Abstract: Pharmaceutical compositions comprising an active pharmaceutical ingredient, a high viscosity liquid carrier material, a hydrophobic solvent, and a hydrophilic solvent are disclosed. Also disclosed are methods of manufacturing and using the compositions. The compositions are suitable for use, e.g., as depot formulations.

Abstract: Provided is a substrate wiring path inspection system whereby, at the time of performing electrical inspection of a wiring path of a substrate having a surface on which a plurality of electrically independent wiring paths are formed, whether a probe is reliably electrically connected to the wiring path can be easily checked at a low equipment cost. The present invention is configured by being provided with: a probe set 2 to be in contact with end portions of a plurality of wiring paths 31-34 formed on a substrate 1; a flexible conductor 9 that short-circuits the wiring paths 31-34 at portions excluding the end portions; and an inspection device 4 which is provided with a determination section 8 that determines whether a resistance value between a pair of wiring lines is lower than a predetermined value, said pair of wiring lines having been selected from among the wiring lines 31-34 short-circuited by the flexible conductor 9.

Abstract: Disclosed is a plasma processing apparatus including: a processing container into which an electromagnetic wave for plasma excitation is supplied; a placing table provided inside the processing container and configured to place a workpiece thereon; a first coupling member inserted into each of a plurality of insertion portions formed in a part of a dielectric member that transmits the electromagnetic wave, among a plurality of members that constitute the placing table, and configured to couple the dielectric member and a member to be coupled; and a dielectric cap fitted to each of the plurality of insertion portions so as to cover the first coupling member and having a dielectric constant substantially equal to the dielectric constant of the dielectric member.

Abstract: A carriage according to the present embodiment comprises: a mounting base in which a plane for placing a freight is defined, the mounting base receiving the freight from an end part of the plane by horizontal movement; and a drop prevention part that is provided to the end part of the plane, and that prevents the freight from dropping off from the mounting base. The drop prevention part includes: a movable part that rotates about an axis along a direction perpendicular to both the vertical direction and a direction in which the freight is received; and a rotation inhibiting part that is provided between said plane and a horizontal plane on which said axis is present, and that limits the range of rotation of the movable part. The movable part includes: a contact part that comes into contact with the freight; and a weight part at which the center of gravity of the movable part is located. The contact part has an end part that projects more upward in the vertical direction than the plane.

Abstract: A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered on a predetermined center frequency; a plasma generating unit configured to generate plasma by using the carrier wave group; a spectrum detecting unit configured to detect a progressive wave spectrum and a reflection wave spectrum of the carrier wave group; and a control unit configured to calculate, by using the progressive wave spectrum and the reflection wave spectrum, an absorption power which is a power of the carrier wave group absorbed into the plasma, and configured to adjust a parameter, which varies a minimum value of the reflection wave spectrum and a frequency corresponding to the minimum value, such that the absorption power becomes equal to or larger than a threshold value.

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

Abstract: Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 ?m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 ?/sq or less.

Abstract: In one exemplary embodiment, a second waveguide is connected to an upper wall of a first waveguide and communicates with the first waveguide, a dielectric window is in contact with a lower wall of the first waveguide, a first inner conductor penetrates an upper wall, is electrically connected with the upper wall, and extends along the direction of a tube axis from an inside of the first waveguide to an inside of a third waveguide, the third waveguide is connected to the lower wall on the dielectric window side and communicates with the first waveguide, a first opening end of the third waveguide is connected to the dielectric window, and a drive device is connected to the first inner conductor, and is configured to drive the first inner conductor in the direction of the tube axis.

Abstract: An antenna according to an aspect includes: a dielectric window having a first surface and a second surface, the second surface having an annular recessed surface and a flat surface surrounded by the recessed surface; a slot plate; a dielectric plate; a heat transfer member made of metal and having an upper surface and a lower surface opposing each other; a cooling jacket; and a heater, in which the upper surface includes a plurality of first regions and a second region, the cooling jacket is mounted on the plurality of first regions, the second region is recessed further toward the lower surface side than the plurality of first regions, the heater is mounted on the second region, and each of the plurality of first regions is provided at a position at least partially overlapping with the flat surface when viewed in a direction parallel to a central axis.

