Patents by Inventor Natsuo Tatsumi

Natsuo Tatsumi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210230766
    Abstract: Provided are a diamond composite body capable of shortening a separation time for separating a substrate and a diamond layer, the substrate, and a method for manufacturing a diamond, as well as a diamond obtained from the diamond composite body and a tool including the diamond. The diamond composite body includes a substrate including a diamond seed crystal and having grooves in a main surface, a diamond layer formed on the main surface of the substrate, and a non-diamond layer formed on a substrate side at a constant depth from an interface between the substrate and the diamond layer.
    Type: Application
    Filed: April 12, 2021
    Publication date: July 29, 2021
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya
  • Patent number: 11007558
    Abstract: A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: May 18, 2021
    Assignees: Sumitomo Electric Hardmetal Corp., Sumitomo Electric Industries, Ltd., A.L.M.T. Corp.
    Inventors: Makoto Yukawa, Bunya Suemitsu, Takuya Kinoshita, Shigetoshi Sumimoto, Yutaka Kobayashi, Akihiko Ueda, Natsuo Tatsumi, Yoshiki Nishibayashi, Hitoshi Sumiya
  • Patent number: 11001938
    Abstract: Provided are a diamond composite body capable of shortening a separation time for separating a substrate and a diamond layer, the substrate, and a method for manufacturing a diamond, as well as a diamond obtained from the diamond composite body and a tool including the diamond. The diamond composite body includes a substrate including a diamond seed crystal and having grooves in a main surface, a diamond layer formed on the main surface of the substrate, and a non-diamond layer formed on a substrate side at a constant depth from an interface between the substrate and the diamond layer.
    Type: Grant
    Filed: August 10, 2015
    Date of Patent: May 11, 2021
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya
  • Publication number: 20210010131
    Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.
    Type: Application
    Filed: September 25, 2020
    Publication date: January 14, 2021
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Takuji Okahisa, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Natsuo Tatsumi
  • Publication number: 20200361829
    Abstract: This method for producing a body obtained by processing a solid carbon-containing material includes: a step of preparing the solid carbon-containing material having at least a surface composed of solid carbon; and a step of processing the solid carbon-containing material. The step of processing the solid carbon-containing material includes: a sub-step of forming non-diamond carbon by heat-treating the solid carbon in the surface of the solid carbon-containing material; and a sub-step of removing at least a part of the non-diamond carbon.
    Type: Application
    Filed: August 13, 2018
    Publication date: November 19, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki NISHIBAYASHI, Natsuo TATSUMI, Kensei HAMAKI
  • Publication number: 20200361778
    Abstract: A method for producing a body obtained by processing a solid carbon-containing material, the method includes: preparing the solid carbon-containing material composed of a material having at least a surface containing solid carbon; forming a gas phase fluid containing at least one of an active gas or an active plasma which are active against the solid carbon; and processing the solid carbon-containing material by injecting the gas phase fluid onto at least a part of the surface of the solid carbon-containing material.
    Type: Application
    Filed: August 13, 2018
    Publication date: November 19, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki NISHIBAYASHI, Natsuo TATSUMI, Kensei HAMAKI
  • Patent number: 10822693
    Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: November 3, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takuji Okahisa, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Natsuo Tatsumi
  • Patent number: 10774442
    Abstract: In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than ?5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.
    Type: Grant
    Filed: March 20, 2019
    Date of Patent: September 15, 2020
    Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Akihiko Ueda, Yutaka Kobayashi
  • Patent number: 10737943
    Abstract: Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.
    Type: Grant
    Filed: January 18, 2017
    Date of Patent: August 11, 2020
    Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.
    Inventors: Takuya Nohara, Natsuo Tatsumi, Yoshiki Nishibayashi, Hitoshi Sumiya, Yutaka Kobayashi, Akihiko Ueda
  • Publication number: 20200216974
    Abstract: A single-crystal diamond includes n types of regions different in total concentration of an impurity, the n types of regions being observed in an observed surface being in parallel to a (110) face. Each of the n types of regions has an area not smaller than 0.1 ?m2. At least one of a first line, a second line, and a third line on the observed surface crosses a boundary between the n types of regions at least four times. The first line, the second line, and the third line are in parallel to a <?110> direction and have a length of 1 mm. A midpoint of the first line corresponds to the center of gravity of the observed surface. The second line and the third line are distant from the first line by 300 ?m in a <001> direction and a <00?1> direction, respectively.
