Patents by Inventor Nobukazu Teranishi

Nobukazu Teranishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240347569
    Abstract: Each pixel 8 constituting a solid-state imaging device 1 includes a light scattering unit 27 receiving incident light L1 and generating absorbed light L2 including scattered light, and a photoelectric conversion unit 26 receiving the absorbed light L2 from a light input surface 26a and generating a signal voltage corresponding to the received absorbed light L2. The light scattering unit 27 includes a plurality of metal structures 27a disposed with a predetermined cycle length. The light scattering unit 27 generates, as the scattered light, diffracted light caused by plasmons corresponding to the incident light L1.
    Type: Application
    Filed: January 17, 2022
    Publication date: October 17, 2024
    Inventors: Nobukazu TERANISHI, Atsushi ONO, Kazuma HASHIMOTO, Takahito YOSHINAGA
  • Patent number: 9787912
    Abstract: Read electrodes are provided to drain signal charge of pixels from photoelectric conversion units provided in the pixels separately to a vertical transfer unit. During a first exposure period during which an object is illuminated with infrared light, signal charge obtained from a first pixel, and signal charge obtained from a second pixel adjacent to the first pixel, are added together in the vertical transfer unit to produce first signal charge. During a second exposure period during which the object is not illuminated with infrared light, signal charge obtained from the first pixel, and signal charge obtained from the second pixel adjacent to the first pixel, are transferred without being added to the first signal charge in the vertical transfer unit, and are added together in another packet to produce second signal charge.
    Type: Grant
    Filed: December 9, 2014
    Date of Patent: October 10, 2017
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Takuya Asano, Tohru Yamada, Junichi Matsuo, Toshiya Fujii, Nobukazu Teranishi
  • Patent number: 9743026
    Abstract: A semiconductor photodetector has at least one unit pixel having a photoelectric conversion part, a charge storage part, and a detection circuit. The photoelectric conversion part includes a charge multiplication region in which incident light is converted into a charge, and the charge is multiplied by avalanche multiplication. The charge storage part is connected to the photoelectric conversion part and stores a signal charge from the photoelectric conversion part. The detection circuit is connected to the charge storage part, converts the signal charge stored in the charge storage part into a voltage, passes the voltage through an amplifier to amplify the voltage, and outputs the amplified voltage.
    Type: Grant
    Filed: June 15, 2015
    Date of Patent: August 22, 2017
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Manabu Usuda, Yutaka Hirose, Yoshihisa Kato, Nobukazu Teranishi
  • Publication number: 20150281620
    Abstract: A semiconductor photodetector has at least one unit pixel having a photoelectric conversion part, a charge storage part, and a detection circuit. The photoelectric conversion part includes a charge multiplication region in which incident light is converted into a charge, and the charge is multiplied by avalanche multiplication. The charge storage part is connected to the photoelectric conversion part and stores a signal charge from the photoelectric conversion part. The detection circuit is connected to the charge storage part, converts the signal charge stored in the charge storage part into a voltage, passes the voltage through an amplifier to amplify the voltage, and outputs the amplified voltage.
    Type: Application
    Filed: June 15, 2015
    Publication date: October 1, 2015
    Inventors: MANABU USUDA, YUTAKA HIROSE, YOSHIHISA KATO, NOBUKAZU TERANISHI
  • Publication number: 20150092019
    Abstract: Read electrodes are provided to drain signal charge of pixels from photoelectric conversion units provided in the pixels separately to a vertical transfer unit. During a first exposure period during which an object is illuminated with infrared light, signal charge obtained from a first pixel, and signal charge obtained from a second pixel adjacent to the first pixel, are added together in the vertical transfer unit to produce first signal charge. During a second exposure period during which the object is not illuminated with infrared light, signal charge obtained from the first pixel, and signal charge obtained from the second pixel adjacent to the first pixel, are transferred without being added to the first signal charge in the vertical transfer unit, and are added together in another packet to produce second signal charge.
    Type: Application
    Filed: December 9, 2014
    Publication date: April 2, 2015
    Inventors: Takuya ASANO, Tohru YAMADA, Junichi MATSUO, Toshiya FUJII, Nobukazu TERANISHI
  • Patent number: 8792037
    Abstract: A row scanning unit is configured to change a potential of a transfer signal from a second potential V2 to a third potential V3 prior to driving of a transfer operation for causing a transfer of signal charges from a photodiode to a floating diffusion, by supplying a transfer pulse having a first potential V1. The first potential V1 is a positive potential for turning a transfer transistor into ON state, the second potential V2 is a potential for causing pinning of holes under a gate of the transfer transistor and turning the transfer transistor into OFF state, and the third potential V3 is a potential for not causing the pinning of the holes under the gate of the transfer transistor and turning the transfer transistor into OFF state, the third potential being lower than the first potential and higher than the second potential.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: July 29, 2014
    Assignee: Panasonic Corporation
    Inventors: Hikaru Hasegawa, Yasuyuki Endoh, Nobukazu Teranishi
  • Publication number: 20120320245
    Abstract: A row scanning unit is configured to change a potential of a transfer signal from a second potential V2 to a third potential V3 prior to driving of a transfer operation for causing a transfer of signal charges from a photodiode to a floating diffusion, by supplying a transfer pulse having a first potential V1. The first potential V1 is a positive potential for turning a transfer transistor into ON state, the second potential V2 is a potential for causing pinning of holes under a gate of the transfer transistor and turning the transfer transistor into OFF state, and the third potential V3 is a potential for not causing the pinning of the holes under the gate of the transfer transistor and turning the transfer transistor into OFF state, the third potential being lower than the first potential and higher than the second potential.
