Patents by Inventor Nobuo Miyamoto

Nobuo Miyamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10921490
    Abstract: Provided are an active energy ray-curable composition which has a low viscosity suitable for coating and also exhibits a high refractive index in terms of a cured product thereof, a cured product thereof, and a plastic lens. The active energy ray-curable composition contains a phenylbenzyl (meth)acrylate (A) and a bicarbazole compound (B) represented by the following structural formula (1) (in the formula, X1 and X2 each independently represent a photopolymerizable functional group, a structural moiety having a photopolymerizable functional group, or a hydrogen atom, provided that at least one of X1 and X2 represents a photopolymerizable functional group or a structural moiety having a photopolymerizable functional group; and R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a bromine atom, or a chlorine atom).
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: February 16, 2021
    Assignee: DIC Corporation
    Inventors: Yasuko Odani, Masanori Miyamoto, Nobuo Kobayashi, Changjun Deng, Xia Yang
  • Publication number: 20200161445
    Abstract: An n-type epitaxial layer is formed on an n-type semiconductor substrate made of silicon carbide. p-type body regions are formed in the epitaxial layer, and n-type source region is formed in the body region. On the body region between the source region and the epitaxial layer, a gate electrode is formed via a gate dielectric film, and an interlayer insulating film having an opening is formed so as to cover the gate electrode. A source electrode electrically connected to the source region and the body regions is formed in the opening. A recombination layer is formed between the body region and a basal plane dislocation is a layer having point defect density higher than that of the epitaxial layer located directly under the recombination layer or having a metal added to the epitaxial layer.
    Type: Application
    Filed: October 9, 2019
    Publication date: May 21, 2020
    Inventors: Hironobu MIYAMOTO, Yasuhiro OKAMOTO, Kenichi HISADA, Koichi ARAI, Nobuo MACHIDA
  • Patent number: 10576382
    Abstract: A non-limiting example game apparatus includes a first LCD and a second LCD, a touch panel is provided on the second LCD. A pre-hitting operation screen is displayed on the second LCD, and a mark for designating a target landing point is displayed in this screen. A player designates a desired target landing point by moving the mark by a touch operation. A target shot power value for causing a ball to arrive the designated target landing point is calculated with using parameters set for a club that is currently selected. However, when the designated target landing point exceeds a position that the ball is hit using the club under selection with a maximum power value, the mark is moved to the position concerned and the maximum power value is set as a target shot power value.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: March 3, 2020
    Assignee: NINTENDO CO., LTD.
    Inventors: Yoshiaki Onishi, Nobuo Matsumiya, Shunsuke Matsushita, Hiroshi Miyamoto, Nobuya Ohashi, Kazuhisa Watanabe, Yuichi Mizobe
  • Patent number: 10527755
    Abstract: Provided are an active energy ray-curable composition which has a viscosity suitable for coating and also has a super high refractive index at a level higher than ever, a cured product thereof, and a plastic lens. The active energy ray-curable composition contains zirconium oxide nanoparticles (A) and a bicarbazole compound (B) represented by the following structural formula (1) (in the formula, X1 and X2 each independently represent a photopolymerizable functional group, a structural moiety having a photopolymerizable functional group, or a hydrogen atom, provided that at least one of X1 and X2 represents a photopolymerizable functional group or a structural moiety having a photopolymerizable functional group; and R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a bromine atom, or a chlorine atom).
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: January 7, 2020
    Assignee: DIC Corporation
    Inventors: Yasuko Odani, Masanori Miyamoto, Nobuo Kobayashi, Naohiro Takeshita, Ena Takeshita, Changjun Deng, Xia Yang
  • Publication number: 20190338374
    Abstract: To identify a microorganism causing the development of primary sclerosing cholangitis associated with ulcerative colitis. A Klebsiella pneumoniae strain inducing inflammation in the liver.
