Patents by Inventor Nicole Lundy

Nicole Lundy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Doping control of metal nitride films
    Patent number: 11587829
    Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
    Type: Grant
    Filed: January 7, 2021
    Date of Patent: February 21, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
  • Doping Control of Metal Nitride Films
    Publication number: 20210159118
    Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
    Type: Application
    Filed: January 7, 2021
    Publication date: May 27, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
  • Doping control of metal nitride films
    Patent number: 10910263
    Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
    Type: Grant
    Filed: August 20, 2019
    Date of Patent: February 2, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
  • DOPING CONTROL OF METAL NITRIDE FILMS
    Publication number: 20190378754
    Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
    Type: Application
    Filed: August 20, 2019
    Publication date: December 12, 2019
    Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
  • Doping control of metal nitride films
    Patent number: 10431493
    Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: October 1, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
  • Doping Control of Metal Nitride Films
    Publication number: 20180277428
    Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
    Type: Application
    Filed: May 25, 2018
    Publication date: September 27, 2018
    Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
  • Doping control of metal nitride films
    Patent number: 10008412
    Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: June 26, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
  • Doping Control of Metal Nitride Films
    Publication number: 20170256448
    Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
    Type: Application
    Filed: May 22, 2017
    Publication date: September 7, 2017
    Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
  • Doping control of metal nitride films
    Patent number: 9659814
    Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: May 23, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma
  • Doping Control of Metal Nitride Films
    Publication number: 20140220772
    Abstract: Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
    Type: Application
    Filed: January 31, 2014
    Publication date: August 7, 2014
    Inventors: Annamalai Lakshmanan, Ben-Li Sheu, Guodan Wei, Nicole Lundy, Paul F. Ma