Patents by Inventor Nicolas Loubet

Nicolas Loubet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10205022
    Abstract: A method of making a semiconductor device includes forming a first spacer for at least one gate stack on a first semiconductor material layer, and forming a respective second spacer for each of source and drain regions adjacent the at least one gate. Each second spacer has a pair of opposing sidewalls and an end wall coupled thereto. The method includes filling the source and drain regions with a second semiconductor material while the first and second spacers provide confinement.
    Type: Grant
    Filed: November 12, 2015
    Date of Patent: February 12, 2019
    Assignee: STMicroelectronics, Inc.
    Inventors: Nicolas Loubet, Pierre Morin
  • Patent number: 10204982
    Abstract: A method for forming a semiconductor device includes forming a mask layer on a stressed semiconductor layer of a stressed, semiconductor-on-insulator wafer. An isolation trench bounding the stressed semiconductor layer is formed. The isolation trench extends through the mask layer and into the SOI wafer past an oxide layer thereof. A dielectric body is formed in the isolation trench. A relaxation reduction liner is formed on the dielectric body and on an adjacent sidewall of the stressed semiconductor layer. The mask layer on the stressed semiconductor layer is removed.
    Type: Grant
    Filed: October 8, 2013
    Date of Patent: February 12, 2019
    Assignee: STMicroelectronics, Inc.
    Inventors: Pierre Morin, Qing Liu, Nicolas Loubet
  • Patent number: 10199392
    Abstract: A semiconductor material is patterned to define elongated fins insulated from an underlying substrate. A polysilicon semiconductor material is deposited over and in between the elongated fins, and is patterned to define elongated gates extending to perpendicularly cross over the elongated fins at a transistor channel. Sidewall spacers are formed on side walls of the elongated gates. Portions of the elongated fins located between the elongated gates are removed, along with the underlying insulation, to expose the underlying substrate. One or more semiconductor material layers are then epitaxially grown from the underlying substrate at locations between the elongated gates. The one or more semiconductor material layers may include an undoped epi-layer and an overlying doped epi-layer. The epitaxial material defines a source or drain of the transistor.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: February 5, 2019
    Assignee: STMICROELECTRONICS, INC.
    Inventors: Ronald K. Sampson, Nicolas Loubet
  • Publication number: 20190035913
    Abstract: A substrate structure having a set of nanosheet layers and a set of sacrificial layers stacked upon a substrate is received and a dummy gate is formed upon the nanosheet layers and the sacrificial layers. A portion of a subset of the set of sacrificial layers and a subset of the set of nanosheet layers is etched. A portion of a subset of the subset of sacrificial layers is etched to create divots within the sacrificial layers. A divot fill layer is deposited. The divot fill layer is etched to form an inner spacer between the nanosheet layers. A source/drain region is formed adjacent to the nanosheet layers and the divots. A remaining portion of the subset of the sacrificial layers is removed. The subset of the nanosheet layers is etched to a desired channel thickness producing faceted surfaces between the subset of nanosheet layers and the inner spacer.
    Type: Application
    Filed: May 16, 2018
    Publication date: January 31, 2019
    Applicant: International Business Machines Corporation
    Inventors: Kangguo Cheng, Nicolas Loubet, Ruilong Xie, Tenko Yamashita, Chun-Chen Yeh
  • Publication number: 20190035911
    Abstract: A substrate structure having a set of nanosheet layers and a set of sacrificial layers stacked upon a substrate is received and a dummy gate is formed upon the nanosheet layers and the sacrificial layers. A portion of a subset of the set of sacrificial layers and a subset of the set of nanosheet layers is etched. A portion of a subset of the subset of sacrificial layers is etched to create divots within the sacrificial layers. A divot fill layer is deposited. The divot fill layer is etched to form an inner spacer between the nanosheet layers. A source/drain region is formed adjacent to the nanosheet layers and the divots. A remaining portion of the subset of the sacrificial layers is removed. The subset of the nanosheet layers is etched to a desired channel thickness producing faceted surfaces between the subset of nanosheet layers and the inner spacer.
