Patents by Inventor Nicholas J. Kolias

Nicholas J. Kolias has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210367055
    Abstract: A semiconductor device having a substrate, a pair of Group III-Nitride layers on the substrate forming: a heterojunction with a 2 Dimensional Electron Gas (2DEG) channel in a lower one of the pair of Group III-Nitride layers, a cap beryllium doped Group III-Nitride layer on the upper one of the pair of Group III-Nitride layers; and an electrical contact in Schottky contact with a portion of the cap beryllium doped, Group III-Nitride layer.
    Type: Application
    Filed: May 22, 2020
    Publication date: November 25, 2021
    Applicant: Raytheon Company
    Inventors: Kiuchul Hwang, Brian D. Schultz, John Logan, Robert E. Leoni, Nicholas J. Kolias
  • Publication number: 20210320045
    Abstract: A semiconductor structure having: a crystalline substrate; a single crystalline semiconductor layer grown on the substrate; and a heat generating semiconductor device formed on a portion of the single crystalline layer. The substrate has an aperture in a selected portion thereof disposed in regions in the semiconductor layer under the heat generating device the aperture extending from a bottom portion of the substrate to the single crystalline semiconductor layer. Single crystalline or polycrystalline, thermal conductive material is disposed in the aperture, such material filling the aperture and extending from the bottom of the substrate, to and in direct contact with, the semiconductor layer.
    Type: Application
    Filed: April 9, 2020
    Publication date: October 14, 2021
    Applicant: Raytheon Company
    Inventors: Kiuchul Hwang, Nicholas J. Kolias
  • Patent number: 9030268
    Abstract: A power combiner/divider having a waveguide, a plurality of amplifiers disposed on a supporting structure, a plurality of probes, each one having a first end electrically coupled to an output of a corresponding one of the plurality of amplifiers and a second end projecting outwardly from the supporting structure and into the waveguide. The probes are disposed in a common region of the waveguide. The region has a common electric field maximum within the waveguide. A first portion of the probes proximate the sidewalls have lengths different from a second portion of the probes disposed in a region distal from the sidewalls of the waveguide. The waveguide is supported by the support structure. The power combiner is a monolithic microwave integrated circuit structure.
    Type: Grant
    Filed: May 9, 2011
    Date of Patent: May 12, 2015
    Assignee: Raytheon Company
    Inventors: Nicholas J. Kolias, Kenneth W. Brown
  • Patent number: 9019036
    Abstract: A power combiner/divider having a waveguide, a plurality of amplifiers disposed on a supporting structure, a plurality of probes, each one having a first end electrically coupled to an output of a corresponding one of the plurality of amplifiers and a second end projecting outwardly from the supporting structure and into the waveguide. The probes are disposed in a common region of the waveguide. The region has a common electric field maximum within the waveguide. A first portion of the probes proximate the sidewalls have lengths different from a second portion of the probes disposed in a region distal from the sidewalls of the waveguide. The waveguide is supported by the support structure. The power combiner is a monolithic microwave integrated circuit structure.
    Type: Grant
    Filed: May 9, 2011
    Date of Patent: April 28, 2015
    Assignee: Raytheon Company
    Inventors: Nicholas J. Kolias, Gabriel M. Rebeiz
  • Patent number: 8963658
    Abstract: A structure having a coplanar waveguide transistor; and a microwave section, coupled to the transistor, having: a strip conductor coplanar with the electrodes of the coplanar waveguide transistor and a ground plane conductor disposed under the strip conductor.
    Type: Grant
    Filed: September 21, 2010
    Date of Patent: February 24, 2015
    Assignee: Raytheon Company
    Inventors: James J. Chen, Nicholas J. Kolias, Francois Y. Colomb
  • Patent number: 8344359
    Abstract: A semiconductor structure having a transistor and a thermo electronic structure. The transistor has a control electrode for controlling a flow of carriers through a semiconductor layer between a pair of electrodes. The thermo electronic structure has a first portion disposed on at least one of the pair of electrodes and a second portion disposed over a region of the semiconductor layer proximate the control electrode between the control electrode and said at least one of the pair of electrode. The thermo electronic structure extends from the first portion to the second portion for removing heat generated heat from said region in the semiconductor layer.
    Type: Grant
    Filed: April 9, 2010
    Date of Patent: January 1, 2013
    Assignee: Raytheon Company
    Inventors: John P. Bettencourt, Nicholas J. Kolias
  • Publication number: 20120068793
    Abstract: A structure having a coplanar waveguide transistor; and a microwave section, coupled to the transistor, having: a strip conductor coplanar with the electrodes of the coplanar waveguide transistor and a ground plane conductor disposed under the strip conductor.
    Type: Application
    Filed: September 21, 2010
    Publication date: March 22, 2012
    Applicant: Raytheon Company
    Inventors: James J. Chen, Nicholas J. Kolias, Francois Y. Colomb
  • Publication number: 20120007650
    Abstract: A power combiner/divider having a waveguide, a plurality of amplifiers disposed on a supporting structure, a plurality of probes, each one having a first end electrically coupled to an output of a corresponding one of the plurality of amplifiers and a second end projecting outwardly from the supporting structure and into the waveguide. The probes are disposed in a common region of the waveguide. The region has a common electric field maximum within the waveguide. A first portion of the probes proximate the sidewalls have lengths different from a second portion of the probes disposed in a region distal from the sidewalls of the waveguide. The waveguide is supported by the support structure. The power combiner is a monolithic microwave integrated circuit structure.
    Type: Application
    Filed: May 9, 2011
    Publication date: January 12, 2012
    Applicant: Raytheon Company
    Inventors: Nicholas J. Kolias, Gabriel M. Rebeiz
  • Publication number: 20110273228
    Abstract: A power combiner/divider having a waveguide, a plurality of amplifiers disposed on a supporting structure, a plurality of probes, each one having a first end electrically coupled to an output of a corresponding one of the plurality of amplifiers and a second end projecting outwardly from the supporting structure and into the waveguide. The probes are disposed in a common region of the waveguide. The region has a common electric field maximum within the waveguide. A first portion of the probes proximate the sidewalls have lengths different from a second portion of the probes disposed in a region distal from the sidewalls of the waveguide. The waveguide is supported by the support structure. The power combiner is a monolithic microwave integrated circuit structure.
    Type: Application
    Filed: May 9, 2011
    Publication date: November 10, 2011
    Applicant: Raytheon Company
    Inventors: Nicholas J. Kolias, Kenneth W. Brown
  • Publication number: 20110248280
    Abstract: A semiconductor structure having a transistor and a thermo electronic structure. The transistor has a control electrode for controlling a flow of carriers through a semiconductor layer between a pair of electrodes. The thermo electronic structure has a first portion disposed on at least one of the pair of electrodes and a second portion disposed over a region of the semiconductor layer proximate the control electrode between the control electrode and said at least one of the pair of electrode. The thermo electronic structure extends from the first portion to the second portion for removing heat generated heat from said region in the semiconductor layer.
    Type: Application
    Filed: April 9, 2010
    Publication date: October 13, 2011
    Applicant: Raytheon Company
    Inventors: John P. Bettencourt, Nicholas J. Kolias