Patents by Inventor Nobukata Okano
Nobukata Okano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10686291Abstract: A semiconductor light emitting element has a laminated structure formed by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor light emitting element satisfies ?I2>?I1, where ?I1 is an operating current range when the temperature of the active layer is T1, and ?I2 is the operating current range when the temperature of the active layer is T2 (where T2>T1). The semiconductor light emitting element satisfies P2>P1, where P1 is a maximum optical output emitted when the temperature of the active layer is T1, and P2 is the maximum optical output emitted when the temperature of the active layer is T2 (where T2>T1).Type: GrantFiled: December 17, 2015Date of Patent: June 16, 2020Assignee: Sony CorporationInventors: Hideki Watanabe, Katsunori Yanashima, Rintaro Koda, Moe Takeo, Nobukata Okano
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Patent number: 9911894Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.Type: GrantFiled: April 17, 2015Date of Patent: March 6, 2018Assignee: SONY CORPORATIONInventors: Akira Ohmae, Michinori Shiomi, Noriyuki Futagawa, Takaaki Ami, Takao Miyajima, Yuuji Hiramatsu, Izuho Hatada, Nobukata Okano, Shigetaka Tomiya, Katsunori Yanashima, Tomonori Hino, Hironobu Narui
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Publication number: 20180054039Abstract: A semiconductor light emitting element has a laminated structure formed by laminating a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. The semiconductor light emitting element satisfies ?I2>?I1, where ?I1 is an operating current range when the temperature of the active layer is T1, and ?I2 is the operating current range when the temperature of the active layer is T2 (where T2>T1). The semiconductor light emitting element satisfies P2>P1, where P1 is a maximum optical output emitted when the temperature of the active layer is T1, and P2 is the maximum optical output emitted when the temperature of the active layer is T2 (where T2>T1).Type: ApplicationFiled: December 17, 2015Publication date: February 22, 2018Inventors: Hideki WATANABE, Katsunori YANASHIMA, Rintaro KODA, Moe TAKEO, Nobukata OKANO
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Publication number: 20150228846Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.Type: ApplicationFiled: April 17, 2015Publication date: August 13, 2015Inventors: Akira Ohmae, Michinori Shiomi, Noriyuki Futagawa, Takaaki Ami, Takao Miyajima, Yuuji Hiramatsu, Izuho Hatada, Nobukata Okano, Shigetaka Tomiya, Katsunori Yanashima, Tomonori Hino, Hironobu Narui
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Patent number: 9034738Abstract: A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.Type: GrantFiled: September 21, 2006Date of Patent: May 19, 2015Assignee: SONY CORPORATIONInventors: Akira Ohmae, Michinori Shiomi, Noriyuki Futagawa, Takaaki Ami, Takao Miyajima, Yuuji Hiramatsu, Izuho Hatada, Nobukata Okano, Shigetaka Tomiya, Katsunori Yanashima, Tomonori Hino, Hironobu Narui
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Publication number: 20140151836Abstract: The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.Type: ApplicationFiled: February 5, 2014Publication date: June 5, 2014Applicant: Sony CorporationInventors: Hironobu Narui, Tomonori Hino, Nobukata Okano, Jugo Mitomo
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Patent number: 8680540Abstract: The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.Type: GrantFiled: January 3, 2007Date of Patent: March 25, 2014Assignee: Sony CorporationInventors: Hironobu Narui, Tomonori Hino, Nobukata Okano, Jugo Mitomo
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Patent number: 8575643Abstract: A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.Type: GrantFiled: October 23, 2007Date of Patent: November 5, 2013Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Tomonori Hino, Nobukata Okano, Hisayoshi Kuramochi, Tatsuo Ohashi
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Patent number: 8409893Abstract: A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the <110> direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?U; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?D (where ?D??U).Type: GrantFiled: January 23, 2012Date of Patent: April 2, 2013Assignee: Sony CorporationInventors: Kiyotaka Yashima, Yoshinari Kiwaki, Kamada Michiru, Sachio Karino, Hironobu Narui, Nobukata Okano
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Patent number: 8320421Abstract: A semiconductor light-emitting device configured to decrease a leakage current in a current-blocking layer and including a light-emitting portion composed of a first compound semiconductor layer having a first conductivity type, an active layer, and a second layer having a second conductivity type, and a current-blocking layer in contact with the side of the light-emitting portion and composed of a third layer having the first conductivity type and a fourth layer having the second conductivity type.Type: GrantFiled: May 20, 2008Date of Patent: November 27, 2012Assignee: Sony CorporationInventors: Sachio Karino, Eiji Takase, Makoto Oogane, Tsuyoshi Nagatake, Michiru Kamada, Hironobu Narui, Nobukata Okano