    Type: Application
    Filed: July 25, 2017
    Publication date: January 31, 2019
    Applicant: International Business Machines Corporation
    Inventors: Kangguo Cheng, NICOLAS LOUBET, Ruilong Xie, TENKO YAMASHITA, CHUN-CHEN YEH
  • Publication number: 20190019733
    Abstract: This disclosure relates to a method of forming nanosheet devices including: forming a first and second nanosheet stack on a substrate, the first and the second nanosheet stacks including a plurality of vertically spaced nanosheets disposed on the substrate and separated by a plurality of spacing members, each of the plurality of spacing members including a sacrificial layer and a pair of inner spacers formed on lateral ends of the sacrificial layer; growing a pair of epitaxial regions adjacent to the first and second nanosheet stacks from each of the plurality of nanosheets such that each of the plurality of inner spacers is enveloped by one of the epitaxial regions; covering the first nanosheet stack with a mask; and forming a pair of p-type source/drain regions on the second nanosheet stack, each of the pair of p-type source/drain regions being adjacent to the epitaxial regions on the second nanosheet stack.
    Type: Application
    Filed: September 18, 2018
    Publication date: January 17, 2019
    Inventors: Ruilong Xie, Cheng Chi, Pietro Montanini, Tenko Yamashita, Nicolas Loubet
  • Patent number: 10177255
    Abstract: A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, and source and drain regions adjacent the channel region to generate shear and normal strain on the channel region. A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, source and drain regions adjacent the channel region, and a gate over the channel region. The fin may be canted with respect to the source and drain regions to generate shear and normal strain on the channel region.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: January 8, 2019
    Assignee: STMICROELECTRONICS, INC.
    Inventors: Pierre Morin, Nicolas Loubet
  • Patent number: 10170546
    Abstract: Channel-to-substrate leakage in a FinFET device is prevented by inserting an insulating layer between the semiconducting channel and the substrate during fabrication of the device. Similarly, source/drain-to-substrate leakage in a FinFET device is prevented by isolating the source/drain regions from the substrate by inserting an insulating layer between the source/drain regions and the substrate. Forming such an insulating layer isolates the conduction path from the substrate both physically and electrically, thus preventing current leakage. In an array of semiconducting fins made up of a multi-layer stack, the bottom material is removed thus yielding a fin array that is suspended above the silicon surface. A resulting gap underneath the remaining top fin material is then filled with oxide to better support the fins and to isolate the array of fins from the substrate.
    Type: Grant
    Filed: January 17, 2018
    Date of Patent: January 1, 2019
    Assignee: STMicroelectronics, Inc.
    Inventors: Nicolas Loubet, Prasanna Khare
  • Patent number: 10170520
    Abstract: Fabricating a negative capacitance steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin, a source/drain, a gate, a cap disposed upon the gate, a trench contact disposed upon the source/drain, and an inter-layer dielectric. A source/drain recess is formed in the inter-layer dielectric extending to the trench contact, and a gate recess is formed in the inter-layer dielectric extending to the gate. A ferroelectric material is deposited within the gate recess, and a source/drain contact is formed within the source/drain recess. A gate contact is formed within the gate recess, and a contact recess is formed in a portion of the source/drain contact. A bi-stable resistive system (BRS) material is formed in the contact recess, and a metallization layer contact is formed upon the BRS material. A portion of the source/drain contact, the BRS material, and a portion of the metallization layer contact forms a reversible switch.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: January 1, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Julien Frougier, Nicolas Loubet, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng
  • Patent number: 10170475
    Abstract: An improved transistor with channel epitaxial silicon. In one aspect, a method of fabrication includes: forming a gate stack structure on an epitaxial silicon region disposed on a substrate, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; and growing a raised epitaxial source and drain from the substrate, the raised epitaxial source and drain in contact with the epitaxial silicon region and the gate stack structure. For a SRAM device, further: removing an epitaxial layer in contact with the silicon substrate and the raised source and drain and to which the epitaxial silicon region is coupled leaving a space above the silicon substrate and under the raised epitaxial source and drain; and filling the space with an insulating layer and isolating the raised epitaxial source and drain and a channel of the transistor from the silicon substrate.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: January 1, 2019
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, STMICROELECTRONICS, INC.
