Abstract: A user is presented with determination information obtained by determining a condition of a target site and feature information indicating a feature related to a condition of a body of a subject, which are generated from the same image representing the target site of the subject. A determination system includes an acquirer that acquires a target image representing a target site of a body of a subject, a first generator that generates first determination information indicating a condition of the target site from the target image used to generate the first determination information, a second generator that generates feature information indicating a feature related to a condition of the body of the subject from the target image, and a display controller that causes a display apparatus to display the first determination information and the feature information.

Abstract: A prediction image is generated and output that represents a condition of a target region of a subject. A prediction system includes a prediction information acquirer that acquires (a) a subject image representing a target region of a subject at a first time, and (b) first prediction information regarding the target region at a second time when a predetermined period has elapsed from the first time; and a prediction image generation unit that generates a prediction image indicating a condition of the target region at the second time from the subject image based on the first prediction information and output the prediction image.

Abstract: A novel antibody that can be used as an anti-tumor agent and an anti-tumor agent that comprises, as an active ingredient, a molecule containing such an antibody.

Abstract: Provided is a laminate capable of reducing a change in hue of a reflected image in the surroundings (for example, window glass) from an original image, suppressing a hue shift of particularly the reflected image to redness, and suppressing the reflected image from being conspicuous, a reflection prevention system including this laminate, and an image display device including this laminate. The laminate includes a polarizer having an absorption axis in an in-plane direction, a light absorption anisotropic layer containing a liquid crystal compound and a dichroic substance, and a linear polarization conversion layer, in which an angle between a transmittance central axis of the light absorption anisotropic layer and a normal line of a layer plane of the light absorption anisotropic layer is 0° or greater and 45° or less.

Abstract: A multilayer body includes a base material layer containing a polypropylene resin and a heat seal layer containing a cyclic polyolefin. The cyclic polyolefin is a hydrogenated block copolymer having a hydrogenated aromatic vinyl polymer block unit which is a hydrogenated polymer block composed of aromatic vinyl monomer units and a hydrogenated conjugated diene polymer block unit which is a hydrogenated polymer block composed of conjugated diene monomer units, and the hydrogenated block copolymer has at least two hydrogenated aromatic vinyl polymer block units and at least one hydrogenated conjugated diene polymer block unit.

Abstract: In a lift-up buckle device, a slider and a shoe move forward and a buckle is moved to a stowed position. The shoe impacts against a protruding portion at a lower portion of a damper and interferes with a housing via the lower portion of the damper. Thus, the forward movement of the slider and shoe is stopped, while the damper absorbs an impact against the slider and shoe. Therefore, an amount of the impact against the slider and shoe that is absorbed by the damper may be increased by the protruding portion, and the damper may absorb the impact against the slider and shoe effectively.

Abstract: The consumption current of a TCAM device is reduced. A semiconductor device includes multiple sub-arrays each including a TCAM cell array. Each sub-array searches the corresponding part of the input search data. Each sub-array outputs the search result indicative of a match for every entry without searching, when the corresponding first control signal is activated.

Abstract: The consumption current of a TCAM device is reduced. A semiconductor device includes multiple sub-arrays each including a TCAM cell array. Each sub-array searches the corresponding part of the input search data. Each sub-array outputs the search result indicative of a match for every entry without searching, when the corresponding first control signal is activated.

Abstract: The present invention makes it possible to form a circuit configuration that is capable of executing a keyword search at an increased speed while suppressing an increase in the memory capacity of a content-addressable memory. A semiconductor device according to an aspect of the present invention searches an input data string for a predesignated keyword, and includes a first content-addressable memory that stores a partial keyword corresponding to a predetermined number of data beginning with the first data of the keyword, a second content-addressable memory that stores the entirety of the keyword, and a control circuit that is coupled to the first content-addressable memory and to the second content-addressable memory. When a portion matching the partial keyword is detected in the input data string by a search in the first content-addressable memory, the second content-addressable memory executes a search on search data extracted from the input data string.

Abstract: The consumption current of a TCAM device is reduced. A semiconductor device includes multiple sub-arrays each including a TCAM cell array. Each sub-array searches the corresponding part of the input search data. Each sub-array outputs the search result indicative of a match for every entry without searching, when the corresponding first control signal is activated.

