Abstract: A simple structure will achieve dissipation of heat from the area inside a voice-coil bobbin and a diaphragm without a reduction in sound quality, in which a process for assembling a speaker device with high accuracy is performed in a simple operation. A speaker device comprises a recess-shaped frame 5 which supports, through an edge 9, a vibration system member 68 provided with a diaphragm 8 coupled to a voice-coil bobbin 6, and a magnetic circuit 4 which comprises an approximately ring-shaped magnet 2 and an approximately ring-shaped plate 3 which are mounted on a yoke 1 disposed in the frame 5, and a magnet gap 4g in which a voice coil 7 wound on a voice-coil bobbin 6 is disposed. In the magnetic circuit 4 a through hole 45 extending in the vibration direction of the diaphragm is fitted over a center boss 51 of a shape protruding from the bottom of the frame 5 in the direction of the sound emission, so that the magnetic circuit 4 is positioned and fixed with respect to the frame 5.

Abstract: A simple structure will achieve dissipation of heat from the area inside a voice-coil bobbin and a diaphragm without a reduction in sound quality, in which a process for assembling a speaker device with high accuracy is performed in a simple operation. A speaker device comprises a recess-shaped frame 5 which supports, through an edge 9, a vibration system member 68 provided with a diaphragm 8 coupled to a voice-coil bobbin 6, and a magnetic circuit 4 which comprises an approximately ring-shaped magnet 2 and an approximately ring-shaped plate 3 which are mounted on a yoke 1 disposed in the frame 5, and a magnet gap 4g in which a voice coil 7 wound on a voice-coil bobbin 6 is disposed. In the magnetic circuit 4 a through hole 45 extending in the vibration direction of the diaphragm is fitted over a center boss 51 of a shape protruding from the bottom of the frame 5 in the direction of the sound emission, so that the magnetic circuit 4 is positioned and fixed with respect to the frame 5.

Abstract: An article sales data processing apparatus has an electronic tag data memory, and an article item buffer. A CPU judges whether the same data as the electronic tag data read by the electronic tag reader is stored in the electronic tag data memory. If the same data is already stored, the CPU discards the electronic tag data read from an electronic tag. If the same data is not stored, the CPU adds the electronic tag data read from an electronic tag to the electronic tag data memory. Based on this electronic tag data, the CPU obtains article sales data, and adds the data to the article item buffer. When registration/closing of one transaction is declared, the CPU executes closing of one transaction based on the article sales data in the article item buffer. After the closing is completed, the CPU clears the article item buffer.

Abstract: It is an object of the present invention to provide an improved speaker device which can reduce parts-cost by simplifying a cutting treatment for processing yoke and center pole, ensure an easy operation of installing short rings and an extremely simple assembling. The speaker device has a center pole on the center of a yoke. The center pole includes a center pole lower portion integrally formed with the yoke, a disc-like member mounted on the center pole lower portion, and a short ring attached to the surface of the center pole lower portion.

Abstract: A store server transmits an article code and price information of an article whose price is to be changed to a radio tag reader/writer. The radio tag reader/writer transmits information received from the store server by means of a radio signal. When receiving the radio signal indicating an article code which coincides with a code stored in the radio tag, the radio tag attached to each article changes stored price information. When receiving price information stored in the radio tag, a POS terminal processes sales information of the article to which the radio tag is attached according to a selling price corresponding to the price information.

Abstract: A speaker unit is fitted to a speaker-unit mounting hole of a baffle plate provided with the speaker-unit mounting hole. The speaker unit is fitted to at least one of service holes provided in a door panel (inner panel) of a door apparatus for a vehicle.

Abstract: In a floating-gate type nonvolatile memory cell, the second dielectric film between the floating gate and the control gate is made very higher in relative permittivity than the first dielectric film under the floating gate such that the relation .epsilon..sub.2 /.epsilon..sub.1 .gtoreq.13 and the relation t.sub.2 /t.sub.1 .gtoreq..epsilon..sub.2 /.epsilon..sub.1 hold, where .epsilon.and t represent relative permittivity and film thickness, respectively and subscripts 1 and 2 represent the first and second dielectric films, respectively. Strontium titanate, barium strontium titanate or lead zirconate-titanate is suitable as the material of the second dielectric film. In the case of, e.g. barium strontium titanate film, the proportion of Sr to Ba may vary in the direction of the film thickness. The second dielectric film may be made up of two (or more) different dielectric layers. The memory cell is low in writing and erasing voltages and excellent in endurance in terms of write/erase cycles.

Abstract: There is provided a metal-insulator-semiconductor gate insulating structure involved in a non-volatile memory device. A first insulating layer formed on the semiconductor substrate has a first dielectric constant .epsilon..sub.1 and a first thickness of t.sub.1. A second insulating layer formed on the first insulating layer layer has a second dielectric constant .epsilon..sub.2 and a second thickness of t.sub.2. A gate electrode of a metal layer is formed on the second insulating layer. The first and second dielectric constants .epsilon..sub.1 and .epsilon..sub.2 and the first and second thicknesses t.sub.1 and t.sub.2 satisfy the conditions of 20.ltoreq..epsilon..sub.2 /.epsilon..sub.1, and t.sub.2 /t.sub.1 .ltoreq..epsilon..sub.2 /.epsilon..sub.1.

Abstract: A method of manufacturing a semiconductor device, has the steps of forming an element on a semiconductor substrate, adhering an element formation surface of the semiconductor substrate to another substrate through an insulating adhesive layer, removing the semiconductor substrate till the element formation layer is exposed, forming an insulating film on the element formation layer, removing the insulating film at a portion where contact holes are to be formed to expose the element formation layer or till the underlying element formation layer is exposed to expose electrode wirings, and forming wiring patterns connected thereto. A bipolar transistor manufactured by this method is also disclosed.

Abstract: A method of epitaxying layers on a semiconductor substrate through apertures in an insulating layer formed on a substrate. The layers are grown from the substrate and extend on the insulating layer by reacting dichlorosilane, hydrogen chloride and a carrier gas flow in a chamber under reduced pressure. The layers are used for semiconductors device formation.

Abstract: A registration mark to be used for a micro-fine working technique such as LSI's includes a smaller protrusion pattern within a larger recess pattern formed in a surface of the semiconductor substrate. The recess and protrusion patterns are used for coarse and fine positioning, respectively. The protrusion pattern implements precise positioning because it is isolated from other regions.