Abstract: A circulation device according to an aspect includes an ink circulation unit that circulates ink via an ink head that discharges the ink, and a treatment liquid circulation unit that circulates a non-color-developing treatment liquid via a treatment liquid head that discharges the treatment liquid. In an embodiment, in the circulation device, a circulation flow rate of the ink in the ink circulation unit is different from a circulation flow rate of the treatment liquid in the treatment liquid circulation unit.

Abstract: An infrared processing system includes a first thermal image generating unit, an object extracting unit, a second thermal image generating unit, and an object temperature calculating unit. The first thermal image generating unit generates, using a first temperature correction value, a first thermal image based on the output signal of the image sensor. The object extracting unit extracts the object from the first thermal image. The second thermal image generating unit generates, using a second temperature correction value corresponding to the object that has been extracted by the object extracting unit, a second thermal image based on the output signal of the image sensor. The object temperature calculating unit calculates, based on the second thermal image that has been generated by the second thermal image generating unit, a temperature of the object that has been extracted by the object extracting unit.

Abstract: The present invention is a composition for forming a metal-containing film, containing: (A) a metal compound containing at least one kind of metal selected from the group consisting of Ti, Zr, and Hf; (B) a crosslinking agent containing, per molecule, 2 or more and 4 or fewer cyclic ether structures having 2 to 13 carbon atoms; and (C) a solvent. This can provide: a composition for forming a metal-containing film having better dry etching resistance than conventional organic underlayer film materials and also having high filling and planarizing properties; and a patterning process in which the composition is used.

Abstract: The present invention is a compound for forming a metal-containing film, where the compound is represented by the following general formula (M), where R1 and R2 each independently represent an organic group or a halogen atom; and W represents a divalent organic group represented by the following general formula (W-1) or (W-2). This can provide: a compound for forming a metal-containing film having excellent dry etching resistance and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.

Abstract: The present invention is a compound for forming a metal-containing film, being a reaction product between a compound having two or more diol structures per molecule and a Sn compound, and being a monomolecular compound containing two or more Sn atoms per molecule. This can provide: a metal compound having better dry etching resistance than conventional organic underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.

Abstract: The present invention aims to provide: a compound for forming a metal-containing film that yields a resist middle layer film enabling to obtain a favorable pattern shape and having high adhesiveness to a resist upper layer film to prevent collapse of a fine pattern in a fine patterning process in a semiconductor device manufacturing process; a composition for forming a metal-containing film using the compound; and a patterning process using the composition. A compound for forming a metal-containing film contains: at least one metal atom selected from a group consisting of Ti, Zr, and Hf; and a multidentate ligand coordinated to the metal atom and containing a cyclic ether structure having 2 to 13 carbon atoms.

Abstract: The present invention provides a method for forming by plasma irradiation a resist underlayer film with excellent dry etching resistance and film thickness uniformity, the method including: (i) applying a composition containing (A) a polymer and (B) an organic solvent, and performing heat treatment; and (ii) forming a resist underlayer film by plasma irradiation, where the polymer (A) contains a constitutional unit of formula (1) and has a weight-average molecular weight of 2,500 to 20,000: where Ar1 and Ar2 represent a benzene ring or naphthalene ring, X represents a structure of formula (1A), Y represents an organic group, “k” represents 0 or 1, where “n1” represents 0 or 1, “n2” represents 1 or 2, R2 represents a hydrogen atom, an organic group, or a structure of formula (1B), R3 represents a hydrogen atom, an alkyl group, an aryl group, or a group of formula (1C), “n3” represents 0 to 2, where RA represents an organic group, RB represents a hydrogen atom or an organic group, and where R4 r

Abstract: The present invention is a method for forming a resist underlayer film on a substrate, the method including the steps of: (i) forming an underlayer-film-precursor film by coating a substrate with a composition for forming a resist underlayer film, containing (A) a polymer and an organic solvent, to obtain a coating film and subjecting the coating film to heat treatment at a temperature of 100° C. or higher and 800° C. or lower for 10 seconds to 7,200 seconds to cure the coating film; and (ii) forming a resist underlayer film by curing the underlayer-film-precursor film by plasma irradiation, where the polymer (A) is an aromatic ring-containing resin containing no hydroxy groups or organic groups represented by the following general formulae (1) in a repeating unit contained in the polymer, where “p” represents 0 or 1, and “*” represents an attachment point.

Abstract: The present invention is a compound for forming a metal-containing film, containing: at least one metal atom selected from the group consisting of Ti, Zr, and Hf; and a ligand coordinated to the metal atom, where the ligand contains a group represented by any of the following formulae (a-1) to (a-3), where R1 represents a hydrogen atom or an organic group having 1 to 10 carbon atoms, and “*” represents an attachment point. This can provide: a compound for forming a metal-containing film that gives a metal-containing film that makes it possible to obtain an excellent pattern profile, has high adhesiveness to a resist upper layer film, and suppresses fine-pattern collapse in a fine patterning process of a semiconductor device manufacturing process; a composition for forming a metal-containing film, containing the compound; and a patterning process using the composition.

Abstract: The present invention is a composition for forming a resist underlayer film, containing: (A) a polymer having a structure represented by the following general formula (1) as a repeating unit; and (B) an organic solvent, where the polymer (A) has a molecular weight of 300 to 3,000, and the polymer (A) contains neither a repeating unit containing a hydroxy group as a substituent nor a repeating unit containing a heteroaromatic ring, and where Ar represents an unsubstituted divalent aromatic group having 6 to 30 carbon atoms. This can provide a composition for forming a resist underlayer film with which it is possible to form a resist underlayer film that exhibits much better dry etching resistance than those of conventional organic underlayer film materials.

