Abstract: The present invention provides a pharmaceutical composition containing an inhibitor selected from the group consisting of an EZH1 inhibitor, an EZH2 inhibitor and an EZH1/2 dual inhibitor as an active ingredient, for use in treating HTLV-1-associated myelopathy. The present invention provides a pharmaceutical composition for use in treating HTLV-1-associated myelopathy, containing a 1,3-benzodioxole derivative or a pharmaceutically acceptable salt thereof.

Abstract: The present invention provides a pharmaceutical composition containing an inhibitor selected from the group consisting of an EZH1 inhibitor, an EZH2 inhibitor and an EZH1/2 dual inhibitor as an active ingredient, for use in treating HTLV-1-associated myelopathy. The present invention provides a pharmaceutical composition for use in treating HTLV-1-associated myelopathy, containing a 1,3-benzodioxole derivative or a pharmaceutically acceptable salt thereof.

Abstract: A surface emitting semiconductor laser device of oxidized-Al current confinement structure has a resonant wavelength of a fundamental transverse mode, which is set shorter than or equal to a peak-gain wavelength of the laser device at a specified temperature. The surface emitting semiconductor laser device emits in a single-transverse mode.

Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a pair of diffusion Bragg reflectors (DBRs) sandwiching therebetween a multiple quantum well (MQW) comprising active layers. The bottom DBR includes a lower layer structure having AlAs layers having a higher thermal conductivity and AlGaAs layers in pair and an upper layer structure acting anti-oxidation layers and having a pair of AlGaAs layers having different Al contents. A selectively oxidized AlAs layer disposed as the top layer of the bottom DBR comprises an Al-oxidized area and a non-oxidized layer for confinement of current injection path.

Abstract: A surface emitting semiconductor laser device of oxidized-Al current confinement structure has a resonant wavelength of a fundamental transverse mode, which is set shorter than or equal to a peak-gain wavelength of the laser device at a specified temperature. The surface emitting semiconductor laser device emits in a single-transverse mode.

Abstract: A surface emitting semiconductor laser device has a pair of DBRs having opposite conductivity types, a pair of cladding layers having opposite conductivity types, an undoped active layer and a current confinement layer. The boundary between the p-type region and the n-type region of the laser device resides within the active layer, thereby reducing the operating voltage of the laser device.

Abstract: A wafer stage having a built-in heater therein mounts a heat conductive disk which mounts thereon an object wafer having an AlAs layer therein. The heat conductive disk has a thermal conductivity equal to or higher than 100 watts/K/meter. The Al-oxidized area in the AlAs layer has excellent in-plane uniformity for the width thereof due to desirable heat distribution of the wafer caused by the heat conductive disk.

Abstract: A vertical cavity surface emitting laser (VCSEL) device includes a pair of diffusion Bragg reflectors (DBRs) sandwiching therebetween a multiple quantum well (MQW) comprising active layers. The bottom DBR includes a lower layer structure having AlAs layers having a higher thermal conductivity and AlGaAs layers in pair and an upper layer structure acting anti-oxidation layers and having a pair of AlGaAs layers having different Al contents. A selectively oxidized AlAs layer disposed as the top layer of the bottom DBR comprises an Al-oxidized area and a non-oxidized layer for confinement of current injection path.