Patents by Inventor Naomi Anzue
Naomi Anzue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 10198622Abstract: An electronic mirror device 100 according to an aspect of the present disclosure displays a user's facial mirror image, and can shift, according to the user's facial orientation or line of sight, the location where the facial image is displayed to a location where he or she can view his or her own facial image easily. The electronic mirror device 100 according to an aspect of the present disclosure includes an image capturing section 102 which captures the user's facial image, an image data generating section 120 which outputs image data representing the user's facial mirror image based on image data representing the user's facial image that has been captured, a display section 103 which displays the image data representing the user's facial mirror image, and a display location shifting section 130 which shifts a location where the mirror image is displayed on the display section.Type: GrantFiled: March 26, 2014Date of Patent: February 5, 2019Assignee: Panasonic Intellectual Property Management Co., Ltd.Inventors: Naomi Anzue, Norihiro Imamura, Michihiro Yamagata, Yoshimitsu Noguchi
-
Patent number: 9992409Abstract: Provided is a digital mirror apparatus including: a camera that captures an image of a user; a display having a display surface located at a position that allows the user to visually identify the display; a controller; a memory; and a control panel operable by the user, wherein the controller: horizontally flips a live image of the user that is being captured by the camera to generate a mirror image; reads a reference image to be compared with the mirror image; superimposes the reference image on the mirror image to display on the display a display image in a region of the display in which the reference image and the mirror image overlap one another; and stores one frame of the live image in the memory, based on an operation performed on the control panel by the user while the display image is displayed on the display.Type: GrantFiled: February 14, 2014Date of Patent: June 5, 2018Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.Inventors: Naomi Anzue, Michihiro Yamagata, Norihiro Imamura, Yoshimitsu Noguchi
-
Publication number: 20150373264Abstract: Provided is a digital mirror apparatus including: a camera that captures an image of a user; a display having a display surface located at a position that allows the user to visually identify the display; a controller; a memory; and a control panel operable by the user, wherein the controller: horizontally flips a live image of the user that is being captured by the camera to generate a mirror image; reads a reference image to be compared with the mirror image; superimposes the reference image on the mirror image to display on the display a display image in a region of the display in which the reference image and the mirror image overlap one another; and stores one frame of the live image in the memory, based on an operation performed on the control panel by the user while the display image is displayed on the display.Type: ApplicationFiled: February 14, 2014Publication date: December 24, 2015Inventors: Naomi ANZUE, Michihiro YAMAGATA, Norihiro IMAMURA, Yoshimitsu NOGUCHI
-
Publication number: 20150318445Abstract: A nitride-based semiconductor light-emitting device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region having an m-plane as a growing plane; and an Ag electrode provided so as to be in contact with the growing plane of the p-type semiconductor region, wherein the Ag electrode has a thickness in a range of not less than 200 nm and not more than 1,000 nm; an integral intensity ratio of an X-ray intensity of a (111) plane on the growing plane of the Ag electrode to that of a (200) plane is in a range of not less than 20 and not more than 100; and the Ag electrode has a reflectance of not less than 70%.Type: ApplicationFiled: July 16, 2015Publication date: November 5, 2015Inventors: Songbaek CHOE, Naomi ANZUE, Ryou KATO, Toshiya YOKOGAWA
-
Publication number: 20150154439Abstract: An electronic mirror device 100 according to an aspect of the present disclosure displays a user's facial mirror image, and can shift, according to the user's facial orientation or line of sight, the location where the facial image is displayed to a location where he or she can view his or her own facial image easily. The electronic mirror device 100 according to an aspect of the present disclosure includes an image capturing section 102 which captures the user's facial image, an image data generating section 120 which outputs image data representing the user's facial mirror image based on image data representing the user's facial image that has been captured, a display section 103 which displays the image data representing the user's facial mirror image, and a display location shifting section 130 which shifts a location where the mirror image is displayed on the display section.Type: ApplicationFiled: March 26, 2014Publication date: June 4, 2015Inventors: Naomi Anzue, Norihiro Imamura, Michihiro Yamagata, Yoshimitsu Noguchi
