Patents by Inventor Nobuaki Sugimura
Nobuaki Sugimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240117278Abstract: An object of the present invention is to provide a treatment liquid having excellent removability of a hydrophobic anticorrosion agent and excellent suppression property of copper surface roughness, a cleaning method of a semiconductor substrate, and a manufacturing method of a semiconductor element. The treatment liquid of the present invention contains at least one specific compound selected from the group consisting of a quaternary ammonium compound including a quaternary ammonium cation having a total number of carbon atoms of 5 or more and a quaternary phosphonium compound including a quaternary phosphonium cation having a total number of carbon atoms of 5 or more, a sulfur-containing compound, and a solvent.Type: ApplicationFiled: December 1, 2023Publication date: April 11, 2024Applicant: FUJIFILM CorporationInventors: Nobuaki SUGIMURA, Tetsuya Kamimura
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Publication number: 20240026254Abstract: An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent cleaning performance and excellent ruthenium oxide dissolving ability in a case of being applied as a cleaning liquid after a CMP treatment of a semiconductor substrate including a metal film. A cleaning liquid for a semiconductor substrate according to the present invention is a cleaning liquid for a semiconductor substrate, which is used for cleaning a semiconductor substrate, where the cleaning liquid contains at least one purine compound selected from the group consisting of purine and a purine derivative and a compound represented by Formula (A).Type: ApplicationFiled: July 21, 2023Publication date: January 25, 2024Applicant: FUJIFILM CorporationInventors: Shimpei YAMADA, Tetsuya KAMIMURA, Naoko OUCHI, Naotsugu MURO, Nobuaki SUGIMURA, Yuta SHIGENOI
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Publication number: 20230340326Abstract: A chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids.Type: ApplicationFiled: June 27, 2023Publication date: October 26, 2023Applicant: FUJIFILM CorporationInventors: Nobuaki SUGIMURA, Tomonori Takahashi, Hiroyuki Seki, Atsushi Mizutani
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Publication number: 20230279294Abstract: Objects of the present invention are to provide a composition having excellent dissolving ability for a transition metal-containing substance (particularly, a Ru-containing substance) and to provide a method for treating a substrate. The composition according to an embodiment of the present invention contains at least one iodic acid compound selected from the group consisting of periodic acid, iodic acid, and salts thereof, and a compound represented by Formula (1).Type: ApplicationFiled: March 2, 2023Publication date: September 7, 2023Applicant: FUJIFILM CorporationInventors: Moe Narita, Nobuaki Sugimura
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Patent number: 11732190Abstract: The present invention provides a chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment of the present invention includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids.Type: GrantFiled: July 28, 2020Date of Patent: August 22, 2023Assignee: FUJIFILM CorporationInventors: Nobuaki Sugimura, Tomonori Takahashi, Hiroyuki Seki, Atsushi Mizutani
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Publication number: 20230223272Abstract: The present invention provides a composition having an excellent dissolving ability for a transition metal-containing substance and a method for treating a substrate. The composition according to an embodiment of the present invention contains at least one oxohalogen acid compound selected from the group consisting of hypochlorous acid, chlorous acid, chloric acid, bromic acid, and salts thereof and a compound represented by Formula (1), in which a content of the compound represented by Formula (1) is 1.0% to 25.0% by mass with respect to a total mass of the composition.Type: ApplicationFiled: February 24, 2023Publication date: July 13, 2023Applicant: FUJIFILM CorporationInventors: Moe NARITA, Nobuaki SUGIMURA
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Publication number: 20230017832Abstract: The present invention provides a treatment liquid that allows a treated portion to have excellent smoothness in a case where SiGe is etched with the treatment liquid. The present invention also provides a treatment liquid container relating to the treatment liquid. The treatment liquid according to an embodiment of the present invention contains a fluoride ion source, an oxidant, and an additive, in which the additive is one or more kinds of substances selected from the group consisting of predetermined compounds.Type: ApplicationFiled: August 31, 2022Publication date: January 19, 2023Applicant: FUJIFILM CorporationInventor: Nobuaki SUGIMURA
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Patent number: 11505743Abstract: The present invention provides a chemical solution which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated. Furthermore, the present invention provides a method of treating a substrate. The chemical solution according to an embodiment of the present invention is used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of specific hypochlorous acids selected from the group consisting of hypochlorous acid and a salt thereof and contains one or more kinds of specific anions selected from the group consisting of ClO3? and Cl?. In a case where the chemical solution contains one kind of the specific anion, the content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution.Type: GrantFiled: March 4, 2021Date of Patent: November 22, 2022Assignee: FUJIFILM CorporationInventors: Nobuaki Sugimura, Tomonori Takahashi, Hiroyuki Seki
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Patent number: 11479863Abstract: The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO42?, NO3?, PO43?, and BO33?. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution.Type: GrantFiled: February 24, 2021Date of Patent: October 25, 2022Assignee: FUJIFILM CorporationInventors: Nobuaki Sugimura, Tomonori Takahashi, Hiroyuki Seki
