Patents by Inventor Neal V. Lafferty

Neal V. Lafferty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9335626
    Abstract: A design level compatible with a sidewall image transfer process employs an alternating grid of mandrel-type line tracks and non-mandrel-type line tracks. Target structure design shapes are formed such that all vertices of the target structure design shapes are on the grid. The target structure design shapes are classified as mandrel-type design shapes and non-mandrel-type design shapes depending on the track type of the overlapping line tracks for lengthwise portions. All mandrel-type line tracks and straps of the mandrel-type design shapes less lateral strap regions of the non-mandrel-type design shapes collectively form mandrel design shapes, which can be employed to generate a first lithographic mask. Sidewall design shapes are generated from the mandrel design shapes. Blocking shapes for a second lithographic mask can be generated by selecting all areas that are not included in the target structure design shapes or the sidewall design shapes.
    Type: Grant
    Filed: August 7, 2013
    Date of Patent: May 10, 2016
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Neal V. Lafferty, Lars W. Liebmann
  • Publication number: 20150046888
    Abstract: A design level compatible with a sidewall image transfer process employs an alternating grid of mandrel-type line tracks and non-mandrel-type line tracks. Target structure design shapes are formed such that all vertices of the target structure design shapes are on the grid. The target structure design shapes are classified as mandrel-type design shapes and non-mandrel-type design shapes depending on the track type of the overlapping line tracks for lengthwise portions. All mandrel-type line tracks and straps of the mandrel-type design shapes less lateral strap regions of the non-mandrel-type design shapes collectively form mandrel design shapes, which can be employed to generate a first lithographic mask. Sidewall design shapes are generated from the mandrel design shapes. Blocking shapes for a second lithographic mask can be generated by selecting all areas that are not included in the target structure design shapes or the sidewall design shapes.
    Type: Application
    Filed: August 7, 2013
    Publication date: February 12, 2015
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Neal V. Lafferty, Lars W. Liebmann
  • Patent number: 8716133
    Abstract: A three photomask image transfer method. The method includes using a first photomask, defining a set of mandrels on a hardmask layer on a substrate; forming sidewall spacers on sidewalls of the mandrels, the sidewall spacers spaced apart; removing the set of mandrels; using a second photomask, removing regions of the sidewall spacers forming trimmed sidewall spacers and defining a pattern of first features; forming a pattern transfer layer on the trimmed sidewall spacers and the hardmask layer not covered by the trimmed sidewall spacers; using a third photomask, defining a pattern of second features in the transfer layer, at least one of the second features abutting at least one feature of the pattern of first features; and simultaneously transferring the pattern of first features and the pattern of second features into the hardmask layer thereby forming a patterned hardmask layer.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: May 6, 2014
    Assignee: International Business Machines Corporation
    Inventors: Shyng-Tsong Chen, Ryan O. Jung, Neal V. Lafferty, Yunpeng Yin
  • Publication number: 20140057436
    Abstract: A three photomask image transfer method. The method includes using a first photomask, defining a set of mandrels on a hardmask layer on a substrate; forming sidewall spacers on sidewalls of the mandrels, the sidewall spacers spaced apart; removing the set of mandrels; using a second photomask, removing regions of the sidewall spacers forming trimmed sidewall spacers and defining a pattern of first features; forming a pattern transfer layer on the trimmed sidewall spacers and the hardmask layer not covered by the trimmed sidewall spacers; using a third photomask, defining a pattern of second features in the transfer layer, at least one of the second features abutting at least one feature of the pattern of first features; and simultaneously transferring the pattern of first features and the pattern of second features into the hardmask layer thereby forming a patterned hardmask layer.
    Type: Application
    Filed: August 23, 2012
    Publication date: February 27, 2014
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Shyng-Tsong Chen, Ryan O. Jung, Neal V. Lafferty, Yunpeng Yin