Patents by Inventor Nirmalya Maity

Nirmalya Maity has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8616246
    Abstract: The invention provides an insulated pipe-in-pipe assembly comprising (a) at least one inner pipe, (b) an outer pipe disposed around the at least one inner pipe so as to create an annular space between the outer and inner pipes, (c) porous, resilient, compressible material disposed in the annular space, and (d) a remnant of a container that previously was positioned in the annular space and previously held the compressible material in a volume less than the volume of the compressible material in the annular space. The invention also provides a method for making such an insulated pipe-in-pipe assembly.
    Type: Grant
    Filed: June 6, 2006
    Date of Patent: December 31, 2013
    Assignee: Cabot Corporation
    Inventors: John L. Dinon, Hobart C. Kalkstein, Nirmalya Maity, Ravijit Paintal, Aaron H. Johnson, Andries Du Plessis
  • Patent number: 8324095
    Abstract: A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
    Type: Grant
    Filed: November 30, 2009
    Date of Patent: December 4, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Hua Chung, Nirmalya Maity, Jick Yu, Roderick Craig Mosely, Mei Chang
  • Patent number: 7807030
    Abstract: A small magnet assembly having a magnet assembly of area less than 10% of the target area, is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target.
    Type: Grant
    Filed: December 14, 2006
    Date of Patent: October 5, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Ilyoung Richard Hong, James Tsung, Daniel Clarence Lubben, Peijun Ding, Nirmalya Maity
  • Patent number: 7691742
    Abstract: In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate.
    Type: Grant
    Filed: February 4, 2009
    Date of Patent: April 6, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
  • Publication number: 20100075494
    Abstract: A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
    Type: Application
    Filed: November 30, 2009
    Publication date: March 25, 2010
    Inventors: Hua Chung, Nirmalya Maity, Jick Yu, Roderick Craig Mosely, Mei Chang
  • Patent number: 7595263
    Abstract: Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.
    Type: Grant
    Filed: March 27, 2007
    Date of Patent: September 29, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Hua Chung, Rongjun Wang, Nirmalya Maity
  • Publication number: 20090205737
    Abstract: The invention provides an insulated pipe-in-pipe assembly comprising (a) at least one inner pipe, (b) an outer pipe disposed around the at least one inner pipe so as to create an annular space between the outer and inner pipes, (c) porous, resilient, compressible material disposed in the annular space, and (d) a remnant of a container that previously was positioned in the annular space and previously held the compressible material in a volume less than the volume of the compressible material in the annular space. The invention also provides a method for making such an insulated pipe-in-pipe assembly.
    Type: Application
    Filed: June 6, 2006
    Publication date: August 20, 2009
    Applicant: Cabot Corporation
    Inventors: John L. Dinon, Hobart C. Kalkstein, Nirmalya Maity, Ravijit Paintal, Aaron H. Johnson, Andries Du Plessis
  • Publication number: 20090202710
    Abstract: In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate.
    Type: Application
    Filed: February 4, 2009
    Publication date: August 13, 2009
    Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
  • Patent number: 7524762
    Abstract: In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate.
    Type: Grant
    Filed: July 3, 2007
    Date of Patent: April 28, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
  • Publication number: 20080032041
    Abstract: In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate.
    Type: Application
    Filed: July 3, 2007
    Publication date: February 7, 2008
    Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
  • Patent number: 7264846
    Abstract: A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and a reducing gas on a substrate structure. The adsorbed ruthenium-containing precursor reacts with the adsorbed reducing gas to form the ruthenium layer on the substrate.
    Type: Grant
    Filed: August 4, 2003
    Date of Patent: September 4, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Mei Chang, Seshadri Ganguli, Nirmalya Maity
  • Publication number: 20070190780
    Abstract: Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.
    Type: Application
    Filed: March 27, 2007
    Publication date: August 16, 2007
    Inventors: HUA CHUNG, Rongjun Wang, Nirmalya Maity
  • Patent number: 7241686
    Abstract: In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing material is deposited having a predetermined thickness. Usually, the TAIMATA is preheated prior to pulsing the tantalum precursor into the process chamber. Subsequently, a metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride, or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.
    Type: Grant
    Filed: February 19, 2005
    Date of Patent: July 10, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
  • Publication number: 20070102284
    Abstract: A small magnet assembly having a magnet assembly of area less than 10% of the target area, is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target.
    Type: Application
    Filed: December 14, 2006
    Publication date: May 10, 2007
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Ilyoung HONG, James TSUNG, Daniel LUBBEN, Peijun DING, Nirmalya MAITY
  • Patent number: 7211508
    Abstract: Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.
    Type: Grant
    Filed: June 18, 2004
    Date of Patent: May 1, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Hua Chung, Rongjun Wang, Nirmalya Maity
  • Patent number: 7169271
    Abstract: A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.
    Type: Grant
    Filed: June 7, 2004
    Date of Patent: January 30, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Ilyoung Richard Hong, James Tsung, Daniel Clarence Lubben, Peijun Ding, Nirmalya Maity
  • Publication number: 20060272727
    Abstract: The invention provides an insulated pipe-in-pipe assembly comprising (a) at least one inner pipe, (b) an outer pipe disposed around the at least one inner pipe so as to create an annular space between the outer and inner pipes, (c) porous, resilient, compressible material disposed in the annular space, and (d) a remnant of a container that previously was positioned in the annular space and previously held the compressible material in a volume less than the volume of the compressible material in the annular space. The invention also provides a method for making such an insulated pipe-in-pipe assembly.
    Type: Application
    Filed: January 21, 2006
    Publication date: December 7, 2006
    Inventors: John Dinon, Hobart Kalkstein, Nirmalya Maity, Ravijit Paintal, Aaron Johnson, Andries Plessis
  • Publication number: 20060153973
    Abstract: In one embodiment, a method for forming a material on a substrate is provided which includes positioning a substrate containing a dielectric material having vias formed therein within a process chamber, forming a barrier layer within the vias and on the dielectric material during a barrier deposition process, forming a ruthenium layer on the barrier layer during a ruthenium deposition process, and filling the vias with a copper material during a copper deposition process. The copper material may be formed by depositing a copper bulk layer over a copper seed layer. The method further provides that the ruthenium layer may be formed by an atomic layer deposition process (ALD) or a physical vapor deposition (PVD) process and the copper material may be formed by an electroless chemical plating process, an electroplating process, a chemical vapor deposition process, an ALD process and/or a PVD process.
    Type: Application
    Filed: January 20, 2006
    Publication date: July 13, 2006
    Inventors: Mei Chang, Seshadri Ganguli, Nirmalya Maity
  • Publication number: 20060148253
    Abstract: A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
    Type: Application
    Filed: March 3, 2006
    Publication date: July 6, 2006
    Inventors: Hua Chung, Nirmalya Maity, Jick Yu, Roderick Mosely, Mei Chang
  • Patent number: 7049226
    Abstract: A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
    Type: Grant
    Filed: June 10, 2004
    Date of Patent: May 23, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Hua Chung, Nirmalya Maity, Jick Yu, Roderick Craig Mosely, Mei Chang