Abstract: There is provided herein, the use of mammalian derived HLA class I molecule for in vitro peptide exchange. For example, there is provided a method of producing an HLA class I molecule complexed to a pre-selected peptide comprising: (a) providing a mammalian derived HLA class I molecule complexed to an existing peptide; (b) incubating, in vitro, the HLA class I molecule complexed to the existing peptide with the pre-selected peptide, wherein the pre-selected peptide is at a concentration sufficient to replace the existing peptide to produce the HLA class I molecule complexed to the pre-selected peptide; and the HLA class I molecule comprises a1, a1, a2, a3 and ?2m domains.

Abstract: Disclosed herein are chimeric antigen receptors (CARs) comprising an intracellular segment comprising an interleukin receptor chain, a JAK-binding motif, a Signal Transducer and Activator of Transcription (STAT) 5 association motif and/or a CD3? intracellular signaling domain comprising an exogenous STAT3 association motif, as well as cells and 5 compositions comprising said CARs and uses thereof.

Abstract: Disclosed herein are chimeric antigen receptors (CARs) comprising an intracellular segment comprising an interleukin receptor chain, a JAK-binding motif, a Signal Transducer and Activator of Transcription (STAT) 5 association motif and/or a CD3? intracellular signaling domain comprising an exogenous STAT3 association motif, as well as cells and 5 compositions comprising said CARs and uses thereof.

Abstract: Provided is a method for determining a TCR polypeptide chain that can form a TCR specific for a peptide of interest. Also provided are methods and compositions for producing a cell expressing a T cell receptor (TCR) specific for a peptide of interest, methods and compositions for producing a TCR chain nucleic acid and/or pair of TCR chain polypeptides and/or nucleic acids encoding a TCR, a cell population comprising the cell harboring the nucleic acids encoding a TCR obtained by said method, and a method for treating a disorder comprising administering to the subject said cell population.

Abstract: A semiconductor wafer for an epitaxial growth is disclosed comprising: a main face on which a vapor phase epitaxial layer grows; a back face provided on an opposite side of the wafer; a main chamfered part along a circumferential edge where the main face and a side face of the wafer meet; and a back chamfered part along a circumferential edge where the back face and the side face meet is provided. After a CVD layer formation process is conducted to form a layer at least on the back face and the back chamfered part, a machining process is conducted on the main face to remove a CVD layer at least partially formed thereon so as to polish the main face to a mirror finished surface with a maximum height of profile (Rz) not exceeding 0.3 ?m.

Abstract: The invention relates to antigen-presenting cells having specificity against a selected antigen and methods for making the cells. The invention also relates to a method of selecting efficient antigen-presenting cells using reporter fusion constructs. The highly efficient antigen-presenting cells of the invention will provide a therapeutic strategy of modulating immune responses for a variety of diseases.

Abstract: Ribs for defining pixel cells are formed in the shape of a lattice, and sustain electrodes and scan electrodes are disposed near the ribs. The electrodes are spaced apart in each pixel cell, and the sustain electrode and the scan electrode are each cut away between pixel cells arranged in the row direction to provide each pixel cell with individually separated electrodes. In addition, between pixel cells adjacent to each other in the row direction, the sustain electrodes and the scan electrodes are connected to each other by means of a sustain-side bus electrode and a scan-side bus electrode, respectively. This makes it possible to provide a high luminous efficiency. Furthermore, each pixel cell is provided with a wide distance between the electrodes and thereby with a large effective opening portion. Thus, this provides only a small amount of reduction in intensity when the electrodes are spaced apart between the pixel cells arranged in the row direction in order to increase the luminous efficiency.

Abstract: A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.

Abstract: A semiconductor wafer for an epitaxial growth is disclosed comprising: a main face on which a vapor phase epitaxial layer grows; a back face provided on an opposite side of the wafer; a main chamfered part along a circumferential edge where the main face and a side face of the wafer meet; and a back chamfered part along a circumferential edge where the back face and the side face meet is provided. After a CVD layer formation process is conducted to form a layer at least on the back face and the back chamfered part, a machining process is conducted on the main face to remove a CVD layer at least partially formed thereon so as to polish the main face to a mirror finished surface with a maximum height of profile (Rz) not exceeding 0.3 ?m.

Abstract: Ribs for defining pixel cells are formed in the shape of a lattice, and sustain electrodes and scan electrodes are disposed near the ribs. The electrodes are spaced apart in each pixel cell, and the sustain electrode and the scan electrode are each cut away between pixel cells arranged in the row direction to provide each pixel cell with individually separated electrodes. In addition, between pixel cells adjacent to each other in the row direction, the sustain electrodes and the scan electrodes are connected to each other by means of a sustain-side bus electrode and a scan-side bus electrode, respectively. This makes it possible to provide a high luminous efficiency. Furthermore, each pixel cell is provided with a wide distance between the electrodes and thereby with a large effective opening portion. Thus, this provides only a small amount of reduction in intensity when the electrodes are spaced apart between the pixel cells arranged in the row direction in order to increase the luminous efficiency.

