Abstract: A photovoltaic charging system having a narrow-spectrum light source attuned to an absorption band of a photovoltaic cell may achieve power delivery of at least 0.5 mW/10,000 ?m2 upon stimulation of the photovoltaic cell with narrow-spectrum light.

Abstract: A method is presented for forming a semiconductor device. The method may include forming a source contact on the semiconductor substrate, forming a drain contact on the semiconductor substrate, and forming a gate structure on the semiconductor substrate between the source and drain contacts, the gate structure including a piezoelectric material having at least one graphene layer.

Abstract: A liquid crystal display panel and a method for forming the same and a display device are provided. The liquid crystal display panel includes two substrates opposite to each other and two polarizing plates at two sides of the two substrates away from each other. There exists a large cell gap region between the two substrates which has a cell gap larger than regions between the two substrates other than the large cell gap region, each polarizing plate includes a first polarizing layer, and at least one of the polarizing plates further includes a second polarizing layer. The second polarizing layer includes a pattern region corresponding to a position and a shape of the large cell gap region. There is an acute angle between a light absorption axis of the second polarizing layer at the pattern region and a light absorption axis of the first polarizing layer.

Abstract: Magnetic regions of at least one of chiplet or a receiving substrate are used to permit magnetically guided precision placement of chiplets on the receiving substrate. In some embodiments, a scanning magnetic head can be used to release individual chiplets from a temporary support substrate to the receiving substrate. Structures are provided in which a magnetic moment of a controlled orientation exists between the transferred chiplets and the receiving substrate.

Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature so that the film can be selectively etched from the top and bottom of the feature relative to the film on the sidewalls of the feature.

Abstract: A semiconductor structure is provided that contains a non-volatile battery which controls gate bias. The non-volatile battery has a stable voltage and thus the structure may be used in neuromorphic computing. The semiconductor structure may include a semiconductor substrate including at least one channel region that is positioned between source/drain regions. A gate dielectric material is located on the channel region of the semiconductor substrate. A battery stack is located on the gate dielectric material. In accordance with the present application, the battery stack includes, an anode current collector located on the gate dielectric material, an anode region located on the anode current collector, an ion diffusion barrier material located on the anode region, an electrolyte located on the ion diffusion barrier material, a cathode material located on the electrolyte, and a cathode current collector located on the cathode material.

Abstract: A semiconductor structure is provided that contains a non-volatile battery which controls gate bias and has increased output voltage retention and voltage resolution. The semiconductor structure may include a semiconductor substrate including at least one channel region that is positioned between source/drain regions. A gate dielectric material is located on the channel region of the semiconductor substrate. A battery stack is located on the gate dielectric material. The battery stack includes, a cathode current collector located on the gate dielectric material, a cathode material located on the cathode current collector, a first ion diffusion barrier material located on the cathode material, an electrolyte located on the first ion diffusion barrier material, a second ion diffusion barrier material located on the electrolyte, an anode region located on the second ion diffusion barrier material, and an anode current collector located on the anode region.

Abstract: Genetically programmed microorganisms, such as bacteria or virus, pharmaceutical compositions thereof, and methods of modulating and treating cancers are disclosed.

Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials.

Abstract: Memristive devices based on tunable Schottky barrier are provided. In one aspect, a method of forming a memristive device includes: forming a semiconductor layer on a bottom metal electrode, wherein the semiconductor layer has workfunction-modifying molecules embedded therein; and forming a top metal electrode on the semiconductor layer, wherein the top metal electrode forms a Schottky junction with the semiconductor layer, and wherein the workfunction-modifying molecules are configured to alter a workfunction of the top metal electrode. A memristive device and a method for operating a memristive device are also provided.

Abstract: Techniques for implementing organic materials in sunscreen applications are provided herein. A method includes selecting a combination of multiple organic materials to incorporate into a sunscreen composition, wherein said selecting is based on (i) a desired absorption spectrum of the sunscreen composition, (ii) the absorption spectrum of each of the multiple organic materials, and (iii) a particle size limitation for each of the multiple organic materials, and incorporating the selected combination of organic materials into the sunscreen composition to generate the desired absorption spectrum. A composition includes a combination of multiple organic materials incorporated into a sunscreen composition, wherein the combination of organic materials is selected based on (i) a desired absorption spectrum of the sunscreen composition, (ii) the absorption spectrum of each of the multiple organic materials, and (iii) a particle size limitation for each of the multiple organic materials.

Abstract: A method of forming a pair of edge-emitting lasers is provided. The method includes forming a mesa from a substrate, forming a cover layer on the substrate around the mesa, and forming a first barrier layer on each of opposite sidewalls of the mesa. The method further includes forming a quantum well layer on each of the barrier layers, forming a second barrier layer on each of the quantum well layers, and forming a cladding layer on each of the second barrier layers.

