Patents by Inventor Nobuo Matsuki

Nobuo Matsuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6759344
    Abstract: An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas; and (iii) forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas. The plasma treatment may be plasma CVD processing.
    Type: Grant
    Filed: December 3, 2002
    Date of Patent: July 6, 2004
    Assignee: ASM Japan K.K.
    Inventors: Nobuo Matsuki, Yoshinori Morisada, Atsuki Fukazawa, Manabu Kato
  • Patent number: 6740367
    Abstract: A plasma CVD film-forming device forms a film on a semiconductor substrate in such as way that the film quality and film thickness of a thin film becomes uniform. The plasma CVD film-forming device to form a thin film on a semiconductor substrate includes a vacuum chamber, a showerhead positioned within the vacuum chamber, and a susceptor positioned substantially in parallel to and facing the showerhead within the vacuum chamber and on which susceptor the object to be processed is loaded and the central part of the showerhead and/or the susceptor constitutes a concave surface electrode.
    Type: Grant
    Filed: December 23, 2002
    Date of Patent: May 25, 2004
    Assignee: ASM Japan K.K.
    Inventors: Nobuo Matsuki, Yoshinori Morisada
  • Patent number: 6737366
    Abstract: A thin film having a low dielectric constant is formed on a semiconductor substrate by plasma reaction using a method including the steps of: (i) introducing a reaction gas into a reaction chamber for plasma CVD processing wherein a semiconductor substrate is placed on a lower stage; and (ii) forming a thin film on the substrate by plasma reaction while reducing or discharging an electric charge from the substrate surface. The discharging can be conducted by forming in the reaction chamber a upper region for plasma excitation and a lower region for film formation on the substrate wherein substantially no electric potential is applied in the lower region to suppress plasma excitation. An intermediate electrode is used to divide the interior of the reaction chamber into the upper region and the lower region. The discharge can also be conducted by lowering the temperature of the lower stage to condense moisture molecules on the substrate surface.
    Type: Grant
    Filed: December 20, 2002
    Date of Patent: May 18, 2004
    Assignee: ASM Japan K.K.
    Inventor: Nobuo Matsuki
  • Publication number: 20040038514
    Abstract: A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.
    Type: Application
    Filed: April 11, 2003
    Publication date: February 26, 2004
    Applicant: ASM JAPAN K.K.
    Inventors: Yasuyoshi Hyodo, Atsuki Fukazawa, Yoshinori Morisada, Masashi Yamaguchi, Nobuo Matsuki
  • Publication number: 20030224622
    Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus, and depositing a siloxan polymer film by plasma polymerization at a temperature of -50° C.-100° C. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant such as 2.5.
    Type: Application
    Filed: March 27, 2003
    Publication date: December 4, 2003
    Applicant: ASM JAPAN K.K.
    Inventors: Nobuo Matsuki, Yoshinori Morisada, Yasuyoshi Hyodo, Seijiro Umemoto
  • Patent number: 6653719
    Abstract: A siloxan polymer insulation film has a dielectric constant of 3.3 or lower and has —SiR2O— repeating structural units. The siloxan polymer has dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound expressed by the general formula Si&agr;O&bgr;CxHy (&agr;, &bgr;, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.
    Type: Grant
    Filed: September 24, 2002
    Date of Patent: November 25, 2003
    Assignee: ASM Japan K.K.
    Inventor: Nobuo Matsuki
  • Patent number: 6631692
    Abstract: A plasma CVD film-forming device forms a film on a semiconductor substrate in such as way that the film quality and film thickness of a thin film becomes uniform. The plasma CVD film-forming device to form a thin film on a semiconductor substrate includes a vacuum chamber, a showerhead positioned within the vacuum chamber, and a susceptor positioned substantially in parallel to and facing the showerhead within the vacuum chamber and on which susceptor the object to be processed is loaded and the central part of the showerhead and/or the susceptor constitutes a concave surface electrode.
    Type: Grant
    Filed: March 17, 2000
    Date of Patent: October 14, 2003
    Assignee: ASM Japan K.K.
    Inventors: Nobuo Matsuki, Yoshinori Morisada
  • Publication number: 20030162408
    Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The silicon-containing hydrocarbon compound includes a cyclosiloxan compound or a linear siloxan compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a. low dielectric constant.