-
Patent number: 8895419Abstract: This nitride-based semiconductor light-emitting element includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, the nitride-based semiconductor multilayer structure having a growing plane which is an m-plane; and an electrode which is arranged on an AldGaeN layer. The AldGaeN layer is formed of a GaN-based semiconductor. The electrode includes Ag as the principal component and also includes Ge and at least one of Mg and Zn.Type: GrantFiled: November 1, 2013Date of Patent: November 25, 2014Assignee: Panasonic CorporationInventors: Naomi Anzue, Toshiya Yokogawa
-
Patent number: 8890175Abstract: A nitride-based semiconductor element according to an embodiment of the present disclosure includes: a p-type contact layer, of which the growing plane is an m plane; and an electrode which is arranged on the growing plane of the p-type contact layer. The p-type contact layer is a GaN-based semiconductor layer which has a thickness of 26 nm to 60 nm and which includes oxygen at a concentration that is equal to or higher than Mg concentration of the p-type contact layer. In the p-type contact layer, the number of Ga vacancies is larger than the number of N vacancies.Type: GrantFiled: March 13, 2013Date of Patent: November 18, 2014Assignee: Panasonic CorporationInventors: Toshiya Yokogawa, Naomi Anzue, Akira Inoue, Ryou Kato
-
Publication number: 20140057380Abstract: A nitride-based semiconductor device includes a p-type AldGaeN layer 25 whose growing plane is an m-plane and an electrode 30 provided on the p-type AldGaeN layer 25. The AldGaeN layer 25 includes a p-AldGaeN contact layer 26 that is made of an AlxGayInzN (x+y+z=1, x?0, y>0, z?0) semiconductor, which has a thickness of not less than 26 nm and not more than 60 nm. The p-AldGaeN contact layer 26 includes a body region 26A which contains Mg of not less than 4×1019 cm?3 and not more than 2×1020 cm?3 and a high concentration region 26B which is in contact with the electrode 30 and which has a Mg concentration of not less than 1×1021 cm?3.Type: ApplicationFiled: November 1, 2013Publication date: February 27, 2014Applicant: Panasonic CorporationInventors: Toshiya YOKOGAWA, Ryou KATO, Naomi ANZUE
-
Publication number: 20140054636Abstract: This nitride-based semiconductor light-emitting element includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, the nitride-based semiconductor multilayer structure having a growing plane which is an m-plane; and an electrode which is arranged on an AldGaeN layer. The AldGaeN layer is formed of a GaN-based semiconductor. The electrode includes Ag as the principal component and also includes Ge and at least one of Mg and Zn.Type: ApplicationFiled: November 1, 2013Publication date: February 27, 2014Applicant: Panasonic CorporationInventors: Naomi ANZUE, Toshiya YOKOGAWA
-
Patent number: 8647907Abstract: A method includes the step of preparing a GaN-based substrate 10, the step of forming on the substrate a nitride-based semiconductor multilayer structure including a p-type AldGaeN layer (p-type semiconductor region) 26, the p-type AldGaeN layer 26 being made of an AlxInyGazN semiconductor (x+y+z=1, x?0, y?0, z?0), and a principal surface of the p-type AldGaeN layer 26 being an m-plane, the step of forming a metal layer 28 which contains at least one of Mg and Zn on the principal surface of the p-type AldGaeN layer 26 and performing a heat treatment, the step of removing the metal layer 28, and the step of forming a p-type electrode on the principal surface of the p-type AldGaeN layer 26, wherein the heat treatment causes a N concentration to be higher than a Ga concentration in the p-type AldGaeN layer 26.Type: GrantFiled: October 18, 2012Date of Patent: February 11, 2014Assignee: Panasonic CorporationInventors: Naomi Anzue, Toshiya Yokogawa
-
Patent number: 8604591Abstract: A nitride-based semiconductor device includes a p-type AldGaeN layer 25 whose growing plane is an m-plane and an electrode 30 provided on the p-type AldGaeN layer 25. The AldGaeN layer 25 includes a p-AldGaeN contact layer 26 that is made of an AlxGayInzN (x+y+z=1, x?0, y>0, z?0) semiconductor, which has a thickness of not less than 26 nm and not more than 60 nm. The p-AldGaeN contact layer 26 includes a body region 26A which contains Mg of not less than 4×1019 cm?3 and not more than 2×1020 cm?3 and a high concentration region 26B which is in contact with the electrode 30 and which has a Mg concentration of not less than 1×1021 cm?3.Type: GrantFiled: March 6, 2012Date of Patent: December 10, 2013Assignee: Panasonic CorporationInventors: Toshiya Yokogawa, Ryou Kato, Naomi Anzue
-
Publication number: 20130270574Abstract: A nitride-based semiconductor element according to an embodiment of the present disclosure includes: a p-type contact layer, of which the growing plane is an m plane; and an electrode which is arranged on the growing plane of the p-type contact layer. The p-type contact layer is a GaN-based semiconductor layer which has a thickness of 26 nm to 60 nm and which includes oxygen at a concentration that is equal to or higher than Mg concentration of the p-type contact layer. In the p-type contact layer, the number of Ga vacancies is larger than the number of N vacancies.Type: ApplicationFiled: March 13, 2013Publication date: October 17, 2013Inventors: Toshiya YOKOGAWA, Naomi ANZUE, Akira INOUE, Ryou KATO
