Patent number: 8674388
Abstract: The present invention is a phosphor expressed by the general formula (A1?xRxM2X)m(M2X4)n (wherein the element A is one or more types of element selected from Li, Na, Be, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, and Lu, the element R is one or more types of activating agent selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb, the element M is one or more types of element selected from Si, Ge, Sn, Ti, Hf, Zr, Be, B, Al, Ga, In, Tl, and Zn, the element X is one or more types of element selected from oxygen and nitrogen, n and m are integers of 1 or more, and x is a real number defined by 0<x<1), as well as a manufacturing method for the same, and a light-emitting device that uses this phosphor.
Type:
Grant
Filed:
August 4, 2010
Date of Patent:
March 18, 2014
Assignee:
National Institute for Materials Science
Inventors:
Kousuke Shioi, Naoto Hirosaki, Yuichi Michiue
Publication number: 20140028180
Abstract: A phosphor with a high light-emitting intensity and indicated by general formula MeaRebSicAldNeOf. Me has Sr as an essential element thereof and can include one or more types of CC element selected from Na, Li, Mg, Ca, Ba, Sc, Y, and La. Re has Eu as an essential element thereof and can include one or more types of element selected from Mn, Ce, Tb, Yb, and Sm. When composition ratios a, b, c, d, e, and f fulfill a=1?x, b=x, c=(2+2p)×(1?y), d=(2+2p)×y, e=(1+4p)×(1?z), and f=(1+4p)×z, parameters p, x, y, and z fulfill the following: 1.630<p<1.650, 0.005<x<0.300, 0.180<y<0.220, and 0.060<z<0.100. A light-emitting device with high luminance is provided by using this phosphor.
Type:
Application
Filed:
February 3, 2012
Publication date:
January 30, 2014
Applicants:
DENKI KAGAKU KOGYO KABUSHIKI KAISHA, NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventors:
Naoto Hirosaki, Ryo Yoshimatsu, Shintaro Watanabe
Patent number: 8508119
Abstract: An incandescent lamp color light emitting diode lamp comprises a semiconductor blue light emitting diode chip having a center emission wavelength in a range of from 400 nm to 480 nm and a phosphor that absorbs light emitted from the diode chip to emit light having a different wavelength than the light emitted from the diode chip. The phosphor is represented by a general formula of Mp(Si, Al)12(O, N)16:Eu2+q. The main phase is an ?-SiAlON phosphor having an ? SiAlON structure, wherein M is at least one element of Ca, Y, Mg, Li, Sc, Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Sr and p is from 0.75 to 1.0; and q is between 0.02 and 0.09. The diode lamp emits light having an emission color produced by a mixture of the light emitted from the semiconductor blue light emitting and the light emitted from the ?-SiAlON. The chromaticity range thereof falls within the range defined by chromaticity coordinates (x, y) of (0.4775, 0.4283), (0.4594, 0.3971), (0.4348, 0.4185), and (0.4214, 0.
Type:
Grant
Filed:
July 12, 2005
Date of Patent:
August 13, 2013
Assignees:
Fujikura Ltd., National Institute for Materials Science
Inventors:
Ken Sakuma, Koji Omichi, Naoki Kimura, Masakazu Ohashi, Daiichiro Tanaka, Naoto Hirosaki
Patent number: 8436525
Abstract: A light emitting element includes a light-emitting source for emitting light at a wavelength of 330 to 500 nm and a constituent phosphor. The constituent phosphor includes a compound including M, A, Al, O, and N, where M is at least one kind of element selected from Mn, Ce, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb, and A is at least one kind of element selected from C, Si, Ge, Sn, B, Ga, In, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, Lu, Ti, Zr, Hf, Ta, and W.
Type:
Grant
Filed:
October 12, 2011
Date of Patent:
May 7, 2013
Assignee:
National Institute for Materials Science
Inventor:
Naoto Hirosaki
Patent number: 8398892
Abstract: The invention is a phosphor which includes a phosphor material having a composition represented by a general formula: M(0)aM(1)bM(2)x?(vm+n)M(3)(vm+n)?yOnNz?n, wherein M(0) is one or more elements selected from Li, Na, Be, Mg, Ca, Sr, Ba, Sc, Y, La, Gd and Lu; M(1) is one or more activators selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb; M(2) is one or more elements selected from Si, Ge, Sn, Ti, Hf and Zr; M(3) is one or more elements selected from Be, B, Al, Ga, In, Tl and Zn; O is oxygen; N is nitrogen; and an atomic ratio of M(0), M(1), M(2), M(3), O and N is adjusted to satisfy the following: x, y and z satisfy 33?x?51, 8?y?12 and 36?z?56; a and b satisfy 3?a+b?7 and 0.001?b?1.2; m and n satisfy 0.8·me?m?1.2·me and 0?n?7 in which me=a+b; and v satisfies v={a·v(0)+b·v(1)}/(a+b) (wherein v(0) is a valence of M(0) ion and v(1) is a valence of M(1) ion). The invention also relates to a method for producing the phosphor and a light-emitting device using the phosphor.
Type:
Grant
Filed:
September 1, 2008
Date of Patent:
March 19, 2013
Assignees:
Showa Denko K.K., National Institute For Materials Science
Inventors:
Kousuke Shioi, Naoto Hirosaki, Hisayuki Miki