    Type: Application
    Filed: December 11, 2002
    Publication date: August 28, 2003
    Applicant: ASM JAPAN K.K.
    Inventors: Nobuo Matsuki, Yasuyoshi Hyodo, Masashi Yamaguchi, Yoshinori Morisada, Atsuki Fukazawa, Manabu Kato, Shinya Kaneko, Devendra Kumar, Seijiro Umemoto
  • Publication number: 20030154921
    Abstract: A CVD apparatus includes (i) a reaction chamber; (ii) a reaction gas inlet; (iii) a lower stage on which a semiconductor substrate is placed; (iv) an upper electrode for plasma excitation; (v) an intermediate electrode with plural pores through which the reaction gas passes, wherein a reaction space is formed between the upper electrode and the intermediate electrode; and (vi) a cooling plate disposed between the intermediate electrode and the lower stage, wherein a transition space is formed between the intermediate electrode and the cooling plate, and a plasma-free space is formed between the cooling plate and the lower stage.
    Type: Application
    Filed: October 24, 2002
    Publication date: August 21, 2003
    Inventors: Nobuo Matsuki, Seijiro Umemoto, Yasuyoshi Hyodo
  • Patent number: 6602800
    Abstract: A plasma CVD apparatus for forming a thin film on a semiconductor substrate by plasma reaction includes: (i) a reaction chamber; (ii) a reaction gas inlet for introducing a reaction gas into the reaction chamber; (iii) a lower stage on which a semiconductor substrate is placed in the reaction chamber; (iv) an upper electrode for plasma excitation in the reaction chamber; and (v) an electrically conductive intermediate plate with plural pores disposed between the upper electrode and the lower stage. The intermediate plate divides the interior of the reaction chamber into an upper region and a lower region, wherein the lower region has no significant presence of plasma.
    Type: Grant
    Filed: May 9, 2001
    Date of Patent: August 5, 2003
    Assignee: ASM Japan K.K.
    Inventor: Nobuo Matsuki
  • Publication number: 20030143867
    Abstract: An insulation film is formed on a semiconductor substrate by a method including the steps of: (i) introducing a source gas comprising a compound composed of at least Si, C, and H into a chamber; (ii) introducing in pulses an oxidizing gas into the chamber, wherein the source gas and the oxidizing gas form a reaction gas; and (iii) forming an insulation film on a semiconductor substrate by plasma treatment of the reaction gas. The plasma treatment may be plasma CVD processing.
    Type: Application
    Filed: December 3, 2002
    Publication date: July 31, 2003
    Applicant: ASM JAPAN K.K.
    Inventors: Nobuo Matsuki, Yoshinori Morisada, Atsuki Fukazawa, Manabu Kato
  • Publication number: 20030124874
    Abstract: A thin film having a low dielectric constant is formed on a semiconductor substrate by plasma reaction using a method including the steps of: (i) introducing a reaction gas into a reaction chamber for plasma CVD processing wherein a semiconductor substrate is placed on a lower stage; and (ii) forming a thin film on the substrate by plasma reaction while reducing or discharging an electric charge from the substrate surface. The discharging can be conducted by forming in the reaction chamber a upper region for plasma excitation and a lower region for film formation on the substrate wherein substantially no electric potential is applied in the lower region to suppress plasma excitation. An intermediate electrode is used to divide the interior of the reaction chamber into the upper region and the lower region. The discharge can also be conducted by lowering the temperature of the lower stage to condense moisture molecules on the substrate surface.
    Type: Application
    Filed: December 20, 2002
    Publication date: July 3, 2003
    Inventor: Nobuo Matsuki
  • Publication number: 20030119336
    Abstract: An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.
    Type: Application
    Filed: November 5, 2002
    Publication date: June 26, 2003
    Inventors: Nobuo Matsuki, Yasuyoshi Hyodo, Masashi Yamaguchi, Yoshinori Morisada, Atsuki Fukazawa, Manabu Kato
  • Publication number: 20030089314
    Abstract: A plasma CVD film-forming device forms a film on a semiconductor substrate in such as way that the film quality and film thickness of a thin film becomes uniform. The plasma CVD film-forming device to form a thin film on a semiconductor substrate includes a vacuum chamber, a showerhead positioned within the vacuum chamber, and a susceptor positioned substantially in parallel to and facing the showerhead within the vacuum chamber and on which susceptor the object to be processed is loaded and the central part of the showerhead and/or the susceptor constitutes a concave surface electrode.
