Patents by Inventor Nickolai S. Belov

Nickolai S. Belov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9391002
    Abstract: Semiconductor sensor chips are provided. In some embodiments, a semiconductor sensor chip can include at least one wire bond pad on one side thereof, at least one bond pad on another, opposite side thereof, and at least one through-silicon via (TSV) extending therebetween and electrically connected to the bond pads on opposite sides of the chip. Each of the bond pads can have a wire attached thereto. In some embodiments, a semiconductor sensor chip can include a pressure sensor, a substrate, and a resistor in a well that provides p-n junction isolation from a body of the substrate. In some embodiments, a semiconductor sensor chip can include a plurality of wire bonds pads with a wire soldered to each of the bond pads. Each of the wires can be soldered with a longitudinal length thereof soldered to its associated bond pad.
    Type: Grant
    Filed: November 21, 2013
    Date of Patent: July 12, 2016
    Assignee: Amphenol Thermometrics, Inc.
    Inventor: Nickolai S. Belov
  • Publication number: 20150276533
    Abstract: A device/method for sensing a physical parameter, including a sensor die and a stress-sensitive circuit. The sensor die includes a semiconductor substrate and a cavity that creates an elastic element that bends in response to the physical parameter exerted on the sensor die. The elastic element includes at least at least one rigid island formed within the cavity, a thin area surrounding the at least one rigid island and having smaller thickness than the rigid island, and at least one stress concentrator at least partially formed in the thin area of the elastic element on the side of the substrate opposite the cavity. The stress-sensitive circuit includes at least one stress-sensitive component formed in the thin area of the elastic element. The at least one stress concentrator increases stress in the locations of the at least one stress-sensitive component resulting in an increase of the device sensitivity to the physical parameter.
    Type: Application
    Filed: May 22, 2015
    Publication date: October 1, 2015
    Inventors: Nickolai S. Belov, Lihua Li, Kim Vu, Dinh Vu
  • Publication number: 20150192487
    Abstract: Low pressure sensors and flow sensors are provided. In some embodiments, a pressure sensor can include a sensor die that includes a substrate and a cavity that is formed in a bottom side of the substrate and that defines an elastic element including a thin diaphragm area and a rigid island. A maximum thickness of the rigid island can be substantially smaller than a thickness of the substrate and can be greater than a thickness of the thin diaphragm area. Side walls of the rigid island can be substantially parallel to one another and can be substantially perpendicular to top and bottom surfaces of the wafer and substantially perpendicular to top and bottom surfaces of the die. The side walls of the at least one rigid island can be formed by wet etching the cavity into the die. The wafer can have an impurity diffused in one or more portions thereof prior to the wet etching such that the one or more portions are doped.
    Type: Application
    Filed: January 8, 2014
    Publication date: July 9, 2015
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Nickolai S. Belov, Lihua Li, Kim Vu, Dinh Vu
  • Publication number: 20150137274
    Abstract: Semiconductor sensor chips are provided. In some embodiments, a semiconductor sensor chip can include at least one wire bond pad on one side thereof, at least one bond pad on another, opposite side thereof, and at least one through-silicon via (TSV) extending therebetween and electrically connected to the bond pads on opposite sides of the chip. Each of the bond pads can have a wire attached thereto. In some embodiments, a semiconductor sensor chip can include a pressure sensor, a substrate, and a resistor in a well that provides p-n junction isolation from a body of the substrate. In some embodiments, a semiconductor sensor chip can include a plurality of wire bonds pads with a wire soldered to each of the bond pads. Each of the wires can be soldered with a longitudinal length thereof soldered to its associated bond pad.
    Type: Application
    Filed: November 21, 2013
    Publication date: May 21, 2015
    Applicant: GENERAL ELECTRIC COMPANY
    Inventor: Nickolai S. Belov
  • Publication number: 20150137277
    Abstract: Semiconductor sensor chips are provided. In some embodiments, a semiconductor sensor chip can include at least one wire bond pad on one side thereof, at least one bond pad on another, opposite side thereof, and at least one through-silicon via (TSV) extending therebetween and electrically connected to the bond pads on opposite sides of the chip. Each of the bond pads can have a wire attached thereto. In some embodiments, a semiconductor sensor chip can include a pressure sensor, a substrate, and a resistor in a well that provides p-n junction isolation from a body of the substrate. In some embodiments, a semiconductor sensor chip can include a plurality of wire bonds pads with a wire soldered to each of the bond pads. Each of the wires can be soldered with a longitudinal length thereof soldered to its associated bond pad.
    Type: Application
    Filed: November 21, 2013
    Publication date: May 21, 2015
    Applicant: GENERAL ELECTRIC COMPANY
    Inventor: Nickolai S. Belov
  • Patent number: 8618934
    Abstract: A system and a method of long-term condition monitoring of structures are based on use of autonomous sensing modules, centers for storing and processing data and software for data analysis. An autonomous sensing module contains a set of sensors for measurements of parameters related to the condition of a monitored structure, a non-volatile memory, a wireless data transfer unit, a controller, a clock circuit, a battery, an energy harvesting device and a power management unit. The autonomous sensing module provides a very long-term (40 years or more) functionality and reliability due to both use of at least near hermetic packages for the controller, the non-volatile memory, the battery, the clock circuit and the power management unit and choosing the duration of periods when the sensing module works in active mode in such a way that the average energy consumed by the autonomous sensing module is fully compensated by the average energy harvested by the energy harvesting device.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: December 31, 2013
    Assignee: Kolos International LLC
    Inventors: Nickolai S Belov, Olga V Belova
  • Publication number: 20100315035
    Abstract: An autonomous power module is a module that supplies electrical power to the electronic devices or systems it is designed to power. It consists of a battery module, energy harvesting module and controller module. The purpose of the autonomous power module is to provide means of supplying electrical power to the electronic devices for prolonged periods of time.
    Type: Application
    Filed: June 9, 2010
    Publication date: December 16, 2010
    Inventors: Nickolai S. Belov, Victor A. Lifton