Patents by Inventor Nobuhiro Karasawa

Nobuhiro Karasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200286946
    Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 10, 2020
    Inventors: Shingo Mandai, Cristiano L. Niclass, Nobuhiro Karasawa, Xiaofeng Fan, Arnaud Laflaquiere, Gennadiy A. Agranov
  • Patent number: 10658419
    Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.
    Type: Grant
    Filed: September 22, 2017
    Date of Patent: May 19, 2020
    Assignee: Apple Inc.
    Inventors: Shingo Mandai, Cristiano L. Niclass, Nobuhiro Karasawa, Xiaofeng Fan, Arnaud Laflaquiere, Gennadiy A. Agranov
  • Patent number: 10438987
    Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.
    Type: Grant
    Filed: September 22, 2017
    Date of Patent: October 8, 2019
    Assignee: Apple Inc.
    Inventors: Shingo Mandai, Cristiano L. Niclass, Nobuhiro Karasawa, Xiaofeng Fan, Arnaud Laflaquiere, Gennadiy A. Agranov
  • Publication number: 20180090536
    Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.
    Type: Application
    Filed: September 22, 2017
    Publication date: March 29, 2018
    Inventors: Shingo Mandai, Cristiano L. Niclass, Nobuhiro Karasawa, Xiaofeng Fan, Arnaud Laflaquiere, Gennadiy A. Agranov
  • Publication number: 20180090526
    Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.
    Type: Application
    Filed: September 22, 2017
    Publication date: March 29, 2018
    Inventors: Shingo Mandai, Cristiano L. Niclass, Nobuhiro Karasawa, Xiaofeng Fan, Arnaud Laflaquiere, Gennadiy A. Agranov
  • Patent number: 8786742
    Abstract: In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.
    Type: Grant
    Filed: October 19, 2012
    Date of Patent: July 22, 2014
    Assignee: Sony Corporation
    Inventors: Keiji Mabuchi, Nobuhiro Karasawa
  • Patent number: 8687101
    Abstract: A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: April 1, 2014
    Assignee: Sony Corporation
    Inventors: Isao Hirota, Kouichi Harada, Nobuhiro Karasawa, Yasushi Maruyama, Yoshikazu Nitta, Hiroyuki Terakago, Hajime Takashima, Hideo Nomura
  • Patent number: 8598640
    Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
    Type: Grant
    Filed: August 17, 2011
    Date of Patent: December 3, 2013
    Assignee: Sony Corporation
    Inventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
  • Patent number: 8319867
    Abstract: In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur. According to this invention, an insulation film 39 is provided on a rear surface on a silicon substrate 31 and a transparent electrode 40 is further provided thereon, and by applying a negative voltage with respect to the potential of the silicon substrate 31 from a voltage supply source 41 to the insulation film 39 through the transparent electrode 40, positive holes are accumulated on a silicon boundary surface of the substrate rear surface side and a structure equivalent to a state in which a positive hole accumulation layer exists on aforesaid silicon boundary surface is to be created. Thus, various problems in the related art can be avoided.
    Type: Grant
    Filed: February 4, 2009
    Date of Patent: November 27, 2012
    Assignee: Sony Corporation
    Inventors: Keiji Mabuchi, Nobuhiro Karasawa
  • Patent number: 8233065
    Abstract: A charge detection device includes: a substrate having a first conductive type of predetermined region; a second conductive type of drain region disposed in the predetermined region of the substrate; a second conductive type of source region disposed in the predetermined region of the substrate; a second conductive type of channel region disposed between the drain region and the source region; a gate formed via an insulating film on the channel region; a second conductive type of charge accumulation region disposed in the predetermined region of the substrate and changing a threshold voltage of a transistor having the drain region, the source region, and the gate by accumulating signal charges as a target to be measured; a first conductive type of channel barrier region disposed between the channel region and the charge accumulation region; and a charge sweep region sweeping away the signal charges accumulated in the charge accumulation region.
    Type: Grant
    Filed: January 13, 2010
    Date of Patent: July 31, 2012
    Assignee: Sony Corporation
    Inventors: Shunsuke Kameda, Nobuhiro Karasawa
  • Publication number: 20120113292
    Abstract: A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.
