Patents by Inventor Naoto Yamade

Naoto Yamade has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180261633
    Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
    Type: Application
    Filed: March 5, 2018
    Publication date: September 13, 2018
    Inventors: Junichi KOEZUKA, Naoto YAMADE, Yuhei SATO, Yutaka OKAZAKI, Shunpei YAMAZAKI
  • Publication number: 20180197997
    Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.
    Type: Application
    Filed: January 8, 2018
    Publication date: July 12, 2018
    Inventors: Daigo ITO, Daisuke Matsubayashi, Masaharu Nagai, Yoshiaki Yamamoto, Takashi Hamada, Yutaka Okazaki, Shinya Sasagawa, Motomu Kurata, Naoto Yamade
  • Patent number: 9960280
    Abstract: A transistor with stable electric characteristics is provided. An aluminum oxide film containing boron is formed in order to prevent hydrogen from diffusing into an oxide semiconductor film.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: May 1, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuichi Sato, Naoto Yamade
  • Publication number: 20180108647
    Abstract: A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.
    Type: Application
    Filed: October 5, 2017
    Publication date: April 19, 2018
    Inventors: Naoki OKUNO, Kosei NEI, Hiroaki HONDA, Naoto YAMADE, Hiroshi FUJIKI
  • Publication number: 20180102420
    Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
    Type: Application
    Filed: October 2, 2017
    Publication date: April 12, 2018
    Inventors: Yoshinori ANDO, Hidekazu MIYAIRI, Naoto YAMADE, Asako HIGA, Miki SUZUKI, Yoshinori IEDA, Yasutaka SUZUKI, Kosei NEI, Shunpei YAMAZAKI
  • Patent number: 9911767
    Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: March 6, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Naoto Yamade, Yuhei Sato, Yutaka Okazaki, Shunpei Yamazaki
  • Patent number: 9871145
    Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.
    Type: Grant
    Filed: June 21, 2017
    Date of Patent: January 16, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daigo Ito, Daisuke Matsubayashi, Masaharu Nagai, Yoshiaki Yamamoto, Takashi Hamada, Yutaka Okazaki, Shinya Sasagawa, Motomu Kurata, Naoto Yamade
  • Publication number: 20170288064
    Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.
    Type: Application
    Filed: June 21, 2017
    Publication date: October 5, 2017
    Inventors: Daigo ITO, Daisuke MATSUBAYASHI, Masaharu NAGAI, Yoshiaki YAMAMOTO, Takashi HAMADA, Yutaka OKAZAKI, Shinya SASAGAWA, Motomu KURATA, Naoto YAMADE
  • Patent number: 9780201
    Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: October 3, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshinori Ando, Hidekazu Miyairi, Naoto Yamade, Asako Higa, Miki Suzuki, Yoshinori Ieda, Yasutaka Suzuki, Kosei Nei, Shunpei Yamazaki
  • Patent number: 9698274
    Abstract: A transistor with stable electrical characteristics or a transistor with normally-off electrical characteristics. The transistor is a semiconductor device including a conductor, a semiconductor, a first insulator, and a second insulator. The semiconductor is over the first insulator. The conductor is over the semiconductor. The second insulator is between the conductor and the semiconductor. The first insulator includes fluorine and hydrogen. The fluorine concentration of the first insulator is higher than the hydrogen concentration of the first insulator.
    Type: Grant
    Filed: October 15, 2015
    Date of Patent: July 4, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yasumasa Yamane, Naoto Yamade, Tetsuhiro Tanaka
  • Patent number: 9691905
    Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.
    Type: Grant
    Filed: June 15, 2016
    Date of Patent: June 27, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daigo Ito, Daisuke Matsubayashi, Masaharu Nagai, Yoshiaki Yamamoto, Takashi Hamada, Yutaka Okazaki, Shinya Sasagawa, Motomu Kurata, Naoto Yamade
  • Publication number: 20170117305
    Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
    Type: Application
    Filed: January 5, 2017
    Publication date: April 27, 2017
    Inventors: Junichi KOEZUKA, Naoto YAMADE, Yuhei SATO, Yutaka OKAZAKI, Shunpei YAMAZAKI
  • Publication number: 20170018655
    Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.
