Abstract: An ultraviolet light emitting device comprises: a first substrate having a main surface; a second substrate facing the main surface of the first substrate; a gas in a space between the first substrate and the second substrate; electrodes directly or indirectly on the main surface of the first substrate; a dielectric layer that is located directly or indirectly on the main surface of the first substrate and covers the electrodes; and a first light-emitting layer. The first light-emitting layer is located directly or indirectly on the dielectric layer and emits ultraviolet light in the gas due to electrical discharge between the electrodes. The first light-emitting layer is thicker in first regions on the dielectric layer than in second regions. The second regions include at least part of regions directly above the electrodes.

Abstract: An ultraviolet irradiation apparatus includes: a first substrate; a second substrate; electrodes disposed directly or indirectly on the first substrate; a dielectric layer covering the electrodes; a sealant joining together the first and second substrates; a light-emitting layer that is disposed directly or indirectly on the dielectric layer and/or a surface of the second substrate; and a reaction vessel disposed directly or indirectly on a surface of the second substrate. The reaction vessel includes a tubular structure, an inlet channel and an outlet channel. The tubular structure has a ratio ha/hc of 5 to 10, where ha is a diameter of a circle inscribed in an inner bottom surface of the tubular structure, and hc is an inner height of the tubular structure.

Abstract: A light-emitting apparatus includes an excitation light source that emits first light; a light-emitting device on an optical path of the first light, the light-emitting device emitting second light having a wavelength in air; and a first converging lens on an optical path of the second light. The light-emitting device comprises: a photoluminescent layer that emits the second light by being excited by the first light; and a light-transmissive layer on the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a surface structure comprising projections or recesses arranged perpendicular to a thickness direction of the photoluminescent layer. At least one of the photoluminescent layer and the light-transmissive layer has a light emitting surface perpendicular to the thickness direction, the second light emitted from the light emitting surface. The surface structure limits the directional angle of the second light emittied from the light emitting surface.

Abstract: A wavelength conversion member includes: a heat conducting layer; a sapphire substrate having a third surface directly contact with a second surface of the heat conducting layer and the fourth surface opposite to the third surface; and a phosphor layer having a fifth surface directly contact with the fourth surface and a sixth surface opposite to the fifth surface, the phosphor layer including phosphor. At least one of an area of a first surface and an area of the second surface of the heat conducting layer is at least 2800 times as large as an area of the sixth surface of the phosphor layer. At least one of an area of the third surface and an area of the fourth surface of the sapphire substrate is at least two times as large as the area of the sixth surface of the phosphor layer.

Abstract: An ultraviolet irradiation apparatus includes: a first substrate; a second substrate; electrodes disposed directly or indirectly on the first substrate; a dielectric layer covering the electrodes; a sealant joining together the first and second substrates; a light-emitting layer that is disposed directly or indirectly on the dielectric layer and/or a surface of the second substrate; and a reaction vessel disposed directly or indirectly on a surface of the second substrate. The reaction vessel includes a tubular structure, an inlet channel and an outlet channel. The tubular structure has a ratio ha/hc of 5 to 10, where ha is a diameter of a circle inscribed in an inner bottom surface of the tubular structure, and hc is an inner height of the tubular structure.

Abstract: An ultraviolet light emitting device includes: a first substrate; a second substrate; a gas in a space between the first substrate and the second substrate; electrodes directly or indirectly on a first main surface of the first substrate; a dielectric layer that is located in a first region directly or indirectly on the first main surface of the first substrate and covers the electrodes, the dielectric layer being not located in a second region directly or indirectly on the first main surface of the first substrate, the second region being different from the first region, the first region including regions in which the electrodes are located; and a light-emitting layer that is located in the second region and/or located directly or indirectly on at least one of second and third main surfaces of the second substrate and emits the ultraviolet light in the gas due to electrical discharge between the electrodes.

Abstract: An ultraviolet light emitting device comprises: a first substrate having a main surface; a second substrate facing the main surface of the first substrate; a gas in a space between the first substrate and the second substrate; electrodes directly or indirectly on the main surface of the first substrate; a dielectric layer that is located directly or indirectly on the main surface of the first substrate and covers the electrodes; and a first light-emitting layer. The first light-emitting layer is located directly or indirectly on the dielectric layer and emits ultraviolet light in the gas due to electrical discharge between the electrodes. The first light-emitting layer is thicker in first regions on the dielectric layer than in second regions. The second regions include at least part of regions directly above the electrodes.

