Patents by Inventor Neha Sakhuja

Neha Sakhuja has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Heterostructure semiconductor, chemiresistive gas sensor made thereof, and method of fabrication thereof
    Patent number: 12265046
    Abstract: An example heterostructure semiconductor for sensing a gas comprises a substrate made of nanosheets of a compound of a first metal, wherein the compound of the first metal is sensitive to the gas to be sensed; one or more 1-Dimensional (1D) components fabricated on a surface of the substrate, the 1D components comprising a compound of a second metal, wherein the compound of the second metal is selective to the gas to be sensed; and a 2-Dimensional (2D) layer formed on the surface of the substrate in portions excluding the 1D components, wherein the 2D layer comprises compounds of the first and second metal. Method of fabrication of the heterostructure semiconductor and a chemiresistive sensor made thereof are also disclosed.
    Type: Grant
    Filed: August 10, 2021
    Date of Patent: April 1, 2025
    Assignee: INDIAN INSTITUTE OF SCIENCE
    Inventors: Neha Sakhuja, Ravindra Kumar Jha, Ranajit Sai, Navakanta Bhat
  • HETEROSTRUCTURE SEMICONDUCTOR, CHEMIRESISTIVE GAS SENSOR MADE THEREOF, AND METHOD OF FABRICATION THEREOF
    Publication number: 20220042941
    Abstract: An example heterostructure semiconductor for sensing a gas comprises a substrate made of nanosheets of a compound of a first metal, wherein the compound of the first metal is sensitive to the gas to be sensed; one or more 1-Dimensional (1D) components fabricated on a surface of the substrate, the 1D components comprising a compound of a second metal, wherein the compound of the second metal is selective to the gas to be sensed; and a 2-Dimensional (2D) layer formed on the surface of the substrate in portions excluding the 1D components, wherein the 2D layer comprises compounds of the first and second metal. Method of fabrication of the heterostructure semiconductor and a chemiresistive sensor made thereof are also disclosed.
    Type: Application
    Filed: August 10, 2021
    Publication date: February 10, 2022
    Inventors: Neha Sakhuja, Ravindra Kumar Jha, Ranajit Sai, Navakanta Bhat