Naoki Kodama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A magnetic bubble device in which a first propagation path having a cyclic shape formed by selectively implanting ions into a magnetic film capable of holding magnetic bubbles and a second propagation path including soft magnetic material elements are arranged on the same chip. A soft magnetic material element having a length in the direction perpendicular to the direction of bubble propagation in the first propagation path which is not less than 2.5 times the period of the first propagation path is included in the junction between the first and second propagation paths.
Abstract: A magnetic bubble memory device is disclosed in which a magnetic bubble propagation circuit for forming a minor loop is formed by ion implantation, and at least part of a major line or major loop and at least part of connecting portions between the minor loop and the major line or major loop are formed of a film of a soft magnetic material.
Abstract: A hybrid magnetic bubble memory device includes a first magnetic bubble propagation tracks formed of a portion of the boundary between first and second regions of a magnetic medium film having uniaxial anisotropy and adapted to be applied with a magnetic field in a direction perpendicular to the magnetic medium film to generate magnetic bubbles therein, and a second magnetic bubble propagation tracks formed of a soft magnetic material film on the magnetic medium film and connected with the first magnetic bubble propagation tracks. The first region is implanted with ions under ion-implant conditions different from those for the second region, and thus the above boundary is produced.
Abstract: A conductor pattern and an ion implanting mask are simultaneously formed by photoetching a conductor film through a single photoresist pattern. An area on which a conductor pattern is to be formed is covered with a photoresist, and ions are implanted to a magnetic film using the conductor film portion not convered with the photoresist, to form a magnetic bubble propagation track. The ion implantation mask and the conductor pattern are formed simultaneously through one mask. Accordingly, reduction of accuracy due to an error in mask alignment is prevented and the manufacturing is facilitated.
Abstract: A magnetic bubble memory device comprises a magnetic bubble propagation track formed by ion implantation. A region enclosed by the propagation track and lightly or shallowly implanted with ions on a condition differing from that for forming the propagation track or not implanted with ions at all is provided with a island-like isolated region heavily or deeply implanted with ions on the same condition as that for forming the propagation track.
Abstract: Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implanted pattern and a second bubble propagation path formed of permalloy elements, both paths being spaced out from each other by a distance larger than or equal to the diameter of the magnetic bubble, and a propagation path connecting structure in which a hairpin-shaped conductor for connecting both propagation paths is disposed between them.
Abstract: The magnetic bubble memory device according to this invention comprises an active magnetic bubble memory region formed by implanting ions into a layer of magnetic bubble material, a propagation loop having inner and outer propagation tracks formed by ion implantation so as to surround this region and to propagate captured magnetic bubbles along the circumference of this region, and at least one opening portion provided at the propagation loop so as to propagate magnetic bubbles in the inner propagation track to the outer propagation track.
Abstract: A magnetic bubble memory has a first bubble propagation track formed with an ion-implanted pattern and a second bubble propagation track formed with permalloy members connected to each other to form a storage loop. The arrangement is such that a position of an attractive magnetic pole created in one of the permalloy members coincides with a position of an attractive charged wall appearing in the ion-implanted layer at a junction of the first and second bubble propagation tracks when a driving magnetic field is in a particular range of direction.
Abstract: The pressure-sensitive resistor comprising an electroconductive elastomer, in which an electroconductive particulate material is dispersed, two electrodes placed on the opposing surfaces of the elastomer, a means for providing a compressive force between the electrodes and a means for adjusting the compressive force, works on a novel principle that the elastomer composite exhibits a positive coefficient in the curve of compression vs. resistance relationship when the compressive force is varied in a region exceeding an inversion point at which the resistance of the elastomer as measured in the direction of compression is minimal. The coefficient in this positive region is smaller than in the ordinary negative region, so that the variable resistance of the resistor can be controlled very delicately together with the decreased contribution of the uncontrollable contact resistance.