Abstract: Processes for forming a vulcanizable elastomeric formulation are disclosed. The processes include the steps of mixing an elastomer with a vulcanizing agent to form a vulcanizable elastomeric formulation that includes the vulcanizing agent dispersed in the elastomeric compound, wherein the vulcanizing agent includes a cyclododecasulfur compound. A process for forming a vulcanized elastomeric article is also described.

Abstract: An acoustic detector provides a planar arrangement of microphones. A windshield is arranged over the microphones, with a view to reducing the impact of environmental effects. A void is therefore defined over the microphones, and the interior surface of the windshield, which defines the void, is shaped suitably to reduce the potential for acoustic waves propagating within the void to reflect back onto the microphones.

Abstract: A spin orbit torque magnetoresistive random access memory (SOT MRAM) cell includes a magnetic tunnel junction that contains a free layer having two bi-stable magnetization directions, a reference magnetic layer having a fixed magnetization direction, and a tunnel barrier layer located between the free layer and the reference layer, and a nonmagnetic spin Hall effect layer. The spin Hall effect layer may include an alternating stack of beta phase tungsten layers and noble metal nonmagnetic dusting layers. Alternatively or in addition, a hafnium layer may be located between the nonmagnetic spin Hall effect layer and the free layer.

Abstract: A spin orbit torque magnetoresistive random access memory (SOT MRAM) cell includes a magnetic tunnel junction that contains a free layer having two bi-stable magnetization directions, a reference magnetic layer having a fixed magnetization direction, and a tunnel barrier layer located between the free layer and the reference layer, and a nonmagnetic spin Hall effect layer. The spin Hall effect layer may include an alternating stack of beta phase tungsten layers and noble metal nonmagnetic dusting layers. Alternatively or in addition, a hafnium layer may be located between the nonmagnetic spin Hall effect layer and the free layer.

Abstract: An MRAM memory cell is proposed that is based on spin accumulation torque. One embodiment includes a magnetic tunnel junction, a spin accumulation layer connected to the magnetic tunnel junction and a polarization layer connected to the spin accumulation layer. The polarization layer and the spin accumulation layer use spin accumulation to provide a spin accumulation torque on the free magnetic layer of the magnetic tunnel junction to change direction of magnetization of the free magnetic layer.

Abstract: A pulse hub motor having coils (101) and magnets (107) interacting three dimensionally in x, y, and z axes to facilitate both increased power and efficiency through the ability to have more coils (101) in the motor, have each coil (101) perform both push and pull functions, and yet have the flexibility to only use the amount of coils (101) needed for real-time power requirements, whilst regenerating power in both normal drive and braking modes.

Abstract: Processes for forming a vulcanizable elastomeric formulation are disclosed. The processes include the steps of mixing an elastomer with a vulcanizing agent to form a vulcanizable elastomeric formulation that includes the vulcanizing agent dispersed in the elastomeric compound, wherein the vulcanizing agent includes a cyclododecasulfur compound. A process for forming a vulcanized elastomeric article is also described.

Abstract: Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A plurality of read lines are in a read line layer, and a plurality of write lines are in a write line layer. A plurality of spin accumulation lines are in a spin accumulation line layer disposed between a read line layer and a write line layer. Spin accumulation lines may horizontally cross read lines and write lines. A plurality of vertical magnetoresistive random access memory (MRAM) cells may include polarizers and magnetic tunnel junctions. A vertical MRAM cell may include a polarizer coupled between a spin accumulation line and a write line. A vertical MRAM cell may further include a magnetic tunnel junction coupled between a spin accumulation line and a read line, such that the magnetic tunnel junction and the polarizer are vertically aligned.

Abstract: A vulcanizing composition useful for the vulcanization of vulcanizable formulations is disclosed. The vulcanizing composition includes a vulcanizing agent which in turn includes a cyclododecasulfur compound. A cyclododecasulfur compound characterized by a DSC melt point onset of between 155° C. and 167° C. when measured at a DSC heat rate of 20° C./minute is also disclosed.

Abstract: A computer-implemented a method for authenticating a user includes: displaying, by a computer device, a first user interface on a display; receiving, by the computer device, user input defining a first pattern; displaying, by the computer device, a second pattern on the display, wherein the second pattern is different than the first pattern; comparing, by the computer device, the first pattern to a predefined pattern; and based on the comparing, the computer device performing one of: re-displaying the first user interface when the first pattern does not match the predefined pattern; and displaying a second user interface when the first pattern does match the predefined pattern.

Abstract: An MRAM memory cell is proposed that is based on spin accumulation torque. One embodiment includes a magnetic tunnel junction, a spin accumulation layer connected to the magnetic tunnel junction and a polarization layer connected to the spin accumulation layer. The polarization layer and the spin accumulation layer use spin accumulation to provide a spin accumulation torque on the free magnetic layer of the magnetic tunnel junction to change direction of magnetization of the free magnetic layer.