Abstract: An antenna device according to an exemplary embodiment radiates electromagnetic waves. In the antenna device, a dielectric window is in contact with a lower wall of a first waveguide, the first waveguide is provided between the dielectric window and a second waveguide and extends in a direction crossing a tube axis of the second waveguide, a dispersion part in the first waveguide disperses the electromagnetic waves in the first waveguide, two inner conductors disposed at different distances from the tube axis and connected to the dielectric window include coaxial conversion parts which cause propagation of the electromagnetic waves dispersed by the dispersion part to direct to the dielectric window side, a body length of the inner conductor most distant from the tube axis, out of body lengths of the two inner conductors, is longer, and a front surface of the dielectric window does not have irregularities.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

Abstract: An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.

Abstract: A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

Abstract: A lens barrel in which an air flow path that causes an external space and an internal space to communicate is formed includes an aperture unit disposed in the internal space and configured to rotate a plurality of vane members within a predetermined range to form a predetermined opening, an optical unit disposed in the internal space and located on an object side with respect to the aperture unit, and a through-hole formed in the aperture unit and communicating with the internal space. When at least one of the optical unit and the aperture unit moves in an optical axis direction, the lens barrel discharges, through the air flow path and the through-hole, air in the internal space and static electricity charged in the plurality of vane members included in the air in the internal space.

Abstract: An antenna device according to an exemplary embodiment radiates electromagnetic waves. In the antenna device, a dielectric window is in contact with a lower wall of a first waveguide, the first waveguide is provided between the dielectric window and a second waveguide and extends in a direction crossing a tube axis of the second waveguide, a dispersion part in the first waveguide disperses the electromagnetic waves in the first waveguide, two inner conductors disposed at different distances from the tube axis and connected to the dielectric window include coaxial conversion parts which cause propagation of the electromagnetic waves dispersed by the dispersion part to direct to the dielectric window side, a body length of the inner conductor most distant from the tube axis, out of body lengths of the two inner conductors, is longer, and a front surface of the dielectric window does not have irregularities.

Abstract: A pulse wave measurement device including: a belt to be worn around a measurement target site; first and second pulse wave sensors that are mounted on the belt spaced from each other with respect to a width direction of the belt, and that detect pulse waves of opposing portions of an artery passing through the measurement target site; a pressing unit that is mounted on the belt is capable of changing pressing forces of the pulse wave sensors against the measurement target site; a waveform comparing unit that acquires pulse wave signals which are time-sequentially output by the pulse wave sensors respectively, and compares waveforms of the pulse wave signals; and a pulse wave sensor pressing force setting unit that variably sets the pressing forces by the pressing unit such that the waveforms of the pulse wave signals compared by the waveform comparing unit become identical to each other.

Abstract: A belt to be mounted around a measurement site; first pulse wave sensor and second pulse wave sensor mounted on the belt, separated from each other, configured to detect pulse waves in an artery passing through the measurement site; and pressing member mounted on the belt, capable of pressing first pulse wave sensor and second pulse wave sensor against the measurement site while varying pressing force. Time difference between first and second pulse wave signals is acquired as pulse transit time. Blood pressure is calculated based on the pulse transit time acquired by the measurement processing unit by using a predetermined correspondence equation between pulse transit time and blood pressure. Pulse transit time is acquired with the measurement processing unit while pressing force by pressing member is changed in resting state, and corresponding equation is calibrated based on plurality of pulse transit times corresponding to plurality of respective pressing forces.

Abstract: A pulse wave measurement device includes: a belt to be attached around a measurement site; first and second pulse wave sensors which are mounted on the belt in a state of being spaced apart from each other in a width direction of the belt and detect pulse waves at portions of an artery passing through the measurement site, the portions individually facing the first and second pulse wave sensors; and a pressing member capable of pressing the first and second pulse wave sensors against the measurement site while varying a pressing force. First and second pulse wave signals which the first and second pulse wave sensors output respectively in a time series are acquired, and a cross-correlation coefficient between waveforms of the first and second pulse wave signals is calculated.

Abstract: A plasma processing apparatus includes: a processing container which defines a processing space; a microwave generator; a dielectric having an opposing surface which faces the processing space; a slot plate formed with a plurality of slots; and a heating member provided within the slot plate. The slot plate is provided on a surface of the dielectric at an opposite side to the opposing surface to radiate microwaves for plasma excitation to the processing space through the dielectric based on the microwaves generated by the microwave generator.