Abstract: An optical apparatus includes: a base; a light emitting element arranged on the base and configured to output laser light; a plurality of optical components arranged on the base and configured to guide the laser light output from the light emitting element to an optical fiber, and couple the laser light with the optical fiber; and a shielding unit arranged on the base and configured to block stray light deviated from a predetermined optical path in a first optical component as the optical component and traveling to a second optical component as the optical component, and reflect the stray light in a direction deviating from the first optical component.

Abstract: An optical fiber support structure includes: a first portion configured to support an optical fiber including a core wire and a covering surrounding the core wire, the core wire including a core and a cladding; a second portion attached to the first portion; and a relaxing portion that is connected to an end portion of the core wire and that is positioned between the first portion and the second portion, the relaxing portion having a light receiving surface configured to receive light input from a space, an area of the light receiving surface being larger than an area of the end portion of the core wire.

Abstract: A supporting member supports a peeled end portion formed at an end portion in longitudinal direction representing first direction of an optical fiber, the optical fiber including: a core wire including a core and a cladding; and a jacket configured to enclose the core wire, the jacket being removed at the peeled end portion to expose the core wire. The supporting member includes: a first member; a second member fixed to the first member; a housing portion provided between the first member and the second member, the housing portion extending along the peeled end portion and being configured to house the peeled end portion; and a processed member housed in the housing portion and provided around the peeled end portion, the processed member being configured to cause transmission or scattering of light leaking from the peeled end portion.

Abstract: An optical part includes: an optical fiber having a core portion and a cladding portion that is formed around the core portion; a light absorber placed around the optical fiber; and an adhesive member that adheres the light absorber and the optical fiber to each other. Further, the cladding portion includes: a main portion extending along a longitudinal direction and having a main portion cladding diameter; and an input end portion positioned closer to a light input side with respect to the main portion, and an input end face cladding diameter at an input end face of the input end portion is less than the main portion cladding diameter.

Abstract: A semiconductor laser module includes a package; a plurality of semiconductor laser elements provided in the package; a member having a plurality of mounting surfaces on which the semiconductor laser elements are mounted, the mounting surfaces being separated from a bottom surface of the package by respective distances, the distances being gradually different from each other in a manner that the mounting surfaces as a whole form a step-like form; a plurality of lenses collimating respective laser beams emitted from the semiconductor laser elements; a plurality of reflection mirrors reflecting the respective laser beams; a condenser lens unit condensing the laser beams; an optical fiber where the optical beams condensed by the condenser lenses are optically coupled; and an optical filter disposed on optical lines of the respective laser beams reflected by the reflection mirrors and reflecting light having wavelengths different from the wavelengths of the laser beams.

Abstract: An optical module includes a base portion having a top-surface metal layer on a top surface of a base, a semiconductor element on the top-surface metal layer and an optical element optically-coupled to the semiconductor element and bonded to the base with adhesive at a first side surface of the base at a side of the optical element being optically-coupled. A pull-back area is formed on the top surface by disposing a second side surface at the side, of the top-surface metal layer at a retracted position to the first side surface at the side. Between an adhesion area where the base and the optical element are bonded and a mounting portion below an optical-power-outputting surface of the semiconductor element, the top-surface metal layer has an adhesive flow stopping portion formed, by patterning, so as to prevent the adhesive from flowing through the pull-back area to the mounting portion's side.

Abstract: A semiconductor laser module includes a package; a plurality of semiconductor laser elements provided in the package; a member having a plurality of mounting surfaces on which the semiconductor laser elements are mounted, the mounting surfaces being separated from a bottom surface of the package by respective distances, the distances being gradually different from each other in a manner that the mounting surfaces as a whole form a step-like form; a plurality of lenses collimating respective laser beams emitted from the semiconductor laser elements; a plurality of reflection mirrors reflecting the respective laser beams; a condenser lens unit condensing the laser beams; an optical fiber where the optical beams condensed by the condenser lenses are optically coupled; and an optical filter disposed on optical lines of the respective laser beams reflected by the reflection mirrors and reflecting light having wavelengths different from the wavelengths of the laser beams.

