Abstract: A display device capable of improving image quality is provided. A storage node is provided in each pixel and first data can be held in the storage node. Second data is added to the first data by capacitive coupling, which can be supplied to a display element. Thus, the display device can display a corrected image. A reference potential for the capacitive coupling operation is supplied from a power supply line or the like, and thus the first data and the second data can be supplied from a common signal line.

Abstract: A display device capable of improving image quality is provided. The display device includes a plurality of capacitors, a plurality of transistors, and a display element in a pixel. The plurality of capacitors are connected in series through a wiring, and one of the plurality of transistors is electrically connected to one electrode of the plurality of capacitors connected in series, the other electrode thereof, and the wiring. The display element can operate in accordance with the sum of a plurality of pieces of input data, so that image correction such as image upconversion, HDR display, or improvement in the luminance can be performed.

Abstract: A display device capable of improving image quality is provided. A display device includes a plurality of pixel blocks in a display region. The pixel blocks each include a first circuit and a plurality of second circuits. The first circuit has a function of adding a plurality of pieces of data supplied from a source driver. The second circuit includes a display element and has a function of performing display in accordance with the added data. One pixel has a configuration including one second circuit and an component of the first circuit that is shared. When the first circuit is shared by a plurality of pixels, the aperture ratio can be increased.

Abstract: A semiconductor device capable of retaining a signal sensed by a sensor element is provided. The semiconductor device includes a sensor element, a first transistor, a second transistor, and a third transistor. One electrode of the sensor element is electrically connected to a first gate. The first gate is electrically connected to one of a source and a drain of the third transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor. A semiconductor layer includes a metal oxide.

Abstract: An imaging device capable of executing image processing is provided. A structure is employed in which a photoelectric conversion element, a first transistor, a second transistor, and an inverter circuit are included; one electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor; the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor; the one of the source and the drain of the second transistor is electrically connected to an input terminal of the inverter circuit; and data obtained by photoelectric conversion is binarized and output.

Abstract: An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.

Abstract: A display device includes a first region and a second region adjacent to the first region. A display element included in the first region has a function of reflecting visible light and a function of emitting visible light. A display element included in the second region has a function of emitting visible light. In an electronic device including the display device, the first region is located on a first surface (e.g., top surface) on which a main image is displayed, and the second region is located on a second surface (e.g., side surface) on which an auxiliary image is displayed.

Abstract: An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

Abstract: An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A node AN (a first charge retention portion), a node FD (a second charge retention portion), and a node FDX (the charge detection portion) are provided. Imaging data obtained in the node AN is transferred to the node FD, and the imaging data is sequentially transferred from the node FD to the node FDX to be read.

Abstract: An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A node AN (a first charge retention portion), a node FD (a second charge retention portion), and a node FDX (the charge detection portion) are provided. Imaging data obtained in the node AN is transferred to the node FD, and the imaging data is sequentially transferred from the node FD to the node FDX to be read.

Abstract: An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.

Abstract: An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A node AN (a first charge retention portion), a node FD (a second charge retention portion), and a node FDX (the charge detection portion) are provided. Imaging data obtained in the node AN is transferred to the node FD, and the imaging data is sequentially transferred from the node FD to the node FDX to be read.

Abstract: A display device capable of improving the image quality is provided. The display device includes a pixel in which a first node, a second node, a third node, and a display element are provided, and the same image data is written to the first node and the second node first. Then, at the same time when the image data is read from the second node to the third node, the image data is added to the image data in the first node by capacitive coupling. This operation enables a data potential higher than or equal to the output voltage of a source driver to be supplied to the display element.

Abstract: A transistor excellent in electrical characteristics and a method for manufacturing the transistor are provided. The transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel formation region over an insulating surface; a gate insulating film over the oxide semiconductor layer; a gate electrode overlapping with the channel formation region, over the gate insulating film; a source electrode in contact with the source region; and a drain electrode in contact with the drain region. The source region and the drain region include a portion having higher oxygen concentration than the channel formation region.

Abstract: A laser processing apparatus and a stack processing apparatus are provided. The laser processing apparatus can perform steps selectively by switching of optical paths. The steps are a step in which a first surface of a flat-plate structure is irradiated with a laser and a step in which a surface opposite to the first surface of the structure is irradiated with the laser. The laser is a linear laser whose shape on the irradiated surface is a rectangle. By laser irradiation performed while the structure is moved in the horizontal direction, the whole or a desired region of the first surface or the opposite surface of the structure can be processed.

Abstract: A display device capable of improving image quality is provided. The display device includes a first circuit, a pixel, and a wiring. The first circuit has a function of supplying data to the wiring and a function of making the wiring floating to hold the data. The pixel has a function of taking in the data twice from the wiring and performing addition. The pixel can perform the first writing of the data in a period during which the data is supplied to the wiring, and can perform the second writing of the data in a period during which the data is held in the wiring. Therefore, by one time of data charging to a source line, a data potential larger than or equal to an output voltage of a source driver can be supplied to a display element.

Abstract: A display device capable of improving image quality is provided. The display device includes a plurality of capacitors, a plurality of transistors, and a display element in a pixel. The plurality of capacitors are connected in series through a wiring, and one of the plurality of transistors is electrically connected to one electrode of the plurality of capacitors connected in series, the other electrode thereof, and the wiring. The display element can operate in accordance with the sum of a plurality of pieces of input data, so that image correction such as image upconversion, HDR display, or improvement in the luminance can be performed.

Abstract: A laser processing apparatus and a stack processing apparatus are provided. The laser processing apparatus can perform steps selectively by switching of optical paths. The steps are a step in which a first surface of a flat-plate structure is irradiated with a laser and a step in which a surface opposite to the first surface of the structure is irradiated with the laser. The laser is a linear laser whose shape on the irradiated surface is a rectangle. By laser irradiation performed while the structure is moved in the horizontal direction, the whole or a desired region of the first surface or the opposite surface of the structure can be processed.

Abstract: A display device capable of improving image quality with low power consumption is provided. A storage node is provided in each pixel and a first signal can be held in the storage node. A second signal is added to the first signal by capacitive coupling to generate a third signal. A display element operates in response to the third signal. Thus, regardless of the output voltage of a driver that supplies data, a high voltage can be supplied to the display element. Consequently, even a display element that requires a relatively high voltage for operation can operate with low power consumption.

Abstract: A display device capable of performing proper display without image signal conversion is provided. In the case of high-resolution display, individual data is supplied to each pixel through a first signal line and a first transistor included in each pixel. In the case of low-resolution display, the same data is supplied to a plurality of pixels through a second signal line and a second transistor electrically connected to the plurality of pixels. When the number of image signals to be displayed is more than one and the image signals support different resolutions, display can be performed without up conversion or down conversion by switching an image signal supply path as described above.