Patents by Inventor Nirmalya Maity
Nirmalya Maity has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230288916Abstract: Apparatus for extending substrate queue time for hybrid bonding by preserving plasma activation. In some embodiments, the apparatus may include an environmentally controllable space with a support for holding a die or a substrate, a gas velocity accelerator that recirculates one or more gases laterally across the support, a filter, a humidifier apparatus that is fluidly connected to the environmentally controllable space, wherein the humidifier apparatus enables controllable humidity levels within the environmentally controllable space, a pressurizing apparatus fluidly connected to the humidifier apparatus on an output and fluidly connected to at least one gas supply on an input, a relative humidity (RH) sensor positioned within the environmentally controllable space, and an environment controller in communication with at least the humidifier apparatus and the RH sensor, wherein the environment controller is configured to maintain an RH level of approximately 80% to approximately 95%.Type: ApplicationFiled: March 11, 2022Publication date: September 14, 2023Inventors: Ying WANG, Xundong DAI, Guan Huei SEE, Ruiping WANG, Michael R. RICE, Hari Kishen PONNEKANTI, Nirmalya MAITY
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Publication number: 20230187222Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, printed circuit board (PCB) assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a substrate core (e.g., a core structure) is implanted with dopants to achieve a desired bulk resistivity or conductivity. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.Type: ApplicationFiled: December 13, 2021Publication date: June 15, 2023Inventors: Mukhles SOWWAN, Samer BANNA, Nirmalya MAITY, Nalamasu OMKARAM, Gary E. DICKERSON
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Patent number: 8616246Abstract: The invention provides an insulated pipe-in-pipe assembly comprising (a) at least one inner pipe, (b) an outer pipe disposed around the at least one inner pipe so as to create an annular space between the outer and inner pipes, (c) porous, resilient, compressible material disposed in the annular space, and (d) a remnant of a container that previously was positioned in the annular space and previously held the compressible material in a volume less than the volume of the compressible material in the annular space. The invention also provides a method for making such an insulated pipe-in-pipe assembly.Type: GrantFiled: June 6, 2006Date of Patent: December 31, 2013Assignee: Cabot CorporationInventors: John L. Dinon, Hobart C. Kalkstein, Nirmalya Maity, Ravijit Paintal, Aaron H. Johnson, Andries Du Plessis
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Patent number: 8324095Abstract: A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.Type: GrantFiled: November 30, 2009Date of Patent: December 4, 2012Assignee: Applied Materials, Inc.Inventors: Hua Chung, Nirmalya Maity, Jick Yu, Roderick Craig Mosely, Mei Chang
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Patent number: 7807030Abstract: A small magnet assembly having a magnet assembly of area less than 10% of the target area, is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target.Type: GrantFiled: December 14, 2006Date of Patent: October 5, 2010Assignee: Applied Materials, Inc.Inventors: Ilyoung Richard Hong, James Tsung, Daniel Clarence Lubben, Peijun Ding, Nirmalya Maity
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Patent number: 7691742Abstract: In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate.Type: GrantFiled: February 4, 2009Date of Patent: April 6, 2010Assignee: Applied Materials, Inc.Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
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Publication number: 20100075494Abstract: A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.Type: ApplicationFiled: November 30, 2009Publication date: March 25, 2010Inventors: Hua Chung, Nirmalya Maity, Jick Yu, Roderick Craig Mosely, Mei Chang
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Patent number: 7595263Abstract: Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.Type: GrantFiled: March 27, 2007Date of Patent: September 29, 2009Assignee: Applied Materials, Inc.Inventors: Hua Chung, Rongjun Wang, Nirmalya Maity
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Publication number: 20090205737Abstract: The invention provides an insulated pipe-in-pipe assembly comprising (a) at least one inner pipe, (b) an outer pipe disposed around the at least one inner pipe so as to create an annular space between the outer and inner pipes, (c) porous, resilient, compressible material disposed in the annular space, and (d) a remnant of a container that previously was positioned in the annular space and previously held the compressible material in a volume less than the volume of the compressible material in the annular space. The invention also provides a method for making such an insulated pipe-in-pipe assembly.Type: ApplicationFiled: June 6, 2006Publication date: August 20, 2009Applicant: Cabot CorporationInventors: John L. Dinon, Hobart C. Kalkstein, Nirmalya Maity, Ravijit Paintal, Aaron H. Johnson, Andries Du Plessis
