Abstract: The information processing apparatus includes a pointing stick which is disposed on a keyboard, has an operable stick and is possible to detect a displacement in an installation plane direction of the stick and a displacement in a direction which is vertical to the installation plane and a main control unit which displays a predetermined menu screen on a display unit in a case where the pointing stick detects a specific operation which includes the displacement of the stick in the vertical direction.

Abstract: A positive electrode includes at least a positive electrode current collector and a positive electrode active material layer. The positive electrode active material layer is disposed on a surface of the positive electrode current collector. The positive electrode current collector includes an aluminum foil and an aluminum hydrated oxide film. The aluminum hydrated oxide film covers a surface of the aluminum foil. The aluminum hydrated oxide film has a thickness not smaller than 50 nm and not greater than 500 nm. The aluminum hydrated oxide film contains a plurality of types of aluminum hydrated oxides. The ratio of boehmite to the plurality of types of aluminum hydrated oxides is not lower than 20 mol % and not higher than 80 mol %.

Abstract: A vapor deposition device is provided that can ameliorate or improve the LPD quality. A vapor deposition device includes a first holder that supports a carrier at a topmost-level and a second holder that supports the carrier under the first holder in a load-lock chamber, and a second robot mounts a before-treatment wafer extracted from a wafer storage container on the carrier standing by at the first holder in the load-lock chamber.

Abstract: For correction of a source gas supply time and a dopant gas flow rate, a calculation unit in an epitaxial wafer production system performs not only correction based on a result of comparing measured thickness and resistivity of an epitaxial film respectively with a target thickness range and a target resistivity range, but also correction based on a variation in total output value of upper and lower lamps.

Abstract: A motor drive control device includes a control unit monitoring a rotational state of a rotor of a two-phase stepping motor, setting an energization angle ? representing a magnitude of an electric angle for continuously energizing, of coils of two phases of the two-phase stepping motor, a coil of one phase in one direction based on the rotational state of the rotor, and generating a control signal Sd for controlling driving of the two-phase stepping motor based on the set energization angle ?, and a drive unit driving the coils of two phases based on the control signal Sd.

Abstract: A negative electrode constituting a non-aqueous electrolyte secondary battery, which is an example of an embodiment, comprises a negative-electrode mixture layer including a negative-electrode active material and a binder agent. The negative electrode includes, as the binder agent, at least a polymer constituted by a constituent unit A represented by formula (1), a constituent unit B represented by formula (2), and a constituent unit C represented by formula (3). The molar ratio (l/m) of the constituent unit A to the constituent unit B is from 0.2 to 1.8.

Abstract: An epitaxial wafer includes a silicon substrate having a top surface and an epitaxial layer on said top surface, wherein the epitaxial layer has a thickness in a range of 0.3 ?m to 1.0 ?m, and a thickness variation of 1% or less. A method of preparing such epitaxial wafer includes placing a silicon substrate on a susceptor in an epitaxial reactor; rotating the susceptor at a rotation rate (D); and applying a source gas in the epitaxial reactor to grow an epitaxial layer of a desired thickness (B) at a growth rate (A) on the silicon substrate; wherein the source gas is applied for a growth time (C) that satisfies C=B/A and the rotation rate (D) is selected from a range of 22 to 70 rpm that allows the susceptor to rotate to an exact integer number of turns (E) based on a relationship D=E/C.

Abstract: The present disclosure provides cladding in which at least two layers of alloys are joined, the cladding having high wear resistance, high workability, and excellent strength at the joining interface of the alloys. The cladding is composed of two or more layers including a first alloy and a second alloy joined to the first alloy. The hardness of the second alloy of the cladding is greater than that of the first alloy, and the difference in hardness between the first alloy and the second alloy is at least HRC 44. When a shearing test based on JIS G 0601 is performed on the cladding, the breakage is on the first alloy side.

Abstract: A motor drive control device includes a control unit generating a control signal Sd such that one-phase excitation of exciting, of coils and of two phases of a two-phase stepping motor, a coil for one phase and two-phase excitation of exciting the coils for two phases are alternately repeated, and a drive unit driving the coils of two phases based on the control signal Sd. An energization angle ? representing a magnitude of an electric angle for continuously energizing the coil of one phase in one direction is capable of being set in the control unit. Specifically, the control unit determines a period T1n for performing the one-phase excitation based on a back electromotive voltage generated in the coil non-excited in the one-phase excitation, and determines a period T2n for performing the two-phase excitation based on an elapsed time per unit angle while the two-phase stepping motor is being excited and the energization angle ?.

Abstract: In a side view, when an angle ?1 formed between the light axis of light incident on a surface of a silicon wafer and the surface (or an imaginary plane corresponding to the surface) is 67° to 78° and an angle formed between the surface of the silicon wafer (or an imaginary plane corresponding to the surface) and the detection optical axis of a photodetector is ?2, ?1??2 is ?6° to ?1° or 1° to 6°.