    Type: Application
    Filed: April 19, 2019
    Publication date: November 7, 2019
    Applicant: KEIO UNIVERSITY
    Inventors: Nobuhiro Nakamoto, Nobuo Sasaki, Ryo Aoki, Kentaro Miyamoto, Toshiro Sato, Takanori Kanai
  • Publication number: 20190237577
    Abstract: A drift layer is formed over a semiconductor substrate which is an SiC substrate. The drift layer includes first to third n-type semiconductor layers and a p-type impurity region. Herein, an impurity concentration of the second n-type semiconductor layer is higher than an impurity concentration of the first n-type semiconductor layer and an impurity concentration of the third n-type semiconductor layer. Also, in plan view, the second semiconductor layer located between the p-type impurity regions adjacent to each other overlaps with at least a part of a gate electrode formed in a trench.
    Type: Application
    Filed: December 18, 2018
    Publication date: August 1, 2019
    Inventors: Yasuhiro OKAMOTO, Nobuo MACHIDA, Koichi ARAI, Kenichi HISADA, Yasunori YAMASHITA, Satoshi EGUCHI, Hironobu MIYAMOTO, Atsushi SAKAI, Katsumi EIKYU
  • Patent number: 10336696
    Abstract: A photopolymerizable material contains, as a main polymerization component, a bicarbazole compound represented by structural formula (1). In structural formula (1), X1 and X2 are each independently a photopolymerizable functional group, a structural site having a photopolymerizable functional group, or a hydrogen atom, at least one of X1 and X2 is a photopolymerizable functional group or a structural site having a photopolymerizable functional group, R1 and R2 are each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a bromine atom, or a chlorine atom, and at least one of R1 and R2 is a hydrogen atom.
    Type: Grant
    Filed: April 30, 2014
    Date of Patent: July 2, 2019
    Assignee: DIC Corporation
    Inventors: Changjun Deng, Masanori Miyamoto, Nobuo Kobayashi, Xia Yang
  • Publication number: 20190080879
    Abstract: A charged-particle beam apparatus is provided with a cathode to emit charged particle beams, an anode to propagate the charged particle beams emitted from the cathode in a sample surface direction, an aperture to propagate a charged particle beam passing through an opening at a predetermined position and of a predetermined shape, among the charged particle beams passing through the anode, in the sample surface direction, and a first electrode that is disposed between the anode and the aperture, and is set at a first electric potential of a polarity repelling a polarity of an ion generated due to collision of a charged particle beam.
    Type: Application
    Filed: September 10, 2018
    Publication date: March 14, 2019
    Applicant: NUFLARE TECHNOLOGY, INC.
    Inventors: Nobuo MIYAMOTO, Munehiro OGASAWARA
  • Patent number: 10134559
    Abstract: In one embodiment, a method of cleaning an electron source included in an electron gun for an electron beam writing apparatus includes supplying an inert gas to an electron gun chamber, allowing the electron source to emit electrons, ionizing the inert gas with the electrons to produce ions, and removing contaminants deposited on the electron source by bombardment with the ions, and cutting off the supply of the inert gas based on a change in electron beam emission characteristic of the electron gun.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: November 20, 2018
    Assignee: NuFlare Technology, Inc.
    Inventor: Nobuo Miyamoto
  • Patent number: 9601298
    Abstract: An electron gun supporting member includes an insulating supporting member configured such that its one end is connected to a predetermined member having a ground potential and other end is connected to a high-voltage electrode to which a high potential being a negative high potential for emitting electrons from an electron source is applied, so as to support the high-voltage electrode, and a metal film formed in a partial region, which contacts neither the high-voltage electrode nor the predetermined member, on the outer surface of the insulating supporting member.
    Type: Grant
    Filed: August 24, 2015
    Date of Patent: March 21, 2017
    Assignee: NuFlare Technology, Inc.