Abstract: A method for managing a content overlay. The method included a processor identifying a first image and a second image from an augmented reality (AR) device. The method further includes identifying a first element of interest within the first image. The method further includes associating a corresponding first AR content overlay for the first element of interest. The method further includes determining one or more differences between the first image and the second image, wherein the second image includes at least the first element of interest. The method further includes modifying a position of at least the first AR content overlay based, at least in part, on the one or more differences between the first image and the second image.

Abstract: Proposed is a display control system for an augmented reality, AR, display system, the AR display system comprising a transparent display area adapted to augment an object or scene viewable through the transparent display area by displaying a visual element in the transparent display area. The display control system comprises: a focal point detection unit adapted to determine a point of focus of a user; and a processing unit adapted to determine an offset distance by which the determined point of focus of the user is spaced from the transparent display area, and to generate a control signal for modifying the transparency of the visual element based on the determined offset distance.

Abstract: A vulcanizing composition useful for the vulcanization of vulcanizable formulations is disclosed. The vulcanizing composition includes a vulcanizing agent which in turn includes a cyclododecasulfur compound. A cyclododecasulfur compound characterized by a DSC melt point onset of between 155° C. and 167° C. when measured at a DSC heat rate of 20° C./minute is also disclosed.

Abstract: A method and apparatus for deterministically switching a free layer in a spin orbit torque magnetoresistive random access memory (SOT-MRAM) cell is disclosed herein. In one embodiment, an SOT-MRAM memory cell is provided. The SOT-MRAM memory cell includes a magnetic tunnel junction, a ferromagnetic bias layer, and an antiferromagnetic layer. The magnetic tunnel junction includes a free layer having primarily two bi-stable magnetization directions, a reference layer having a fixed magnetization direction, and an insulating tunnel barrier layer positioned between the free layer and the reference layer. The ferromagnetic bias layer is configured to provide spin orbit torque via anomalous Hall effect and simultaneously configured to provide a magnetic bias field on the free layer to achieve deterministic switching. The antiferromagnetic layer is positioned below the ferromagnetic bias layer and is configured to pin a magnetization direction of the ferromagnetic bias layer in a predetermined direction.

Abstract: A system for generating an overlay display comprises an overlay display, a camera and a processor connected to the overlay display and the camera. The overlay display is arranged to overlay an output on a background, the camera is arranged to detect the background, and the processor is arranged to receive a desired color for the output, determine the actual color of the background, and calculate the output color from the desired color and the actual color of the background.

Abstract: A method for managing a content overlay. The method included a processor identifying a first image and a second image from an augmented reality (AR) device. The method further includes identifying a first element of interest within the first image. The method further includes associating a corresponding first AR content overlay for the first element of interest. The method further includes determining one or more differences between the first image and the second image, wherein the second image includes at least the first element of interest. The method further includes modifying a position of at least the first AR content overlay based, at least in part, on the one or more differences between the first image and the second image.

Abstract: The present disclosure generally relates to a SOT-MRAM cell that has a spin Hall effect layer and a magnetic tunnel junction. The magnetic tunnel junction is disposed at an edge of the spin Hall effect layer. In order to write the cell, current is applied through the spin Hall effect layer to create spin accumulation of z-polarized spins under the free layer due to the spin Hall effect. The spins exert a spin torque on the free layer via spin diffusion. Based upon the design, the SOT-MRAM cell has deterministic switching of the perpendicular free layer with the spin Hall effect layer without application of an external magnetic field.

Abstract: A method and apparatus for deterministically switching a free layer in a spin orbit torque magnetoresistive random access memory (SOT-MRAM) cell is disclosed herein. In one embodiment, an SOT-MRAM memory cell is provided. The SOT-MRAM memory cell includes a magnetic tunnel junction, a ferromagnetic bias layer, and an antiferromagnetic layer. The magnetic tunnel junction includes a free layer having primarily two bi-stable magnetization directions, a reference layer having a fixed magnetization direction, and an insulating tunnel barrier layer positioned between the free layer and the reference layer. The ferromagnetic bias layer is configured to provide spin orbit torque via anomalous Hall effect and simultaneously configured to provide a magnetic bias field on the free layer to achieve deterministic switching. The antiferromagnetic layer is positioned below the ferromagnetic bias layer and is configured to pin a magnetization direction of the ferromagnetic bias layer in a predetermined direction.

Abstract: A charging module for an electric vehicle includes an enclosure having a plurality of sides and an at least partially open top, the enclosure defining a hollow interior; a conductor rail disposed in the at least partially open top of the enclosure, the conductor rail being configured to be placed in electric communication with an electrical power source; and at least one external insulator disposed in the at least partially open top of the enclosure adjacent to the conductor rail. The at least one external insulator is disposed between the conductor rail and at least one of the sides of the enclosure. The conductor rail is configured to transmit electrical energy from the electrical power source to the electric vehicle.