Patents by Inventor Nobuaki Kakinuma

Nobuaki Kakinuma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8426859
    Abstract: A semiconductor device includes a semiconductor layer, a first insulating layer, a gate electrode which is formed on the first insulating layer and has a portion overlapping a channel region of the semiconductor layer with the first insulating layer sandwiched in between, a second insulating layer which is formed on the first insulating layer and covers the gate electrode, and a capacitor electrode which is formed on the second insulating layer and has a portion facing the gate electrode with the second insulating layer sandwiched in between. The second insulating layer has a thin portion, whose thickness is thinner than that of the second insulating layer in surrounding regions, on the portion of the gate electrode overlapping the channel region. A part of the capacitor electrode faces the portion of the gate electrode overlapping the channel region with the thin portion of the second insulating layer sandwiched in between.
    Type: Grant
    Filed: February 15, 2012
    Date of Patent: April 23, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventor: Nobuaki Kakinuma
  • Publication number: 20120211750
    Abstract: A semiconductor device includes a semiconductor layer, a first insulating layer, a gate electrode which is formed on the first insulating layer and has a portion overlapping a channel region of the semiconductor layer with the first insulating layer sandwiched in between, a second insulating layer which is formed on the first insulating layer and covers the gate electrode, and a capacitor electrode which is formed on the second insulating layer and has a portion facing the gate electrode with the second insulating layer sandwiched in between. The second insulating layer has a thin portion, whose thickness is thinner than that of the second insulating layer in surrounding regions, on the portion of the gate electrode overlapping the channel region. A part of the capacitor electrode faces the portion of the gate electrode overlapping the channel region with the thin portion of the second insulating layer sandwiched in between.
    Type: Application
    Filed: February 15, 2012
    Publication date: August 23, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Nobuaki Kakinuma