adhesive layer and the second adhesive layer. The first adhesive layer has a property such that application of heat causes reduction in the peel strength thereof. The first adhesive layer is disposed between the semiconductor backside protective film and the base layer.
    Type: Application
    Filed: November 11, 2016
    Publication date: May 18, 2017
    Applicant: NITTO DENKO CORPORATION
    Inventors: Ryuichi KIMURA, Naohide TAKAMOTO
  • Publication number: 20170140948
    Abstract: A method is provided for manufacturing a semiconductor package capable of preventing positional dislocation of semiconductor chip(s) as a result of contraction due to thermal curing of resin(s). This relates to a semiconductor package manufacturing method comprising an operation in which semiconductor chip(s) is/are arranged over semiconductor backside protective film which is arranged over an adhesive sheet; an operation in which semiconductor backside protective film is cured; and an operation in which semiconductor chip(s) is/are sealed with resin.
    Type: Application
    Filed: November 11, 2016
    Publication date: May 18, 2017
    Inventors: Ryuichi Kimura, Naohide Takamoto, Goji Shiga
  • Patent number: 9620403
    Abstract: The present invention provides an adhesive sheet used in manufacture of a semiconductor device, containing a filler having an average particle size of 0.3 ?m or less and an acrylic resin, wherein the content of the filler is in the range of 20 to 45% by weight with respect to the entire adhesive sheet, and the content of the acrylic resin is in the range of 40 to 70% by weight with respect to entire resin components.
    Type: Grant
    Filed: April 3, 2014
    Date of Patent: April 11, 2017
    Assignee: NITTO DENKO CORPORATION
    Inventors: Goji Shiga, Naohide Takamoto
  • Publication number: 20170018472
    Abstract: An underfill material having sufficient curing reactivity, and capable of achieving a small change in viscosity and good electrical connection even when loaded with thermal history, a laminated sheet including the underfill material, and a method for manufacturing a semiconductor device. The underfill material has a melt viscosity at 150° C. before heating treatment of 50 Pa·s or more and 3,000 Pa·s or less, a viscosity change rate of 500% or less, at 150° C. as a result of the heating treatment, and a reaction rate represented by {(Qt?Qh)/Qt}×100% of 90% or more, where Qt is a total calorific value in a process of temperature rise from ?50° C. to 300° C. and Qh is a total calorific value in a process of temperature rise from ?50° C. to 300° C. after heating at 175° C. for 2 hours in a DSC measurement.
    Type: Application
    Filed: February 20, 2015
    Publication date: January 19, 2017
    Inventors: Naohide Takamoto, Hiroyuki Hanazono, Akihiro Fukui
  • Publication number: 20160351432
    Abstract: It is an object of the present invention to provide a film for semiconductor back surface having reworkability, and an application of the film. A film for semiconductor back surface has: an adhering strength at 70° C. of 7 N/10 mm or less to a wafer before the film is thermally cured; and a rupture elongation at 25° C. of 700% or less. The film for semiconductor back surface preferably has a degree of swelling due to ethanol of 1% by weight or more. The film for semiconductor back surface preferably contains an acrylic resin.
    Type: Application
    Filed: May 31, 2016
    Publication date: December 1, 2016
    Applicant: NITTO DENKO CORPORATION
    Inventors: Naohide TAKAMOTO, Ryuichi KIMURA
  • Publication number: 20160322308
    Abstract: Disclosed are a rear surface-protective film making it possible to detect, after this film is bonded to a semiconductor wafer, a notch in this wafer, and to prevent the rear surface-protective film from being stuck out; and others. Disclosed are a rear surface-protective filmmaking it possible to detect, after this film is bonded to a semiconductor wafer, a notch in this wafer; and others. An aspect of the invention relates to a rear surface-protective film for being bonded to a rear surface of a semiconductor wafer. The film is smaller in outer circumstance than the semiconductor wafer, and a notch is provided in the film. Another aspect of the invention relates to a rear surface-protective film having a total light transmittance of 3% or more at a wavelength of 555 nm.
    Type: Application
    Filed: April 28, 2016
    Publication date: November 3, 2016
    Applicant: NITTO DENKO CORPORATION
    Inventors: Naohide TAKAMOTO, Ryuichi KIMURA
  • Publication number: 20160322252
    Abstract: Disclosed is a rear surface-protective film making it possible to watch, across this rear surface-protective film, a crack of a semiconductor element through an infrared camera, and the like. is the invention relates to a rear surface-protective film for protecting a rear surface of a semiconductor element, the film having a parallel light transmittance of 15% or more at a wavelength of 800 nm. The ratio of the parallel light transmittance at a wavelength of 800 nm to the parallel light transmittance at a wavelength of 532 nm in the rear surface-protective film is preferably 2 or more.
    Type: Application
    Filed: April 28, 2016
    Publication date: November 3, 2016
    Applicant: NITTO DENKO CORPORATION
    Inventors: Naohide TAKAMOTO, Ryuichi KIMURA
  • Publication number: 20160322272
    Abstract: Disclosed are an integrated film making it possible to detect, after the integrated film is bonded to a semiconductor wafer, a notch in this wafer; and others. An aspect of the invention relates to an integrated film including a dicing tape including a substrate and a pressure-sensitive adhesive layer disposed on the substrate; and a rear surface-protective film disposed on the pressure-sensitive adhesive layer. This rear surface-protective film has a total light transmittance of 3% or more at a wavelength of 555 nm. Another aspect of the invention relates to an integrated film having a total light transmittance of 3% or more at a wavelength of 555 nm.
    Type: Application
    Filed: April 28, 2016
    Publication date: November 3, 2016
    Applicant: NITTO DENKO CORPORATION
    Inventors: Naohide TAKAMOTO, Ryuichi KIMURA
  • Publication number: 20160322251
    Abstract: The film for a semiconductor device has a plurality of films with attached dicing tape for the backside of a flip-chip type semiconductor arranged on a separator at a prescribed interval and an outer sheet arranged outside the film with attached dicing tape for the backside of a flip-chip type semiconductor; the film with attached dicing tape for the backside of a flip-chip type semiconductor has a dicing tape and a film for the backside of a flip-chip type semiconductor; and when the length of the narrowest portion of the outer sheet is set to G and the length from the long side of the separator to the dicing tape is set to F, G is within the range from 0.2 times to 0.95 times F.
    Type: Application
    Filed: April 27, 2016
    Publication date: November 3, 2016
    Applicant: NITTO DENKO CORPORATION
    Inventors: Naohide TAKAMOTO, Ryuichi KIMURA