Patents by Inventor Naoki Mukouyama

Naoki Mukouyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080102316
    Abstract: A magnetic read head has a first free-magnetic layer, a second free-magnetic layer, a non-magnetic layer provided between the first free-magnetic layer and the second free-magnetic layer, and a bias applying layer for applying a bias magnetic field in the vertical direction to the medium facing plane of the first free-magnetic layer and the second free-magnetic layer. Shape anisotropies of magnetization of the first free-magnetic layer and the second free-magnetic layer are inclined in the opposite direction with each other for the medium facing plane within film surfaces of respective free-magnetic layers. The first free-magnetic layer and the second free-magnetic layer are overlapped at the medium facing plane in the vertical direction at the surfaces of respective free-magnetic layer films, and the bias applying layer is located on the opposite plane to the medium facing plane of the first free-magnetic layer and the second free-magnetic layer.
    Type: Application
    Filed: October 26, 2007
    Publication date: May 1, 2008
    Applicant: Fujitsu Limited
    Inventors: Hideyuki Akimoto, Jun Masuko, Naoki Mukouyama
  • Patent number: 6462918
    Abstract: The present invention is to provide a magnetoresistance effect type head which well generates the information stored in a memory device at high memory density while limiting the generation of Barkhausen noises. The magnetoresistance effect type head comprises a magnetoresistance effect element which contains a free magnetic layer having an overhang portion which is overhung and spread in left and right directions and is changed in resistance by a change in the azimuth of the magnetization of the free magnetic layer, and paired upper and lower magnetic wall control layers which are in contact with the upper and under surfaces of the left and right overhang portions of the free magnetic layer respectively and restrict the movement of the magnetic wall of the free magnetic layer.
    Type: Grant
    Filed: September 25, 2001
    Date of Patent: October 8, 2002
    Assignee: Fujitsu Limited
    Inventor: Naoki Mukouyama
  • Publication number: 20020012208
    Abstract: The present invention is to provide a magnetoresistance effect type head which well generates the information stored in a memory device at high memory density while limiting the generation of Barkhausen noises. The magnetoresistance effect type head comprises a magnetoresistance effect element which contains a free magnetic layer having an overhang portion which is overhung and spread in left and right directions and is changed in resistance by a change in the azimuth of the magnetization of the free magnetic layer, and paired upper and lower magnetic wall control layers which are in contact with the upper and under surfaces of the left and right overhang portions of the free magnetic layer respectively and restrict the movement of the magnetic wall of the free magnetic layer.
    Type: Application
    Filed: September 25, 2001
    Publication date: January 31, 2002
    Applicant: FUJITSU LIMITED
    Inventor: Naoki Mukouyama