Abstract: A semiconductor laser module includes a semiconductor laser element outputting a laser light; an optical fiber; an optical component disposed at an outer periphery of the optical fiber and fixing the optical fiber; a first-fixing agent fastening the optical component and the optical fiber; a light-absorbing element disposed at an outer periphery of the optical component and fixing the optical component; a first light-blocking portion disposed between an end into which the laser light is incident of the optical fiber and the optical component; and a housing accommodating therein the semiconductor laser element, an end into which the laser light is incident of the optical fiber and the first light-blocking portion. The optical component has an optical transmittance at a wavelength of the laser light, and the light-absorbing element has an optical absorptivity at a wavelength of the laser light.

Abstract: A semiconductor laser module includes: a semiconductor laser element emitting a laser light; an optical fiber, into which the laser light emitted from the semiconductor laser element is incident, guiding the laser light; and an optical-fiber-holding unit having a fixing agent and holding the optical fiber, the fixing agent being for fixing the optical fiber. The fixing agent is provided at an area in which a power of a leakage light of the laser light having been incident into the optical fiber and then emitted to outside the optical fiber is low.

Abstract: A semiconductor laser module includes a semiconductor laser element outputting a laser light; an optical fiber; an optical component disposed at an outer periphery of the optical fiber and fixing the optical fiber; a first-fixing agent fastening the optical component and the optical fiber; a light-absorbing element disposed at an outer periphery of the optical component and fixing the optical component; a first light-blocking portion disposed between an end into which the laser light is incident of the optical fiber and the optical component; and a housing accommodating therein the semiconductor laser element, an end into which the laser light is incident of the optical fiber and the first light-blocking portion. The optical component has an optical transmittance at a wavelength of the laser light, and the light-absorbing element has an optical absorptivity at a wavelength of the laser light.

Abstract: A semiconductor laser module 1 is mainly composed of a package 3, a semiconductor laser 5, lenses 7, 9, 13, reflecting mirrors 11, an optical fiber 15, and the like. The package 3 is composed of a bottom part and side surfaces 19a, 19b. The side surfaces 19a, 19b stand erect approximately vertical to the bottom part of the package. In the semiconductor laser module 1, a plurality of semiconductor laser installation surfaces 17 are formed in a step-like shape. On each semiconductor laser installation surface 17, a semiconductor laser 5 is installed. A lens 7 is arranged at the anterior (in the emission direction) of the semiconductor laser 5. Moreover, a lens 9 is arranged further to the anterior. A reflecting mirror 11 is fixed to the side surface 19a, which is provided facing the emission direction of the semiconductor laser 5.

Abstract: A semiconductor laser module includes: a semiconductor laser element emitting a laser light; an optical fiber, into which the laser light emitted from the semiconductor laser element is incident, guiding the laser light; and an optical-fiber-holding unit having a fixing agent and holding the optical fiber, the fixing agent being for fixing the optical fiber. The fixing agent is provided at an area in which a power of a leakage light of the laser light having been incident into the optical fiber and then emitted to outside the optical fiber is low.

Abstract: An optical module includes a base portion having a top-surface metal layer on a top surface of a base, a semiconductor element on the top-surface metal layer and an optical element optically-coupled to the semiconductor element and bonded to the base with adhesive at a first side surface of the base at a side of the optical element being optically-coupled. A pull-back area is formed on the top surface by disposing a second side surface at the side, of the top-surface metal layer at a retracted position to the first side surface at the side. Between an adhesion area where the base and the optical element are bonded and a mounting portion below an optical-power-outputting surface of the semiconductor element, the top-surface metal layer has an adhesive flow stopping portion formed, by patterning, so as to prevent the adhesive from flowing through the pull-back area to the mounting portion's side.

