Patents by Inventor Nestor Javier Escalera

Nestor Javier Escalera has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030022466
    Abstract: A semiconductor structure includes a monocrystalline silicon substrate, a buffer layer including an amorphous oxide material overlying the monocrystalline silicon substrate and a monocrystalline perovskite oxide material overlying the amorphous oxide material and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. The semiconductor structure further includes power amplifier and associated linearization circuit for the power amplifier.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Nestor Javier Escalera, Rudy M. Emrick, Bruce Allen Bosco
  • Publication number: 20030020121
    Abstract: A semiconductor structure for a high frequency monolithic switch matrix includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and a high frequency semiconductor integrated formed in and over the monocrystalline compound semiconductor material having one or more input ports and one or more output ports. The high frequency semiconductor integrated circuit also includes a high frequency switch circuit that is electrically coupled to a switch driver control circuit that is fabricated on the monocrystalline compound semiconductor material and which provides the DC signals required to control the high frequency circuit.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Stephen Kent Rockwell, John E. Holmes, Nestor Javier Escalera, Steven James Franson
  • Publication number: 20030020069
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: MOTOROLA, INC.
    Inventors: John E. Holmes, Bruce Allen Bosco, Rudy M. Emrick, Steven James Franson, Nestor Javier Escalera, Stephen Kent Rockwell
  • Publication number: 20030020137
    Abstract: Various semiconductor device structures that include an inductor or balun can be formed using a semiconductor structure having a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and/or other types of material such as metals and non-metals.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: MOTORLA, INC.
    Inventors: Bruce Allen Bosco, Rudy M. Emrick, Steven James Franson, Nestor Javier Escalera
  • Publication number: 20030020107
    Abstract: Various semiconductor device structures that include one or more capacitors can be formed using a semiconductor structure having a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and/or other types of material such as metals and non-metals.
    Type: Application
    Filed: July 25, 2001
    Publication date: January 30, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Bruce Allen Bosco, Nestor Javier Escalera, Rudy M. Emrick, John E. Holmes, Steven James Franson
  • Publication number: 20030015707
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Radio frequency, optical, logic and other circuits in both silicon and compound semiconductor materials may be combined and interconnected in a single semiconductor structure.
    Type: Application
    Filed: July 17, 2001
    Publication date: January 23, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Bruce Allen Bosco, Rudy M. Emrick, Steven James Franson, Nestor Javier Escalera, Bryan K. Farber
  • Publication number: 20030015709
    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.
    Type: Application
    Filed: July 17, 2001
    Publication date: January 23, 2003
    Applicant: MOTOROLA, INC.
    Inventors: Rudy M. Emrick, Bruce Allen Bosco, Stephen Kent Rockwell, Nestor Javier Escalera