Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: To more reliably suppress deterioration in characteristics due to signals (distortions) other than input and output waves while suppressing manufacturing cost. A semiconductor device according to the present disclosure includes a circuit substrate including an insulating film layer located above a predetermined semiconductor substrate and a semiconductor layer located above the insulating film layer, a plurality of passive elements provided on the circuit substrate and electrically connected with one another, and an electromagnetic shield layer locally provided in the insulating film layer corresponding to a portion where at least one of the plurality of passive elements is provided, and the electromagnetic shield layer and the semiconductor substrate are electrically separated from each other.

Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a first substrate including a sensor pixel that performs photoelectric conversion; a second substrate including a pixel circuit that outputs a pixel signal on a basis of electric charges outputted from the sensor pixel; and a third substrate including a processing circuit that performs signal processing on the pixel signal. The first substrate, the second substrate, and the third substrate are stacked in this order, and a concentration of electrically-conductive type impurities in a region on side of the first substrate is higher than a concentration of electrically-conductive type impurities in a region on side of the third substrate, in at least one or more semiconductor layers in which a field-effect transistor of the pixel circuit is provided.

Abstract: An imaging device according to an embodiment of the present disclosure includes: a first substrate; a second substrate; and a through wiring line. The first substrate includes a photoelectric conversion section and a first transistor in a first semiconductor substrate. The photoelectric conversion section and the first transistor are included in a sensor pixel. The second substrate is stacked on the first substrate and includes a second transistor and an opening that extends through a second semiconductor substrate. The second substrate has an adjuster on at least one of a side surface of the opening near a gate of the second transistor or a region of a surface opposed to the first transistor. The second transistor is included in the sensor pixel. The adjuster adjusts a threshold voltage of the second transistor. The through wiring line is in the opening and electrically couples the first substrate and the second substrate.

Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: The present technology relates to a solid-state imaging apparatus and electronic equipment capable of coping with fluctuations in characteristics depending on the direction of current flow. There is provided a solid-state imaging apparatus including: a pixel array unit that includes pixels having a photoelectric conversion unit and arranged in a two-dimensional form, in which a transistor of the pixel has a structure in which an amount of overlap to an underside of a gate by a source-side LDD region differs from an amount of overlap to the underside of the gate by a drain-side LDD region, and a junction depth of the source-side LDD region differs from a junction depth of the drain-side LDD region. The present technology may be applied, for example, to a CMOS image sensor.

Abstract: The present technology relates to a solid-state imaging apparatus and electronic equipment capable of coping with fluctuations in characteristics depending on the direction of current flow. There is provided a solid-state imaging apparatus including: a pixel array unit that includes pixels having a photoelectric conversion unit and arranged in a two-dimensional form, in which a transistor of the pixel has a structure in which an amount of overlap to an underside of a gate by a source-side LDD region differs from an amount of overlap to the underside of the gate by a drain-side LDD region, and a junction depth of the source-side LDD region differs from a junction depth of the drain-side LDD region. The present technology may be applied, for example, to a CMOS image sensor.

Abstract: A semiconductor device in which the generation of a distortion of a signal is suppressed, and a method for manufacturing the semiconductor device, are disclosed. The semiconductor device includes a transistor region in which a field effect transistor is provided; and an interconnection region in which a metal layer electrically connected to the field effect transistor is provided. The interconnection region includes an insulating layer provided between the metal layer and a substrate, and a low-permittivity layer provided in the insulating layer below the metal layer and having a lower permittivity than the insulating layer.

Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: A semiconductor device in which the generation of a distortion of a signal is suppressed, and a method for manufacturing the semiconductor device are disclosed. The semiconductor device includes a transistor region in which a field effect transistor is provided; and an interconnection region in which a metal layer electrically connected to the field effect transistor is provided. The interconnection region includes an insulating layer provided between the metal layer and a substrate, and a low-permittivity layer provided in the insulating layer below the metal layer and having a lower permittivity than the insulating layer.

Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: To more reliably suppress deterioration in characteristics due to signals (distortions) other than input and output waves while suppressing manufacturing cost. A semiconductor device according to the present disclosure includes a circuit substrate including an insulating film layer located above a predetermined semiconductor substrate and a semiconductor layer located above the insulating film layer, a plurality of passive elements provided on the circuit substrate and electrically connected with one another, and an electromagnetic shield layer locally provided in the insulating film layer corresponding to a portion where at least one of the plurality of passive elements is provided, and the electromagnetic shield layer and the semiconductor substrate are electrically separated from each other.

Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: A semiconductor device in which the generation of a distortion of a signal is suppressed, and a method for manufacturing the semiconductor device are disclosed. The semiconductor device includes a transistor region in which a field effect transistor is provided; and an interconnection region in which a metal layer electrically connected to the field effect transistor is provided. The interconnection region includes an insulating layer provided between the metal layer and a substrate, and a low-permittivity layer provided in the insulating layer below the metal layer and having a lower permittivity than the insulating layer.

Abstract: There is provided a field-effect transistor including: a gate electrode; a semiconductor layer having a source region and a drain region with the gate electrode in between; contact plugs provided on the source region and the drain region; first metals stacked on the contact plugs; and a low-dielectric constant region provided in a region between the first metals along an in-plane direction of the semiconductor layer and provided at least in a first region below bottom surfaces of the first metals along a stacking direction.

Abstract: A method for manufacturing a wavelength conversion member includes: forming a phosphor layer on a base body including phosphor particles and oxide particles affixed to surfaces of the phosphor particles; and forming a cover layer covering the surfaces of the phosphor particles and surfaces of the oxide particles continuously, and having a same oxide material as the oxide particles. A wavelength conversion member includes: a base body, a phosphor layer disposed on the base body and including phosphor particles and oxide particles affixed to surfaces of the phosphor particles; and a cover layer covering the surfaces of the phosphor particles and surfaces of the oxide particles continuously, and including a same oxide material as the oxide particles.

Abstract: A wavelength converting member includes at least a first, second, and third regions, circumferentially on a disc-shaped light-transmissive substrate. The first region includes, from a light incident direction, a first and second phosphor layers. The first phosphor layer includes a first phosphor to absorb at least part of incident light and to emit a first light having a wavelength different from the incident light. The first phosphor layer defines an indentation in a surface on the second phosphor layer side, with a depth a half or more of the thickness of a portion of the first phosphor layer absent of the indentation. The second phosphor layer includes a second phosphor to absorb at least part of the first light emitted by the first phosphor and to emit a second light having a wavelength different from the first light, and is disposed in the indentation of the first phosphor layer.