    Inventors: Stephane Allegret-Maret, Kangguo Cheng, Bruce Doris, Prasanna Khare, Qing Liu, Nicolas Loubet
  • Publication number: 20180350808
    Abstract: A multi-fin FINFET device may include a substrate and a plurality of semiconductor fins extending upwardly from the substrate and being spaced apart along the substrate. Each semiconductor fin may have opposing first and second ends and a medial portion therebetween, and outermost fins of the plurality of semiconductor fins may comprise an epitaxial growth barrier on outside surfaces thereof. The FINFET may further include at least one gate overlying the medial portions of the semiconductor fins, a plurality of raised epitaxial semiconductor source regions between the semiconductor fins adjacent the first ends thereof, and a plurality of raised epitaxial semiconductor drain regions between the semiconductor fins adjacent the second ends thereof.
    Type: Application
    Filed: July 30, 2018
    Publication date: December 6, 2018
    Inventors: Qing Liu, Prasanna Khare, Nicolas Loubet
  • Patent number: 10141424
    Abstract: Method of manufacturing a structure with semiconducting bars suitable for forming one at least one transistor channel, including the following steps: a) make a semiconducting structure, composed of an alternation of first bars based on a first material and second bars based on a second material, the second material being a semiconducting material, then b) remove exposed portions of the structure based on the first material through an opening in a mask formed on the structure, the removal being made by selective etching in the opening of the first material relative to the second material, so as to expose a space around the second bars, then c) grow a given semiconducting material (25) around the second bars (6c) in the opening, the given semiconducting material having a mesh parameter different from the mesh parameter of the second material (7) so as to induce a strain on the sheaths based on the given semiconducting material.
    Type: Grant
    Filed: May 24, 2017
    Date of Patent: November 27, 2018
    Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, IBM CORPORATION
    Inventors: Remi Coquand, Emmanuel Augendre, Nicolas Loubet, Shay Reboh
  • Patent number: 10134895
    Abstract: The presence of a facet or a void in an epitaxially grown crystal indicates that crystal growth has been interrupted by defects or by certain material boundaries. Faceting can be suppressed during epitaxial growth of silicon compounds that form source and drain regions of strained silicon transistors. It has been observed that faceting can occur when epitaxial layers of certain silicon compounds are grown adjacent to an oxide boundary, but faceting does not occur when the epitaxial layer is grown adjacent to a silicon boundary or adjacent to a nitride boundary. Because epitaxial growth of silicon compounds is often necessary in the vicinity of isolation trenches that are filled with oxide, techniques for suppression of faceting in these areas are of particular interest. One such technique, presented herein, is to line the isolation trenches with SiN to provide a barrier between the oxide and the region in which epitaxial growth is intended.
    Type: Grant
    Filed: December 3, 2012
    Date of Patent: November 20, 2018
    Assignee: STMicroelectronics, Inc.
    Inventors: Nicolas Loubet, Prasanna Khare, Qing Liu
  • Patent number: 10134759
    Abstract: A method for making a semiconductor device may include forming, above a substrate, a plurality of fins, forming a first semiconductor material on sides of a first group of the fins, and forming a second semiconductor material on sides of a second group of the fins. The method may further include forming a dielectric layer overlying the plurality of fins to define first and second groups of nanowires within the dielectric layer, with the first group of nanowires including the first semiconductor material and the second group of nanowires including the second semiconductor material.