    Type: Application
    Filed: September 14, 2018
    Publication date: July 9, 2020
    Applicants: Sumitomo Electric Industries, Ltd., SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Natsuo TATSUMI, Yoshiki NISHIBAYASHI, Takuya NOHARA, Akihiko UEDA, Yutaka KOBAYASHI
  • Patent number: 10697058
    Abstract: In an X-ray topography image for a crystal growth main surface of a single-crystal diamond, a group of crystal defect points are gathered, each of the crystal defect points being a tip point of a crystal defect line reaching the crystal growth main surface, the crystal defect line representing a line in which a crystal defect exists. Further, in the single-crystal diamond, a plurality of crystal defect line-like gathered regions exist in parallel. In the plurality of crystal defect line-like gathered regions, groups of crystal defect points are gathered to extend in the form of lines in a direction angled by not more than 30° relative to one arbitrarily specified direction. Accordingly, a single-crystal diamond is provided which is used suitably for a cutting tool, a polishing tool, an optical component, an electronic component, a semiconductor material, and the like.
    Type: Grant
    Filed: July 22, 2015
    Date of Patent: June 30, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Natsuo Tatsumi, Yoshiki Nishibayashi, Hitoshi Sumiya
  • Publication number: 20200181800
    Abstract: A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.
    Type: Application
    Filed: January 29, 2020
    Publication date: June 11, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Kazuo Nakamae
  • Patent number: 10584428
    Abstract: A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.
    Type: Grant
    Filed: August 7, 2015
    Date of Patent: March 10, 2020
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Kazuo Nakamae
  • Patent number: 10569317
    Abstract: A single-crystal diamond includes a pair of main surfaces facing each other, an impurity concentration being changed along a first direction in each of the main surfaces.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: February 25, 2020
    Assignees: Sumitomo Electric Industries, Ltd., Sumitomo Electric Hardmetal Corp.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Takuya Nohara, Yutaka Kobayashi, Akihiko Ueda
  • Publication number: 20200040446
    Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.
    Type: Application
    Filed: October 16, 2019
    Publication date: February 6, 2020
    Applicant: Sumitomo Electric Industries, Ltd.
    Inventors: Takuji Okahisa, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Natsuo Tatsumi
  • Patent number: 10487395
    Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: November 26, 2019
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Takuji Okahisa, Yoshiyuki Yamamoto, Yoshiki Nishibayashi, Natsuo Tatsumi
  • Publication number: 20190218685
    Abstract: In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than ?5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.
    Type: Application
    Filed: March 20, 2019
    Publication date: July 18, 2019
    Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Akihiko Ueda, Yutaka Kobayashi
  • Patent number: 10316430
    Abstract: Single crystal diamond of which hardness and chipping resistance have been improved in a balanced manner, a method for manufacturing the single crystal diamond, and a tool containing the diamond are provided. Single crystal diamond contains nitrogen atoms, and a ratio of the number of isolated substitutional nitrogen atoms in the single crystal diamond to the total number of nitrogen atoms in the single crystal diamond is not lower than 0.02% and lower than 40%.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: June 11, 2019
    Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Akihiko Ueda, Yutaka Kobayashi
  • Patent number: 10287708
    Abstract: In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than ?5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: May 14, 2019
    Assignees: SUMITOMO ELECTRIC INDUSTRIES, LTD., SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Yoshiki Nishibayashi, Natsuo Tatsumi, Hitoshi Sumiya, Akihiko Ueda, Yutaka Kobayashi
  • Publication number: 20190031515
    Abstract: Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.
    Type: Application
    Filed: January 18, 2017
    Publication date: January 31, 2019
    Inventors: Takuya Nohara, Natsuo Tatsumi, Yoshiki Nishibayashi, Hitoshi Sumiya, Yutaka Kobayashi, Akihiko Ueda