Abstract: A semiconductor manufacturing apparatus according to an embodiment includes a rotor, a nozzle, a first electrode, and a second electrode. The rotor is configured to hold a substrate and to rotate the substrate. The substrate has an outer-periphery portion and a circumferential edge. The circumferential edge is located outside the outer-periphery portion. The nozzle is configured to supply a resist liquid to the outer-periphery portion of the substrate. The first electrode is configured to receive a voltage that applies an electric charge to the resist liquid ejected from the nozzle. The second electrode is disposed at a position different from that of the first electrode. The second electrode is configured to receive a voltage that causes a Coulomb force to act on the resist liquid.

Abstract: A mask manufacturing method includes stacking a first antireflection layer on a first stacked body at a first film thickness so as to create a first transmissive type mask. In the first stacked body, a first semitransmissive layer, a first reflective layer, and a first transmissive substrate are stacked. The mask manufacturing method includes stacking a second antireflection layer on a second stacked body at a second film thickness so as to create a second transmissive type mask. In the second stacked body, a second semitransmissive layer, a second reflective layer, and a second transmissive substrate are stacked. The second film thickness is determined in accordance with a thermal expansion amount of the first mask.

Abstract: According to an embodiment, focus sensitivity information in which focus sensitivity expressing a relation between an aberration correction value set in an exposure device and a best focus when a pattern is formed on a first substrate by exposure of the exposure device using the aberration correction value, and the pattern are correlated is input. Moreover, on the basis of the focus sensitivity information and a surface height difference of a second substrate, the aberration correction value in which best focuses for a pattern group to be formed on the second substrate by exposure satisfy a first condition is calculated. In addition, the second substrate is exposed by the exposure device using the aberration correction value satisfying the first condition.

Abstract: A plurality of light sources are provided and are able to be independently turned on and turned off. The light sources have directionality in directions of shot regions. The light sources, which are turned on so as to correspond to the shape of the shot region, are selected, thereby preventing an imprint material outside the shot region from being cured when an imprint pattern in the shot region is cured.

Abstract: According to one embodiment, a value of a film thickness of a processing object disposed above a substrate is obtained. Then, a wavelength that provides a highest degree of intensity of signal light reflected when the signal light is incident onto the processing object having the value of the film thickness, based on wavelength selection reference information is selected. Then, a first instruction performing an alignment process to the substrate by use of signal light having a wavelength thus selected is generated. The wavelength selection reference information is information that includes a correlation between values of the film thickness of the processing object and degrees of intensity of the signal light, with respect to a plurality of wavelengths.

Abstract: According to an embodiment, focus sensitivity information in which focus sensitivity expressing a relation between an aberration correction value set in an exposure device and a best focus when a pattern is formed on a first substrate by exposure of the exposure device using the aberration correction value, and the pattern are correlated is input. Moreover, on the basis of the focus sensitivity information and a surface height difference of a second substrate, the aberration correction value in which best focuses for a pattern group to be formed on the second substrate by exposure satisfy a first condition is calculated. In addition, the second substrate is exposed by the exposure device using the aberration correction value satisfying the first condition.

Abstract: A mask manufacturing method includes stacking a first antireflection layer on a first stacked body at a first film thickness so as to create a first transmissive type mask. In the first stacked body, a first semitransmissive layer, a first reflective layer, and a first transmissive substrate are stacked. The mask manufacturing method includes stacking a second antireflection layer on a second stacked body at a second film thickness so as to create a second transmissive type mask. In the second stacked body, a second semitransmissive layer, a second reflective layer, and a second transmissive substrate are stacked. The second film thickness is determined in accordance with a thermal expansion amount of the first mask.

Abstract: A plurality of light sources are provided and are able to be independently turned on and turned off. The light sources have directionality in directions of shot regions. The light sources, which are turned on so as to correspond to the shape of the shot region, are selected, thereby preventing an imprint material outside the shot region from being cured when an imprint pattern in the shot region is cured.

Abstract: According to one embodiment, an imprint device includes a holding unit, a mounting unit, a moving unit, a curing unit, a pressing portion, and a detecting portion. The holding unit holds template having a pattern portion pressed onto a transfer portion provided on a substrate. The mounting unit mounts the substrate. The moving unit is provided on at least either the holding unit or the mounting unit. The moving unit moves the holding unit and the mounting unit in directions approaching each other or directions away from each other. The curing unit cures the transfer portion onto which the pattern portion of the template is pressed. The pressing portion pushes the template pressed onto the transfer portion in a direction intersecting a pressing direction of the template. The detecting portion detects a position of the template pushed by the pressing portion.

Abstract: A substrate holding apparatus includes a placing portion, a first depressurization unit, a second depressurization unit, a storage unit and a control unit. The placing portion includes a plurality of convex portions supporting a substrate, and includes a first region which faces a center portion of the substrate and second regions which face outer peripheral portions of the substrate. The first depressurization unit is configured to depressurize a space between the substrate and the first region. The second depressurization unit is configured to depressurize a space between the substrate and the second regions. The storage unit is configured to store shape information of the substrate. The control unit is configured to individually control each of the first depressurization unit and the second depressurization unit based on the shape information.

