Abstract: A semiconductor device includes: a semiconductor layer of a first conductivity type formed over a substrate; a plurality of semiconductor nanowires formed of a compound semiconductor of the first conductivity type extending above the semiconductor layer; and a gate electrode formed around the semiconductor nanowires in a connection portion between the semiconductor layer and the semiconductor nanowires.

Abstract: [Object] To provide a semiconductor protective film capable of suppressing a warpage of a semiconductor chip without impairing productivity and reliability, a semiconductor device including this, and a composite sheet. [Solving Means] A semiconductor protective film 10 according to an embodiment of the present invention includes a protective layer 11 formed of a non-conductive inorganic material and an adhesive layer 12 provided on one surface of the protective layer 11. The protective layer 11 includes at least a vitreous material and is typically formed of plate glass. Accordingly, a warpage of a semiconductor element as a protection target can be suppressed effectively.

Abstract: A heat dissipation structure for a semiconductor device, the structure includes: a heat sink provided under a rear surface side of a substrate included in a semiconductor device; and a front heat spreader coupled to metal wiring provided over an electrode disposed on a front surface side of the semiconductor device and a metal unit provided at least partially over an outer peripheral portion of the front surface side of the semiconductor device.

Abstract: A vehicle seat installed in a vehicle includes a seatback, a seat cushion, a seat frame, a movable part, a first spring, a second spring, and a preloading device. The first spring is capable of, when the movable part has shifted in a first direction, generating such an elastic force as causes the movable part to shift toward the neutral position. The second spring is capable of, when the movable part has shifted in a second direction, generating such an elastic force as causes the movable part to shift toward the neutral position. The preloading device is configured to change at least one of the elastic force exerted on the movable part by the first spring and the elastic force exerted on the movable part by the second spring.

Abstract: A semiconductor device includes: a first semiconductor layer formed, on a substrate, of a nitride semiconductor; a second semiconductor layer formed, on the first semiconductor layer, of a nitride semiconductor; a source electrode formed on the second semiconductor layer; a drain electrode formed on the second semiconductor layer; a metal oxide film formed, between the source electrode and the drain electrode, on the second semiconductor layer; and a gate electrode formed on the metal oxide film. The metal oxide film includes AlOx and InOx. AlOx/InOx in the metal oxide film is greater than or equal to 3.

Abstract: A vehicle seat includes a movable portion, a first spring, a second spring, and a preloading device. The first spring is capable of exerting an elastic force to displace the movable portion, which is displaced in a first direction, toward the neutral position. The second spring is capable of exerting an elastic force to displace the movable portion, which is displaced in a second direction, toward the neutral position. The preloading device is capable varying at least one of an elastic force applied by the first spring to the movable portion placed in the neutral position or an elastic force applied by the second spring to the movable portion placed in the neutral position.

Abstract: Light emitted from a light source is irradiated to a reflective light modulator which modulates irradiated light to reflect based on image data and the light reflected by the light modulator is projected. A ratio of return light returning from the light modulator to the light source to the light irradiated to the light modulator is calculated based on the image data. A light amount of the light emitted from the light source is calculated by using the calculated ratio and a detection output of an optical sensor provided between the light source and the light modulator.

Abstract: A control apparatus to control a plurality of process executing apparatuses, the control apparatus including: a communication unit; and a processor. The processor transmits a request to execute predetermined processing common to the process executing apparatuses, a request to change to an energy saving mode, and a request to change to a normal mode, to each of the process executing apparatuses via the communication unit, and performs control of transmission of the request to execute the predetermined processing, the request to change to the energy saving mode, and the request to change to the normal mode, such that one of the process executing apparatuses executes the predetermined processing while a rest of the process executing apparatuses is in the energy saving mode, and such that all the process executing apparatuses execute the predetermined processing in sequence.

Abstract: A semiconductor device includes: a semiconductor layer; a first insulating film which covers a surface of the semiconductor layer; a first adhering film which is formed on a surface of the first insulating film and contains a carbonyl group; and a second insulating film which covers a surface of the first adhering film and has a lower dielectric constant than the first insulating film.

Abstract: A compound semiconductor device includes a compound semiconductor laminate structure including an electron transit layer and an electron supply layer, a gate electrode, a source electrode, and a drain electrode that are formed over the electron supply layer, a first insulating layer of diamond formed between the gate electrode and the drain electrode over the compound semiconductor laminate structure, and a second insulating layer formed between the gate electrode and the source electrode over the compound semiconductor laminate structure, wherein a positive compressive stress is applied from the first insulating layer to the electron supply layer, and a compressive stress from the second insulating layer to the electron supply layer is smaller than the compressive stress from the first insulating layer to the electron supply layer.