-
Publication number: 20120267664Abstract: A method for fabricating a nitride-based semiconductor light-emitting device includes a step (a) of forming a nitride-based semiconductor multi-layer structure (20) including a p-type AldGaeN layer (25) having an m-plane as a growing plane, and a step (b) of forming an Ag electrode (30) so as to be in contact with a growing plane (13) of the p-type AldGaeN layer (25). The step (b) includes a step (b1) of forming the Ag electrode (30) having a thickness in the range of 200 nm or more to 1,000 nm or less, and a step (b2) of heating the Ag electrode (30) to a temperature in the range of 400° C. or more to 600° C. or less.Type: ApplicationFiled: April 11, 2012Publication date: October 25, 2012Applicant: PANASONIC CORPORATIONInventors: Songbaek CHOE, Naomi ANZUE, Ryou KATO, Toshiya YOKOGAWA
-
Patent number: 8222670Abstract: A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.Type: GrantFiled: May 17, 2011Date of Patent: July 17, 2012Assignee: Panasonic CorporationInventors: Naomi Anzue, Gaku Sugahara, Yoshiaki Hasegawa, Akihiko Ishibashi, Toshiya Yokogawa
-
Publication number: 20120168811Abstract: A nitride-based semiconductor device includes a p-type AldGaeN layer 25 whose growing plane is an m-plane and an electrode 30 provided on the p-type AldGaeN layer 25. The AldGaeN layer 25 includes a p-AldGaeN contact layer 26 that is made of an AlxGayInzN (x+y+z=1, x?0, y>0, z?0) semiconductor, which has a thickness of not less than 26 nm and not more than 60 nm. The p-AldGaeN contact layer 26 includes a body region 26A which contains Mg of not less than 4×1019 cm?3 and not more than 2×1020 cm?3 and a high concentration region 26B which is in contact with the electrode 30 and which has a Mg concentration of not less than 1×1021 cm?3.Type: ApplicationFiled: March 6, 2012Publication date: July 5, 2012Applicant: PANASONIC CORPORATIONInventors: Toshiya YOKOGAWA, Ryou KATO, Naomi ANZUE
-
Patent number: 8124986Abstract: A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane; and an electrode that is arranged on the p-type semiconductor region, wherein the p-type semiconductor region is made of an AlxGayInzN semiconductor (where x+y+z=1, x?0, y?0, and z?0), and the electrode contains Mg, Zn and Ag.Type: GrantFiled: September 21, 2010Date of Patent: February 28, 2012Assignee: Panasonic CorporationInventors: Naomi Anzue, Toshiya Yokogawa
-
Patent number: 8093685Abstract: A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substrate 1 having an upper face and a lower face and a semiconductor multilayer structure 40 supported by the upper face of the substrate 1, such that the substrate 1 and the semiconductor multilayer structure 40 have at least two cleavage planes. At least one cleavage inducing member 3 which is in contact with either one of the two cleavage planes is provided, and a size of the cleavage inducing member 3 along a direction parallel to the cleavage plane is smaller than a size of the upper face of the substrate 1 along the direction parallel to the cleavage plane.Type: GrantFiled: October 13, 2005Date of Patent: January 10, 2012Assignee: Panasonic CorporationInventors: Naomi Anzue, Toshiya Yokogawa, Yoshiaki Hasegawa
-
Publication number: 20110304025Abstract: A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substrate 1 having an upper face and a lower face and a semiconductor multilayer structure 40 supported by the upper face of the substrate 1, such that the substrate 1 and the semiconductor multilayer structure 40 have at least two cleavage planes. At least one cleavage inducing member 3 which is in contact with either one of the two cleavage planes is provided, and a size of the cleavage inducing member 3 along a direction parallel to the cleavage plane is smaller than a size of the upper face of the substrate 1 along the direction parallel to the cleavage plane.Type: ApplicationFiled: August 19, 2011Publication date: December 15, 2011Applicant: PANASONIC CORPORATIONInventors: Naomi ANZUE, Toshiya YOKOGAWA, Yoshiaki HASEGAWA
-
Publication number: 20110266575Abstract: A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane; and an electrode that is arranged on the p-type semiconductor region, wherein the p-type semiconductor region is made of an AlxGayInzN semiconductor (where x+y+z=1, x?0, y?0, and z?0), and the electrode contains Mg, Zn and Ag.Type: ApplicationFiled: September 21, 2010Publication date: November 3, 2011Inventors: Naomi Anzue, Toshiya Yokogawa
-
Patent number: 8030677Abstract: A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.Type: GrantFiled: July 13, 2007Date of Patent: October 4, 2011Assignee: Panasonic CorporationInventors: Naomi Anzue, Gaku Sugahara, Yoshiaki Hasegawa, Akihiko Ishibashi, Toshiya Yokogawa