Abstract: An environmental condition storage device is usable to store an environmental condition. The environmental condition storage device includes an environmental condition acquisition unit, a tactile information acquisition unit, and a storage unite. The environmental condition acquisition unit acquires an environmental condition including at least one of a temperature, humidity, wind, a picture, an image, and a sound. The tactile information acquisition unit acquires tactile information indicating a tactile sensation. The storage unit stores the environmental condition and the tactile information in association with each other.

Abstract: A cluster classification device includes an environmental condition acquisition unit, a classification unit, and a storage unit. The environmental condition acquisition unit acquires an environmental condition in order to generate a specific environment in a target space. The classification unit generates a cluster from a plurality of environmental conditions acquired by the environmental condition acquisition unit, based on features of the environmental conditions. The storage unit stores the cluster and a feature of the cluster in association with each other. An environment generation device generates, using an environmental condition classified by the cluster classification device, a predetermined environment in the target space. An environment generation system includes the cluster classification device and a control device that controls an environment generation device that generates a specific environment in the target space.

Abstract: An environmental condition storage device is usable to store an environmental condition. The environmental condition storage device includes an environmental condition acquisition unit, a tactile information acquisition unit, and a storage unite. The environmental condition acquisition unit acquires an environmental condition including at least one of a temperature, humidity, wind, a picture, an image, and a sound. The tactile information acquisition unit acquires tactile information indicating a tactile sensation. The storage unit stores the environmental condition and the tactile information in association with each other.

Abstract: A cluster classification device includes an environmental condition acquisition unit, a classification unit, and a storage unit. The environmental condition acquisition unit acquires an environmental condition in order to generate a specific environment in a target space. The classification unit generates a cluster from a plurality of environmental conditions acquired by the environmental condition acquisition unit, based on features of the environmental conditions. The storage unit stores the cluster and a feature of the cluster in association with each other. An environment generation device generates, using an environmental condition classified by the cluster classification device, a predetermined environment in the target space. An environment generation system includes the cluster classification device and a control device that controls an environment generation device that generates a specific environment in the target space.

Abstract: Extraction means configured to extract a blood vessel region from medical image data, detection means configured to perform evaluation regarding the shape or signal value distribution information in the periphery of a blood vessel including blood vessel contour points and the margin of blood vessel contour points in the blood vessel region extracted by the extraction means and detecting an abnormal portion on the basis of the evaluation result, and display means configured to display information regarding the abnormal portion detected by the detection means are provided.

Abstract: Extraction means configured to extract a blood vessel region from medical image data, detection means configured to perform evaluation regarding the shape or signal value distribution information in the periphery of a blood vessel including blood vessel contour points and the margin of blood vessel contour points in the blood vessel region extracted by the extraction means and detecting an abnormal portion on the basis of the evaluation result, and display means configured to display information regarding the abnormal portion detected by the detection means are provided.

Abstract: The storage case has a structure in which a sample storage case (S) contained in a storage case is cooled and held at a low temperature by a Stirling refrigerator. A detection element is disposed in a room-temperature area of the storage case. The chemical or physical property of the detection element varies when a contaminant adheres to the detection element. Entrance of a contaminant into the storage case can be checked by contactlessly checking the detection element from the outside of the storage case. The storage case includes a server for receiving the result of the check from the detection device, storing the result, and setting up connection via a communication line to at least two out of a terminal operable by the forwarder, a terminal operable by the carrier, and a terminal operable by the recipient to transmit the result to the two.

Abstract: In a semiconductor device having memory cells and peripheral circuits, the memory cells and the peripheral circuits are formed on a semiconductor substrate. Source regions, drain regions and gate electrodes of MOS transistors in the peripheral circuits are comprised of a refractory metallic silicide layer. Gate electrodes of MOS transistors in the memory cells are comprised of the refractory metallic silicide. Source and drain regions of the MOS transistors in the memory cells are not comprised of the refractory metallic silicide layer.

Abstract: In a semiconductor device having memory cells and peripheral circuits, the memory cells and the peripheral circuits are formed on a semiconductor substrate. Source regions, drain regions and gate electrodes of MOS transistors in the peripheral circuits are comprised of a refractory metallic silicide layer. Gate electrodes of MOS transistors in the memory cells are comprised of the refractory metallic silicide. Source and drain regions of the MOS transistors in the memory cells are not comprised of the refractory metallic silicide layer.

Abstract: In a semiconductor device having memory cells and peripheral circuits, the memory cells and the peripheral circuits are formed on a semiconductor substrate. Source regions, drain regions and gate electrodes of MOS transistors in the peripheral circuits are comprised of a refractory metallic silicide layer. Gate electrodes of MOS transistors in the memory cells are comprised of the refractory metallic silicide. Source and drain regions of the MOS transistors in the memory cells are not comprised of the refractory metallic silicide layer.

Abstract: In a semiconductor device having memory cells and peripheral circuits, the memory cells and the peripheral circuits are formed on a semiconductor substrate. Source regions, drain regions and gate electrodes of MOS transistors in the peripheral circuits are comprised of a refractory metallic silicide layer. Gate electrodes of MOS transistors in the memory cells are comprised of the refractory metallic silicide. Source and drain regions of the MOS transistors in the memory cells are not comprised of the refractory metallic silicide layer.

Abstract: In a semiconductor device having memory cells and peripheral circuits, the memory cells and the peripheral circuits are formed on a semiconductor substrate. Source regions, drain regions and gate electrodes of MOS transistors in the peripheral circuits are comprised of a refractory metallic silicide layer. Gate electrodes of MOS transistors in the memory cells are comprised of the refractory metallic silicide. Source and drain regions of the MOS transistors in the memory cells are not comprised of the refractory metallic silicide layer.

Abstract: In a semiconductor device having memory cells and peripheral circuits, the memory cells and the peripheral circuits are formed on a semiconductor substrate. Source regions, drain regions and gate electrodes of MOS transistors in the peripheral circuits are comprised of a refractory metallic silicide layer. Gate electrodes of MOS transistors in the memory cells are comprised of the refractory metallic silicide. Source and drain regions of the MOS transistors in the memory cells are not comprised of the refractory metallic silicide layer.

Abstract: In a semiconductor device having memory cells and peripheral circuits, the memory cells and the peripheral circuits are formed on a semiconductor substrate. Source regions, drain regions and gate electrodes of MOS transistors in the peripheral circuits are comprised of a refractory metallic silicide layer. Gate electrodes of MOS transistors in the memory cells are comprised of the refractory metallic silicide. Source and drain regions of the MOS transistors in the memory cells are not comprised of the refractory metallic suicide layer.