Abstract: A control apparatus to control a plurality of process executing apparatuses, the control apparatus including: a communication unit; and a processor. The processor transmits a request to execute predetermined processing common to the process executing apparatuses, a request to change to an energy saving mode, and a request to change to a normal mode, to each of the process executing apparatuses via the communication unit, and performs control of transmission of the request to execute the predetermined processing, the request to change to the energy saving mode, and the request to change to the normal mode, such that one of the process executing apparatuses executes the predetermined processing while a rest of the process executing apparatuses is in the energy saving mode, and such that all the process executing apparatuses execute the predetermined processing in sequence.

Abstract: A receiver sets a storage capacity to be assigned for each connected digital camera based on the number of connected digital cameras, and allocates these storage capacities in a buffer. Also, the receiver sends a request for a through image for each frame to each of the connected digital cameras, receives through images transmitted in response to the requests, and stores the through images in areas of the buffer assigned for each of the digital cameras. Furthermore, after receiving the through image for one frame from each digital camera, the receiver performs image processing on each through image and causes these images to be displayed in a list form on one screen of the display section.

Abstract: A support device, which supports a belt-shaped sheet wound around a hollow cylindrical shaft core so as to feed the belt-shaped sheet, includes a support shaft that is insertable into a hollow part of the shaft core, a frame that supports the support shaft, an antenna surface perpendicular to an axis line of the support shaft, and a loop antenna provided to the antenna surface. The shaft core includes a non-contact data carrier capable of at least one of storing and transmitting predetermined data. The loop antenna includes a loop unit coiled to define a loop surrounding the axis line. When the shaft core is seen through the loop antenna along the axis line, the loop unit is disposed in the vicinity of the shaft core.

Abstract: A squeeze film damper includes a bearing housing as an inner ring disposed around a radially outer side of a bearing which rotatably supports a rotary shaft, an outer ring disposed around a radially outer side of the bearing housing, a squeeze film formed by circulating a viscous fluid through a clearance in a radial direction between the bearing housing and the outer ring, and a coupling pin which couples the bearing housing and the outer ring to each other and is deformable in response to relative displacement in the radial direction between the outer ring and the bearing housing. The coupling pin has stiffness that is higher in a vertical direction than in a horizontal direction in a cross section perpendicular to an axial direction of the rotary shaft.

Abstract: A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor, on a substrate; a second semiconductor layer formed of a nitride semiconductor, on the first semiconductor layer; a source electrode and a drain electrode formed on the second semiconductor layer; a first insulating film formed on the second semiconductor layer; a second insulating film formed on the first insulating film; and a gate electrode formed on the second insulating film. The first insulating film includes a nitride film formed on a side of the second semiconductor layer, and an oxynitride film formed on the nitride film, and the second insulating film is formed of an oxide.

Abstract: A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode, the first oxidized region having an oxygen concentration higher than an oxygen concentration of a region near an interface with a region of the insulating film other than below the gate electrode.

Abstract: A semiconductor device includes: a first semiconductor layer formed, on a substrate, of a nitride semiconductor; a second semiconductor layer formed, on the first semiconductor layer, of a nitride semiconductor; a source electrode formed on the second semiconductor layer; a drain electrode formed on the second semiconductor layer; a metal oxide film formed, between the source electrode and the drain electrode, on the second semiconductor layer; and a gate electrode formed on the metal oxide film. The metal oxide film includes AlOx and InOx. AlOx/InOx in the metal oxide film is greater than or equal to 3.

Abstract: A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor on a substrate, a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer, a gate trench formed in the second semiconductor layer or in the second and first semiconductor layers, a gate electrode formed at the gate trench, and a source electrode and a drain electrode formed on the second semiconductor layer. The gate trench has terminal parts of a bottom of the gate trench formed shallower than a center part of the bottom. A part of a sidewall of the gate trench is formed of a surface including an a-plane. The center part of the bottom is a c-plane. The terminal parts of the bottom form a slope from the c-plane to the a-plane.

Abstract: An image processing apparatus including a CPU which is operable to function as units comprising a processing unit which sets, as a first area, an area that is not a peripheral edge area in a captured image acquired by an imaging unit, sets an area including the peripheral edge area as a second area, and performs predetermined processing on one of the first area and the second area, and a specification unit which specifies whether the first area is subjected to the predetermined processing or the second area is subjected to the predetermined processing, based on orientation information of the imaging unit when the captured image is acquired.

Abstract: A semiconductor device includes: a nitride semiconductor multilayer; an insulating film disposed on the nitride semiconductor multilayer; and a gate electrode disposed on the insulating film, wherein the nitride semiconductor multilayer has a first oxidized region near an interface with a region of the insulating film below the gate electrode, the first oxidized region having an oxygen concentration higher than an oxygen concentration of a region near an interface with a region of the insulating film other than below the gate electrode.

Abstract: A rolling bearing (1) including: an inner ring (2) and an outer ring (3) which are bearing rings; a plurality of rolling elements (4) interposed in a rollable manner between raceway surfaces (2a, 3a) of the bearing rings; and a retainer configured to retain the plurality of rolling elements (4), wherein a nozzle (10) configured to inject a cooling fluid (R) toward the rolling elements (4) is provided to a fixed-side bearing ring which is one of the inner ring (2) and the outer ring (3), with an outlet (10a) side of the nozzle (10) oriented forward in a revolution direction of the rolling elements (4).

