Abstract: There is no surveillance camera system optimum for monitoring an important monitor place by a surveillance camera mainly for crime prevention day and night without humans in attendance, which can automatically monitor the place without humans in attendance and, when something suspicious is found, follow the suspicious without humans in attendance, and accurately monitor the suspicious at high precision. The present invention provides a surveillance camera driving method achieving such a system having the function of obtaining video image signals by two or more surveillance cameras each having a three-dimensional positioning pan tilt head function, organically processing the video information, comparing the processed information with input data of a plane picture or the like or data of pictures of a front view and a side view or the like, and determining whether the processed video signal is the same as the input data or not.

Abstract: There is no surveillance camera system optimum for monitoring an important monitor place by a surveillance camera mainly for crime prevention day and night without humans in attendance, which can automatically monitor the place without humans in attendance and, when something suspicious is found, follow the suspicious without humans in attendance, and accurately monitor the suspicious at high precision. The present invention provides a surveillance camera driving method achieving such a system having the function of obtaining video image signals by two or more surveillance cameras each having a three-dimensional positioning pan tilt head function, organically processing the video information, comparing the processed information with input data of a plane picture or the like or data of pictures of a front view and a side view or the like, and determining whether the processed video signal is the same as the input data or not.

Abstract: In a case where an electronic circuit having the same function is to be realized by a different device, it is indispensable to prepare circuit diagrams conforming to devices and to utilize them for the job of circuit simulation or chip layout. When the circuit diagrams are to be automatically translated for the above purpose, translation rules become different depending upon the connective relations of an element to be translated, with other elements in the circuit or upon a function performed by the element. The present invention puts the rules into knowledge from the viewpoint of knowledge engineering and utilizes it thereby to realize the intended purpose.

Abstract: In order to translate an original circuit consisting of a set of first devices into a target circuit which consists of a set of second devices different from the first devices, and which has the same functions as the original circuit, provision is made of memory means for storing translation rules in the first devices, translation rules in the second devices, and translation rules between the first devices and the second devices, and translation means which successively refers to these translation rules and translates the original circuit data into the target circuit data via steps that translate the original circuit data into a plurality of intermediate data.

Abstract: The structure of a circuit which is given basic net data is stored as a pattern, the compliance of the basic net data with the pattern is checked by the separately prepared search function, and upon fulfillment of compliance the pattern is determined to exist within the circuit. The subcircuit to be recognized by elements is not directly defined, but is defined using an intermediate expression defined recursively so as to implement a search through pattern matching. In another form, one input terminal is specified, which is followed by a search for blocks having the terminal as an input node and the search for blocks having one of the output node strings as an input node recursively and cyclically until the output terminal is reached, so as to extract a string of nodes on which the signal is propagated. The system is provided with functions for recognizing and comprehending subsidiary structures of the circuit which are not defined by the entered net data.

Abstract: A semiconductor IC structure including a plurality of isolated devices in a single substrate of a first conductivity type comprising at least three wells of a second conductivity type formed in the substrate, two of the wells reaching different edges of a buried layer of the second conductivity type at the bottom of the substrate to define a first zone of the first conductivity type in the substrate and the other wells defining at least one second zone of the first conductivity type in the substrate, and a method of fabricating a semiconductor IC structure of the above-mentioned type.

Abstract: A protective element for preventing electrostatic puncture of a semiconductor integrated circuit comprises a semiconductor substrate of one conductivity type, a first semiconductor region of the opposite conductivity type formed within a selected part of the surface of the semiconductor substrate, and a second semiconductor region of the one conductivity type formed within a selected part of the surface of the first semiconductor region, the first and second semiconductor regions being partially short-circuited. When a surge pulse voltage is impressed between the substrate and the second region, the element operates as a diode or a transistor so as to absorb the surge pulse.

Abstract: A semiconductor device comprising at least a pair of NPN and PNP transistors is improved. This semiconductor device is characterized in that at least one pair of vertical transistors are formed in a semiconductor layer of the second conductivity type formed on a semiconductor substrate of the first conductivity type, the semiconductor layer of the second conductivity type serving as both the collector of one of the transistors and the base of the other and that the transistors are electrically insulated from each other by organic insulator formed on the inorganic insulating film on the semiconductor substrate. Thus, a semiconductor device can be obtained in which PNP transistors having good characteristics such as current amplification factor h.sub.FE and gain-bandwidth product f.sub.T are incorporated in an integrated circuit consisting mainly of NPN transistors.

Abstract: A method of manufacturing a semiconductor integrated circuit device, which includes at least one junction field-effect transistor and at least one bipolar transistor, is characterized in that a groove portion is formed by chemically etching a part of a diffused layer for the channel region of the junction field-effect transistor, and that a layer for the gate of the junction field-effect transistor having a conductivity type to opposite to that of the channel region is formed by diffusion in the diffused layer of the channel region beneath the groove portion, whereby the pinch-off voltage V.sub.p of the junction field-effect transistor is made as small as possible and is also made smaller than the base-emitter reverse withstand voltage V.sub.BEO of the bipolar transistor.

Abstract: A method of manufacturing a semiconductor integrated circuit device including N-P-N transistors is characterized in that a base region of at least one of the N-P-N transistors is partially etched and removed with chemicals, thus to be formed with a depression, and that an emitter region opposite in the conductivity type to the base region is formed in the base region beneath the depression, whereby the at least one N-P-N transistor is made higher in the current gain h.sub.FE than the other N-P-N transistors being the main constituents of the integrated circuit device.

Abstract: In a capacitance circuit having a capacitance element which exhibits a breakdown characteristic and which generates noises at breakdown, the improvement comprising a constant-voltage element, which has a lower breakdown voltage than the capacitance element and a lower noise level than the capacitance element in the state of breakdown, connected in parallel with the capacitance element. The voltage across the capacitance element is clamped at the breakdown voltage of the constant-voltage element, so that the capacitance element is prevented from breaking down and thus generating noise components.

Abstract: A multiple transistor consists of vertical and lateral transistors, the collector region of the lateral transistor is formed by diffusion within the diffused base region of the vertical transistor simultaneously with the emitter region of the vertical transistor, into a structure in which the base of the vertical transistor and the collector of the lateral transistor are short-circuited. As a result the current gain of the lateral transistor can be varied by changing the area of the collector region.

Abstract: In a capacitance circuit having a capacitance element which exhibits a breakdown characteristic and which generates noises at breakdown, the improvement comprising a constant-voltage element, which has a lower breakdown voltage than the capacitance element and a lower noise level than the capacitance element in the state of breakdown, connected in parallel with the capacitance element. The voltage across the capacitance element is clamped at the breakdown voltage of the constant-voltage element, so that the capacitance element is prevented from breaking down and thus generating noise components.