Abstract: An electrical device that includes a material stack present on a supporting substrate. An LED is present in a first end of the material stack having a first set of bandgap materials. A photovoltaic device is present in a second end of the material stack having a second set of bandgap materials. The first end of the material stack being a light receiving end, wherein a widest bandgap material for the first set of bandgap material is greater than a highest bandgap material for the second set of bandgap materials. A zinc oxide interface layer is present between the LED and the photovoltaic device. The zinc oxide layers or can also form a LED.

Abstract: A semiconductor device that includes source and drain regions that are doped to an n-type conductivity and are comprised of a type III-V semiconductor material. The semiconductor device further includes a contact to at least one of the source and drain regions. The contact includes an interface passivation layer atop the at least one source and drain region, and an n-type zinc oxide layer. A conduction band of the type III-V semiconductor material of the at least one source and drain region is substantially aligned with a conduction band of the n-type zinc oxide containing layer.

Abstract: The present application provides a method and a system for determining a saturation exponent of a heterogeneous carbonate reservoir. The method comprises: dividing a target reservoir into at least two reservoir types in accordance with a predetermined rule; obtaining a correspondence relationship between a saturation exponent and a bound water saturation in each of the reservoir types; determining the reservoir type to which a to-be-measured core belongs in accordance with the predetermined rule; obtaining a bound water saturation of the to-be-measured core; and calculating the saturation exponent of the to-be-measured core according to the bound water saturation of the to-be-measured core on the basis of the correspondence relationship of the reservoir type to which the to-be-measured core belongs.

Abstract: Technical solutions are described for implementing an optogenetics treatment using a probe and probe controller are described. A probe controller controls a probe to perform the method that includes emitting, by a light source of the probe, the probe is embeddable in a tissue, a light wave to interact with a corresponding chemical in one or more cells in the tissue. The method further includes capturing, by a sensor of the probe, a spectroscopy of the light wave interacting with the corresponding chemical. The method further includes sending, by the probe, the spectroscopy to an analysis system. The method further includes receiving, by the probe, from the analysis system, adjusted parameters for the light source, and adjusting, by a controller of the probe, settings of the light source according to the received adjusted parameters to emit a different light wave to interact with the corresponding chemical.

Abstract: A structure includes an optoelectronic device having a Group IV substrate (e.g., Si); a buffer layer (e.g. SiGe) disposed on the substrate and a first distributed Bragg reflector (DBR) disposed on the buffer layer. The first DBR contains alternating layers of doped Group IV materials (e.g., alternating layers of SiyGe(1-y), where 0.8<y<1, and SizGe(1-z), where 0.2<z<0.4) that are substantially transparent to a wavelength of interest. The structure further includes a strained layer of a Group III-V material over the first DBR and a second DBR over the strained layer. The second DBR contains alternating layers of electrically conductive oxides (e.g., ITO/AZO) that are substantially transparent to the wavelength of interest. Embodiments of VCSELs and photodetectors can be derived from the structure. The strained layer of Group III-V material can be, for example, a thin layer of In0.53Ga0.47As having a thickness in a range of about 2 nm to about 5 nm.

Abstract: A glove structure of the present invention has a glove palm, a glove back and an edging. The edging is a bent sheet and has an upper side edge and a lower side edge, wherein the lower and upper side edges are respectively adhered to the glove palm and the glove back via joining regions, and the lower and upper side edges bend toward the glove palm. Thus, the whole glove structure bends along a direction being from the glove back to the glove back to make the glove structure be a ergonomics structure which the fingers bend toward the glove palm when the human hand is under a working state or a general state without force.

Abstract: Embodiments of the present application disclose a method, device, and system for application hot deployment. The method includes determining, by one or more processors associated with a terminal, that a data resource is updated, and in response to determining that the data resource is updated, obtaining, by the one or more processors, an updated data resource, and updating a page displayed by a browser on the terminal, wherein the data resource is used in connection with the page being rendered, and the updating being based at least in part on the updated data resource.

Abstract: A single chip including an optoelectronic device on the semiconductor layer in a first region, the optoelectronic device comprises a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is above and in direct contact with the semiconductor layer, the active region is above and in direct contact with the bottom cladding layer, and the top cladding layer is above and in direct contact with the active region, a silicon device on the substrate extension layer in a second region, a device insulator layer substantially covering both the optoelectronic device in the first region and the silicon device in the second region, and a waveguide embedded within the device insulator layer in direct contact with a sidewall of the active region of the optoelectronic device.