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Patent number: 8254790Abstract: An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.Type: GrantFiled: June 14, 2011Date of Patent: August 28, 2012Assignee: Sony CorporationInventors: Nobukata Okano, Yoshiaki Watanabe, Jugo Mitomo, Tomomori Hino, Hironobu Narui
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Patent number: 8217407Abstract: A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.Type: GrantFiled: December 1, 2010Date of Patent: July 10, 2012Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Tomonori Hino, Nobukata Okano, Hisayoshi Kuramochi, Yuichiro Kikuchi, Tatsuo Ohashi
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Publication number: 20120122257Abstract: A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the <110> direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?U; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?D (where ?D??U).Type: ApplicationFiled: January 23, 2012Publication date: May 17, 2012Applicant: Sony CorporationInventors: Kiyotaka Yashima, Yoshinari Kiwaki, Kamada Michiru, Sachio Karino, Hironobu Narui, Nobukata Okano
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Patent number: 8138002Abstract: A convex part formation method of forming a convex part in parallel with a <110> direction of a backing on the backing having a {100} face as the top surface thereof, includes: (a) forming a mask layer in parallel with the <110> direction on the backing; (b) etch the backing so as to form a convex-part upper layer whose sectional shape on a cutting plane corresponding to a {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?U; and (c) further etching the backing so as to form a convex-part lower layer whose sectional shape on the cutting plane corresponding to the {110} face is an isosceles trapezoid, the base of which is longer than the upper side thereof, and the side surface of which has an inclination of ?D (where ?D??U).Type: GrantFiled: August 11, 2009Date of Patent: March 20, 2012Assignee: Sony CorporationInventors: Kiyotaka Yashima, Yoshinari Kiwaki, Kamada Michiru, Sachio Karino, Hironobu Narui, Nobukata Okano
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Publication number: 20120009711Abstract: A method of making a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a <110> direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the <110> direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.Type: ApplicationFiled: September 21, 2011Publication date: January 12, 2012Applicant: SONY CORPORATIONInventors: Sachio Karino, Eiji Takase, Makoto Oogane, Tsuyoshi Nagatake, Michiru Kamada, Hironobu Narui, Nobukata Okano
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Patent number: 8058660Abstract: Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a <110> direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the <110> direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.Type: GrantFiled: September 11, 2008Date of Patent: November 15, 2011Assignee: Sony CorporationInventors: Sachio Karino, Eiji Takase, Makoto Oogane, Tsuyoshi Nagatake, Michiru Kamada, Hironobu Narui, Nobukata Okano
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Publication number: 20110249975Abstract: An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.Type: ApplicationFiled: June 14, 2011Publication date: October 13, 2011Applicant: Sony CorporationInventors: Nobukata Okano, Yoshiaki Watanabe, Jugo Mitomo, Tomonori Hino, Hironobu Narui
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Patent number: 7915625Abstract: Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.Type: GrantFiled: September 11, 2008Date of Patent: March 29, 2011Assignee: Sony CorporationInventors: Sachio Karino, Eiji Takase, Makoto Oogane, Tsuyoshi Nagatake, Michiru Kamada, Hironobu Narui, Nobukata Okano
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Publication number: 20110068363Abstract: A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.Type: ApplicationFiled: December 1, 2010Publication date: March 24, 2011Applicant: SONY CORPORATIONInventors: Yoshiaki Watanabe, Tomonori Hino, Nobukata Okano, Hisayoshi Kuramochi, Yuichiro Kikuchi, Tatsuo Ohashi
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Patent number: 7858418Abstract: Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.Type: GrantFiled: October 17, 2007Date of Patent: December 28, 2010Assignee: Sony CorporationInventors: Yoshiaki Watanabe, Tomonori Hino, Nobukata Okano, Hisayoshi Kuramochi, Yuichiro Kikuchi, Tatsuo Ohashi