    Type: Application
    Filed: December 23, 2002
    Publication date: May 15, 2003
    Inventors: Nobuo Matsuki, Yoshinori Morisada
  • Patent number: 6559520
    Abstract: A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si&agr;O&agr;−1R2&agr;−&bgr;+2(OCnH2n+1)&bgr; wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.
    Type: Grant
    Filed: April 25, 2002
    Date of Patent: May 6, 2003
    Assignee: ASM Japan K.K.
    Inventors: Nobuo Matsuki, Lee Jea Sik, Yoshinori Morisada, Satoshi Takahashi
  • Patent number: 6537928
    Abstract: A CVD apparatus includes (i) a reaction chamber; (ii) a reaction gas inlet; (iii) a lower stage on which a semiconductor substrate is placed; (iv) an upper electrode for plasma excitation; (v) an intermediate electrode with plural pores through which the reaction gas passes, wherein a reaction space is formed between the upper electrode and the intermediate electrode; and (vi) a cooling plate disposed between the intermediate electrode and the lower stage, wherein a transition space is formed between the intermediate electrode and the cooling plate, and a plasma-free space is formed between the cooling plate and the lower stage.
    Type: Grant
    Filed: February 19, 2002
    Date of Patent: March 25, 2003
    Assignee: ASM Japan K.K.
    Inventors: Nobuo Matsuki, Seijiro Umemoto, Yasuyoshi Hyodo
  • Publication number: 20030054666
    Abstract: A siloxan polymer insulation film has a dielectric constant of 3.3 or lower and has —SiR2O— repeating structural units. The siloxan polymer has dielectric constant, high thermal stability and high humidity-resistance on a semiconductor substrate. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound expressed by the general formula Si&agr;O&bgr;CxHy (&agr;, &bgr;, x, and y are integers) and then introducing the vaporized compound to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.
    Type: Application
    Filed: September 24, 2002
    Publication date: March 20, 2003
    Applicant: ASM JAPAN K.K.
    Inventor: Nobuo Matsuki
  • Patent number: 6514880
    Abstract: A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si&agr;O&agr;−1R2&agr;−&bgr;+2(OCnH2n+1)&bgr; wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.
    Type: Grant
    Filed: April 6, 2001
    Date of Patent: February 4, 2003
    Assignee: ASM Japan K.K.
    Inventors: Nobuo Matsuki, Lee Jea Sik, Yoshinori Morisada, Satoshi Takahashi
  • Publication number: 20020168870
    Abstract: A thin film having a low dielectric constant is formed on a semiconductor substrate by plasma reaction using a method including the steps of: (i) introducing a reaction gas into a reaction chamber for plasma CVD processing wherein a semiconductor substrate is placed on a lower stage; and (ii) forming a thin film on the substrate by plasma reaction while reducing or discharging an electric charge from the substrate surface. The discharging can be conducted by forming in the reaction chamber a upper region for plasma excitation and a lower region for film formation on the substrate wherein substantially no electric potential is applied in the lower region to suppress plasma excitation. An intermediate electrode is used to divide the interior of the reaction chamber into the upper region and the lower region. The discharge can also be conducted by lowering the temperature of the lower stage to condense moisture molecules on the substrate surface.
    Type: Application
    Filed: May 9, 2001
    Publication date: November 14, 2002
    Inventor: Nobuo Matsuki
  • Publication number: 20020160626
    Abstract: A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has —SiR2O— repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula Si&agr;O&agr;−1R2&agr;−&bgr;+2(OCnH2n+1)&bgr; wherein &agr; is an integer of 1-3, &bgr; is 2, n is an integer of 1-3, and R is C1-6 hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.
    Type: Application
    Filed: April 25, 2002
    Publication date: October 31, 2002
    Applicant: ASM JAPAN K.K.
    Inventors: Nobuo Matsuki, Lee Jea Sik, Yoshinori Morisada, Satoshi Takahashi