    Inventor: Nobuo Miyamoto
  • Publication number: 20170032926
    Abstract: In one embodiment, a method of cleaning an electron source included in an electron gun for an electron beam writing apparatus includes supplying an inert gas to an electron gun chamber, allowing the electron source to emit electrons, ionizing the inert gas with the electrons to produce ions, and removing contaminants deposited on the electron source by bombardment with the ions, and cutting off the supply of the inert gas based on a change in electron beam emission characteristic of the electron gun.
    Type: Application
    Filed: July 15, 2016
    Publication date: February 2, 2017
    Applicant: NuFlare Technology, Inc.
    Inventor: Nobuo MIYAMOTO
  • Publication number: 20160064174
    Abstract: An electron gun supporting member includes an insulating supporting member configured such that its one end is connected to a predetermined member having a ground potential and other end is connected to a high-voltage electrode to which a high potential being a negative high potential for emitting electrons from an electron source is applied, so as to support the high-voltage electrode, and a metal film formed in a partial region, which contacts neither the high-voltage electrode nor the predetermined member, on the outer surface of the insulating supporting member.
    Type: Application
    Filed: August 24, 2015
    Publication date: March 3, 2016
    Applicant: NuFlare Technology, Inc.
    Inventor: Nobuo MIYAMOTO
  • Patent number: 9082586
    Abstract: A cathode operating temperature adjusting method includes acquiring an approximate equation approximating a correlation between an emission current value in an electron beam source using a cathode and an operating temperature of the cathode at which a bias voltage becomes saturated at the emission current, measuring a current density of an electron beam from the cathode when in the state where an n-th emission current value and an n-th cathode operating temperature are set in the electron beam source, determining whether the measured current density is within a first tolerance range, changing the n-th emission current value to an (n+1)th emission current value when the measured current density is not within the first tolerance range, calculating an operating temperature of the cathode corresponding to the (n+1)th emission current value by the approximate equation, and setting the calculated operating temperature, as an (n+1)th cathode operating temperature, in the electron beam source.
    Type: Grant
    Filed: February 21, 2014
    Date of Patent: July 14, 2015
    Assignee: NuFlare Technology, Inc.
    Inventor: Nobuo Miyamoto
  • Publication number: 20140239200
    Abstract: A cathode operating temperature adjusting method includes acquiring an approximate equation approximating a correlation between an emission current value in an electron beam source using a cathode and an operating temperature of the cathode at which a bias voltage becomes saturated at the emission current, measuring a current density of an electron beam from the cathode when in the state where an n-th emission current value and an n-th cathode operating temperature are set in the electron beam source, determining whether the measured current density is within a first tolerance range, changing the n-th emission current value to an (n+1)th emission current value when the measured current density is not within the first tolerance range, calculating an operating temperature of the cathode corresponding to the (n+1)th emission current value by the approximate equation, and setting the calculated operating temperature, as an (n+1)th cathode operating temperature, in the electron beam source.
    Type: Application
    Filed: February 21, 2014
    Publication date: August 28, 2014
    Applicant: NuFlare Technology, Inc.
    Inventor: Nobuo MIYAMOTO
  • Patent number: 7683551
    Abstract: Discharge factors existing on a surface of an electrode or an insulator forming an electron gun are removed efficiently and effectively, thus simply and easily enhancing the withstand voltage property of the electron gun. A conditioning processing device of an electron gun is provided with a voltage supply section, a voltage adjusting section for adjusting the output voltage of the voltage supply section, and a current detection section for detecting a leakage current flowing between the electrodes of the electron gun. Further, there are attached a vacuum exhaust section for adjusting the inside of the electron gun in a reduced pressure condition and a pressure detection section.
    Type: Grant
    Filed: September 24, 2007
    Date of Patent: March 23, 2010
    Assignee: NuFlare Technology, Inc.
