Abstract: Methods of the present disclosure can include a method for estimating a spatial characteristic of an integrated circuit (IC), the method comprising: calculating a correlation between a dimension of a photoresist layer and exposure to a scanning electron microscope (SEM) for at least one reference IC pattern in the photoresist layer, the correlation providing a relationship between the dimension of the photoresist and the spatial characteristic, wherein the calculating is based on: an SEM image of the at least one reference IC pattern produced from reducing the dimension of the photoresist layer with the SEM from an initial value to a reduced value, the initial value of the dimension, and the reduced value of the dimension; and estimating the spatial characteristic of a target IC based on the correlation.

Abstract: Embodiments of the invention relate generally to semiconductor wafer technology and, more particularly, to the use of conformal grounding for active charge screening on wafers during wafer processing and metrology. A first aspect of the invention provides a method of reducing an accumulated surface charge on a semiconductor wafer, the method comprising: grounding a layer of conductive material adjacent a substrate of the wafer; and allowing a mirrored charge substantially equal in magnitude and opposite in sign to the accumulated surface charge to be induced along the conductive material.

Abstract: Embodiments of the invention relate generally to semiconductor wafer technology and, more particularly, to the use of conformal grounding for active charge screening on wafers during wafer processing and metrology. A first aspect of the invention provides a method of reducing an accumulated surface charge on a semiconductor wafer, the method comprising: grounding a layer of conductive material adjacent a substrate of the wafer; and allowing a mirrored charge substantially equal in magnitude and opposite in sign to the accumulated surface charge to be induced along the conductive material.

Abstract: Methods and systems are provided for fabricating and measuring physical features of a semiconductor device structure. An exemplary method of fabricating a semiconductor device structure involves forming a first feature of the semiconductor device structure on a substrate of semiconductor material, obtaining a first measurement for the semiconductor device structure from a first metrology tool, obtaining a second measurement of the first feature of the semiconductor device structure from a second metrology tool, and determining a hybrid measurement for the first feature based at least in part on the first measurement and the second measurement.

Abstract: A method of forming a trench in a semiconductor device formed of a substrate and a first layer formed over the substrate includes forming an initial trench that passes through the first layer to the substrate, the initial trench having a diameter that decreases from a first diameter to a second diameter, the second diameter being measured at a distance closer to the substrate than the first diameter; exposing the trench to a dopant via an orthogonal ion implant to form doped regions sidewalls of the trench; and etching the trench to remove at least some of the doped regions.

Abstract: An apparatus for simultaneous parallel processing of a sample using light energy for optical viewing or surface processing in parallel with a charged particle beam. A charged particle beam transmits a focused ion beam or an electron beam along a path to a sample. An optical microscope transmits light along a first path to the sample, and a prism aligned along the first light path reflects light into a second light path toward the sample. A portion of the prism and reflective surface is removed for passage of the charged particle beam. A lens is aligned along the second light path and has a portion removed for passage of the charged particle beam. The removed portions of the prism and lens are aligned along the charged particle beam path to permit parallel delivery of the charged particle beam and the light to substantially the same portion of the sample.

Abstract: An apparatus for simultaneous parallel processing of a sample using light energy for optical viewing or surface processing in parallel with a charged particle beam. A charged particle beam transmits a focused ion beam or an electron beam along a path to a sample. An optical microscope transmits light along a first path to the sample, and a prism aligned along the first light path reflects light into a second light path toward the sample. A portion of the prism and reflective surface is removed for passage of the charged particle beam. A lens is aligned along the second light path and has a portion removed for passage of the charged particle beam. The removed portions of the prism and lens are aligned along the charged particle beam path to permit parallel delivery of the charged particle beam and the light to substantially the same portion of the sample.

Abstract: An optical-fiber based light channel system is included in an ion/electron beam tool for imaging and/or processing integrated circuits. The optical channel system includes an image collection portion, an optical fiber image transmission portion and a detector portion. The image collection portion includes micro-optical components and has submillimeter dimensions, so that it is easily accommodated within the working distance of the ion/electron beam tool. The entire system is sufficiently compact and lightweight so that it may easily be mounted on a translation stage inside the sample chamber, which permits the optical channel to be mechanically extended and retracted to avoid blocking the primary ion or electron beam. The system may be mounted to a translation stage or to a gas injector assembly, which may itself be mounted to a flange plate on the chamber wall with feed-through ports for electrical and optical signals.

Abstract: An optical-fiber based light channel system is included in an ion/electron beam tool for imaging and/or processing integrated circuits. The optical channel system includes an image collection portion, an optical fiber image transmission portion and a detector portion. The image collection portion includes micro-optical components and has submillimeter dimensions, so that it is easily accommodated within the working distance of the ion/electron beam tool. The entire system is sufficiently compact and lightweight so that it may easily be mounted on a translation stage inside the sample chamber, which permits the optical channel to be mechanically extended and retracted to avoid blocking the primary ion or electron beam. The system may be mounted to a translation stage or to a gas injector assembly, which may itself be mounted to a flange plate on the chamber wall with feed-through ports for electrical and optical signals.

Abstract: Detection of weak ion currents scattered from a sample by an ion beam is improved by the use of a multiplier system in which a conversion electrode converts incident ions to a number of secondary electrons multiplied by a multiplication factor, the secondary electrons being attracted to an electron detector by an appropriate bias. In one version, the detector is a two stage system, in which the secondary electrons strike a scintillator that emits photons that are detected in a photon detector such as a photomultiplier or a CCD.

Abstract: Detection of weak ion currents scattered from a sample by an ion beam is improved by the use of a multiplier system in which a conversion electrode converts incident ions to a number of secondary electrons multiplied by a multiplication factor, the secondary electrons being attracted to an electron detector by an appropriate bias. In one version, the detector is a two stage system, in which the secondary electrons strike a scintillator that emits photons that are detected in a photon detector such as a photomultiplier or a CCD.