Abstract: A semiconductor laser module 1 is mainly composed of a package 3, a semiconductor laser 5, lenses 7, 9, 13, reflecting mirrors 11, an optical fiber 15, and the like. The package 3 is composed of a bottom part and side surfaces 19a, 19b. The side surfaces 19a, 19b stand erect approximately vertical to the bottom part of the package. In the semiconductor laser module 1, a plurality of semiconductor laser installation surfaces 17 are formed in a step-like shape. On each semiconductor laser installation surface 17, a semiconductor laser 5 is installed. A lens 7 is arranged at the anterior (in the emission direction) of the semiconductor laser 5. Moreover, a lens 9 is arranged further to the anterior. A reflecting mirror 11 is fixed to the side surface 19a, which is provided facing the emission direction of the semiconductor laser 5.

Abstract: A laser module includes a semiconductor laser element and a feedback optical component forming an external cavity with the semiconductor laser element. Even if a ratio of a current threshold of the laser module changing according to a polarized state of returned light from the feedback optical component to a current threshold of the semiconductor laser element is in an arbitrary range within a predetermined range, a total value of a relative intensity noise occurring between a first frequency determined according to a cavity length of the external cavity and at least equal to or more than a frequency band of using a laser light and a second frequency calculated by multiplying the first frequency by a predetermined number is equal to or more than ?40 dB.

Abstract: A laser module includes a semiconductor laser element and a feedback optical component forming an external cavity with the semiconductor laser element. Even if a ratio of a current threshold of the laser module changing according to a polarized state of returned light from the feedback optical component to a current threshold of the semiconductor laser element is in an arbitrary range within a predetermined range, a total value of a relative intensity noise occurring between a first frequency determined according to a cavity length of the external cavity and at least equal to or more than a frequency band of using a laser light and a second frequency calculated by multiplying the first frequency by a predetermined number is equal to or more than ?40 dB.

Abstract: A package accommodates an LD device for emitting laser light with the center wavelength of which is in a range of 1300 to 1440 nm and airtight seals a light path extending from the LD device to an incident end of an optical fiber. The package is filled with a nitrogen gas at a standard atmospheric pressure with the amount of moisture limited to a value lower than 100000 ppm by volume or less. Therefore, the amount of moisture in the light path for laser light within the package is limited to 100000 ppm by volume or less.

Abstract: An n-InP buffer layer, a GRIN-SCH-MQW active layer, and a p-InP spacer layer are sequentially grown on an n-InP substrate. A p-InP blocking layer and an n-InP blocking layer are grown adjacent to an upper region of the n-InP buffer layer, the GRIN-SCH-MQW active layer, and the p-InP spacer layer. A p-InP cladding layer, a p-GalnAsP contact layer, and a p-side electrode are grown on the p-InP spacer layer and the n-InP blocking layer. An n-side electrode is disposed on a rear surface of the n-InP substrate. A grating is disposed within the p-InP spacer layer. The grating selects a light of which number of longitudinal modes is equal to or more than 2 and equal to or less than 60, each of which has an intensity difference equal to or less than 10 decibels from a maximum intensity.

Abstract: A semiconductor laser module contains a wavelength selective feedback mechanism that has a center wavelength positioned a predetermined wavelength separation away from a peak gain curve of multiple output modes of light produced by a semiconductor laser contained in the module. In particular, the amount of separation between the center wavelength of the wavelength selective feedback mechanism is set such that modes occurring a predetermined wavelength separation on either side of the center wavelength, are on a same side of a gain curve of the semiconductor laser, with regard to a wavelength in which peak gain is observed. With lasers that have ripples in a characteristic gain curve thereof, the bandwidth of the wavelength selective feedback mechanism is set so that the local peaks of the gain curve decrease (or increase) monotonically therethrough. When the ripples are absent in the gain curve, the slope of the gain curve remains monotonic throughout the reflectance bandwidth.

Abstract: A package accommodates an LD device for emitting laser light with the center wavelength of which is in a range of 1300 to 1440 nm and airtight seals a light path extending from the LD device to an incident end of an optical fiber. The package is filled with a nitrogen gas at a standard atmospheric pressure with the amount of moisture limited to a value lower than 100000 ppm by volume or less. Therefore, the amount of moisture in the light path for laser light within the package is limited to 100000 ppm by volume or less.