Abstract: The present invention is a pattern forming method includes steps of: forming a resist underlayer film by using a composition for forming a resist underlayer film on a substrate to be processed; forming a resist middle layer film on the resist underlayer film; forming a resist upper layer film on the resist middle layer film; forming a pattern in the resist upper layer film; transferring the pattern to the resist middle layer film; transferring the pattern to the resist underlayer film; forming the pattern in the substrate to be processed; trimming the resist underlayer film; and forming a staircase-shaped pattern in the substrate to be processed. The composition for forming a resist underlayer film contains a resin and an organic solvent. The resin represented by the following formula (1) is used.

Abstract: The optical transmission module provided is designed to be simpler, smaller, and faster. It consists of a housing that holds one or more stacked substrates, partially exposed. Inside the housing, there is a light emitter that generates optical signals and an optical functional element that processes the transmission signal for driving the light emitter. Multiple terminals extend from the inside to the outside of the housing on the substrates. The terminals are divided into two groups: the first group connects to electrodes of a high-frequency circuit in the optical functional element, and the second group connects to electrodes of a low-frequency circuit. The length between the upper surfaces of the first group terminals and the high-frequency circuit electrodes is shorter than the length between the upper surfaces of the second group terminals and the low-frequency circuit electrodes, in the direction perpendicular to the substrates' major surface.

Abstract: The present invention is a compound (A) for forming a metal-containing film, where the compound is derived from a metal-containing compound, being a hydrolysate, condensate, or hydrolysis condensate of a metal compound represented by the following formula (A-1), and the compound (A) further has a ligand derived from an organic compound represented by the following formula (1). This can provide a compound for forming a metal-containing film having better dry etching resistance than those of conventional organic underlayer film materials and also having high filling property and/or high planarizing property.

Abstract: A direct-diode laser oscillator 1 can emit laser light to a laser processing head 3 based on the driving commands received from a system controller 5, which can control a laser robot 4 including the laser processing head 3. The direct-diode laser oscillator 1 includes the following: laser modules 10 each including a plurality of laser diodes connected in series or in parallel; a power supply circuit 20 for driving the laser modules 10 at a constant current, and a power controller 30 for controlling the power supply circuit 20 based on the driving commands and performing a fault diagnosis of the laser oscillator 1 based on which one of a plurality of previously divided regions of a diagnosis map the current and voltage applied to the laser modules 10 belong to.

Abstract: A medium processing apparatus includes a liquid applier, a crimper, a stapler, and circuitry. The liquid applier applies liquid to a liquid application position of a medium. The crimper presses and deforms at least a part to which the liquid is applied by the liquid applier, to bind a plurality of media including the medium to which the liquid is applied. The stapler performs stapling with a staple on a medium bundle in which the plurality of media is bound by the crimper. The circuitry controls operations of the crimper, the liquid applier, and the stapler, and selectively switches between first binding performed by the liquid applier and the crimper and second binding performed by only the stapler, in accordance with information on the medium or a binding position at which the medium bundle is bound by the crimper.

Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is represented by the following general formula (M). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.

Abstract: The present invention is a composition for forming a resist underlayer film used for a multilayer resist method contains (A) a resin, (B) a base generator, and (C) an organic solvent, wherein a weight-average molecular weight of (A) the resin is 3,000 to 10,000, (A) the resin is (A-1) a resin containing a phenolic hydroxyl group and a group obtained by modifying a phenolic hydroxyl group, or (A-2) a mixture of a resin containing a phenolic hydroxyl group and a resin containing a group obtained by modifying a phenolic hydroxyl group, and (A) the resin satisfies relations of a+b=1, 0.1?a?0.5, and 0.5?b?0.9, wherein “a” is a proportion of a phenolic hydroxyl group and “b” is a proportion of a group obtained by modifying a phenolic hydroxyl group contained in (A) the resin. This provides: a composition for forming a resist underlayer film having an excellent filling property and adhesiveness to a substrate, and a patterning process using thereof are to be provided.

Abstract: The estimator learning device contains an image acquisition unit that acquires stained images provided by photographing respectively in a plurality of wavebands a biomaterial sample that has been stained with a prescribed staining solution; a cell nucleus extraction unit that extracts a cell nucleus region present in the biomaterial sample in each of the stained images; a color information acquisition unit that calculates, for each of the stained images, an absorbance in each of the wavebands in the cell nucleus region; and an estimator learning unit that, based on a relationship between the absorbance in each of the wavebands and information associated with the biomaterial sample and relating to whether the cell nucleus present in the biomaterial sample is in a prescribed state, trains an estimator that estimates whether the cell nucleus is in the prescribed state from the absorbance in each of the wavebands.

Abstract: To provide a wavelength variable laser apparatus in which wet-spreading of an adhesive is suppressed when a semiconductor gain chip is mounted on a photonics element with an adhesive. A wavelength variable laser apparatus includes a semiconductor gain chip, a carrier on which the semiconductor gain chip is mounted, and a photonics element adhered to an end surface of the carrier with an adhesive. A lower end part in a longitudinal direction of the semiconductor gain chip is disposed in such a way as to face an upper end part in a longitudinal direction of the photonics element. Discontinuous shapes are formed on an area above a part of the end surface of the carrier to which the adhesive is applied.