Abstract: Disclosed herein are a process for producing mixed crystals of disodium 5?-guanylate and disodium 5?-inosinate which comprises precipitating mixed crystals of disodium 5?-guanylate and disodium 5?-inosinate (I+G mixed crystals) by adding an aqueous mixed solution of disodium 5?-guanylate and disodium 5?-inosinate and a hydrophilic organic solvent at the same time into a crystallization vessel in such manner that the ratio of the hydrophilic organic solvent to the liquid phase in the crystallization vessel is maintained in a range of 30 to 70 vol %, as well as such process for producing I+G mixed crystals wherein said producing of I+G mixed crystals is carried out by seeding crystallization wherein crystals of 5?-IMP2Na or/and I+G mixed crystals are used as seed crystals.

Abstract: A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.

Abstract: Ribs for defining pixel cells are formed in the shape of a lattice, and sustain electrodes and scan electrodes are disposed near the ribs. The electrodes are spaced apart in each pixel cell, and the sustain electrode and the scan electrode are each cut away between pixel cells arranged in the row direction to provide each pixel cell with individually separated electrodes. In addition, between pixel cells adjacent to each other in the row direction, the sustain electrodes and the scan electrodes are connected to each other by means of a sustain-side bus electrode and a scan-side bus electrode, respectively. This makes it possible to provide a high luminous efficiency. Furthermore, each pixel cell is provided with a wide distance between the electrodes and thereby with a large effective opening portion. Thus, this provides only a small amount of reduction in intensity when the electrodes are spaced apart between the pixel cells arranged in the row direction in order to increase the luminous efficiency.

Abstract: A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switched from the fluorine-based gas to a chlorine-based gas at a point of time when a lower oxide film as an underlying film of the semiconductor film is exposed. As the fluorine-based gas, a mixed gas of CF4 and O2 is used, and suitably, a gas ratio of CF4 and O2 in the mixture gas is set at 1:1, and the dry etching is performed therefor. By this etching, a side face of a two-layer structure of the semiconductor film and upper oxide film is optimally tapered, and a crack or a disconnection is prevented from being occurring in a film crossing over the two-layer structure.

Abstract: A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.

Abstract: To provide a liquid crystal display device in which capacity value of storage capacitance is large and manufacturing cost is low, and a manufacturing method thereof. A plurality of gate lines is provided on a pixel circuit substrate of a liquid crystal display device. Further, a TFT is provided to each pixel, and a drain line is connected with the drain, and a pixel electrode is connected with the source, and the gate line is connected with the gate electrode. Lower electrodes are made to extend from the gate line. In an area immediately above the lower electrodes connected with the nth gate line from the drain line control circuit side, a pixel electrode coupled to the (n+1)th gate line via the TFT is disposed. Thereby, storage capacitance is formed between the lower electrodes connected with the nth gate line and the pixel electrode coupled to the (n+1)th gate line.

Abstract: Ribs for defining pixel cells are formed in the shape of a lattice, and sustain electrodes and scan electrodes are disposed near the ribs. The electrodes are spaced apart in each pixel cell, and the sustain electrode and the scan electrode are each cut away between pixel cells arranged in the row direction to provide each pixel cell with individually separated electrodes. In addition, between pixel cells adjacent to each other in the row direction, the sustain electrodes and the scan electrodes are connected to each other by means of a sustain-side bus electrode and a scan-side bus electrode, respectively. This makes it possible to provide a high luminous efficiency.

Abstract: Ribs for defining pixel cells are formed in the shape of a lattice, and sustain electrodes and scan electrodes are disposed near the ribs. The electrodes are spaced apart in each pixel cell, and the sustain electrode and the scan electrode are each cut away between pixel cells arranged in the row direction to provide each pixel cell with individually separated electrodes. In addition, between pixel cells adjacent to each other in the row direction, the sustain electrodes and the scan electrodes are connected to each other by means of a sustain-side bus electrode and a scan-side bus electrode, respectively. This makes it possible to provide a high luminous efficiency. Furthermore, each pixel cell is provided with a wide distance between the electrodes and thereby with a large effective opening portion. Thus, this provides only a small amount of reduction in intensity when the electrodes are spaced apart between the pixel cells arranged in the row direction in order to increase the luminous efficiency.

Abstract: A semiconductor film serving as an active region of a thin film transistor and an upper oxide film protecting the semiconductor film are dry etched to form the active region. In this case, a fluorine-based gas is used as the etching gas, and the etching gas is switched from the fluorine-based gas to a chlorine-based gas at a point of time when a lower oxide film as an underlying film of the semiconductor film is exposed. As the fluorine-based gas, a mixed gas of CF4 and O2 is used, and suitably, a gas ratio of CF4 and O2 in the mixture gas is set at 1:1, and the dry etching is performed therefor. By this etching, a side face of a two-layer structure of the semiconductor film and upper oxide film is optimally tapered, and a crack or a disconnection is prevented from being occurring in a film crossing over the two-layer structure.

Abstract: A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.