    Type: Grant
    Filed: February 18, 2014
    Date of Patent: November 20, 2018
    Assignees: STMICROELECTRONICS, INC., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Nicolas Loubet, James Kuss
  • Patent number: 10134899
    Abstract: The presence of a facet or a void in an epitaxially grown crystal indicates that crystal growth has been interrupted by defects or by certain material boundaries. Faceting can be suppressed during epitaxial growth of silicon compounds that form source and drain regions of strained silicon transistors. It has been observed that faceting can occur when epitaxial layers of certain silicon compounds are grown adjacent to an oxide boundary, but faceting does not occur when the epitaxial layer is grown adjacent to a silicon boundary or adjacent to a nitride boundary. Because epitaxial growth of silicon compounds is often necessary in the vicinity of isolation trenches that are filled with oxide, techniques for suppression of faceting in these areas are of particular interest. One such technique, presented herein, is to line the isolation trenches with SiN to provide a barrier between the oxide and the region in which epitaxial growth is intended.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: November 20, 2018
    Assignee: STMicroelectronics, Inc.
    Inventors: Nicolas Loubet, Prasanna Khare, Qing Liu
  • Publication number: 20180331106
    Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different lattice constants that are grown over a bulk substrate. A first thin, strained, epitaxial layer may be cut to form strain-relieved base structures for fins. The base structures may be constrained in a strained-relieved state. Fin structures may be epitaxially grown in a second layer over the base structures. The constrained base structures can cause higher amounts of strain to form in the epitaxially-grown fins than would occur for non-constrained base structures.
    Type: Application
    Filed: July 13, 2018
    Publication date: November 15, 2018
    Inventors: Pierre Morin, Nicolas Loubet
  • Publication number: 20180323301
    Abstract: A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes providing a stressed silicon-on-insulator (sSOI) wafer comprising a stressed semiconductor layer having first and second laterally adjacent stressed semiconductor portions. The first stressed semiconductor portion defines a first active region. The second stressed semiconductor portion is replaced with an unstressed semiconductor portion. The unstressed semiconductor portion includes a first semiconductor material. The method further includes driving a second semiconductor material into the first semiconductor material of the unstressed semiconductor portion defining a second active region.
    Type: Application
    Filed: July 13, 2018
    Publication date: November 8, 2018
    Inventors: Qing Liu, Nicolas Loubet
  • Publication number: 20180315668
    Abstract: A method for forming fin field effect transistors for complementary metal oxide semiconductor (CMOS) devices includes filling, with a dielectric fill, areas between fin structures formed on a substrate, the fin structures including a silicon layer formed on a SiGe layer; removing the SiGe layer of a first region of the fin structures by selectively etching the fin structures from the end portions of the fin structures to form voids; exposing the silicon layer of the fin structures in the first region and a second regions; and thermally oxidizing the SiGe layer in the second region, forming SiGe fins on a second dielectric material in the second region and silicon fins on the first dielectric material in the first region.
    Type: Application
    Filed: July 5, 2018
    Publication date: November 1, 2018
    Inventors: Hong He, James Kuss, Nicolas Loubet, Junli Wang
  • Publication number: 20180315666
    Abstract: Integrated circuits are disclosed in which the strain properties of adjacent pFETs and nFETs are independently adjustable. The pFETs include compressive-strained SiGe on a silicon substrate, while the nFETs include tensile-strained silicon on a strain-relaxed SiGe substrate. Adjacent n-type and p-type FinFETs are separated by electrically insulating regions formed by a damascene process. During formation of the insulating regions, the SiGe substrate supporting the n-type devices is permitted to relax elastically, thereby limiting defect formation in the crystal lattice of the SiGe substrate.
    Type: Application
    Filed: July 5, 2018
    Publication date: November 1, 2018
    Inventors: Nicolas LOUBET, Pierre MORIN, Yann MIGNOT
  • Publication number: 20180301534
    Abstract: A fin field effect transistor includes a Si fin including a central portion between end portions of the fin, and a SiGe channel region disposed on the central portion of the fin. The SiGe channel region includes a facet free SiGe region having Ge atoms diffused into the Si fin and includes a same shape as the Si fin outside the central portion.
    Type: Application
    Filed: June 22, 2018
    Publication date: October 18, 2018
    Inventors: Hong He, Nicolas Loubet, Junli Wang