Patents by Inventor Nirmalya Maity
Nirmalya Maity has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20060148253Abstract: A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.Type: ApplicationFiled: March 3, 2006Publication date: July 6, 2006Inventors: Hua Chung, Nirmalya Maity, Jick Yu, Roderick Mosely, Mei Chang
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Patent number: 7049226Abstract: A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.Type: GrantFiled: June 10, 2004Date of Patent: May 23, 2006Assignee: Applied Materials, Inc.Inventors: Hua Chung, Nirmalya Maity, Jick Yu, Roderick Craig Mosely, Mei Chang
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Publication number: 20060019495Abstract: In one example of the invention, a method for depositing a tantalum-containing material on a substrate in a process chamber is provided which includes exposing the substrate to a tantalum precursor that contains TAIMATA and to at least one secondary precursor to deposit a tantalum-containing film during an atomic layer deposition (ALD) process. The ALD process is repeated until the tantalum-containing film is deposited with a predetermined thickness. Usually, the TAIMATA is preheated prior pulsing the tantalum precursor into the process chamber. A metal layer, such as tungsten or copper, may be deposited on the tantalum-containing material. The tantalum-containing material may include tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier or adhesion layer within a via or as a gate electrode material within a source/drain device.Type: ApplicationFiled: February 19, 2005Publication date: January 26, 2006Inventors: Christophe Marcadal, Rongjun Wang, Hua Chung, Nirmalya Maity
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Publication number: 20050106865Abstract: A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.Type: ApplicationFiled: June 10, 2004Publication date: May 19, 2005Inventors: Hua Chung, Nirmalya Maity, Jick Yu, Roderick Mosely, Mei Chang
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Publication number: 20050009325Abstract: Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.Type: ApplicationFiled: June 18, 2004Publication date: January 13, 2005Inventors: Hua Chung, Rongjun Wang, Nirmalya Maity
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Patent number: 6841050Abstract: A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.Type: GrantFiled: May 21, 2002Date of Patent: January 11, 2005Assignee: Applied Materials, Inc.Inventors: Ilyoung Richard Hong, James Tsung, Daniel Clarence Lubben, Peijun Ding, Nirmalya Maity
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Publication number: 20040222087Abstract: A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.Type: ApplicationFiled: June 7, 2004Publication date: November 11, 2004Inventors: Ilyoung Richard Hong, James Tsung, Daniel Clarence Lubben, Peijun Ding, Nirmalya Maity
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Publication number: 20040105934Abstract: A method of ruthenium layer formation for high aspect ratios, interconnect features is described. The ruthenium layer is formed using a cyclical deposition process. The cyclical deposition process comprises alternately adsorbing a ruthenium-containing precursor and a reducing gas on a substrate structure. The adsorbed ruthenium-containing precursor reacts with the adsorbed reducing gas to form the ruthenium layer on the substrate.Type: ApplicationFiled: August 4, 2003Publication date: June 3, 2004Inventors: Mei Chang, Seshadri Ganguli, Nirmalya Maity
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Publication number: 20030217913Abstract: A small magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly passes through the target center, thus allowing full target coverage. A properly chosen ratio of the two rotations about respective axes produces a much slower magnet velocity near the target periphery than at the target center. A geared planetary mechanism includes a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plane supporting a cantilevered magnet assembly on the side of the drive plate facing the target. A belted planetary mechanism includes a fixed center capstan, a follower pulley supporting the magnet assembly, and a belt wrapped around them.Type: ApplicationFiled: May 21, 2002Publication date: November 27, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Ilyoung Richard Hong, James Tsung, Daniel Clarence Lubben, Peijun Ding, Nirmalya Maity
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Publication number: 20030216035Abstract: A physical vapor deposition chamber is employed to sputter-deposit a layer of material, such as a tantalum or tantalum nitride barrier layer, in a via formed on a semiconductor substrate. After the sputter-deposition step, a second processing step is performed in which material from the barrier layer is back-sputtered from the bottom wall of the via. The second step is performed at a high pedestal bias and with substantial power applied to the sputtering target. The power applied to the sputtering target in the second step may be at a higher level than the power applied to the sputtering target in the first step. Numerous other aspects are provided.Type: ApplicationFiled: May 14, 2003Publication date: November 20, 2003Applicant: Applied Materials, Inc.Inventors: Suraj Rengarajan, Michael Miller, Darryl Angelo, Nirmalya Maity, Peijun Ding
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Publication number: 20030116427Abstract: A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by ICP resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering.Type: ApplicationFiled: July 25, 2002Publication date: June 26, 2003Applicant: Applied Materials, Inc.Inventors: Peijun Ding, Zheng Xu, Roderick C. Mosely, Suraj Rengarajan, Nirmalya Maity, Daniel A. Carl, Barry Chin, Paul F. Smith, Darryl Angelo, Anish Tolia, Jianming Fu, Fusen Chen, Praburam Gopalraja, Xianmin Tang, John C. Forster
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Publication number: 20020084181Abstract: The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step.Type: ApplicationFiled: November 7, 2001Publication date: July 4, 2002Applicant: Applied Materials, Inc.Inventors: Praburam Gopalraja, Sergio Edelstein, Avi Tepman, Peijun Ding, Debabrata Ghosh, Nirmalya Maity
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Patent number: 6350353Abstract: The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step.Type: GrantFiled: November 24, 1999Date of Patent: February 26, 2002Assignee: Applied Materials, Inc.Inventors: Praburam Gopalraja, Sergio Edelstein, Avi Tepman, Peijun Ding, Debabrata Ghosh, Nirmalya Maity
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Publication number: 20010003607Abstract: The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step.Type: ApplicationFiled: November 24, 1999Publication date: June 14, 2001Inventors: PRABURAM GOPALRAJA, SERGIO EDELSTEIN, AVI TEPMAN, PEIJUN DING, DEBABRATA GHOSH, NIRMALYA MAITY