    Inventor: Nobuo Miyamoto
  • Publication number: 20080153376
    Abstract: Discharge factors existing on a surface of an electrode or an insulator forming an electron gun are removed efficiently and effectively, thus simply and easily enhancing the withstand voltage property of the electron gun. A conditioning processing device of an electron gun is provided with a voltage supply section, a voltage adjusting section for adjusting the output voltage of the voltage supply section, and a current detection section for detecting a leakage current flowing between the electrodes of the electron gun. Further, there are attached a vacuum exhaust section for adjusting the inside of the electron gun in a reduced pressure condition and a pressure detection section.
    Type: Application
    Filed: September 24, 2007
    Publication date: June 26, 2008
    Applicant: NuFlare Technology, Inc.
    Inventor: Nobuo MIYAMOTO
  • Patent number: 6508990
    Abstract: A substrate treating method and apparatus which can perform in-situ monitoring of surface state of a semiconductor substrate. The substrate treating apparatus comprises substrate treating means for subjecting the substrate to a required treatment, means for condensing infrared radiation emitted by an infrared radiation source onto an outer peripheral part of the substrate and introducing the infrared radiation into the substrate, means for detecting the infrared radiation which has undergone multiple reflection inside the substrate and exited from the substrate, means for analyzing the detected infrared radiation, means for monitoring the surface state of the substrate, and control means for controlling the substrate treating means, based on the monitored surface state of the substrate.
    Type: Grant
    Filed: July 15, 1999
    Date of Patent: January 21, 2003
    Assignees: Advantest Corp.
    Inventors: Haruo Yoshida, Michiaki Endo, Michio Niwano, Nobuo Miyamoto, Yasuhiro Maeda
  • Patent number: 6476393
    Abstract: A surface state monitoring method and apparatus for performing in-situ monitoring of surface states of semiconductor substrates. The apparatus comprises condensing means 30 for condensing infrared radiation to an outer peripheral part of the substrate-to-be-monitored; control means 80 for controlling an incident angle of the infrared radiation condensed by the condensing means 30; condensing means 40 for condensing the infrared radiation which has undergone multiple reflection in the substrate-to-be-monitored; detecting means 50 for detecting the infrared radiation condensed by the infrared radiation condensing means 40, and analyzing means 60 for analyzing the detected infrared radiation detected and measuring contaminants staying on the surfaces of the substrate-to-be-monitored.
    Type: Grant
    Filed: May 27, 1999
    Date of Patent: November 5, 2002
    Assignees: Advantest. Corp
    Inventors: Haruo Yoshida, Michiaki Endo, Michio Niwano, Nobuo Miyamoto, Yasuhiro Maeda
  • Patent number: 6005660
    Abstract: A foreign matter processing apparatus is disclosed for detecting a foreign matter sticking to the surface of a sample such as a circuit board. In the sample processing apparatus of the present invention, a fine foreign matter sticking to a surface of a sample is detected, and the composition of the detected foreign matter is analyzed. Then, it is determined based on a result of the analysis and various data registered in advance whether or not it is required to remove the foreign matter, and the foreign matter, whose removal has been determined to be required, is removed from the surface of the sample. Accordingly, detection, analysis and removal of a foreign matter on the surface of a sample can be performed by a single apparatus.
    Type: Grant
    Filed: May 27, 1998
    Date of Patent: December 21, 1999
    Assignee: Advantest Corporation
    Inventors: Haruo Yoshida, Nobuo Miyamoto
  • Patent number: 5793638
    Abstract: An object of this invention is to provide efficient operations of a production line for producing finished products by performing working in which a variety of parts are selectively combined with one another during a plurality of processes. A semi-finished product produced in processes (1 and 2) is assigned to an article number; parts serving as raw materials, a supplier of the semi-finished product, or a destination of the semi-finished product or part are specified; and these specified data are distributed and transmitted from a higher level system (4) to respective control systems (5, 6, 7 and 8) as planned data to be executed and planned data to be received.
    Type: Grant
    Filed: March 18, 1996
    Date of Patent: August 11, 1998
    Assignee: Kabushiki Kaisha Komatsu Seisakusho
    Inventors: Yoshihiro Yao, Nobuo Miyamoto, Hideyuki Wakai