Patents by Inventor Nobuo Matsuki
Nobuo Matsuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7655577Abstract: A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.Type: GrantFiled: October 19, 2006Date of Patent: February 2, 2010Assignee: ASM Japan K.K.Inventors: Yasuyoshi Hyodo, Nobuo Matsuki, Masashi Yamaguchi, Atsuki Fukazawa, Naoki Ohara, Yijun Liu
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Patent number: 7651959Abstract: A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at ?50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.Type: GrantFiled: December 3, 2007Date of Patent: January 26, 2010Assignee: ASM Japan K.K.Inventors: Atsuki Fukazawa, Jeongseok Ha, Nobuo Matsuki
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Patent number: 7638441Abstract: A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas. The liquid monomer is unsaturated and has no benzene structure.Type: GrantFiled: September 11, 2007Date of Patent: December 29, 2009Assignee: ASM Japan K.K.Inventors: Yoshinori Morisada, Nobuo Matsuki, Kamal Kishore Goundar
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Publication number: 20090298257Abstract: A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon, carbon, nitrogen, hydrogen, oxygen or any combination of two or more thereof; forming a thin insulative layer, by using the flowable, insulative material, in a trench located on a semiconductor substrate wherein the flowable, insulative material forms a conformal coating in a silicon and nitrogen rich condition whereas in a carbon rich condition, the flowable, insulative material vertically grows from the bottom of the trenches; and removing the residual carbon deposits from the flowable, insulative material by multi-step curing, such as O2 thermal annealing, ozone UV curing followed by N2 thermal annealing.Type: ApplicationFiled: May 30, 2008Publication date: December 3, 2009Applicant: ASM JAPAN K.K.Inventors: Woo Jin Lee, Atsuki Fukazawa, Nobuo Matsuki
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Patent number: 7622369Abstract: A method of forming device isolation regions on a trench-formed silicon substrate and removing residual carbon therefrom includes providing a flowable, insulative material constituted by silicon, carbon, nitrogen, hydrogen, oxygen or any combination of two or more thereof; forming a thin insulative layer, by using the flowable, insulative material, in a trench located on a semiconductor substrate wherein the flowable, insulative material forms a conformal coating in a silicon and nitrogen rich condition whereas in a carbon rich condition, the flowable, insulative material vertically grows from the bottom of the trenches; and removing the residual carbon deposits from the flowable, insulative material by multi-step curing, such as O2 thermal annealing, ozone UV curing followed by N2 thermal annealing.Type: GrantFiled: May 30, 2008Date of Patent: November 24, 2009Assignee: ASM Japan K.K.Inventors: Woo Jin Lee, Atsuki Fukazawa, Nobuo Matsuki
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Patent number: 7560144Abstract: A method of forming a film having a low dielectric constant, comprises the steps of: placing a substrate between an upper electrode and a lower electrode inside a reaction chamber, introducing a silicon-containing hydrocarbon compound source gas, an additive gas, and an inert gas into a space between the upper and lower electrodes by controlling a gas flow ratio, generating a plasma by applying RF power to the space between the upper and lower electrodes in a state in which an interval between the upper electrode and the substrate is narrower in the vicinity of a center of the substrate than that in the vicinity of its periphery, and forming a film having a low dielectric constant on the substrate at a deposition rate of less than approx. 790 nm/min by controlling a flow rate of the process gas.Type: GrantFiled: March 22, 2005Date of Patent: July 14, 2009Assignee: ASM Japan K.K.Inventors: Atsuki Fukazawa, Kiyoto Itoh, Tsunayuki Kimura, Nobuo Matsuki
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Publication number: 20090156017Abstract: A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.Type: ApplicationFiled: December 13, 2007Publication date: June 18, 2009Applicant: ASM JAPAN K.K.Inventors: Atsuki FUKAZAWA, Woo Jin LEE, Nobuo MATSUKI
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Publication number: 20090142935Abstract: A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at ?50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.Type: ApplicationFiled: December 3, 2007Publication date: June 4, 2009Applicant: ASM JAPAN K.K.Inventors: Atsuki FUKUZAWA, Jeongseok HA, Nobuo MATSUKI
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Patent number: 7504344Abstract: A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.Type: GrantFiled: June 30, 2005Date of Patent: March 17, 2009Assignee: ASM Japan K.K.Inventors: Nobuo Matsuki, Yoshinori Morisada, Seijiro Umemoto, Jea Sik Lee
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Publication number: 20090068852Abstract: A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas. The liquid monomer is unsaturated and has no benzene structure.Type: ApplicationFiled: September 11, 2007Publication date: March 12, 2009Applicant: ASM JAPAN K.K.Inventors: Yoshinori MORISADA, Nobuo MATSUKI, Kamal Kishore GOUNDAR
