Patents by Inventor Nashmia SABIH

Nashmia SABIH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10403495
    Abstract: According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: September 3, 2019
    Assignee: COMSATS UNIVERSITY ISLAMABAD
    Inventors: Arshad Saleem Bhatti, Uzma Nosheen, Liaquat Aziz, Nashmia Sabih
  • Publication number: 20190043717
    Abstract: According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.
    Type: Application
    Filed: August 7, 2018
    Publication date: February 7, 2019
    Inventors: Arshad Saleem BHATTI, Uzma NOSHEEN, Liaquat AZIZ, Nashmia SABIH
  • Patent number: 10096469
    Abstract: According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: October 9, 2018
    Assignee: COMSATS Institute of Information Technology (CIIT)
    Inventors: Arshad Saleem Bhatti, Uzma Nosheen, Liaquat Aziz, Nashmia Sabih
  • Publication number: 20180061637
    Abstract: According to exemplary embodiments, a method of synthesizing tin (Sn)-doped Zinc Sulfide (ZnS) nanostructures for electroluminescent white light source includes coating a substrate, including a silicon oxide layer, with Sn by vacuuming depositing Sn as catalyst nanostructures on the substrate, placing the substrate coated with Sn in a furnace, introducing a carrier flow gas into the furnace, adding a ZnS power to the furnace, growing ZnS nanostructures, and dissolving Sn in the growing ZnS nanostructures. The S vacancies are on a surface of the ZnS nanostructures. The ZnS nanostructures are grown on the substrate having a temperature in a range of 750° C. to 850° C.
    Type: Application
    Filed: August 23, 2017
    Publication date: March 1, 2018
    Inventors: Arshad Saleem BHATTI, Uzma NOSHEEN, Liaquat AZIZ, Nashmia SABIH