Abstract: Both a system and method for optically powering a network component, such as the transponder of a picocell, is provided. The system includes a vertical cavity surface emitting laser (VCSEL) for processing an input signal, a remotely-located optical power source, and an optical fiber for conducting optical power from the source to the VCSEL. The VCSEL may be electrically biased from current generated by an optical-electro converter coupled to the fiber, or directly optically biased from light from the optical power source. A bias tee is connected between an input signal and an input of the VCSEL such that the VCSEL generates a modulated optical signal. The system may be the transponder of a picocell system where the VCSEL generates an optical uplink signal conducted to a head-end circuit via the same or a separate optical fiber.

Abstract: The present invention is directed to a method and system for providing a three-level current scheme to a semiconductor laser to control beam wavelength and laser temperature. A first current is received into a gain section of the semiconductor laser and at least one other current is received into a DBR and/or phase section of the semiconductor laser. This other current(s) is pulse-width modulated based upon a required temperature value. An output beam is generated by the semiconductor laser based upon the received first current and the received pulse-width modulated current(s).

Abstract: Both a system and method are provided for modulating the intensity of an output beam generated by semiconductor laser. The exemplary system includes a source of pulsating current connected to the laser that generates a pulsating beam of laser light, an external modulator having an input that receives the pulsating beam, and an output controlled by pulsating control signal, wherein the output beam transmitted by the external modulator output is modulated by changing a relative phase angle between the pulsating current powering the laser, and the control signal of the external modulator over time. The external modulator may be an intensity-type modulator whose output is controlled by a gate signal having a constant phase, and the source of pulsating current powering the laser may be variable phase in order to modulate the output beam with an external modulator having a simple structure.

Abstract: A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature in degrees Centigrade, and fabricating at least half of the high index layers of the distributed Bragg reflector (DBR) of the VCSEL from AlGaInAs or other material that can be epitaxially grown on the InP substrate to have a band gap equal to or greater than the sum of the photon energy (in milli-electron volts) plus the sum of the maximum operating temperature plus 110 divided by 1.96.

Abstract: Both a system and method for optically powering a network component, such as the transponder of a picocell, is provided. The system includes a vertical cavity surface emitting laser (VCSEL) for processing an input signal, a remotely-located optical power source, and an optical fiber for conducting optical power from the source to the VCSEL. The VCSEL may be electrically biased from current generated by an optical-electro converter coupled to the fiber, or directly optically biased from light from the optical power source. A bias tee is connected between an input signal and an input of the VCSEL such that the VCSEL generates a modulated optical signal. The system may be the transponder of a picocell system where the VCSEL generates an optical uplink signal conducted to a head-end circuit via the same or a separate optical fiber.

Abstract: A method of fabricating an indium phosphide-based vertical cavity surface emitting laser (VCSEL) having a high reflectivity distributed Bragg reflector (DBR) that is particularly adapted for emitting a light having a center wavelength of around 1.30 micrometers. The method includes the steps of selecting a specific operating wavelength, determining the photon energy corresponding to the selected operating wavelength, selecting a maximum operating temperature in degrees Centigrade, and fabricating at least half of the high index layers of the distributed Bragg reflector (DBR) of the VCSEL from AlGaInAs or other material that can be epitaxially grown on the InP substrate to have a band gap equal to or greater than the sum of the photon energy (in milli-electron volts) plus the sum of the maximum operating temperature plus 110 divided by 1.96.

Abstract: A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110).

Abstract: A semiconductor device (100) includes a misoriented substrate (240) having a surface area inclined in a range of about 8 to 40 degrees from the {100} plane. At least one highly doped P-type semiconductor layer (106) of a first semiconductor material doped with Carbon (C) is grown over the surface area. At least one highly doped N-type semiconductor layer (104) of a second semiconductor material is grown over the surface area and near the at least one highly doped P-type semiconductor layer (106). A moderately doped P-type layer (60) is grown over the surface area, wherein the moderately doped P-type layer 60 has a third semiconductor material doped with a dopant selected as a member from the group consisting of Zn, Be, Cd and Mg. The devices 100 include VCSELs having tunnel junctions (110) and semiconductor DBRs (230) composed of AlGaInAs/InP or GaInAs/InP layers (2308/2302) on misoriented substrates 240.

Abstract: A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110).

Abstract: A tunnel junction device (102) with minimal hydrogen passivation of acceptors includes a p-type tunnel junction layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel junction layer (104) of a second semiconductor material includes indium, gallium, arsenic and one of aluminum and phosphorous. The junction between the p-type and an-type tunnel junction layers forms a tunnel junction (110).

Abstract: A surface-emitting laser in which a first distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, an active layer and a second distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, are formed on a semiconductor substrate, successively, including a current stenosed layer having an oxidized area in a remote junction surface therein between at least one of the first and the second distributed Bragg reflectors and the active layer, and plural capacitance-reducing layers, each layer having a smaller oxidized area than the oxidized area in a remote junction surface constituting the current stenosed layer, at least one of the first and the second distributed Bragg reflectors, the plural capacitance-reducing layers, the current stenosed layer and the active layer being arranged successively, one of the first and the second distributed Bragg reflectors constituting a first conductive type Bragg reflector, the other co