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Patent number: 7470633Abstract: A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.Type: GrantFiled: September 20, 2006Date of Patent: December 30, 2008Assignee: ASM Japan K.K.Inventors: Nobuo Matsuki, Yoshinori Morisada, Seijiro Umemoto, Jea Sik Lee
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Publication number: 20080305648Abstract: A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at ?50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.Type: ApplicationFiled: June 6, 2007Publication date: December 11, 2008Applicant: ASM JAPAN K.K.Inventors: Atsuki FUKAZAWA, Nobuo MATSUKI, Jeongseok HA
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Publication number: 20080299326Abstract: A plasma CVD apparatus includes: a cooling susceptor for placing a substrate thereon and serving as an electrode; and a shower plate for introducing gas toward the susceptor via multiple throughholes formed therein. The shower plate serves as an electrode and is disposed in parallel to the susceptor. The cooling susceptor is made of a ceramic material provided with a cooling fluid flow path for passing a cooling fluid therethrough.Type: ApplicationFiled: May 30, 2007Publication date: December 4, 2008Applicant: ASM JAPAN K.K.Inventors: Atsuki Fukazawa, Nobuo Matsuki, Lee Woo Jin, Mikio Shimizu
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Patent number: 7410915Abstract: A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.Type: GrantFiled: March 23, 2006Date of Patent: August 12, 2008Assignees: ASM Japan K.K., Samsung Electronic Co., Ltd.Inventors: Yoshinori Morisada, Kamal Kishore Goundar, Masashi Yamaguchi, Nobuo Matsuki, Kyu Tae Na, Eun Kyung Baek
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Patent number: 7354873Abstract: A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.Type: GrantFiled: August 18, 2006Date of Patent: April 8, 2008Assignee: ASM Japan K.K.Inventors: Atsuki Fukazawa, Nobuo Matsuki, Seijiro Umemoto
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Publication number: 20080076266Abstract: A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: introducing into a reaction chamber a source gas of a silicon-containing hydrocarbon compound comprising in its molecule at least one Si—O bond and at least one bond selected from the group consisting of a Si—Si bond, Si—N bond, and Si—H bond; introducing into the reaction chamber an additive gas constituted by C, H, and optionally O; controlling a susceptor at a temperature of ?50° C. to 50° C.; forming by plasma reaction an insulation film constituted by Si, O, H, and optionally N on an irregular surface of a substrate at a deposition rate of 100 nm/min or less; and heat-treating the substrate with the insulation film, thereby increasing a density of the insulation film to more than 2.1 g/cm3 as a result of the heat treatment.Type: ApplicationFiled: September 21, 2006Publication date: March 27, 2008Applicant: ASM JAPAN K.K.Inventors: Atsuki Fukazawa, Nobuo Matsuki
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Publication number: 20080038485Abstract: A method for forming a silicon carbide film containing Si, C, O, H, and optionally N on a substrate placed in a reaction space, includes the steps of: introducing into the reaction space a precursor containing Si, C, O, and H and having at least one Si—O bond in its molecule; introducing into the reaction space an inert gas; applying RF power in the reaction space, wherein a ratio of a flow rate (sccm) of the inert gas to the RF power (W/cm2) is controlled at 30-850; and thereby depositing on the substrate a silicon carbide film containing Si, C, O, H, and optionally N.Type: ApplicationFiled: August 8, 2006Publication date: February 14, 2008Applicant: ASM JAPAN K.K.Inventors: Atsuki FUKAZAWA, Manabu KATO, Nobuo MATSUKI
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Publication number: 20070224833Abstract: A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C. which is not substituted by a vinyl group or an acetylene group; introducing the vaporized gas and CO2 gas or H2 gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas, thereby reducing extinction coefficient (k) at 193 nm and increasing mechanical hardness.Type: ApplicationFiled: March 23, 2006Publication date: September 27, 2007Applicants: ASM JAPAN K.K., SAMSUNG ELECTRONICS CO., LTD.Inventors: Yoshinori Morisada, Kamal Goundar, Masashi Yamaguchi, Nobuo Matsuki, Kyu Na, Eun Baek
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Publication number: 20070218705Abstract: A method forms a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (C?H?X?, wherein ? and ? are natural numbers of 5 or more; ? is an integer including zero; X is O, N or F) having a boiling point of about 20° C. to about 350° C.; introducing the vaporized gas into a CVD reaction chamber inside which a substrate is placed; and forming a hydrocarbon-containing polymer film on the substrate by plasma polymerization of the gas.Type: ApplicationFiled: September 20, 2006Publication date: September 20, 2007Applicant: ASM JAPAN K.K.Inventors: Nobuo Matsuki, Yoshinori Morisada, Seijiro Umemoto, Jea Lee
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Publication number: 20070111540Abstract: A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.Type: ApplicationFiled: October 19, 2006Publication date: May 17, 2007Applicant: ASM JAPAN K.K.Inventors: Yasuyoshi HYODO, Nobuo MATSUKI, Masashi YAMAGUCHI, Atsuki FUKAZAWA, Naoki OHARA, Yijun LIU