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Patent number: 11466209Abstract: The present invention provides a chemical solution which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated. Furthermore, the present invention provides a method of treating a substrate. The chemical solution according to an embodiment of the present invention is used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of specific hypochlorous acids selected from the group consisting of hypochlorous acid and a salt thereof and contains one or more kinds of specific anions selected from the group consisting of ClO3? and Cl?. In a case where the chemical solution contains one kind of the specific anion, the content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution.Type: GrantFiled: March 4, 2021Date of Patent: October 11, 2022Assignee: FUJIFILM CorporationInventors: Nobuaki Sugimura, Tomonori Takahashi, Hiroyuki Seki
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Patent number: 11274250Abstract: The present invention provides a chemical solution, which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated, and a treatment method using the chemical solution. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate and includes periodic acids and a compound including one or more kinds of anions selected from the group consisting of IO3?, I?, and I3?, in which a content of the compound including anions with respect to a total mass of the chemical solution is 5 ppb by mass to 1% by mass.Type: GrantFiled: July 9, 2020Date of Patent: March 15, 2022Assignee: FUJIFILM CorporationInventors: Tomonori Takahashi, Nobuaki Sugimura, Hiroyuki Seki
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Patent number: 11239093Abstract: The present invention provides a method for treating a substrate, which can remove transition metal-containing substances on a substrate with high efficiency while inhibiting cerium from remaining on the surface of the treated substrate. Furthermore, the present invention provides a method for manufacturing a semiconductor device including the method for treating a substrate, and a kit for treating a substrate that is applicable to the method for treating a substrate.Type: GrantFiled: July 27, 2020Date of Patent: February 1, 2022Assignee: FUJIFILM CorporationInventors: Tomonori Takahashi, Nobuaki Sugimura, Hiroyuki Seki
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Publication number: 20210189235Abstract: The present invention provides a chemical solution which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated. Furthermore, the present invention provides a method of treating a substrate. The chemical solution according to an embodiment of the present invention is used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of specific hypochlorous acids selected from the group consisting of hypochlorous acid and a salt thereof and contains one or more kinds of specific anions selected from the group consisting of ClO3? and Cl?. In a case where the chemical solution contains one kind of the specific anion, the content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution.Type: ApplicationFiled: March 4, 2021Publication date: June 24, 2021Applicant: FUJIFILM CorporationInventors: Nobuaki SUGIMURA, Tomonori TAKAHASHI, Hiroyuki SEKI
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Publication number: 20210180192Abstract: The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO42?, NO3?, PO43?, and BO33?. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution.Type: ApplicationFiled: February 24, 2021Publication date: June 17, 2021Applicant: FUJIFILM CorporationInventors: Nobuaki SUGIMURA, Tomonori TAKAHASHI, Hiroyuki SEKI
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Publication number: 20200357657Abstract: The present invention provides a method for treating a substrate, which can remove transition metal-containing substances on a substrate with high efficiency while inhibiting cerium from remaining on the surface of the treated substrate. Furthermore, the present invention provides a method for manufacturing a semiconductor device including the method for treating a substrate, and a kit for treating a substrate that is applicable to the method for treating a substrate.Type: ApplicationFiled: July 27, 2020Publication date: November 12, 2020Applicant: FUJIFILM CorporationInventors: Tomonori TAKAHASHI, Nobuaki SUGIMURA, Hiroyuki SEKI
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Publication number: 20200354632Abstract: The present invention provides a chemical solution, which demonstrates excellent etching performance for transition metal-containing substances and has excellent defect inhibition performance, a method for manufacturing the chemical solution, and a method for treating a substrate. The chemical solution according to an embodiment of the present invention includes one or more kinds of periodic acids selected from the group consisting of a periodic acid and a salt thereof, one or more kinds of first metal components selected from the group consisting of Ti and Zr, and water. In a case where the chemical solution includes one kind of first metal component, a content of the one kind of first metal component is 1 ppt by mass to 100 ppm by mass with respect to a total mass of the periodic acids.Type: ApplicationFiled: July 28, 2020Publication date: November 12, 2020Applicant: FUJIFILM CorporationInventors: Nobuaki SUGIMURA, Tomonori TAKAHASHI, Hiroyuki SEKI, Atsushi MIZUTANI
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Publication number: 20200347299Abstract: The present invention provides a chemical solution, which has an excellent dissolving ability for a transition metal-containing substance and can realize excellent smoothness of a portion to be treated, and a treatment method using the chemical solution. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate and includes periodic acids and a compound including one or more kinds of anions selected from the group consisting of IO3?, I?, and I3?, in which a content of the compound including anions with respect to a total mass of the chemical solution is 5 ppb by mass to 1% by mass.Type: ApplicationFiled: July 9, 2020Publication date: November 5, 2020Applicant: FUJIFILM CorporationInventors: Tomonori TAKAHASHI, Nobuaki Sugimura, Hiroyuki Seki