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Publication number: 20090202710Abstract: In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate.Type: ApplicationFiled: February 4, 2009Publication date: August 13, 2009Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
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Patent number: 7524762Abstract: In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate.Type: GrantFiled: July 3, 2007Date of Patent: April 28, 2009Assignee: Applied Materials, Inc.Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
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Publication number: 20080032041Abstract: In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate.Type: ApplicationFiled: July 3, 2007Publication date: February 7, 2008Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
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Patent number: 7264846Abstract: A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and a reducing gas on a substrate structure. The adsorbed ruthenium-containing precursor reacts with the adsorbed reducing gas to form the ruthenium layer on the substrate.Type: GrantFiled: August 4, 2003Date of Patent: September 4, 2007Assignee: Applied Materials, Inc.Inventors: Mei Chang, Seshadri Ganguli, Nirmalya Maity
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Publication number: 20070190780Abstract: Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.Type: ApplicationFiled: March 27, 2007Publication date: August 16, 2007Inventors: HUA CHUNG, Rongjun Wang, Nirmalya Maity
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Patent number: 7241686Abstract: In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing material is deposited having a predetermined thickness. Usually, the TAIMATA is preheated prior to pulsing the tantalum precursor into the process chamber. Subsequently, a metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride, or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.Type: GrantFiled: February 19, 2005Date of Patent: July 10, 2007Assignee: Applied Materials, Inc.Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
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Publication number: 20070102284Abstract: A small magnet assembly having a magnet assembly of area less than 10% of the target area, is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target.Type: ApplicationFiled: December 14, 2006Publication date: May 10, 2007Applicant: APPLIED MATERIALS, INC.Inventors: Ilyoung HONG, James TSUNG, Daniel LUBBEN, Peijun DING, Nirmalya MAITY
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Patent number: 7211508Abstract: Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.Type: GrantFiled: June 18, 2004Date of Patent: May 1, 2007Assignee: Applied Materials, Inc.Inventors: Hua Chung, Rongjun Wang, Nirmalya Maity
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Patent number: 7169271Abstract: A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.Type: GrantFiled: June 7, 2004Date of Patent: January 30, 2007Assignee: Applied Materials, Inc.Inventors: Ilyoung Richard Hong, James Tsung, Daniel Clarence Lubben, Peijun Ding, Nirmalya Maity
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Publication number: 20060272727Abstract: The invention provides an insulated pipe-in-pipe assembly comprising (a) at least one inner pipe, (b) an outer pipe disposed around the at least one inner pipe so as to create an annular space between the outer and inner pipes, (c) porous, resilient, compressible material disposed in the annular space, and (d) a remnant of a container that previously was positioned in the annular space and previously held the compressible material in a volume less than the volume of the compressible material in the annular space. The invention also provides a method for making such an insulated pipe-in-pipe assembly.Type: ApplicationFiled: January 21, 2006Publication date: December 7, 2006Inventors: John Dinon, Hobart Kalkstein, Nirmalya Maity, Ravijit Paintal, Aaron Johnson, Andries Plessis
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Publication number: 20060153973Abstract: In one embodiment, a method for forming a material on a substrate is provided which includes positioning a substrate containing a dielectric material having vias formed therein within a process chamber, forming a barrier layer within the vias and on the dielectric material during a barrier deposition process, forming a ruthenium layer on the barrier layer during a ruthenium deposition process, and filling the vias with a copper material during a copper deposition process. The copper material may be formed by depositing a copper bulk layer over a copper seed layer. The method further provides that the ruthenium layer may be formed by an atomic layer deposition process (ALD) or a physical vapor deposition (PVD) process and the copper material may be formed by an electroless chemical plating process, an electroplating process, a chemical vapor deposition process, an ALD process and/or a PVD process.Type: ApplicationFiled: January 20, 2006Publication date: July 13, 2006Inventors: Mei Chang, Seshadri Ganguli, Nirmalya Maity