Patents by Inventor Naohisa Ikeya

Naohisa Ikeya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10896831
    Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: January 19, 2021
    Assignees: NuFlare Technology, Inc., Showa Denko K.K., Central Research Institute of Electric Power Industry
    Inventors: Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hiroaki Fujibayashi, Hideyuki Uehigashi, Masami Naito, Kazukuni Hara, Hirofumi Aoki, Takahiro Kozawa
  • Patent number: 10745824
    Abstract: A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: August 18, 2020
    Assignee: NuFlare Technology, Inc.
    Inventors: Kunihiko Suzuki, Naohisa Ikeya, Masayoshi Yajima, Kazukuni Hara, Hiroaki Fujibayashi, Hideki Matsuura, Katsumi Suzuki
  • Publication number: 20180374721
    Abstract: A supply part includes a first partition, a second partition under the first partition, a third partition under the second partition, a first flow path between the first partition and the second partition allowing a first gas to be introduced therein, a second flow path between the second partition and the third partition allowing a second gas to be introduced therein, a first piping extending from the second partition to reach below the third partition and being communicated with the first flow path, a second piping extending from the third partition to reach below the third partition and being communicated with the second flow path, and a convex portion provided on an outer circumferential surface of the first piping or an inner circumferential surface of the second piping protruding from one of the outer circumferential surface and the inner circumferential surface toward the other one.
    Type: Application
    Filed: August 31, 2018
    Publication date: December 27, 2018
    Inventors: Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hiroaki Fujibayashi, Hideyuki Uehigashi, Masami Naito, Kazukuni Hara, Hirofumi Aoki, Takahiro Kozawa
  • Patent number: 10157768
    Abstract: An apparatus of an embodiment includes: a processing-chamber; a susceptor capable of supporting a substrate, the susceptor including a first member having an opening in a central portion, and a second member covering the opening; a support configured to support and rotate the susceptor in the processing-chamber; and a lift disposed in the support, and capable of moving up and down at least one of the first member and the second member, wherein the support is capable of rotating the susceptor to have predefined phases with respect to the lift, and when the lift moves up, the lift is brought into contact with the first member if the susceptor is in a first phase, and the lift is brought into contact with the second member if the susceptor is in a second phase that is different from the first phase.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: December 18, 2018
    Assignee: NuFlare Technology, Inc.
    Inventors: Yoshikazu Moriyama, Naohisa Ikeya, Kunihiko Suzuki
  • Publication number: 20180135203
    Abstract: A film forming apparatus according to an embodiment includes: a film forming chamber configured to house therein a substrate to perform film forming processing; a gas supplier located in an upper part of the film forming chamber and configured to supply a process gas onto the substrate; and a heater configured to heat the substrate, wherein the film forming chamber has a temperature-increase suppression region being a lower part of the gas supplier and suppressing a temperature increase of the gas supplied to an upper part of the heater.
    Type: Application
    Filed: November 15, 2017
    Publication date: May 17, 2018
    Inventors: Kunihiko SUZUKI, Naohisa IKEYA, Masayoshi YAJIMA, Kazukuni HARA, Hiroaki FUJIBAYASHI, Hideki MATSUURA, Katsumi SUZUKI
  • Publication number: 20180135175
    Abstract: A film forming apparatus according to an embodiment includes: a film forming chamber capable of housing a substrate therein; a gas supplier located in an upper part of the film forming chamber and having a plurality of nozzles supplying gases onto a film forming face of the substrate; a heater configured to heat the substrate; and a first protection cover having a plurality of opening parts at positions corresponding to the nozzles of the gas supplier, respectively.
    Type: Application
    Filed: November 15, 2017
    Publication date: May 17, 2018
    Inventors: Kunihiko SUZUKI, Naohisa IKEYA, Masayoshi YAJIMA, Kazukuni HARA, Hiroaki FUJIBAYASHI, Hideki MATSUURA, Katsumi SUZUKI
  • Publication number: 20180090364
    Abstract: An apparatus of an embodiment includes: a processing-chamber; a susceptor capable of supporting a substrate, the susceptor including a first member having an opening in a central portion, and a second member covering the opening; a support configured to support and rotate the susceptor in the processing-chamber; and a lift disposed in the support, and capable of moving up and down at least one of the first member and the second member, wherein the support is capable of rotating the susceptor to have predefined phases with respect to the lift, and when the lift moves up, the lift is brought into contact with the first member if the susceptor is in a first phase, and the lift is brought into contact with the second member if the susceptor is in a second phase that is different from the first phase.