Abstract: A vapor deposition device is provided that can suppress an influence on an epitaxial layer which is caused by a position of a lift pin without adjusting an upper and lower heating ratio of a wafer. A reaction chamber is provided with a susceptor on which a carrier is placed, and a carrier lift pin which moves the carrier vertically relative to the susceptor; and the carrier lift pin is installed outside of an outer edge of the wafer when a state where the carrier supporting the wafer is mounted on the susceptor is viewed in a plan view.

Abstract: A control device includes a calculation unit generating control information for an epitaxial growth apparatus; and a storage unit storing measurement values for an epitaxial film formed by the epitaxial growth apparatus and measurement values for epitaxial films formed by a plurality of other epitaxial growth apparatuses that are provided in the same production line as the epitaxial growth apparatus that needs new control. The calculation unit generates and outputs information for controlling at least one of the supply time of a source gas and the flow rate of a dopant gas in the epitaxial growth apparatus based on the measurement values for the epitaxial film formed by the epitaxial growth apparatus that needs new control and the measurement values of the epitaxial films formed by the other epitaxial growth apparatuses in the same production line that are in operation concurrently with the epitaxial growth apparatus.

Abstract: A motor drive control device includes a control unit generating a control signal Sd such that one-phase excitation of exciting, of coils and of two phases of a two-phase stepping motor, a coil for one phase and two-phase excitation of exciting the coils for two phases are alternately repeated, and a drive unit driving the coils of two phases based on the control signal Sd. An energization angle ? representing a magnitude of an electric angle for continuously energizing the coil of one phase in one direction is capable of being set in the control unit. Specifically, the control unit determines a period T1n for performing the one-phase excitation based on a back electromotive voltage generated in the coil non-excited in the one-phase excitation, and determines a period T2n for performing the two-phase excitation based on an elapsed time per unit angle while the two-phase stepping motor is being excited and the energization angle ?.

Abstract: A motor drive control device includes a control unit monitoring a rotational state of a rotor of a two-phase stepping motor, setting an energization angle ? representing a magnitude of an electric angle for continuously energizing, of coils of two phases of the two-phase stepping motor, a coil of one phase in one direction based on the rotational state of the rotor, and generating a control signal Sd for controlling driving of the two-phase stepping motor based on the set energization angle ?, and a drive unit driving the coils of two phases based on the control signal Sd.

Abstract: A positive electrode includes at least a positive electrode current collector and a positive electrode active material layer. The positive electrode active material layer is formed on a surface of the positive electrode current collector. The positive electrode current collector includes an aluminum foil and a porous film. The porous film covers a surface of the aluminum foil. The porous film contains at least aluminum oxide. The porous film has a thickness not smaller than 10 nm and not greater than 800 nm. The porous film has a dynamic hardness not lower than 5 and not higher than 200.

Abstract: The amount of gas evacuation from a reaction chamber of an apparatus for manufacturing epitaxial wafers is controlled to any one of: a first amount of gas evacuation when an epitaxial film formation process is performed in the reaction chamber; a second amount of gas evacuation smaller than the first amount of gas evacuation when a gate valve is opened to load or unload a wafer between the reaction chamber and a wafer transfer chamber; and a third amount of gas evacuation larger than the first amount of gas evacuation until a purge process for a gas in the reaction chamber is completed after the epitaxial film formation process is completed in the reaction chamber.

Abstract: A carrier is formed in ring shape having a bottom surface mounted on an upper surface of a susceptor, an upper surface that contacts and supports an outer edge of a back surface of the wafer, an outer peripheral side wall surface and an inner peripheral side wall surface, and a gas vent hole is provided to penetrate between a space partitioned by the wafer, the carrier and the susceptor and a back surface of the susceptor.

Abstract: A positive electrode includes at least a positive electrode current collector and a positive electrode active material layer. The positive electrode active material layer is formed on a surface of the positive electrode current collector. The positive electrode current collector includes an aluminum foil and a porous film. The porous film covers a surface of the aluminum foil. The porous film contains at least aluminum oxide. The porous film has a thickness not smaller than 10 nm and not greater than 800 nm. The porous film has a dynamic hardness not lower than 5 and not higher than 200.

Abstract: Using the first robot, the carrier standing by in the load lock chamber is deposited into the reaction chamber without mounting the wafer before processing, and cleaning gas is supplied while the reaction chamber is maintained at a predetermined cleaning temperature, and the carrier that has been cleaned in the reaction chamber is transferred to the load lock chamber using the first robot. The carrier and susceptor are cleaned at a predetermined frequency. After that, the carrier is carried out from the reaction chamber, and the reaction gas is supplied to the reaction chamber to form a polysilicon film on the surface of the susceptor.

Abstract: Using the first robot, the carrier standing by in the load lock chamber is deposited into the reaction chamber without mounting the wafer before processing, and cleaning gas is supplied while the reaction chamber is maintained at a predetermined cleaning temperature, and the carrier that has been cleaned in the reaction chamber is transferred to the load lock chamber using the first robot. The carrier is cleaned at a predetermined frequency.