Abstract: Provided are a through electrode including an organic side-wall insulating film, capable of eliminating a barrier layer and achieving satisfactory mechanical reliability and electrical reliability and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a through electrode disposed in a semiconductor substrate is provided, including: a copper layer in the semiconductor substrate; and a side-wall insulating film that is disposed between the copper layer and the semiconductor substrate so as to be in contact with the copper layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1).

Abstract: In a lift-up buckle device, a slider and a shoe move forward and a buckle is moved to a stowed position. The shoe impacts against a protruding portion at a lower portion of a damper and interferes with a housing via the lower portion of the damper. Thus, the forward movement of the slider and shoe is stopped, while the damper absorbs an impact against the slider and shoe. Therefore, an amount of the impact against the slider and shoe that is absorbed by the damper may be increased by the protruding portion, and the damper may absorb the impact against the slider and shoe effectively.

Abstract: The consumption current of a TCAM device is reduced. A semiconductor device includes multiple sub-arrays each including a TCAM cell array. Each sub-array searches the corresponding part of the input search data. Each sub-array outputs the search result indicative of a match for every entry without searching, when the corresponding first control signal is activated.

Abstract: The consumption current of a TCAM device is reduced. A semiconductor device includes multiple sub-arrays each including a TCAM cell array. Each sub-array searches the corresponding part of the input search data. Each sub-array outputs the search result indicative of a match for every entry without searching, when the corresponding first control signal is activated.

Abstract: Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.

Abstract: Embodiments provided are a through electrode that can be manufactured by a method not including the step of removing a side-wall insulating film formed at the bottom part of the through hole and so having improved electrical characteristics and mechanical reliability and a manufacturing method thereof as well as a semiconductor device and a manufacturing method thereof. A through electrode is disposed in a semiconductor substrate, and includes: a conductive layer; a side-wall insulating film that is disposed between the conductive layer and the semiconductor substrate, the side-wall insulating film being represented by the following chemical formula (1), and a tubular semiconductor layer disposed between the conductive layer and the semiconductor substrate, the semiconductor layer including a same material as the material of the semiconductor substrate.

Abstract: A method of manufacturing a semiconductor device according to the present invention comprises: a bump forming step of forming a bump electrode 100 on a semiconductor chip 1, the bump electrode 100 protruding in a substantially conical shape; a pad forming step of forming a pad electrode 200 on a substrate 10, the pad electrode 200 having a recess 210 with inner lateral surfaces thereof defining a substantially pyramidal shape or a prism shape; a pressing step of pressing the bump electrode 100 and the pad electrode 200 in a direction which brings them closer to each other, with the bump electrode 100 being inserted in the recess 210 so that the central axis of the bump electrode 100 and the central axis of the recess 210 coincide with each other; and an ultrasonic joining step of joining the bump electrode 100 and the pad electrode 200 by vibrating at least one of the bump electrode 100 and the pad electrode 200 using ultrasonic waves.

Abstract: An entry including multiple bits of unit cells each storing data bit is coupled to a match line. The match line is supplied with a charging current having a restricted current value smaller than a match line current flowing in a one-bit miss state in one entry, but larger than a match line current flowing in an all-bit match state in one entry. A precharge voltage level of a match line is restricted to a voltage level of half a power supply voltage or smaller. Power consumption in a search cycle of a content addressable memory can be reduced, and a search operation speed can be increased.

Abstract: The present invention makes it possible to form a circuit configuration that is capable of executing a keyword search at an increased speed while suppressing an increase in the memory capacity of a content-addressable memory. A semiconductor device according to an aspect of the present invention searches an input data string for a predesignated keyword, and includes a first content-addressable memory that stores a partial keyword corresponding to a predetermined number of data beginning with the first data of the keyword, a second content-addressable memory that stores the entirety of the keyword, and a control circuit that is coupled to the first content-addressable memory and to the second content-addressable memory. When a portion matching the partial keyword is detected in the input data string by a search in the first content-addressable memory, the second content-addressable memory executes a search on search data extracted from the input data string.

Abstract: The consumption current of a TCAM device is reduced. A semiconductor device includes multiple sub-arrays each including a TCAM cell array. Each sub-array searches the corresponding part of the input search data. Each sub-array outputs the search result indicative of a match for every entry without searching, when the corresponding first control signal is activated.