Abstract: A substrate support includes an electrostatic chuck having an upper surface, and a cover positioned on the electrostatic chuck to cover the upper surface thereof. The cover includes a first face adjacent the upper surface of the electrostatic chuck, a second face for supporting a substrate, and one or more conduits extending through the cover to permit a cooling gas to flow from the second face to the first face. The cover is made from a dielectric material.

Abstract: A method for securing a geographical area encompassing a route. A map of the area is obtained. A weapon is associated with a firing modeling consisting of a probability model of hitting its target when shooting, as a function of the firing distance. Positions of potential shelters of threats on the map are determined by using a trained artificial intelligence device. The modeling is applied for each weapon and potential shelter while relating the shots to the route and summing all the probabilities of hitting its target on each portion of the route. The potential shelters most likely to constitute attack threats along the route are determined. A path is defined in order to address these potential shelters most likely to constitute attack threats.

Abstract: A substrate support includes an electrostatic chuck having an upper surface, and a cover positioned on the electrostatic chuck to cover the upper surface thereof. The cover includes a first face adjacent the upper surface of the electrostatic chuck, a second face for supporting a substrate, and one or more conduits extending through the cover to permit a cooling gas to flow from the second face to the first face. The cover is made from a dielectric material.

Abstract: A method of plasma etching one or more features in a silicon substrate includes performing a main etch using a cyclical etch process in which a deposition step and an etch step are alternately repeated, and performing an over etch to complete the plasma etching of the features. The over etch includes one or more etch steps of a first kind and one or more etch steps of a second kind, each of the etch steps of the first and second kind include etching by ion bombardment of the silicon substrate. The ion bombardment during the one or more etch steps of the second kind has an inward inclination with respect to ion bombardment during the one or more etch steps of the first kind.

Abstract: A method of plasma etching one or more features in a silicon substrate includes performing a main etch using a cyclical etch process in which a deposition step and an etch step are alternately repeated, and performing an over etch to complete the plasma etching of the features. The over etch includes one or more etch steps of a first kind and one or more etch steps of a second kind, each of the etch steps of the first and second kind include etching by ion bombardment of the silicon substrate. The ion bombardment during the one or more etch steps of the second kind has an inward inclination with respect to ion bombardment during the one or more etch steps of the first kind.

Abstract: The present invention provides apparatus for controlling the operation of plasma etching a semiconductor substrate by an alternating etching method, the apparatus comprising: a process chamber (1) in which said substrate (2) is processed, means for generating a plasma (6); at least one first window (7) formed in a first wall (8) of said chamber (1) facing the surface (2a) to be etched of said substrate (2); at least one second window (10) formed in a second wall (11) of said chamber (1) lying in a plane different from said first wall (8); first means (18) coupled to said second window (10) to detect a light signal (17) relating to a selected wavelength emitted by said plasma (6); means (13, 15) for emitting a monochromatic light signal (14) through said first window (7) towards said surface (2a) in a direction (9) substantially perpendicular to said surface (2a) in such a manner that said incident signal (14a) is reflected on said surface (2a); second means (16) for detecting said reflected signal (14b); a

Abstract: The present invention provides apparatus for controlling the operation of plasma etching a semiconductor substrate by an alternating etching method, the apparatus comprising: a process chamber (1) in which said substrate (2) is processed, means for generating a plasma (6); at least one first window (7) formed in a first wall (8) of said chamber (1) facing the surface (2a) to be etched of said substrate (2); at least one second window (10) formed in a second wall (11) of said chamber (1) lying in a plane different from said first wall (8); first means (18) coupled to said second window (10) to detect a light signal (17) relating to a selected wavelength emitted by said plasma (6); means (13, 15) for emitting a monochromatic light signal (14) through said first window (7) towards said surface (2a) in a direction (9) substantially perpendicular to said surface (2a) in such a manner that said incident signal (14a) is reflected on said surface (2a); second means (16) for detecting said reflected signal (14b); a

Abstract: The present invention consists in a method of plasma treatment of a semiconductor substrate in a process chamber connected to a vacuum line via a valve, said treatment including a plurality of cycles comprising at least one etching step during which an etching gas is introduced alternating with at least one passivation step during which a passivation gas is introduction into said chamber, which method includes the following operations: (a) a reference pressure Pref is defined at which it is wished to effect the treatment, (b) the position of the valve is fixed during the first etching step, (c) the pressure in the process chamber is allowed to stabilize during n cycles, (d) the pressure in the process chamber is measured during the etching step during m cycles, with m at least equal to 2, and an average pressure value Pc is calculated from the measurements effected, (e) after n+m cycles, the position of the valve is corrected with a view to obtaining a pressure in the process chamber that approximates the

Abstract: The present invention consists in a method of plasma treatment of a semiconductor substrate in a process chamber connected to a vacuum line via a valve, said treatment including a plurality of cycles comprising at least one etching step during which an etching gas is introduced alternating with at least one passivation step during which a passivation gas is introduction into said chamber, which method includes the following operations: (a) a reference pressure Pref is defined at which it is wished to effect the treatment, (b) the position of the valve is fixed during the first etching step, (c) the pressure in the process chamber is allowed to stabilize during n cycles, (d) the pressure in the process chamber is measured during the etching step during m cycles, with m at least equal to 2, and an average pressure value Pc is calculated from the measurements effected, (e) after n+m cycles, the position of the valve is corrected with a view to obtaining a pressure in the process chamber that approximates th

Abstract: The present invention provides apparatus for controlling the operation of plasma etching a semiconductor substrate by an alternating etching method, the apparatus comprising: a process chamber (1) in which said substrate (2) is processed, means for generating a plasma (6); at least one first window (7) formed in a first wall (8) of said chamber (1) facing the surface (2a) to be etched of said substrate (2); at least one second window (10) formed in a second wall (11) of said chamber (1) lying in a plane different from said first wall (8); first means (18) coupled to said second window (10) to detect a light signal (17) relating to a selected wavelength emitted by said plasma (6); means (13, 15) for emitting a monochromatic light signal (14) through said first window (7) towards said surface (2a) in a direction (9) substantially perpendicular to said surface (2a) in such a manner that said incident signal (14a) is reflected on said surface (2a); second means (16) for detecting said reflected signal (1