Patents by Inventor Naoya Okamoto

Naoya Okamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170222033
    Abstract: A method of producing a semiconductor device includes forming an insulating film on a substrate on which a semiconductor layer is formed; removing a part of the insulating film by etching to form an opening in the insulating film; supplying steam with a temperature greater than or equal to 200° C. and less than or equal to 600° C. to the opening formed in the insulating film; after supplying the steam, applying a solution including a silicon compound to a side surface of the insulating film defining the opening; and forming a hydrophobic film on the side surface of the insulating film defining the opening by polymerizing the silicon compound.
    Type: Application
    Filed: April 13, 2017
    Publication date: August 3, 2017
    Applicant: FUJITSU LIMITED
    Inventors: Shirou OZAKI, Naoya OKAMOTO
  • Patent number: 9673377
    Abstract: A compound semiconductor device includes: a flexible part; a first nitride semiconductor layer above a surface of the flexible part, the first nitride semiconductor layer including a first polar plane and a second polar plane intersecting the surface; a second nitride semiconductor layer in contact with the first nitride semiconductor layer on the first polar plane, a lattice constant of the second nitride semiconductor layer being different from that of the first nitride semiconductor layer; a third nitride semiconductor layer in contact with the first nitride semiconductor layer on the second polar plane, a lattice constant of the third nitride semiconductor layer being different from that of the first nitride semiconductor layer; a first ohmic electrode above an interface between the first nitride semiconductor layer and the second nitride semiconductor layer; and a second ohmic electrode above an interface between the first nitride semiconductor layer and the third nitride semiconductor layer.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: June 6, 2017
    Assignee: FUJITSU LIMITED
    Inventor: Naoya Okamoto
  • Patent number: 9660065
    Abstract: A method of producing a semiconductor device includes forming an insulating film on a substrate on which a semiconductor layer is formed; removing a part of the insulating film by etching to form an opening in the insulating film; supplying steam with a temperature greater than or equal to 200° C. and less than or equal to 600° C. to the opening formed in the insulating film; after supplying the steam, applying a solution including a silicon compound to a side surface or the insulating film defining the opening; and forming a hydrophobic film on the side surface of the insulating film defining the opening by polymerizing the silicon compound.
    Type: Grant
    Filed: October 14, 2014
    Date of Patent: May 23, 2017
    Assignee: FUJITSU LIMITED
    Inventors: Shirou Ozaki, Naoya Okamoto
  • Patent number: 9656822
    Abstract: A support device for supporting a cylindrical member around which is wound an elongated body has: a support shaft for supporting the cylindrical member that is fitted to an external surface of the support shaft from an opening on one end in a longitudinal direction of the cylindrical member; an anchoring plates, built into the support shaft, for anchoring the cylindrical member from an inner circumferential side of the cylindrical member; and an operating means having an operation shaft of a smaller diameter than the support shaft, the operation shaft protruding forward from a distal end of the support shaft in order to operate the anchoring plates. Further, the support device has a protecting member which is attached to the distal end of the support shaft and through which is inserted the operation shaft. The protecting member further has a reduced-diameter section smaller in diameter than the support shaft.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: May 23, 2017
    Assignee: LINTEC CORPORATION
    Inventors: Kaori Matsushita, Kazuhisa Yamaguchi, Kenichi Watanabe, Naoya Okamoto
  • Patent number: 9647084
    Abstract: A semiconductor device includes: a first electrode; a second electrode; an interlayer insulating film made of a porous insulating material and formed above the first electrode and the second electrode; and connection parts electrically connected to the first electrode and the second electrode respectively, wherein a cavity is formed between the interlayer insulating film and a surface of the first electrode, a surface of the second electrode, and parts of surfaces of the connection parts.
    Type: Grant
    Filed: December 11, 2015
    Date of Patent: May 9, 2017
    Assignee: FUJITSU LIMITED
    Inventors: Shirou Ozaki, Naoya Okamoto, Kozo Makiyama, Toshihiro Ohki
  • Publication number: 20170125569
    Abstract: A semiconductor device includes a semiconductor stacked structure in which a semiconductor layer including an electron supply layer and an electron transit layer is stacked, and a gate electrode contacting with the semiconductor layer included in the semiconductor stacked structure or an insulating layer. The portion of the gate electrode contacting with the semiconductor layer or the insulating layer is an oxide of a metal configuring the portion of the gate electrode contacting with the semiconductor layer or the insulating layer.
    Type: Application
    Filed: October 20, 2016
    Publication date: May 4, 2017
    Applicant: FUJITSU LIMITED
    Inventors: Shirou OZAKI, Kozo Makiyama, NAOYA OKAMOTO
  • Publication number: 20170103295
    Abstract: A support device, which supports a belt-shaped sheet wound around a hollow cylindrical shaft core so as to feed the belt-shaped sheet, includes a support shaft that is insertable into a hollow part of the shaft core, a frame that supports the support shaft, an antenna surface perpendicular to an axis line of the support shaft, and a loop antenna provided to the antenna surface. The shaft core includes a non-contact data carrier capable of at least one of storing and transmitting predetermined data. The loop antenna includes a loop unit coiled to define a loop surrounding the axis line. When the shaft core is seen through the loop antenna along the axis line, the loop unit is disposed in the vicinity of the shaft core.