    Type: Application
    Filed: January 12, 2012
    Publication date: May 10, 2012
    Applicant: SONY CORPORATION
    Inventors: Isao Hirota, Kouichi Harada, Nobuhiro Karasawa, Yasushi Maruyama, Yoshikazu Nitta, Hiroyuki Terakago, Hajime Takashima, Hideo Nomura
  • Patent number: 8169520
    Abstract: A solid-state imaging apparatus including a plurality of sensors that are formed on a substrate on a pixel basis and photoelectrically convert the light incident from a first surface side of the substrate, and a readout circuit that is formed on a second surface side of the substrate, which is the opposite side to the first surface side, and processes a signal from the plurality of sensors. The readout circuit includes a plurality of transistors and the transistors are disposed in a region between the pixels in an aligned manner.
    Type: Grant
    Filed: November 3, 2009
    Date of Patent: May 1, 2012
    Assignee: Sony Corporation
    Inventors: Shin Iwabuchi, Nobuhiro Karasawa
  • Patent number: 8159584
    Abstract: A solid-state imaging apparatus including a plurality of sensors that are formed on a substrate on a pixel basis and photoelectrically convert the light incident from a first surface side of the substrate, and a readout circuit that is formed on a second surface side of the substrate, which is the opposite side to the first surface side, and processes a signal from the plurality of sensors. The readout circuit includes a plurality of transistors and the transistors are disposed in a region between the pixels in an aligned manner.
    Type: Grant
    Filed: November 3, 2009
    Date of Patent: April 17, 2012
    Assignee: Sony Corporation
    Inventors: Shin Iwabuchi, Nobuhiro Karasawa
  • Patent number: 8106983
    Abstract: A solid-state imaging device includes pixel cells that are formed on a substrate having a first substrate surface side, on which light is irradiated, and a second substrate surface side, on which elements are formed, and separated by an adjacent cell group and an element separation layer for each of the pixel cells or with plural pixel cells as a unit. Each of the pixel cells has a first conductive well formed on the first substrate surface side and a second conductive well formed on the second substrate surface side. The first conductive well receives light from the first substrate surface side and has a photoelectric conversion function and a charge accumulation function for the received light. A transistor that detects accumulated charges in the first conductive well and has a threshold modulation function is formed in the second conductive well.
    Type: Grant
    Filed: December 9, 2008
    Date of Patent: January 31, 2012
    Assignee: Sony Corporation
    Inventors: Isao Hirota, Kouichi Harada, Nobuhiro Karasawa, Yasushi Maruyama, Yoshikazu Nitta, Hiroyuki Terakago, Hajime Takashima, Hideo Nomura
  • Publication number: 20110298024
    Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
    Type: Application
    Filed: August 17, 2011
    Publication date: December 8, 2011
    Applicant: SONY CORPORATION
    Inventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
  • Patent number: 8017984
    Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
    Type: Grant
    Filed: November 25, 2008
    Date of Patent: September 13, 2011
    Assignee: Sony Corporation
    Inventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
  • Patent number: 7935563
    Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
    Type: Grant
    Filed: November 25, 2008
    Date of Patent: May 3, 2011
    Assignee: Sony Corporation
    Inventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
  • Patent number: 7928487
    Abstract: A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
    Type: Grant
    Filed: August 28, 2008
    Date of Patent: April 19, 2011
    Assignee: Sony Corporation
    Inventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
  • Patent number: 7821093
    Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.
    Type: Grant
    Filed: November 25, 2008
    Date of Patent: October 26, 2010
    Assignee: Sony Corporation
    Inventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
  • Patent number: 7812874
    Abstract: A solid-state imaging apparatus includes a plurality of sensors that are formed on a substrate on a pixel basis and photoelectrically convert the light incident from a first surface side of the substrate, and a readout circuit that is formed on a second surface side of the substrate, which is the opposite side to the first surface side, and processes a signal from the plurality of sensors. The readout circuit includes a plurality of transistors and the transistors are disposed in a region between the pixels in an aligned manner.
    Type: Grant
    Filed: October 18, 2006
    Date of Patent: October 12, 2010
    Assignee: Sony Corporation
    Inventors: Shin Iwabuchi, Nobuhiro Karasawa