    Type: Application
    Filed: August 21, 2012
    Publication date: December 20, 2012
    Applicant: PANASONIC CORPORATION
    Inventors: Hikaru Hasegawa, Yasuyuki Endoh, Nobukazu Teranishi
  • Patent number: 7919743
    Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
    Type: Grant
    Filed: April 6, 2009
    Date of Patent: April 5, 2011
    Assignee: Panasonic Corporation
    Inventors: Hiroshi Sakoh, Masato Kobayashi, Nobukazu Teranishi
  • Publication number: 20100033607
    Abstract: A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.
    Type: Application
    Filed: October 15, 2009
    Publication date: February 11, 2010
    Applicant: PANASONIC CORPORATION
    Inventors: Tomoko KOMATSU, Tomoki Masuda, Nobukazu Teranishi
  • Patent number: 7619678
    Abstract: A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.
    Type: Grant
    Filed: October 23, 2006
    Date of Patent: November 17, 2009
    Assignee: Panasonic Corporation
    Inventors: Tomoko Komatsu, Tomoki Masuda, Nobukazu Teranishi
  • Publication number: 20090197366
    Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
    Type: Application
    Filed: April 6, 2009
    Publication date: August 6, 2009
    Inventors: Hiroshi SAKOH, Masato KOBAYASHI, Nobukazu TERANISHI
  • Patent number: 7531782
    Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
    Type: Grant
    Filed: November 15, 2006
    Date of Patent: May 12, 2009
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiroshi Sakoh, Masato Kobayashi, Nobukazu Teranishi
  • Patent number: 7459665
    Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
    Type: Grant
    Filed: June 20, 2007
    Date of Patent: December 2, 2008
    Assignee: Panasonic Corporation
    Inventors: Hiroshi Sakoh, Masato Kobayashi, Nobukazu Teranishi
  • Patent number: 7456381
    Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: November 25, 2008
    Assignee: Panasonic Corporation
    Inventors: Hiroshi Sakoh, Masato Kobayashi, Nobukazu Teranishi
  • Patent number: 7417214
    Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: August 26, 2008
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiroshi Sakoh, Masato Kobayashi, Nobukazu Teranishi
  • Patent number: 7411180
    Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: August 12, 2008
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiroshi Sakoh, Masato Kobayashi, Nobukazu Teranishi
  • Publication number: 20080122964
    Abstract: A solid-state imaging device and a driving method thereof which are capable of reducing power consumption required for reading an image are provided. A horizontal transfer section 19 is constituted of a block A including a plurality of transfer electrodes 20a aligned in rows, and a block B including a plurality of transfer electrodes 20b aligned in columns. In the case where the horizontal transfer section 19 is a two-phase drive CCD, wirings 21a and 22a to supply driving pulses ?H1A and ?H2A are connected to the block A, and wirings 21b and 22b to supply driving pulses ?H1B and H2B are connected to the block B. While the solid-state imaging device 1 is being driven, after completion of transfer of electric charges from the block B to the block A, supply of the driving pulses ?H1B and ?H2B to the block B is stopped.
    Type: Application
    Filed: October 26, 2007
    Publication date: May 29, 2008
    Inventor: Nobukazu TERANISHI
  • Publication number: 20080036856
    Abstract: An imaging apparatus that can shoot a moving image and a still image includes: a CCD 1; an illumination light source 3 for illuminating a subject; and a controlling apparatus 10 for controlling the CCD 1 and the illumination light source 3.
    Type: Application
    Filed: June 14, 2007
    Publication date: February 14, 2008
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Tohru Yamada, Nobukazu Teranishi
  • Publication number: 20070246640
    Abstract: A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
    Type: Application
    Filed: June 20, 2007
    Publication date: October 25, 2007
    Inventors: Hiroshi Sakoh, Masato Kobayashi, Nobukazu Teranishi
  • Publication number: 20070200944
    Abstract: A light receiving region 21 and a floating diffusion region 22 are formed apart from each other in a semiconductor substrate 20 (S11), translucent adhesive 31 is applied to an area corresponding to the light receiving region 21 on the semiconductor substrate 20 (S22), and a translucent plate 30 is attached to the semiconductor substrate 20 on which the translucent adhesive 31 has been applied (S23). In this semiconductor manufacturing process, before the translucent adhesive 31 is applied, a dam member 24 is formed on the semiconductor substrate 20 so as to prevent the translucent adhesive 31 from flowing into an area corresponding to the floating diffusion region 22 on the semiconductor substrate 20 (S18).
    Type: Application
    Filed: October 27, 2006
    Publication date: August 30, 2007
    Inventors: Yasuo Takeuchi, Tomoko Komatsu, Nobukazu Teranishi, Tomoki Masuda, Yutaka Harada, Mituru Harada, Takashi Ohbayashi