    Type: Application
    Filed: March 18, 2015
    Publication date: April 13, 2017
    Inventors: Kaori MATSUSHITA, Katsumi KATAKURA, Masayuki NARUKAWA, Kenichi WATANABE, Naoya OKAMOTO
  • Patent number: 9611811
    Abstract: The influenced of condensed water on an EGR device is alleviated. A device (100) that controls a cooling system including adjusting means for being able to adjust a circulation amount of coolant in a first flow passage, including an engine cooling flow passage, an EGR cooling flow passage and a radiator flow passage, and a second flow passage, including the engine cooling flow passage, the EGR cooling flow passage and a bypass flow passage and not including the radiator flow passage, includes: measuring means for measuring a temperature of the coolant; limiting means for limiting circulation of the coolant at starting an internal combustion engine; and control means for circulating the coolant preferentially through the second flow passage via control over the adjusting means based on the measured temperature in a period in which circulation of the coolant is limited.
    Type: Grant
    Filed: December 19, 2011
    Date of Patent: April 4, 2017
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventors: Nobumoto Ohashi, Taro Aoyama, Naoya Okamoto, Yoshio Yamashita, Yuki Haba, Hajime Takagawa, Koki Uno, Naoki Takeuchi, Masashi Shinoda, Teruhiko Miyake, Koji Nakayama
  • Publication number: 20170089758
    Abstract: Light emitted from a light source is irradiated to a reflective light modulator which modulates irradiated light to reflect based on image data and the light reflected by the light modulator is projected. A ratio of return light returning from the light modulator to the light source to the light irradiated to the light modulator is calculated based on the image data. A light amount of the light emitted from the light source is calculated by using the calculated ratio and a detection output of an optical sensor provided between the light source and the light modulator.
    Type: Application
    Filed: July 14, 2016
    Publication date: March 30, 2017
    Inventors: Naoya Okamoto, Naoya Aizu
  • Publication number: 20170053990
    Abstract: A semiconductor device includes: a semiconductor layer; a first insulating film which covers a surface of the semiconductor layer; a first adhering film which is formed on a surface of the first insulating film and contains a carbonyl group; and a second insulating film which covers a surface of the first adhering film and has a lower dielectric constant than the first insulating film.
    Type: Application
    Filed: August 15, 2016
    Publication date: February 23, 2017
    Applicant: FUJITSU LIMITED
    Inventors: Shirou OZAKI, NAOYA OKAMOTO
  • Patent number: 9553152
    Abstract: A semiconductor device includes: a first semiconductor layer which is formed over a substrate and is formed from a nitride semiconductor; a second semiconductor layer which is formed over the first semiconductor layer and is formed from a nitride semiconductor; a third semiconductor layer which is formed over the second semiconductor layer and is formed from a nitride semiconductor; a source electrode and a drain electrode which are formed over the third semiconductor layer; an opening which is formed in the second semiconductor layer and the third semiconductor layer between the source electrode and the drain electrode; an insulating layer which is formed on a side surface and a bottom surface of the opening; and a gate electrode which is formed in the opening through the insulating layer.
    Type: Grant
    Filed: December 4, 2014
    Date of Patent: January 24, 2017
    Assignee: FUJITSU LIMITED
    Inventors: Toshihiro Ohki, Lei Zhu, Naoya Okamoto, Yuichi Minoura, Shirou Ozaki
  • Publication number: 20170002471
    Abstract: A photosynthesis apparatus includes a groove part formed in a semiconductor substrate; a first conductive type area formed on one side surface of the groove part; a second conductive type area formed on another side surface of the groove part; an oxidation electrode formed in contact with the first conductive type area on the one side surface; a reduction electrode formed in contact with the second conductive type area on the other side surface; and a proton diaphragm formed at a center part of the groove part. Water including carbon dioxide is supplied to the groove part, and light is radiated to the oxidation electrode or the reduction electrode to generate oxygen and a hydrogen ion from the water at the oxidation electrode, and the generated hydrogen ion penetrates the proton diaphragm and reacts with the carbon dioxide to generate formic acid at the reduction electrode.
    Type: Application
    Filed: September 14, 2016
    Publication date: January 5, 2017
    Applicant: FUJITSU LIMITED
    Inventor: NAOYA OKAMOTO
  • Publication number: 20170003752
    Abstract: Provided is an information processing apparatus including: a point cloud generation unit configured to generate a point cloud from a range image representing a range equivalent to a distance from a display screen to an object; and a position determination unit configured to perform a principal component analysis on the generated point cloud, to detect a vector corresponding to an object relating to position specification based on an analysis result obtained by the analysis, and to determine a specified position, the specified position being specified on the display screen.
