Abstract: A magnetic bubble memory device comprises contiguous-disk ion-implanted magnetic bubble propagation tracks formed by implanting selectively ions in a magnetic layer which can hold magnetic bubbles. At least one of the disks which form the ion-implanted bubble tracks and each of which may have a circular or square shape, is configured to include a combination of arcs of circles having different curvatures or a combination of sides of squares having different sizes.

Abstract: A hybrid magnetic bubble memory device includes, magnetic bubble propagation tracks formed of partial ion-implantation and bubble propagation tracks formed of a soft magnetic material pattern. At least one of the junctions between the two type tracks is located on a corner soft magnetic material pattern where the bubble propagation direction is changed, and the hairpin conductor is superposed on the part of the corner pattern under which the magnetic material is not ion-implanted to form ion-implanted propagation tracks.

Abstract: A highly density magnetic bubble memory device has bubble propagation paths having different pattern periods. The distance between a propagation path having shorter period and a magnetic film for holding magnetic bubbles is made smaller than that between propagation path having longer period and the magnetic film. An insulating layer formed between the propagation path and the magnetic film through another insulating layer has a declining slope having an angle of 60.degree. or less, thereby ensuring steady propagation of the magnetic bubbles along the propagation path.

Abstract: Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implantation pattern and a second bubble propagation path made of permalloy elments in combination. The majority of the area for forming the second propagation path is processed by ion implantation in lower density and to smaller depth than those of ion implantation for forming the first propagation path on the surface of a bubble supporting layer.

Abstract: A magnetic bubble stretcher comprises a bubble fanning part for propagating a magnetic bubble while gradually stretching the bubble and a bubble propagation part for propagating the stretcher bubble. The bubble fanning and propagation parts include a bubble propagation patterns as fundament elements for stretching or propagating the bubble the bubble propagation patterns in the bubble fanning part are different in shape and/or dimension from the bubble propagation patterns in the bubble propagation part.

Abstract: A magnetic bubble device includes ion-implanted bubble propagation tracks of meandering cord-like configuration to assure improved bubble propagation characteristic. Amplitude of a region in which inplane magnetization layer is absent or alternatively thickness thereof is smaller than that of other region, as measured in the direction perpendicular to the bubble propagating direction, is not greater than 7/8 of a pitch of the meandering pattern in the bubble propagating direction. The amplitude is more preferably selected so as to meet the condition that 1/4.ltoreq.W/P.ltoreq.3/4 for assuring much stabilized bubble propagating operation.

Abstract: A magnetic bubble memory device has two types of magnetic bubble propagation tracks. One type of magnetic bubble propagation tracks are formed by implanting ions into a magnetic layer. The other are formed by a soft magnetic material, for example, a permalloy. At least the area where the soft magnetic material is located has a smaller thickness than the other area.

Abstract: A magnetic bubble memory device is disclosed which is equipped with a minor loop of a magnetic bubble propagation track formed by ion implantation and a major loop or major line of a magnetic bubble propagation track consisting of a soft magnetic film and in which the thickness of an insulating film at at least the junction between the minor loop and the major loop or major line is less than the thickness of insulating film at the major line or major loop.

Abstract: In a magnetic bubble replicator having a soft magnetic material element for propagating a magnetic bubble along an edge thereof in response to a change in a direction of an external magnetic field and a hairpin-shaped conductor superimposed on the soft magnetic material element, an angle between a slit of the conductor and a propagation path of the magnetic bubble of the soft magnetic material element is set to no less than 90 degrees, preferably 5-85 degrees, and more preferably to 45-60 degrees.

Abstract: A magnetic bubble device in which a first propagation path having a cyclic shape formed by selectively implanting ions into a magnetic film capable of holding magnetic bubbles and a second propagation path including soft magnetic material elements are arranged on the same chip. A soft magnetic material element having a length in the direction perpendicular to the direction of bubble propagation in the first propagation path which is not less than 2.5 times the period of the first propagation path is included in the junction between the first and second propagation paths.

Abstract: A magnetic bubble memory device is disclosed in which a magnetic bubble propagation circuit for forming a minor loop is formed by ion implantation, and at least part of a major line or major loop and at least part of connecting portions between the minor loop and the major line or major loop are formed of a film of a soft magnetic material.

Abstract: A hybrid magnetic bubble memory device includes a first magnetic bubble propagation tracks formed of a portion of the boundary between first and second regions of a magnetic medium film having uniaxial anisotropy and adapted to be applied with a magnetic field in a direction perpendicular to the magnetic medium film to generate magnetic bubbles therein, and a second magnetic bubble propagation tracks formed of a soft magnetic material film on the magnetic medium film and connected with the first magnetic bubble propagation tracks. The first region is implanted with ions under ion-implant conditions different from those for the second region, and thus the above boundary is produced.

Abstract: A conductor pattern and an ion implanting mask are simultaneously formed by photoetching a conductor film through a single photoresist pattern. An area on which a conductor pattern is to be formed is covered with a photoresist, and ions are implanted to a magnetic film using the conductor film portion not convered with the photoresist, to form a magnetic bubble propagation track. The ion implantation mask and the conductor pattern are formed simultaneously through one mask. Accordingly, reduction of accuracy due to an error in mask alignment is prevented and the manufacturing is facilitated.

Abstract: A magnetic bubble memory device comprises a magnetic bubble propagation track formed by ion implantation. A region enclosed by the propagation track and lightly or shallowly implanted with ions on a condition differing from that for forming the propagation track or not implanted with ions at all is provided with a island-like isolated region heavily or deeply implanted with ions on the same condition as that for forming the propagation track.

Abstract: Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implanted pattern and a second bubble propagation path formed of permalloy elements, both paths being spaced out from each other by a distance larger than or equal to the diameter of the magnetic bubble, and a propagation path connecting structure in which a hairpin-shaped conductor for connecting both propagation paths is disposed between them.

Abstract: The magnetic bubble memory device according to this invention comprises an active magnetic bubble memory region formed by implanting ions into a layer of magnetic bubble material, a propagation loop having inner and outer propagation tracks formed by ion implantation so as to surround this region and to propagate captured magnetic bubbles along the circumference of this region, and at least one opening portion provided at the propagation loop so as to propagate magnetic bubbles in the inner propagation track to the outer propagation track.

Abstract: A magnetic bubble memory has a first bubble propagation track formed with an ion-implanted pattern and a second bubble propagation track formed with permalloy members connected to each other to form a storage loop. The arrangement is such that a position of an attractive magnetic pole created in one of the permalloy members coincides with a position of an attractive charged wall appearing in the ion-implanted layer at a junction of the first and second bubble propagation tracks when a driving magnetic field is in a particular range of direction.

Abstract: The pressure-sensitive resistor comprising an electroconductive elastomer, in which an electroconductive particulate material is dispersed, two electrodes placed on the opposing surfaces of the elastomer, a means for providing a compressive force between the electrodes and a means for adjusting the compressive force, works on a novel principle that the elastomer composite exhibits a positive coefficient in the curve of compression vs. resistance relationship when the compressive force is varied in a region exceeding an inversion point at which the resistance of the elastomer as measured in the direction of compression is minimal. The coefficient in this positive region is smaller than in the ordinary negative region, so that the variable resistance of the resistor can be controlled very delicately together with the decreased contribution of the uncontrollable contact resistance.