Patents by Inventor Natsumi Ueda

Natsumi Ueda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190343816
    Abstract: The present invention provides a pharmaceutical composition containing an inhibitor selected from the group consisting of an EZH1 inhibitor, an EZH2 inhibitor and an EZH1/2 dual inhibitor as an active ingredient, for use in treating HTLV-1-associated myelopathy. The present invention provides a pharmaceutical composition for use in treating HTLV-1-associated myelopathy, containing a 1,3-benzodioxole derivative or a pharmaceutically acceptable salt thereof.
    Type: Application
    Filed: January 18, 2018
    Publication date: November 14, 2019
    Applicants: DAIICHI SANKYO COMPANY, LIMITED, ST. MARIANNA UNIVERSITY SCHOOL OF MEDICINE
    Inventors: Yoshihisa YAMANO, Natsumi UEDA, Kazushi ARAKI
  • Patent number: 6829274
    Abstract: A surface emitting semiconductor laser device of oxidized-Al current confinement structure has a resonant wavelength of a fundamental transverse mode, which is set shorter than or equal to a peak-gain wavelength of the laser device at a specified temperature. The surface emitting semiconductor laser device emits in a single-transverse mode.
    Type: Grant
    Filed: August 6, 2002
    Date of Patent: December 7, 2004
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Natsumi Ueda, Noriyuki Yokouchi, Tatsuyuki Shinagawa
  • Patent number: 6700914
    Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a pair of diffusion Bragg reflectors (DBRs) sandwiching therebetween a multiple quantum well (MQW) comprising active layers. The bottom DBR includes a lower layer structure having AlAs layers having a higher thermal conductivity and AlGaAs layers in pair and an upper layer structure acting anti-oxidation layers and having a pair of AlGaAs layers having different Al contents. A selectively oxidized AlAs layer disposed as the top layer of the bottom DBR comprises an Al-oxidized area and a non-oxidized layer for confinement of current injection path.
    Type: Grant
    Filed: May 30, 2001
    Date of Patent: March 2, 2004
    Assignee: The Furukawa Electric Co., Ltd.
    Inventors: Noriyuki Yokouchi, Masato Tachibana, Natsumi Ueda, Tatsuyuki Shinagawa
  • Publication number: 20030043871
    Abstract: A surface emitting semiconductor laser device of oxidized-Al current confinement structure has a resonant wavelength of a fundamental transverse mode, which is set shorter than or equal to a peak-gain wavelength of the laser device at a specified temperature. The surface emitting semiconductor laser device emits in a single-transverse mode.
    Type: Application
    Filed: August 6, 2002
    Publication date: March 6, 2003
    Inventors: Natsumi Ueda, Noriyuki Yokouchi, Tatsuyuki Shinagawa
  • Publication number: 20030035452
    Abstract: A surface emitting semiconductor laser device has a pair of DBRs having opposite conductivity types, a pair of cladding layers having opposite conductivity types, an undoped active layer and a current confinement layer. The boundary between the p-type region and the n-type region of the laser device resides within the active layer, thereby reducing the operating voltage of the laser device.
    Type: Application
    Filed: August 2, 2002
    Publication date: February 20, 2003
    Inventor: Natsumi Ueda
  • Publication number: 20020182823
    Abstract: A wafer stage having a built-in heater therein mounts a heat conductive disk which mounts thereon an object wafer having an AlAs layer therein. The heat conductive disk has a thermal conductivity equal to or higher than 100 watts/K/meter. The Al-oxidized area in the AlAs layer has excellent in-plane uniformity for the width thereof due to desirable heat distribution of the wafer caused by the heat conductive disk.
    Type: Application
    Filed: December 3, 2001
    Publication date: December 5, 2002
    Inventors: Noriyuki Yokouchi, Natsumi Ueda, Yasumasa Sasaki, Fumio Koyama, Kenichi Iga
  • Publication number: 20020101899
    Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a pair of diffusion Bragg reflectors (DBRs) sandwiching therebetween a multiple quantum well (MQW) comprising active layers. The bottom DBR includes a lower layer structure having AlAs layers having a higher thermal conductivity and AlGaAs layers in pair and an upper layer structure acting anti-oxidation layers and having a pair of AlGaAs layers having different Al contents. A selectively oxidized AlAs layer disposed as the top layer of the bottom DBR comprises an Al-oxidized area and a non-oxidized layer for confinement of current injection path.
    Type: Application
    Filed: May 30, 2001
    Publication date: August 1, 2002
    Inventors: Noriyuki Yokouchi, Masato Tachibana, Natsumi Ueda, Tatsuyuki Shinagawa