Abstract: In a pattern shape adjustment method according to one embodiment, a correspondence relation between a first shape feature amount of a first on-substrate pattern formed on a first substrate and a first laser band width of laser light as exposure light used when forming the first on-substrate pattern is acquired. Also, a second shape feature amount of a second on-substrate pattern actually formed on a second substrate is measured. Then, a second laser band width according to the shape of a third on-substrate pattern to be formed on a third substrate is calculated based on the correspondence relation and the second shape feature amount. Further, the third substrate is exposed to laser light having the second laser band width.

Abstract: According to one embodiment, an adjusting unit adjusts a refracting angle of incident light with respect to a substrate, a detector detects reflected light from the substrate, and a calculating unit calculates positional deviation of the pattern based on patterns respectively reflected in reflected lights obtained from the incident light generating N number of refracting angles with respect to the substrate, where N is an integer of two or greater.

Abstract: According to one embodiment, there is provided a mask alignment mark disposed on a photomask irradiated by an illumination optical system with illumination light from a direction inclined with respect to an optical axis and used to form a latent image on a substrate through a projection optical system. The mask alignment mark including a plurality of patterns arranged in a predetermined direction at a pitch of substantially P=?/{2×(1??)×(LNA)}, where ? is a ratio of a numerical aperture INA of illumination light incident on the photomask from the illumination optical system to a numerical aperture LNA of an object side of the projection optical system (INA)/(LNA), and ? is a wavelength of light.

Abstract: According to one embodiment, wafer lithography equipment includes an exposure unit transferring a circuit pattern onto a wafer, a measurement unit measuring a dimension of the circuit pattern and a calculator. The calculator includes calculating a first difference. The first difference is the difference between a first dimension and a second dimension. The first dimension is obtained by substituting a first exposure amount and a first focus distance into an approximate response surface function. The second dimension is measured by the measurement unit. The calculator also includes calculating a second difference. The second difference is the sum total of the first difference for all of the circuit patterns. The calculator also includes calculating a second exposure amount and a second focus distance causing the difference between the approximate response surface function and the second difference to be a minimum. The calculator also includes calculating a correction exposure amount.

Abstract: In a method of forming a mark pattern according to the embodiments, a film to be processed on a substrate is coated with a photosensitive film, and the photosensitive film is irradiated with exposure light via a mask. On the mask, a first circuit pattern having a first transmittance and a mark having a second transmittance and used to measure a superposition between films are arranged. By irradiating with the exposure light, a second circuit pattern having a first film thickness and a mark pattern having a second film thickness thinner than the first film thickness are formed on the substrate.

Abstract: According to one embodiment, a value of a film thickness of a processing object disposed above a substrate is obtained. Then, a wavelength that provides a highest degree of intensity of signal light reflected when the signal light is incident onto the processing object having the value of the film thickness, based on wavelength selection reference information is selected. Then, a first instruction performing an alignment process to the substrate by use of signal light having a wavelength thus selected is generated. The wavelength selection reference information is information that includes a correlation between values of the film thickness of the processing object and degrees of intensity of the signal light, with respect to a plurality of wavelengths.

Abstract: According to one embodiment, there is provided a mask set including a first mask and a second mask. The first mask includes a first device pattern and a first mark pattern. The first mark pattern is used for an inspection of a position of the first device pattern on a surface of the first mask. The second mask is used to perform multiple exposure on a substrate together with the first mask. The second mask includes a second device pattern and a second mark pattern. The second mark pattern is used for an inspection of a position of the second device pattern on a surface of the second mask. The second mark pattern includes a pattern corresponding to a pattern obtained by inverting the first mark pattern.

Abstract: According to an embodiment, a mask processing apparatus is provided. The mask processing apparatus includes a stage, a laser light source and a rotary mechanism. The stage is configured to hold a mask formed with a pattern to be transferred to a transfer target substrate. The laser light source is configured to output laser light that is radiated into the mask and thereby alters the mask. The rotary mechanism is configured to rotate the stage in an in-plane direction of a pattern formation surface of the mask.

Abstract: According to one embodiment, there is provided a mask alignment mark disposed on a photomask irradiated by an illumination optical system with illumination light from a direction inclined with respect to an optical axis and used to form a latent image on a substrate through a projection optical system. The mask alignment mark including a plurality of patterns arranged in a predetermined direction at a pitch of substantially P=?/{2×(1??)×(LNA)}, where ? is a ratio of a numerical aperture INA of illumination light incident on the photomask from the illumination optical system to a numerical aperture LNA of an object side of the projection optical system (INA)/(LNA), and ? is a wavelength of light.

Abstract: A measurement apparatus according to an embodiment includes an electron emission unit and a detection unit that detects a reflection electron reflected by a recessed shape pattern. In addition, the measurement apparatus includes a time measurement unit that measures a response time from when the electron beam is emitted to when the reflection electron is detected. Further, the measurement apparatus includes a bent amount calculation unit that calculates the amount of bent, i.e., a position deviation amount, between an upper surface portion and a bottom surface portion of the recessed shape pattern. The bent amount calculation unit calculates the amount of bent on the basis of a condition for determining the incidence path of the electron beam to the recessed shape pattern, and the response time.