    Type: Application
    Filed: November 28, 2014
    Publication date: January 5, 2017
    Inventors: KATSUTOSHI ISHIWATA, SATOSHI SUZUKI, NAOYA OKAMOTO
  • Publication number: 20170002863
    Abstract: A squeeze film damper includes a bearing housing as an inner ring disposed around a radially outer side of a bearing which rotatably supports a rotary shaft, an outer ring disposed around a radially outer side of the bearing housing, a squeeze film formed by circulating a viscous fluid through a clearance in a radial direction between the bearing housing and the outer ring, and a coupling pin which couples the bearing housing and the outer ring to each other and is deformable in response to relative displacement in the radial direction between the outer ring and the bearing housing. The coupling pin has stiffness that is higher in a vertical direction than in a horizontal direction in a cross section perpendicular to an axial direction of the rotary shaft.
    Type: Application
    Filed: December 2, 2014
    Publication date: January 5, 2017
    Inventors: Rimpei KAWASHITA, Kenichi FUJIKAWA, Hideaki SUGISHITA, Naoya OKAMOTO, Nobuhiro NAGATA
  • Publication number: 20160348555
    Abstract: A aqueous urea solution supply device for an engine is provided with a tank that stores aqueous urea solution, a valve configured to add the aqueous urea solution to exhaust gas, and a passage configured to supply the aqueous urea solution in the tank to the valve. When a pressure of the aqueous urea solution supplied to the valve is equal to or lower than a predetermined pressure and the amount of the aqueous urea solution in the tank is equal to or smaller than a predetermined threshold, an electronic control unit determines that the aqueous urea solution in an amount required for cooling of the valve cannot be supplied from the tank to the valve and executes a return control for returning the aqueous urea solution in the valve to the tank.
    Type: Application
    Filed: May 25, 2016
    Publication date: December 1, 2016
    Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, KABUSHIKI KAISHA TOYOTA JIDOSHOKKI
    Inventors: Tomihisa TSUCHIYA, Naoya OKAMOTO, Takahiro KIYOFUJI, Sakutaro HOSHI
  • Patent number: 9497432
    Abstract: A multi-projector system includes two or more projection devices including a first projection device and a second projection device, an image output device configured to output an image to each of the two or more projection devices, and an adjustment device configured to adjust projection positions of projection images on a medium to be projected, the projection images being projected by the two or more projection devices, and a first projection image emitted by the first projection device, and a second projection image emitted by the second projection device being projected on the medium to be projected to have an overlapped region.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: November 15, 2016
    Assignee: JVC KENWOOD Corporation
    Inventor: Naoya Okamoto
  • Publication number: 20160261802
    Abstract: In a display device including a camera section and a monitor, imaging range information indicating an imaging range for the imaging device is acquired. Subsequently, a display target area corresponding to the imaging range indicated by the imaging range information is set in an image captured by the camera section. Then, a partial image in the display target area in the image captured by the camera section is displayed on the monitor. As a result, live view display can be achieved without causing the imaging device to capture a photographic subject at a predetermined frame rate and transmit the captured image.
    Type: Application
    Filed: February 5, 2016
    Publication date: September 8, 2016
    Applicant: CASIO COMPUTER CO., LTD.
    Inventor: Naoya OKAMOTO
  • Patent number: 9437672
    Abstract: A semiconductor device includes: a first semiconductor layer of a nitride semiconductor formed on a substrate; a second semiconductor layer of a nitride semiconductor formed on the first semiconductor layer; and a gate electrode, a source electrode, a drain electrode, and a hole extraction electrode, each of which is formed on the second semiconductor layer, wherein between the source electrode and the hole extraction electrode or in a region right under the source electrode, the first semiconductor layer and the second semiconductor layer form a vertical interface approximately perpendicular to a surface of the substrate, and a surface of the first semiconductor layer configured to form the vertical interface is an N-polar surface.
    Type: Grant
    Filed: October 17, 2013
    Date of Patent: September 6, 2016
    Assignee: FUJITSU LIMITED
    Inventor: Naoya Okamoto
  • Publication number: 20160247740
    Abstract: A compound semiconductor device includes a first protection film which covers a surface of a compound semiconductor layer, where the first protection film is an insulating film whose major constituent is Si and at least one element between N and O, and a hydrophobic layer containing Si—CxHy is formed at a surface thereof.
    Type: Application
    Filed: February 15, 2016
    Publication date: August 25, 2016
    Applicant: FUJITSU LIMITED
    Inventors: Shirou OZAKI, Naoya OKAMOTO
  • Publication number: 20160218201
    Abstract: A compound semiconductor device includes: a substrate; a first barrier layer of a nitride semiconductor formed over the substrate; a well layer of a nitride semiconductor formed over the first barrier layer; and a second barrier layer of a nitride semiconductor formed over the well layer, wherein the first barrier layer, the well layer, and the second barrier layer each include a first region having, as an upper surface, a (0001) plane in terms of crystal orientation and a second region having, as an upper surface, a (000-1) plane in terms of crystal orientation, the first region of the first barrier layer, the first region of the well layer, and the first region of the second barrier layer are stacked, the second region of the first barrier layer, the second region of the well layer, and the second region of the second barrier layer are stacked.
    Type: Application
    Filed: January 6, 2016
    Publication date: July 28, 2016
    Applicant: FUJITSU LIMITED
    Inventor: NAOYA OKAMOTO