Abstract: A vehicle seat installed in a vehicle includes a seatback, a seat cushion, a seat frame, a movable part, a first spring, a second spring, and a preloading device. The first spring is capable of, when the movable part has shifted in a first direction, generating such an elastic force as causes the movable part to shift toward the neutral position. The second spring is capable of, when the movable part has shifted in a second direction, generating such an elastic force as causes the movable part to shift toward the neutral position. The preloading device is configured to change at least one of the elastic force exerted on the movable part by the first spring and the elastic force exerted on the movable part by the second spring.

Abstract: A vehicle seat includes a movable portion, a first spring, a second spring, and a preloading device. The first spring is capable of exerting an elastic force to displace the movable portion, which is displaced in a first direction, toward the neutral position. The second spring is capable of exerting an elastic force to displace the movable portion, which is displaced in a second direction, toward the neutral position. The preloading device is capable varying at least one of an elastic force applied by the first spring to the movable portion placed in the neutral position or an elastic force applied by the second spring to the movable portion placed in the neutral position.

Abstract: Provided is a multi-projector system including: projectors; an image outputting apparatus; and an adjusting apparatus to adjust images. Each of the projectors includes: a light-emitting unit to emit the modulated light; and a color adjusting unit to adjust colors of the projected image. The image outputting apparatus includes an outputting unit to output the first adjustment image and the second adjustment image as the input images of the projectors. The adjusting apparatus includes: an imaging unit to take a projected image and to output a captured image; an analyzing unit to analyze an image of the overlapping area from the captured image so as to determine a color component; and a controller for controlling the color adjusting unit of the first projector so that the color of the overlapping area is an achromatic color in accordance with the color component determined as a result of the analysis.

Abstract: A semiconductor device includes a semiconductor chip including a substrate and an element region on the substrate, a heat transfer body made of diamond, and a metal layer between the semiconductor chip and the heat transfer body, wherein the substrate includes an amorphous region on a back surface thereof, the amorphous region and the metal layer are bonded to each other, and the metal layer and the heat transfer body are bonded to each other.

Abstract: A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode, the first oxidized region having an oxygen concentration higher than an oxygen concentration of a region near an interface with a region of the insulating film other than below the gate electrode.

Abstract: An imaging control apparatus includes: a processor; and a radio communication unit capable of selecting a first transmission mode and a second transmission mode, the first transmission mode involving wireless data transmission to each of a plurality of imaging apparatuses with reception of a receipt acknowledgement from the imaging apparatuses, the second transmission mode involving simultaneous wireless data transmission to the imaging apparatuses without reception of the receipt acknowledgement from the imaging apparatuses. The processor performs a communication controlling step involving, in the case of instructing at least one simultaneous shooting process to the imaging apparatuses, separately transmitting each piece of shooting preparation instruction data instructing shooting preparation to each of the imaging apparatuses in the first transmission mode, and then simultaneously transmitting shooting instruction data to the imaging apparatuses in the second transmission mode.

Abstract: A semiconductor device includes: a first semiconductor layer formed, on a substrate, of a nitride semiconductor; a second semiconductor layer formed, on the first semiconductor layer, of a nitride semiconductor; a source electrode formed on the second semiconductor layer; a drain electrode formed on the second semiconductor layer; a metal oxide film formed, between the source electrode and the drain electrode, on the second semiconductor layer; and a gate electrode formed on the metal oxide film. The metal oxide film includes AlOx and InOx. AlOx/InOx in the metal oxide film is greater than or equal to 3.

Abstract: A photosynthesis apparatus includes a groove part formed in a semiconductor substrate; a first conductive type area formed on one side surface of the groove part; a second conductive type area formed on another side surface of the groove part; an oxidation electrode formed in contact with the first conductive type area on the one side surface; a reduction electrode formed in contact with the second conductive type area on the other side surface; and a proton diaphragm formed at a center part of the groove part. Water including carbon dioxide is supplied to the groove part, and light is radiated to the oxidation electrode or the reduction electrode to generate oxygen and a hydrogen ion from the water at the oxidation electrode, and the generated hydrogen ion penetrates the proton diaphragm and reacts with the carbon dioxide to generate formic acid at the reduction electrode.

Abstract: A semiconductor device includes: a first semiconductor layer formed, on a substrate, of a nitride semiconductor; a second semiconductor layer formed, on the first semiconductor layer, of a nitride semiconductor; a source electrode formed on the second semiconductor layer; a drain electrode formed on the second semiconductor layer; a metal oxide film formed, between the source electrode and the drain electrode, on the second semiconductor layer; and a gate electrode formed on the metal oxide film. The metal oxide film includes AlOx and InOx. AlOx/InOx in the metal oxide film is greater than or equal to 3.

Abstract: A receiver sets a storage capacity to be assigned for each connected digital camera based on the number of connected digital cameras, and allocates these storage capacities in a buffer. Also, the receiver sends a request for a through image for each frame to each of the connected digital cameras, receives through images transmitted in response to the requests, and stores the through images in areas of the buffer assigned for each of the digital cameras. Furthermore, after receiving the through image for one frame from each digital camera, the receiver performs image processing on each through image and causes these images to be displayed in a list form on one screen of the display section.