Abstract: A semantic representation method and system based on an aerial surveillance video, and an electronic device are provided. The semantic representation method includes: taking a pedestrian and a vehicle in the aerial surveillance video as a target for tracking; inputting a coordinate track of the target into a first semantic classifier to output a first semantic result of the target; performing semantic merging on the first semantic result, and inputting an obtained semantic merging result into a second semantic classifier to output a second semantic result of the target; and performing cluster analysis on the first semantic result to obtain a target group of the target, and according to the target group of the target, the obtained scene analysis result and the second semantic result, determining semantics of the aerial surveillance video.

Abstract: A surface enhanced Raman spectroscopy (SERS) sensor may include a nano structured surface and a nonstoichiometric oxide layer. The nano structured surfers may include a first peak, a second peak and a valley between the first peak and the second peak. The non-stoichiometric oxide layer may include a first portion on the first peak and a second portion on the second peak.

Abstract: An example method includes: forming a bottom electrode on a substrate and forming a patterned mask layer on the bottom electrode; thermal oxidizing the bottom electrode layer via the patterned mask layer by applying a thermal process and a first plasma; removing a gaseous status of the bottom electrode oxide using a first vacuum purge; removing a solid status of the bottom electrode oxide by applying a second plasma; removing the gaseous status and the solid status of the bottom electrode oxide using a second vacuum purge to form a patterned bottom electrode; removing the patterned mask layer; forming a filament forming layer on the patterned bottom electrode; and a top electrode on the filament forming layer. The filament forming layer is configured to form a filament within the filament forming layer responsive to a switching voltage being applied to the filament forming layer.

Abstract: A device for detecting isotopes includes an isotope portion including a material including an isotope of an element, a reaction control portion to cause a chemical reaction of the material, and an electrical parameter portion to measure a change in an electrical parameter of the material, where the change in the electrical parameter is caused by the chemical reaction, and where the change in the electrical parameter is dependent on the isotope in the material, to detect the isotope by comparing the change in the electrical parameter of the material with a known electrical parameter associated with a known isotope.

Abstract: An enhanced reality system, in an example, includes an input device, the input device including a first arm and a second arm configured to be held together by a user; a sensor to sense, at least, a relative position of at least a portion of the first and second arms; wherein sensing, at least, the relative position of the first and second arms comprises a haptic retargeting process that simulates a touching of ends of the first and second arms to the outer surface of a virtual object presented in the enhanced reality environment.

Abstract: Switching oxide engineering technologies relating to low current RRAM-based crossbar array circuits are disclosed. An apparatus, in some implementations, includes: a substrate; a bottom electrode formed on the substrate; a switching oxide stack formed on the bottom electrode. The switching oxide stack includes one or more base oxide layers and one or more discontinuous oxide layers alternately stacked; An apparatus further includes a top electrode formed on the switching oxide stack. The base oxide layer includes TaOx, HfOx, TiOx, ZrOx, or a combination thereof. The discontinuous oxide layer includes Al2O3, SiO2, Si3N4, Y2O3, Gd2O3, Sm2O3, CeO2, Er2O3, or the combination thereof.

Abstract: Methods of using large output resistance with adjusted conductance mapping value to reduce the current in crossbar array circuit are disclosed. An example method of simulating a crossbar array circuit having a crossbar array, includes steps of: S1. testing the crossbar array; S2. calibrating a simulation model; S3. simulating the crossbar array with the simulation model, wherein a simulation result is generated after the S3; S4. determining a fixed ratio of ideal current from the simulation result; S5. adjusting conductance mapping value to let the crossbar array pass the fixed ratio of ideal current and generating a conductance matrix; S6. programming the conductance matrix to the crossbar array; S7. passing an input signal to the crossbar array and generating a computing result; and S8. checking the quality of computing results.

Abstract: Interface engineering technologies relating to low current RRAM-based crossbar array circuits are disclosed. An apparatus, in some implementations, includes: a substrate; a bottom electrode formed on the substrate; a first geometric confining layer formed on the bottom electrode. The first geometric confining layer comprises a first plurality of pin-holes. The apparatus further comprises a base oxide layer formed on the first geometric confining layer and connected to a first top surface of the bottom electrode via the first pin-holes; and a top electrode formed on the base oxide layer. The base oxide layer comprises one of: TaOx, HfOx, TiOx, ZrOx, or a combination thereof; the first geometric confining layer comprises Al2O3, SiO2, Si3N4, Y2O3, Gd2O3, Sm2O3, CeO2, Er2O3, or a combination thereof.

Abstract: A microporous structure includes an array of nano wires and a coating about the nano wires of the array. The coating defines pores between the nano wires.

Abstract: Technologies relating to implementing memristor crossbar arrays using non-filamentary RRAM cells are disclosed. In some implementations, an apparatus comprises: a first row wire; a first column wire; a non-filamentary RRAM; and an access control device. The non-filamentary RRAM and the access control device are serially connected; the non-filamentary RRAM and the access control device connect the first row wire with the first column wire. The non-filamentary RRAM and the access control device may form a cross-point device. The cross-point device may be less than 40×40 nm2. A set current of the non-filamentary RRAM may be no more than 10 ?A; and a reset current of the non-filamentary RRAM is no more than 10 ?A. The access control device may comprise a transistor or a selector.

Abstract: According to an example, an apparatus may include a printhead to deliver a printing liquid from firing chambers through a plurality of bores arranged along a surface of the printhead. The apparatus may also include a cleaning system to apply a pressurized cleaning fluid onto the surface of the printhead while preventing application of the pressurized cleaning fluid into the firing chambers through the plurality of bores.