Abstract: A semiconductor device includes a first semiconductor layer formed of a nitride semiconductor on a substrate, a second semiconductor layer formed of a nitride semiconductor on the first semiconductor layer, a gate trench formed in the second semiconductor layer or in the second and first semiconductor layers, a gate electrode formed at the gate trench, and a source electrode and a drain electrode formed on the second semiconductor layer. The gate trench has terminal parts of a bottom of the gate trench formed shallower than a center part of the bottom. A part of a sidewall of the gate trench is formed of a surface including an a-plane. The center part of the bottom is a c-plane. The terminal parts of the bottom form a slope from the c-plane to the a-plane.

Abstract: A method of producing a semiconductor device includes forming an insulating film on a substrate on which a semiconductor layer is formed; removing a part of the insulating film by etching to form an opening in the insulating film; supplying steam with a temperature greater than or equal to 200° C. and less than or equal to 600° C. to the opening formed in the insulating film; after supplying the steam, applying a solution including a silicon compound to a side surface of the insulating film defining the opening; and forming a hydrophobic film on the side surface of the insulating film defining the opening by polymerizing the silicon compound.

Abstract: A compound semiconductor device includes: a flexible part; a first nitride semiconductor layer above a surface of the flexible part, the first nitride semiconductor layer including a first polar plane and a second polar plane intersecting the surface; a second nitride semiconductor layer in contact with the first nitride semiconductor layer on the first polar plane, a lattice constant of the second nitride semiconductor layer being different from that of the first nitride semiconductor layer; a third nitride semiconductor layer in contact with the first nitride semiconductor layer on the second polar plane, a lattice constant of the third nitride semiconductor layer being different from that of the first nitride semiconductor layer; a first ohmic electrode above an interface between the first nitride semiconductor layer and the second nitride semiconductor layer; and a second ohmic electrode above an interface between the first nitride semiconductor layer and the third nitride semiconductor layer.

Abstract: A method of producing a semiconductor device includes forming an insulating film on a substrate on which a semiconductor layer is formed; removing a part of the insulating film by etching to form an opening in the insulating film; supplying steam with a temperature greater than or equal to 200° C. and less than or equal to 600° C. to the opening formed in the insulating film; after supplying the steam, applying a solution including a silicon compound to a side surface or the insulating film defining the opening; and forming a hydrophobic film on the side surface of the insulating film defining the opening by polymerizing the silicon compound.

Abstract: A support device for supporting a cylindrical member around which is wound an elongated body has: a support shaft for supporting the cylindrical member that is fitted to an external surface of the support shaft from an opening on one end in a longitudinal direction of the cylindrical member; an anchoring plates, built into the support shaft, for anchoring the cylindrical member from an inner circumferential side of the cylindrical member; and an operating means having an operation shaft of a smaller diameter than the support shaft, the operation shaft protruding forward from a distal end of the support shaft in order to operate the anchoring plates. Further, the support device has a protecting member which is attached to the distal end of the support shaft and through which is inserted the operation shaft. The protecting member further has a reduced-diameter section smaller in diameter than the support shaft.

Abstract: A semiconductor device includes: a first electrode; a second electrode; an interlayer insulating film made of a porous insulating material and formed above the first electrode and the second electrode; and connection parts electrically connected to the first electrode and the second electrode respectively, wherein a cavity is formed between the interlayer insulating film and a surface of the first electrode, a surface of the second electrode, and parts of surfaces of the connection parts.

Abstract: A semiconductor device includes a semiconductor stacked structure in which a semiconductor layer including an electron supply layer and an electron transit layer is stacked, and a gate electrode contacting with the semiconductor layer included in the semiconductor stacked structure or an insulating layer. The portion of the gate electrode contacting with the semiconductor layer or the insulating layer is an oxide of a metal configuring the portion of the gate electrode contacting with the semiconductor layer or the insulating layer.

Abstract: A support device, which supports a belt-shaped sheet wound around a hollow cylindrical shaft core so as to feed the belt-shaped sheet, includes a support shaft that is insertable into a hollow part of the shaft core, a frame that supports the support shaft, an antenna surface perpendicular to an axis line of the support shaft, and a loop antenna provided to the antenna surface. The shaft core includes a non-contact data carrier capable of at least one of storing and transmitting predetermined data. The loop antenna includes a loop unit coiled to define a loop surrounding the axis line. When the shaft core is seen through the loop antenna along the axis line, the loop unit is disposed in the vicinity of the shaft core.

Abstract: The influenced of condensed water on an EGR device is alleviated. A device (100) that controls a cooling system including adjusting means for being able to adjust a circulation amount of coolant in a first flow passage, including an engine cooling flow passage, an EGR cooling flow passage and a radiator flow passage, and a second flow passage, including the engine cooling flow passage, the EGR cooling flow passage and a bypass flow passage and not including the radiator flow passage, includes: measuring means for measuring a temperature of the coolant; limiting means for limiting circulation of the coolant at starting an internal combustion engine; and control means for circulating the coolant preferentially through the second flow passage via control over the adjusting means based on the measured temperature in a period in which circulation of the coolant is limited.