Abstract: A light-emitting apparatus includes; a light-emitting device including a photoluminescent layer that receives excitation light and emits light including first light having a wavelength ?a in air, and a light-transmissive layer located on or near the photoluminescent layer; and an optical fiber that receives the light from the photoluminescent layer at one end of the optical fiber and emits the received light from the other end thereof. A surface structure is defined on at least one of the photoluminescent layer and the light-transmissive layer, and the surface structure has projections or recesses or both and limits a directional angle of the first light having the wavelength ?a in air.

Abstract: A wavelength conversion element includes a phosphor layer including phosphor particles configured to be excited by light from a light source and a matrix located among the phosphor particles; and a column-shaped structural body including at least two kinds of column-shaped bodies periodically arranged and in contact with the phosphor layer. The column-shaped bodies have different heights and/or different thicknesses. The column-shaped structural body is a photonic crystal.

Abstract: A lamp includes: first and second semiconductor light-emitting elements adapted to emit excitation light; a wavelength conversion element adapted to convert the excitation light into light having a peak wavelength different from that of the excitation light; and a concave mirror adapted to reflect the excitation light emitted from the semiconductor light-emitting elements to the wavelength conversion element and reflect the light from the wavelength conversion element toward an outside of the lamp. A distance y1 from an optical axis of the first semiconductor light-emitting element to an optical axis of the concave mirror satisfies (D+Dphos)/2?y1?4f, and a distance y2 from an optical axis of the second semiconductor light-emitting element to the optical axis of the concave mirror satisfies 4f<y2?R.

Abstract: A wavelength conversion member includes a heat conductor, a light guide path and a wavelength converter. The heat conductor has a recessed portion and an opening extending through the heat conductor. The light guide path includes a transparent material with which the opening is filled. The light guide path includes a light exit port disposed on a side of the recessed portion and a light incident port disposed on a side opposite to the recessed portion. The wavelength converter converts first light having a first peak wavelength incident through the light guide path into second light having a second peak wavelength different from the first peak wavelength. The wavelength converter is disposed in contact with the heat conductor, at least a part of the wavelength converter being embedded in the recessed portion.

Abstract: Provided are a turbine facility, in which iron oxide particle scale that adheres to inner surfaces of boiler tubes and impedes heat transfer can be efficiently removed from heater drainage water; and a water treatment method for heater drainage water in the turbine facility. The turbine facility includes a boiler 9, steam turbines 12 and 16, a condenser 1, feedwater heaters 5 and 8 which are interposed in water supply lines 4 and 6 that supply condensate condensed by the condenser 1 to the boiler 9, and in which part of steam supplied from the steam turbine 12 to a repeater is extracted as extraction steam, and the feedwater is heated using the extraction steam, and a filtration device 19 in which heater drainage water discharged from the low-pressure feedwater heater 5 is filtered and supplied to the water supply system for recovery. The filtration device 19 includes a filter having a pore size of 1 to 5 ?m.

Abstract: A wavelength conversion element includes a phosphor layer including phosphor particles configured to be excited by light from a light source and a matrix located among the phosphor particles; and a column-shaped structural body including at least two kinds of column-shaped bodies periodically arranged and in contact with the phosphor layer. The column-shaped bodies have different heights and/or different thicknesses. The column-shaped structural body is a photonic crystal.

Abstract: In order to enhance charge and discharge efficiency and to improve cycle characteristics by increasing a facing area between a positive electrode active material and a negative electrode active material, in a negative electrode for lithium secondary battery having a current collector and an active material layer carried on the current collector, the active material layer includes a plurality of columnar particles. The columnar particles include an element of silicon, and are tilted toward the normal direction of the current collector. Angle ? formed between the columnar particles and the normal direction of the current collector is preferably 10°??<90°.

Abstract: A wavelength conversion element disclosed in the present application includes a phosphor layer including a plurality of phosphor particles and a matrix that is located among the plurality of phosphor particles and is formed of zinc oxide. The zinc oxide is columnar crystals or a single crystal in a c-axis orientation.

Abstract: A wavelength conversion element includes: a plurality of phosphor particles; a first matrix located among a part of the plurality of phosphor particles and formed of zinc oxide in a c-axis orientation; and a second matrix located among a remaining part of the plurality of phosphor particles and formed of a material having a refractive index that is lower than a refractive index of the zinc oxide.

Abstract: A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: A wavelength conversion element disclosed in the present application includes a phosphor layer including a plurality of phosphor particles and a matrix that is located among the plurality of phosphor particles and is formed of zinc oxide. The zinc oxide is columnar crystals or a single crystal in a c-axis orientation.

Abstract: A wavelength conversion element includes: a plurality of phosphor particles; a first matrix located among a part of the plurality of phosphor particles and formed of zinc oxide in a c-axis orientation; and a second matrix located among a remaining part of the plurality of phosphor particles and formed of a material having a refractive index that is lower than a refractive index of the zinc oxide.

Abstract: A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.