    Type: Application
    Filed: July 7, 2016
    Publication date: January 19, 2017
    Inventors: Yutaka OKAZAKI, Akihisa SHIMOMURA, Naoto YAMADE, Tomoya TAKESHITA, Tetsuhiro TANAKA
  • Patent number: 9543145
    Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
    Type: Grant
    Filed: February 18, 2016
    Date of Patent: January 10, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Naoto Yamade, Yuhei Sato, Yutaka Okazaki, Shunpei Yamazaki
  • Publication number: 20160372606
    Abstract: A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor layer over the first metal oxide layer, a second metal oxide layer over the oxide semiconductor layer, a gate insulating layer over the second metal oxide layer, a second insulating layer over the second metal oxide layer, and a gate electrode layer over the gate insulating layer. The gate insulating layer includes a region in contact with a side surface of the gate electrode layer. The second insulating layer includes a region in contact with the gate insulating layer. The oxide semiconductor layer includes first to third regions. The first region includes a region overlapping with the gate electrode layer. The second region, which is between the first and third regions, includes a region overlapping with the gate insulating layer or the second insulating layer.
    Type: Application
    Filed: June 15, 2016
    Publication date: December 22, 2016
    Inventors: Daigo ITO, Daisuke MATSUBAYASHI, Masaharu NAGAI, Yoshiaki YAMAMOTO, Takashi HAMADA, Yutaka OKAZAKI, Shinya SASAGAWA, Motomu KURATA, Naoto YAMADE
  • Publication number: 20160336433
    Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
    Type: Application
    Filed: July 29, 2016
    Publication date: November 17, 2016
    Inventors: Yoshinori ANDO, Hidekazu MIYAIRI, Naoto YAMADE, Asako HIGA, Miki SUZUKI, Yoshinori IEDA, Yasutaka SUZUKI, Kosei NEI, Shunpei YAMAZAKI
  • Patent number: 9450080
    Abstract: The semiconductor device is manufactured by the following method. A first oxide semiconductor film is formed over a first gate electrode and a first insulating film, oxygen is added to the first oxide semiconductor film, and then a second oxide semiconductor film is formed over the first oxide semiconductor film. Then, heat treatment is performed. Next, part of the first insulating film, part of the first oxide semiconductor film, and part of the second oxide semiconductor film are etched to form a first gate insulating film having a projection. Next, a pair of electrodes is formed over the second oxide semiconductor film, and a third oxide semiconductor film is formed over the second oxide semiconductor film and the pair of electrodes. Then, a second gate insulating film is formed over the third oxide semiconductor film, and a second gate electrode is formed over the second gate insulating film.
    Type: Grant
    Filed: December 15, 2014
    Date of Patent: September 20, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Naoto Yamade, Yoshitaka Yamamoto, Hideomi Suzawa, Masayuki Sakakura, Yuhei Sato, Yasumasa Yamane
  • Patent number: 9431435
    Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
    Type: Grant
    Filed: October 21, 2014
    Date of Patent: August 30, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yoshinori Ando, Hidekazu Miyairi, Naoto Yamade, Asako Higa, Miki Suzuki, Yoshinori Ieda, Yasutaka Suzuki, Kosei Nei, Shunpei Yamazaki
  • Publication number: 20160163544
    Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
    Type: Application
    Filed: February 18, 2016
    Publication date: June 9, 2016
    Inventors: Junichi KOEZUKA, Naoto YAMADE, Yuhei SATO, Yutaka OKAZAKI, Shunpei YAMAZAKI
  • Publication number: 20160111547
    Abstract: A transistor with stable electrical characteristics or a transistor with normally-off electrical characteristics. The transistor is a semiconductor device including a conductor, a semiconductor, a first insulator, and a second insulator. The semiconductor is over the first insulator. The conductor is over the semiconductor. The second insulator is between the conductor and the semiconductor. The first insulator includes fluorine and hydrogen. The fluorine concentration of the first insulator is higher than the hydrogen concentration of the first insulator.
    Type: Application
    Filed: October 15, 2015
    Publication date: April 21, 2016
    Inventors: Shunpei YAMAZAKI, Akihisa SHIMOMURA, Yasumasa YAMANE, Naoto YAMADE, Tetsuhiro TANAKA