Abstract: An electronic device and communication method are disclosed. The electronic device comprises a processing circuit configured to perform a pre-processing operation on a first one-dimensional sequence of modulation symbols, the pre-processing operation including: performing a dimension-increasing conversion to convert the first one-dimensional sequence of modulation symbols into a first multi-dimensional modulation symbol block; transforming the first multi-dimensional modulation symbol block into a second multi-dimensional modulation symbol block with a first transformation, wherein the first transformation couples each symbol in the first multi-dimensional modulation symbol block with each other; and performing a dimension-decreasing conversion to convert the second multi-dimensional modulation symbol block into a second one-dimensional sequence of modulation symbols, wherein the dimension-decreasing conversion is an inverse process of the dimension-increasing conversion.

Abstract: An electronic device for a backhaul network, wherein the backhaul network comprises a first communication apparatus connected to a core network and a plurality of second communication apparatuses performing wireless communication with the first communication apparatus, includes: processing circuitry configured to perform control to cause the first communication apparatus comprising the electronic device to: operate as a primary donor; select at least one second communication apparatus of the plurality of second communication apparatuses as a secondary donor; transmit a first indicating signal to the selected at least one second communication apparatus, the first indicating signal comprising node type information indicating the secondary donor; transmit a second indicating signal to a second communication apparatus that are not selected, the second indicating signal comprising node type information indicating a member node.

Abstract: An RFID security device for product packaging is disclosed. The security device includes an RFID tag disposed on a first portion of a product package, and a booster antenna disposed on a second portion of the product package. The RFID tag and booster antenna are positioned on the product package so that the RFID tag will be electromagnetically coupled to the booster antenna when the product package is closed, and the RFID tag will be decoupled from the booster antenna when the product package is open.

Abstract: An electronic device and communication method are disclosed. The electronic device comprises a processing circuit configured to perform a pre-processing operation on a first one-dimensional sequence of modulation symbols, the pre-processing operation including: performing a dimension-increasing conversion to convert the first one-dimensional sequence of modulation symbols into a first multi-dimensional modulation symbol block; transforming the first multi-dimensional modulation symbol block into a second multi-dimensional modulation symbol block with a first transformation, wherein the first transformation couples each symbol in the first multi-dimensional modulation symbol block with each other; and performing a dimension-decreasing conversion to convert the second multi-dimensional modulation symbol block into a second one-dimensional sequence of modulation symbols, wherein the dimension-decreasing conversion is an inverse process of the dimension-increasing conversion.

Abstract: An example method includes: forming a bottom electrode on a substrate and forming a patterned mask layer on the bottom electrode; thermal oxidizing the bottom electrode layer via the patterned mask layer by applying a thermal process and a first plasma; removing a gaseous status of the bottom electrode oxide using a first vacuum purge; removing a solid status of the bottom electrode oxide by applying a second plasma; removing the gaseous status and the solid status of the bottom electrode oxide using a second vacuum purge to form a patterned bottom electrode; removing the patterned mask layer; forming a filament forming layer on the patterned bottom electrode; and a top electrode on the filament forming layer. The filament forming layer is configured to form a filament within the filament forming layer responsive to a switching voltage being applied to the filament forming layer.

Abstract: A surface enhanced Raman scattering (SERS) sensor may include a substrate, an electrically conductive layer having a first portion spaced from a second portion by a gap, an electrically resistive layer in contact with and extending between the first portion and the second portion of the electrically conductive layer to form an electrically resistive bridge across the gap that heats the nano fingers in response to electrical current flowing across the bridge from the first portion to the second portion and nano fingers extending upward from the bridge.

Abstract: Examples associated with user authentication are described. One example method includes authenticating a user of a device using a static authentication technique. A behavior profile associated with the user is loaded. The behavior profile describes a pattern of device usage behavior by the user in a three-dimensional space over a time slice. The behavior profile also identifies distinctive user habits. Usage of the device is monitored, and a behavior similarity index is periodically updated. The behavior similarity index describes a similarity between the usage of the device and the pattern of device usage behavior. The behavior similarity index is weighted based on the distinctive user habits. Access to the device is restricted when the behavior similarity index reaches a predefined threshold.

Abstract: Systems and methods for providing a non-rewritable code comparator using a memristor and a serial resistor are disclosed. An example apparatus comprises: a plurality of first terminals; a plurality of second terminals; and a plurality of two-terminal device pairs formed between the plurality of first terminals and the plurality of second terminals. Each two-terminal device pair in the plurality of two-terminal device pairs include at least one memristor and at least one resistor; each two-terminal device pair is configured to be switched to a subsequent state once and only once. In some implementations, a two-terminal device pair is configured to remain in the subsequent state regardless of whether an input signal to the apparatus matches a reference signal to the apparatus.

Abstract: Technologies relating to crossbar array circuits with parallel grounding lines are disclosed. An example crossbar array circuit includes: a word line; a bit line; a first selector line; a grounding line; a first transistor including a first source terminal, a first drain terminal, a first gate terminal, and a first body terminal; and an RRAM device connected in series with the first transistor. The grounding line is connected to the first body terminal and is grounded and the grounding line parallel to the bit line. The first selector line is connected to the first gate terminal. In some implementations, the RRAM device is connected between the first transistor via the first drain terminal and the word line, and the first source terminal is connected to the bit line.