    Type: Application
    Filed: September 25, 2017
    Publication date: March 29, 2018
    Inventors: Yoshikazu MORIYAMA, Naohisa IKEYA, Kunihiko SUZUKI
  • Patent number: 9598792
    Abstract: A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.
    Type: Grant
    Filed: June 19, 2012
    Date of Patent: March 21, 2017
    Assignees: NuFlare Technology, Inc., Central Research Institute of Electric Power Industry, Denso Corporation, Toyota Jidosha Kabushiki Kaisha
    Inventors: Kunihiko Suzuki, Hideki Ito, Naohisa Ikeya, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Masami Naito, Hiroaki Fujibayashi, Ayumu Adachi, Koichi Nishikawa
  • Patent number: 9273412
    Abstract: A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.
    Type: Grant
    Filed: June 19, 2012
    Date of Patent: March 1, 2016
    Assignees: NuFlare Technology, Inc., Central Research Institute of Electric Power Industry, Denso Corporation, Toyota Jidosha Kabushiki Kaisha
    Inventors: Kunihiko Suzuki, Hideki Ito, Naohisa Ikeya, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Masami Naito, Hiroaki Fujibayashi, Ayumu Adachi, Koichi Nishikawa
  • Publication number: 20130068164
    Abstract: A heating unit and a film-forming apparatus comprising of a film-forming chamber, a heating unit for heating a substrate placed in the film-forming chamber, wherein the heating unit comprises of a heat source with a plane surfaced top, an electrode contacting electrically with the heat source, wherein the heat source has a ring-shape or a disk-shape that is formed by an individual, or plurality of heat source members. Wherein the heat source is comprised of a material selected from a group consisting of a carbon (C) material, a carbon material or a silicon carbide (SiC) material coated with silicon carbide (SiC), and a silicon carbide (SiC) material, and wherein the heat source has a ratio of the width (a) of the top portion direction to the thickness (X) of the side part (a/X) is 3 to 10.
    Type: Application
    Filed: September 12, 2012
    Publication date: March 21, 2013
    Inventors: Naohisa IKEYA, Kunihiko Suzuki, Yuusuke Sato
  • Publication number: 20120325138
    Abstract: A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.
    Type: Application
    Filed: June 19, 2012
    Publication date: December 27, 2012
    Applicants: NuFlare Techology, Inc., Toyota Jidosha Kabushiki Kaisha, Denso Corporation, Central Res. Institute of Electric Power Industry
    Inventors: Kunihiko SUZUKI, Hideki Ito, Naohisa Ikeya, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Masami Naito, Hiroaki Fujibayashi, Ayumu Adachi, Koichi Nishikawa
  • Patent number: 8008168
    Abstract: A method for manufacturing a semiconductor device, comprising: loading a wafer to be subjected to film formation to a chamber; supporting the wafer to be spaced from a film formation position of the wafer; preliminarily heating the wafer while rotating a rotating member for rotating the wafer through a supporting member during the film formation at a predetermined rotational speed under a state of the wafer to be spaced from the film formation position; placing the wafer on the supporting member in the film formation position; and heating the wafer at a predetermined temperature and supplying a process gas onto the wafer while rotating the wafer.
    Type: Grant
    Filed: March 23, 2010
    Date of Patent: August 30, 2011
    Assignee: NuFlare Technology, Inc.
    Inventors: Hideki Ito, Naohisa Ikeya
  • Publication number: 20100240223
    Abstract: A method for manufacturing a semiconductor device, comprising: loading a wafer to be subjected to film formation to a chamber; supporting the wafer to be spaced from a film formation position of the wafer; preliminarily heating the wafer while rotating a rotating member for rotating the wafer through a supporting member during the film formation at a predetermined rotational speed under a state of the wafer to be spaced from the film formation position; placing the wafer on the supporting member in the film formation position; and heating the wafer at a predetermined temperature and supplying a process gas onto the wafer while rotating the wafer.
    Type: Application
    Filed: March 23, 2010
    Publication date: September 23, 2010
    Inventors: Hideki ITO, Naohisa Ikeya